Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.

Abstract: Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

Abstract: Generally discussed herein are systems, devices, and methods to reduce crosstalk interference. An interconnect structure can include a first metal layer, a second metal layer, a third metal layer, the first metal layer closer to the first and second dies than the second and third metal layers, the first metal layer including a ground plane within a footprint of a bump field of the interconnect structure and signal traces outside the footprint of the bump field.

Abstract: A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor package structure. The semiconductor package structure includes a substrate with a first surface, an encapsulant, an electronic component, and a patterned conductive layer. The encapsulant is disposed on the first surface of the substrate. The encapsulant includes a first surface and a second surface. The patterned conductive layer extends on the first surface and the second surface of the encapsulant and protrudes from the first surface and the second surface of the encapsulant. The electronic component is disposed on the patterned conductive layer.

Abstract: A semiconductor device includes a substrate, a gate insulating layer on the substrate, and a stacked semiconductor layer. The stacked semiconductor layer includes a first layer formed on the gate insulating layer and including a phosphorus-doped polycrystalline semiconductor, a second layer formed on the first layer and including a carbon-doped polycrystalline semiconductor, and a third layer formed on the second layer and including a phosphorus-doped or undoped polycrystalline semiconductor. The semiconductor device further includes a metal layer on or above the stacked semiconductor layer. The third layer includes less phosphorus than the first layer or does not include phosphorus.

Abstract: Methods and OLED devices are provided in which organic emissive materials are deposited over a substrate via OVJP print heads in a continuous line extending from one edge of the active display portion of a substrate to another. The print heads are arranged such that the sidewalls of the OVJP jet are disposed over non-emissive insulating portions of the display panel, thereby allowing for improved pixel density and resolution in comparison to conventional OVJP and similar techniques.

Abstract: In a method of forming a semiconductor device, a plurality of transistor pairs is formed to be stacked over a substrate. The plurality of transistor pairs have a plurality of gate electrodes that are stacked over the substrate and electrically coupled to gate structures of the plurality of transistor pairs, and a plurality of source/drain (S/D) local interconnects that are stacked over the substrate and electrically coupled to source regions and drain regions of the plurality of transistor pairs. A sequence of vertical and lateral etch steps are performed to etch the plurality of the gate electrodes and the plurality of S/D local interconnects so that the plurality of the gate electrodes and the plurality of S/D local interconnects have a staircase configuration.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.

Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate structure disposed over the first and second channels. The gate structure includes a gate dielectric layer and a gate electrode layer. The first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer. The first source and the second source are connected by an alloy layer made of one or more Group IV element and one or more transition metal elements. The first crystal semiconductor layer is not in direct contact with the second crystal semiconductor layer.

Abstract: A light emitting diode (LED) package structure include an electrically-insulated frame, a trough, a LED chip, a fluorescent colloid and at least two spacing members. The electrically-insulated frame has a surface with four corners. The trough is recessed in the surface. The LED chip is located in the trough. The fluorescent colloid is filled within the trough to cover the LED chip. The spacing members protrude from two of the four corners on the surface, wherein a glue escape gap is defined between each spacing member and a boundary of the trough.

Abstract: The silicon carbide semiconductor device includes: a silicon carbide layer; a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen; and a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen, wherein the maximum nitrogen concentration in the transition region is 1.0×1020 cm?3 or higher. The maximum nitrogen concentration in the transition region is five or more times higher than the maximum nitrogen concentration in the silicon dioxide layer.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, a pixel drive layer, a light-emitting device, an encapsulation layer, a first insulation layer, and a covering layer. The base substrate includes a display region and a peripheral region, the peripheral region includes a first peripheral region and a second peripheral region. The first insulation layer is in the second peripheral region, and includes a first notch, a side edge of the first notch away from the display region overlaps with the edge of the base substrate. The covering layer is at least partially filled in the first notch, and an orthographic projection of the covering layer on the base substrate at least partially overlaps with an orthographic projection of the first notch on the base substrate.

Abstract: According to one embodiment, a semiconductor storage device includes a stacked structure in which a plurality of conductive layers is stacked in a stacking direction via an insulating layer, a plurality of pillars extending in the stacking direction in the stacked structure and including a memory cell formed at an intersection between at least a part of the plurality of conductive layers and at least a part of the plurality of pillars, a plurality of first contacts arranged in the stacked structure, each of the first contacts reaching a different depth in the stacked structure and being connected to a conductive layer in a different layer among the plurality of conductive layers, and a plurality of second contacts arranged in the stacked structure separately from the plurality of first contacts, each of the second contacts being connected to a conductive layer identical to the conductive layer to which corresponding one of the plurality of first contacts is connected.

Abstract: The present invention relates to a process for manufacturing an optoelectronic device, wherein a layer of a formulation containing a silazane polymer and a wavelength converting material is applied to an optoelectronic device precursor, precured by exposure to radiation and then cured. There is further provided an optoelectronic device, preferably a light emitting device (LED) or a micro-light emitting device (micro-LED), which is prepared by said manufacturing process.

Abstract: A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) measuring an amount of a molding powder; (b) controlling the amount of a molding powder; and (c) dispensing the molding powder on an assembly structure including a carrier and at least one semiconductor device disposed on the carrier.

Abstract: A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.

Abstract: A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).

Abstract: A display device may include a substrate. A first light emitting element is disposed on the substrate. A second light emitting element is disposed on the substrate and is positioned adjacent to the first light emitting element. A first encapsulation layer is disposed on the first light emitting element and the second light emitting element. A light path control layer is disposed on the first encapsulation layer. The light path control layer includes a first pattern overlapping the first light emitting element and having a first refractive index and a second pattern overlapping the second light emitting element and having a second refractive index that is greater than the first refractive index.