Abstract: A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a plurality of chips arranged on the base substrate each including a chip main body and a plurality of terminals arranged thereon; a plurality of fixed connection portions arranged on the base substrate, and adjacent to the plurality of chips; a terminal expansion layer arranged on the base substrate; and a plurality of expansion wires in the terminal expansion layer and configured to electrically connect the chips, wherein an expansion wire configured to electrically connect two chips includes at least a first wire segment and a second wire segment, and the first wire segment is configured to electrically connect a terminal of a chip and a fixed connection portion adjacent to the chip, and the second wire segment is configured to connect two fixed connection portions between the two chips.

Abstract: The semiconductor device includes a first semiconductor component including a first circuit section and an interconnection connected to the first circuit section, and a second semiconductor component including a second circuit section and a third circuit section and stacked on the first semiconductor component. The interconnection is electrically connected to a first connecting portion and a second connecting portion of a plurality of connecting portions for electrically connecting the first semiconductor component and the second semiconductor component. The second circuit section is electrically connected to the interconnection via the first connecting portion. The third circuit section is electrically connected to the interconnection via the second connecting portion.

Abstract: A semiconductor device package includes a first semiconductor device having a first surface, an interconnection element having a surface substantially coplanar with the first surface of the first semiconductor device, a first encapsulant encapsulating the first semiconductor device and the interconnection element, and a second semiconductor device disposed on and across the first semiconductor device and the interconnection element.

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material, a redistribution structure, and an adhesive residue. The encapsulating material encapsulates a first part of a side surface of the semiconductor device. The redistribution structure is disposed over the semiconductor device and a first side of the encapsulating material. The adhesive residue is disposed over a second side of the encapsulating material opposite to the first side and surrounding the semiconductor device, wherein the adhesive residue encapsulates a second part of the side surface of the semiconductor device.

Abstract: A field stop insulated gate bipolar transistor (IGBT) fabricated without back-side laser dopant activation or any process temperatures over 450° C. after fabrication of front-side IGBT structures provides activated injection regions with controlled dopant concentrations. Injection regions may be formed on or in a substrate by epitaxial growth or ion implants and diffusion before growth of N field stop and drift layers and front-side fabrication of IGBT active cells. Back-side material removal can expose the injection region(s) for electrical connection to back-side metal. Alternatively, after front-side fabrication of IGBT active cells, back-side material removal can expose the field stop layer (or injection regions) and sputtering using a silicon target with a well-controlled doping concentration can form hole or electron injection regions with well-controlled doping concentration.

Abstract: An electronic assembly has a backside capping layer, a host wafer having a back surface bonded to a top surface of the backside capping layer except for cavities in the wafer formed over areas of the backside capping layer, the cavities having side surfaces of the wafer. Chiplets have backsides bonded directly to at least portion of the areas of the top surface of the backside capping layer. A lateral dielectric material between side surfaces of the chiplets and side surfaces of the wafer, mechano-chemically bonds the side surfaces of the chiplets to the side surfaces of the wafer.

Abstract: A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages. Corresponding structures result from these methods.

Abstract: An electronic element mounting substrate according to an aspect of the present disclosure is provided with a substrate and a plurality of electrodes. The substrate includes an electronic element mounting region. The plurality of electrodes are located around the electronic element mounting region. The substrate includes the electronic element mounting region and at least one of a first protrusion portion spanning between the plurality of electrodes or a second protrusion portion spanning between the plurality of electrodes from an outer edge of the substrate in a plan view.

Abstract: A semiconductor device having a large storage capacity per unit area is provided.

Abstract: A carrier film for performing a semiconductor package process on a mother substrate including a multi-layer circuit, a mother substrate, and a method of manufacturing a semiconductor package, the carrier film including a base material layer having a predetermined stiffness; and an adhesive layer configured to attach the base material layer onto the mother substrate, the adhesive layer including a water soluble material, wherein the carrier film includes a plurality of openings passing therethrough from a top surface to a bottom surface thereof.

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.

Abstract: Color conversion layers, methods of making color conversion layers, monolithic color, micro-light-emitting diode displays and methods of making monolithic, color, micro-light-emitting diode displays are disclosed.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: Methods and apparatus for estimating the fidelity of quantum hardware. In one aspect, a method includes accessing a set of quantum gates; sampling a subset of quantum gates from the set of quantum gates, wherein the subset of quantum gates defines a quantum circuit; applying the quantum circuit to a quantum system and performing measurements on the quantum system to determine output information of the quantum system; calculating output information of the quantum system based on application of the quantum circuit to the quantum system; and estimating a fidelity of the quantum circuit based on the determined output information and the calculated output information of the quantum system.

Abstract: Three-dimensional integrated circuit (3DIC) structures and methods of forming the same are provided. A 3DIC structure includes a semiconductor package, a first package substrate, a molded underfill layer and a thermal interface material. The semiconductor package is disposed over and electrically connected to the first package substrate through a plurality of first bumps. The semiconductor package includes at least one semiconductor die and an encapsulation layer aside the semiconductor die. The molded underfill layer surrounds the plurality of first bumps and a sidewall of the semiconductor package, and has a substantially planar top surface. The CTE of the molded underfill layer is different from the CTE of the encapsulation layer of the semiconductor package. The thermal interface material is disposed over the semiconductor package.

Abstract: Various systems and methods are provided for quantum computing based optimization of a personalized portfolio. One exemplary method may comprise identifying one or more filtered personalized portfolio optimization factor data based on one or more optimization factor data for the personalized portfolio, personalized portfolio owner feedback, QC algorithms, and algorithm performance information, selecting one QC algorithm for each filtered portfolio optimization factor data of the one or more filtered portfolio optimization factor data, utilizing the selected QC algorithm to optimize a personalized portfolio determination for each identified filtered personalized portfolio optimization factor data, and rebalancing the personalized portfolio based on the personalized portfolio determination.

Abstract: Various systems and methods are provided for quantum computing based optimization of a personalized portfolio. One exemplary method may comprise identifying one or more filtered personalized portfolio optimization factor data based on one or more optimization factor data for the personalized portfolio, personalized portfolio owner feedback, QC algorithms, and algorithm performance information, selecting one QC algorithm for each filtered portfolio optimization factor data of the one or more filtered portfolio optimization factor data, utilizing the selected QC algorithm to optimize a personalized portfolio determination for each identified filtered personalized portfolio optimization factor data, and rebalancing the personalized portfolio based on the personalized portfolio determination.

Abstract: Methods, systems, and devices for techniques for forming self-aligned memory structures are described. Aspects include etching a layered assembly of materials including a first conductive material and a first sacrificial material to form a first set of channels along a first direction that creates a first set of sections. An insulative material may be deposited within each of the first set of channels and a second sacrificial material may be deposited onto the first set of sections and the insulating material. A second set of channels may be etched into the layered assembly of materials along a second direction that creates a second set of sections, where the second set of channels extend through the first and second sacrificial materials. Insulating material may be deposited in the second set of channels and the sacrificial materials removed leaving a cavity. A memory material may be deposited in the cavity.

Abstract: Disclosed is a method for manufacturing an electronic component device, including: preparing a sealing structure including a sealing layer having two opposing main surfaces, an electronic component, and a connection portion, the connection portion being exposed on a circuit surface that is one main surface of the sealing layer; preparing a rewiring structure including a rewiring portion having two opposing main surfaces, and a plurality of bumps; and bonding the sealing structure and the rewiring structure in a direction that the circuit surface and the plurality of bumps face each other, with an insulating adhesive layer intervening, and thereby connecting the sealing structure and the rewiring structure.

Abstract: A transparent display device may reduce or minimize a size of a non-transmissive area and improve light transmittance. The transparent display device comprises a substrate provided with transmissive areas and a plurality of subpixels disposed between the transmissive areas, a first electrode provided in each of the plurality of subpixels, including a first divided electrode and a second divided electrode, a connection electrode connecting the first divided electrode with the second divided electrode in a straight line, an organic light emitting layer provided over the first electrode, and a second electrode provided over the organic light emitting layer.