Abstract: A method of forming a package is provided. The method comprises assembling on a carrier a stack of chip layers including a plurality of first chip layers and a second chip layer; encapsulating the stack of chip layers in a molding compound; removing the carrier to form a package main body; forming a redistribution layer on an exposed side of a first chip layer; and dividing the package main body to form a plurality of packages. Each first chip layer includes first chips and chip couplers. A chip package includes at least one chip stack and at least one chip coupler stack on a singulated redistribution layer. Each chip stack includes at least one chip from each chip layer, and each chip coupler stack includes at least one chip coupler and/or at least one chip coupler segment from each of the first chip layers.

Abstract: A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

Abstract: A package structure including a semiconductor die, a redistribution layer, a plurality of antenna patterns, a die attach film, and an insulating encapsulant is provided. The semiconductor die have an active surface and a backside surface opposite to the active surface. The redistribution layer is located on the active surface of the semiconductor die and electrically connected to the semiconductor die. The antenna patterns are located over the backside surface of the semiconductor die. The die attach film is located in between the semiconductor die and the antenna patterns, wherein the die attach film includes a plurality of fillers, and an average height of the die attach film is substantially equal to an average diameter of the plurality of fillers. The insulating encapsulant is located in between the redistribution layer and the antenna patterns, wherein the insulating encapsulant encapsulates the semiconductor die and the die attach film.

Abstract: A display substrate and a display device are provided. The display substrate includes a base and subpixels. The subpixel includes: a data line pattern; a power source signal line pattern including a portion extending in the first direction; and a subpixel driving circuitry. The subpixel driving circuitry includes two switching transistors, a driving transistor, and a storage capacitor. First and second electrode plates of the storage capacitor are coupled to a gate electrode of the driving transistor and the power source signal line pattern respectively. Second electrodes of the two switching transistors are coupled to a first electrode of the driving transistor. An orthogonal projection of the second electrode of at least one of the switching transistors onto the base at least partially overlaps an orthogonal projection of the power source signal line pattern onto the base, and at least partially overlaps an orthogonal projection of the second electrode plate of the storage capacitor onto the base.

Abstract: Various embodiments include combined lens and safety enclosure apparatuses and methods for forming the apparatuses. In one example a combined lens and safety enclosure apparatus for a light-emitting diode (LED) module is disclosed. The enclosure apparatus includes at least one plastic-material-based optical-lens element mounted over a plurality of LED elements, where a distance between the optical-lens element and any portion of any one of the plurality of LED elements is spaced away from each other by at least 0.8 mm. A driver-on-board (DoB) subsystem, including an electronic circuit configured to provide power to the plurality of LED elements, has a plastic-material-based optical enclosure mounted over the DoB subsystem. A distance between the optical enclosure and any portion of any of the electronic circuit is spaced away from optical enclosure by at least 0.8 mm. Other devices and methods are described.

Abstract: A sputtering target and a method for fabricating an electronic device using the same are provided. A sputtering target may include a carbon-doped GeSbTe alloy, wherein, for the carbon-doped GeSbTe alloy, an average grain diameter of a GeSbTe alloy after sintering is in a range of 0.5 ?m to 5 ?m, and a first ratio of an average grain diameter of carbon after the sintering is Y (?m) to the average grain diameter of the GeSbTe alloy after the sintering may be in a range of greater than 0.5 and equal to or less than 1.5. Alternatively, for the carbon-doped GeSbTe alloy, a condition of Y=X×(Z/100) may be satisfied, where an average grain diameter of a GeSbTe alloy after sintering is X (?m), an average grain diameter of carbon after the sintering is Y (?m), and a content of carbon is Z (at %).

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A packaged semiconductor device includes a molded interconnect substrate having a signal layer including a first channel and a second channel on a dielectric layer with vias, and a bottom metal layer for providing a ground return path. The signal layer includes contact pads, traces of the first and second channel include narrowed trace regions, and the bottom metal layer includes a patterned layer including ground cut regions. DC blocking capacitors are in series within the traces of the first and second channel for providing AC coupling that have one plate over one of the ground cuts. An integrated circuit (IC) includes a first and a second differential input channel coupled to receive an output from the DC blocking capacitors, with a bump array thereon flip chip mounted to the contact pads to provide first and second differential output signals.

Abstract: A method includes coating a release film over a carrier. The carrier includes a first material having a first Coefficient of Thermal Expansion (CTE), and a second material having a second CTE different from the first CTE. The method further includes placing a device die over the release film, encapsulating the device die in an encapsulant, and planarizing the encapsulant until the device die is revealed.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: A device and method for fabrication thereof is provided which results in corrosion resistance of metal flanges (802) of a semiconductor package, such as a quad flat no-lead package (QFN). Using metal electroplating (such as electroplating of nickel (Ni) or nickel alloys on copper flanges of the QFN package), corrosion resistance for the flanges is provided using a process that allows an electric current to reach the entire backside of a substrate (102) to permit electroplating. In addition, the method may be used to directly connect a semiconductor die (202) to the metal substrate (102) of the package.

Abstract: A method of forming a semiconductor device includes attaching a first local interconnect component to a first substrate with a first adhesive, forming a first redistribution structure over a first side of the first local interconnect component, and removing the first local interconnect component and the first redistribution structure from the first substrate and attaching the first redistribution structure to a second substrate. The method further includes removing the first adhesive from the first local interconnect component and forming an interconnect structure over a second side of the first local interconnect component and the first encapsulant, the second side being opposite the first side. A first conductive feature of the interconnect structure is physically and electrically coupled to a second conductive feature of the first local interconnect component.

Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.

Abstract: A display apparatus includes a substrate including a main display area and a component area. The component area includes an auxiliary display area and a transmission area. Main display elements are disposed in the main display area. Auxiliary display elements are disposed in the component area. A thin-film encapsulation layer covers the main display elements and the auxiliary display elements. An optical functional layer is disposed on the thin-film encapsulation layer and includes a polarization layer. The polarization layer includes a first portion disposed in the transmission area and a second portion disposed in the main display area and the auxiliary display area.

Abstract: A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages.

Abstract: A method for manufacturing a light-emitting device includes: forming a cover, which comprises: sandwiching a fixing member by a molding device, injecting a light-transmissive material into a space defined in the molding device, and hardening or curing the injected light-transmissive material, wherein the formed cover comprises an upper portion, a sidewall, and a recess, the cover being integrated with the fixing member such that the fixing member projects from a part of an outer lateral surface of the sidewall; disposing a light-transmissive member on a light extraction surface of a light-emitting element to be disposed on a substrate; and disposing the cover so that the light-emitting element is housed in the recess. The fixing member is formed of a material that is deformable due to a pressing force generated in the event of an engagement with a counterpart member.

Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.

Abstract: Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

Abstract: Generally discussed herein are systems, devices, and methods to reduce crosstalk interference. An interconnect structure can include a first metal layer, a second metal layer, a third metal layer, the first metal layer closer to the first and second dies than the second and third metal layers, the first metal layer including a ground plane within a footprint of a bump field of the interconnect structure and signal traces outside the footprint of the bump field.

Abstract: A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.