Abstract: A display panel can include a substrate, a light-emitting element including an emission region on the substrate, a reference voltage line adjacent to the light-emitting element, and a branch line connected to the reference voltage line to apply a reference voltage to light-emitting element. The light-emitting element can emit light on the emission region in a direction of the substrate. Further, the branch line can include a semiconductor layer, and the semiconductor layer of the branch line can overlap the emission region.

Abstract: A wafer-level assembly method for a micro hemispherical resonator gyroscope includes: after independently manufactured glass substrates are softened and deformed at a high temperature, forming a micro hemispherical resonator on the glass substrate; forming glass substrate alignment holes at both ends of the glass substrate by laser ablation; aligning and fixing a plurality of identical micro hemispherical resonators on a wafer fixture by using the alignment holes as a reference, and then performing operations by using the wafer fixture as a unit to implement subsequent processes that include: releasing the micro hemispherical resonators, metallizing the surface, fixing to the planar electrode substrates, separating the wafer fixture and cleaning to obtain a micro hemispherical resonator gyroscope driven by a bottom planar electrode substrate.

Abstract: A method includes placing a plurality of package components over a carrier, encapsulating the plurality of package components in an encapsulant, forming a light-sensitive dielectric layer over the plurality of package components and the encapsulant, exposing the light-sensitive dielectric layer using a lithography mask, and developing the light-sensitive dielectric layer to form a plurality of openings. Conductive features of the plurality of package components are exposed through the plurality of openings. The method further includes forming redistribution lines extending into the openings. One of the redistribution lines has a length greater than about 26 mm. The redistribution lines, the plurality of package components, the encapsulant in combination form a reconstructed wafer.

Abstract: An object is to provide a technique capable of suppressing the rise in the sense voltage during the Miller plateau. A semiconductor device includes a semiconductor substrate of first conductivity type, a first IGBT portion and a second IGBT portion selectively disposed on a first main surface of the semiconductor substrate, and an impurity region of second conductivity type selectively disposed on a second main surface of the semiconductor substrate. The second IGBT portion is used to detect the current passing through the first IGBT portion. An area ratio of the impurity region within a second range to an area of the second range is lower than an area ratio of the impurity region within a first range to an area of the first range, the second range corresponding to the second IGBT portion, the first range corresponding to the first IGBT portion.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A display panel including a corner includes: a substrate including a display area including a front display area, and a peripheral area outside the display area; an insulating layer on the substrate in the display area and the peripheral area, where an outer groove or an outer through hole is defined in the insulating layer in the peripheral area; an upper inorganic pattern layer on the insulating layer, where the upper inorganic pattern layer includes a protruding tip protruding toward a center of the outer groove or a center of the outer through hole; and a front display element on the insulating layer and overlapping the front display area. The upper inorganic pattern layer is apart from the front display element.

Abstract: A spherical flip-chip micro-LED, a method for manufacturing the spherical flip-chip micro-LED, and a display panel are provided. The spherical flip-chip micro-LED includes a light-emitting body, a supporting body, a first electrode, a second electrode, and an insulating protective layer. The supporting body is transparent. The first electrode and the second electrode are electrically coupled with the light-emitting body. The insulating protective layer covers the light-emitting body. The light-emitting body, the supporting body, and the insulating protective layer form a spherical structure.

Abstract: A method of forming a semiconductor arrangement includes forming a gate dielectric layer over a semiconductor layer. A gate electrode layer is formed over the gate dielectric layer. A first gate mask is formed over the gate electrode layer. The gate electrode layer is etched using the first gate mask as an etch template to form a first gate electrode. A first dopant is implanted into the semiconductor layer using the first gate mask and the first gate electrode as an implantation template to form a first doped region in the semiconductor layer.

Abstract: Provided are a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes a flexible substrate, a driving structure layer disposed on the flexible substrate, a light-emitting element disposed on the driving structure layer, and an encapsulation layer disposed on the light-emitting element. The flexible substrate includes a first flexible substrate layer, a first connection layer disposed on the first flexible substrate layer, and a second flexible substrate layer disposed on the first connection layer, wherein, the first connection layer includes at least one first via, and the first flexible substrate layer includes at least one first groove provided corresponding to the first via; the first via and the first groove are mutually communicated, and an orthographic projection of the first groove on the first flexible substrate layer includes an orthographic projection of the first via on the first flexible substrate layer.

Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.

Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

Abstract: A display device includes: first and second display panels adjacent to each other along one direction, wherein: each of the first and second display panels includes a substrate, and a display portion on the substrate and includes a plurality of pixels including a pixel circuit layer on the substrate, at least one transistor, a display element layer on the pixel circuit layer, and at least one light emitting element emitting light; the substrate of the first display panel and the substrate of the second display panel are engaged with each other in a plan view and a cross-sectional view; the display portion of the first display panel and the display portion of the second display panel are engaged with each other in a plan view and a cross-sectional view; and a boundary between the display portion of the first display panel and the display portion of the second display panel.

Abstract: Provided is a mother substrate comprising a glass substrate including a plurality of cutting lines, an organic film overlapping the plurality of cutting lines on the glass substrate, and a plurality of cells spaced apart from each other with each of the plurality of cutting lines therebetween on the glass substrate.

Abstract: An OLED display screen and a method for manufacturing the same are provided. The OLED display screen includes a first substrate; a fastener disposed on a side of a surface of the first substrate; a second substrate disposed on a surface of the fastener far away from the first substrate; and a flexible display module extending and bent from a surface of the first substrate far away from the fastener to a surface of the second substrate far away from the fastener, wherein a gap without a filler is provided between the flexible display module and the fastener.

Abstract: A display substrate has a display area, an opening area and an isolation area located between the display area and the opening area and surrounding the opening area, and the display area is disposed at least partially around the opening area. The display substrate includes a flexible base having a via hole located in the opening area. The flexible base includes an amorphous silicon layer. The amorphous silicon layer includes a first portion located in the isolation area and a second portion located in the display area, and a thickness of the first portion is greater than a thickness of the second portion.

Abstract: A flexible display panel includes a glass substrate, a circuit layer disposed on the glass substrate and configured to drive a pixel, a light-emitting element layer disposed on the circuit layer, an encapsulation layer which covers the circuit layer and the light-emitting element layer, a polarizing plate disposed on the encapsulation layer, and a cover glass disposed on the polarizing plate, at least one of the glass substrate and the cover glass includes a buffer portion, the buffer portion includes an organic filler and glass, the glass of the buffer portion has a thickness less than or equal to a thickness of the glass substrate and includes a pattern of a specific shape, thus, rigidity of a folding portion in which the buffer portion is located can be increased due to the glass in the buffer portion.

Abstract: A display device includes a substrate and a transistor disposed on the substrate and including a semiconductor layer, wherein the semiconductor layer includes a mesh structure, and wherein a plurality of openings are formed in the semiconductor layer.

Abstract: The present invention is about display technology. A display panel and a display device are provided. The display panel includes: a substrate layer; a data line arranged on the substrate layer; a color resist layer which is arranged on the substrate layer and located at two sides of the data line, and includes grooves which are located at least at one side of the data line; a shielding layer arranged on the color resist layer and arranged over the data line; a pixel electrode layer arranged over the shielding layer; and a passivation layer arranged between the shielding layer and the pixel electrode layer and covering the shielding layer and the color resist layer.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A method for manufacturing an electronic device is provided by the disclosure. A flexible substrate is provided, in which the flexible substrate has two surfaces opposite to each other. A circuit is formed on one of the surfaces of the flexible substrate. A through hole is formed in the flexible substrate. A conductive bridge is formed in the through hole. A supporting substrate is attached to the other surface of the flexible substrate. An opening penetrating the supporting substrate is formed, and the opening corresponds to the through hole in the flexible substrate. An electronic component is mounted on the supporting substrate, and the electronic component is allowed to be electrically connected to the circuit through the conductive bridge.