Abstract: A multiple polarity reversible charge pump circuit is disclosed which, in certain embodiments, may be configured to generate a positive voltage at times and may be reversed to generate a negative voltage at other times. Such a charge pump circuit is advantageous if both the positive and negative voltage are not simultaneously required. In certain other embodiments, a charge pump circuit generates a high output current for only a positive boosted voltage in one mode of operation, but lower current positive and negative boosted voltage outputs in another mode of operation. Use with certain erasable memory array technologies is disclosed, particularly certain resistive passive element memory cells, and more particularly in a three-dimensional memory array.

Abstract: Unified voltage generation techniques for efficiently generating a plurality of operational voltages for use within an electronic device, such as a memory system (e.g., memory product) providing data storage, are disclosed. A voltage generation circuit can generate a regulated base output voltage. The voltage generation circuit can include one or more voltage output circuits that produce different operational voltages from the regulated base output voltage. According to one aspect of the invention, the voltage output circuits can be disabled when the different operational voltages are at their appropriate voltage potentials, thereby reducing power consumption by the voltage output circuits. The voltage generation circuit is therefore able to operate with improved power efficiency.

Abstract: There is an internal voltage generating circuit for providing a stable internal voltage by supplying the internal voltage before a time point when it is used. The internal voltage generating circuit includes a charge pump unit for generating an internal voltage lower than an external voltage in response to pumping control signals and a supply driving control signal; a pumping control signal generating unit for outputting the pumping control signals to the charge pump unit based on a driving signal; and a supply driving control unit for receiving the driving signal to generate the supply driving control signal to the charge pump unit.

Abstract: A clock signal synchronization method and an apparatus device for utilization with the synchronization of clock signals is disclosed. In one embodiment the apparatus includes a delay device with a variably controllable delay time into which a clock signal, or a signal obtained therefrom, is input, charged with the variably controllable delay time, and output as a delayed clock signal. A device is provided for determining whether a clock edge of the delayed clock signal output by the delay device, or of a signal obtained therefrom, lies within a predetermined time window before a corresponding clock edge of the clock signal, or of the signal obtained therefrom.

Abstract: A modulator control circuit including a linear control circuit, a non-linear control circuit, and a combiner. The linear control circuit has an input receiving a compensation signal indicative of an output parameter and an output providing a first control signal. The non-linear control circuit has an input receiving the compensation signal and an output providing a second control signal. The non-linear control circuit senses transients of the compensation signal not otherwise detected by the linear control circuit and asserts the second control signal indicative thereof. The combiner combines the first and second control signals to provide a pulse width modulation signal for controlling the output parameter, such as output voltage or the like.

Abstract: A semiconductor device including a plurality of current mirror circuits is disclosed. The current mirror circuits having reference input terminals and output terminals respectively. Each of the reference input terminals is provided with a current having a different current value. Each of the output terminals of the current mirror circuits are connected to a current output terminal. The output currents of the current mirror circuits are controlled by a control circuit.

Abstract: In many high voltage circuits, it often needs to shift the logic voltage level to keep the circuit normal operation. In the class-D amplifier circuitry, it needs to shift the voltage level of pulse width modulation (PWM) signal to control the connecting of different power switches. In other applications, such as a driver to drive amplifier of an audio device, it also needs a level shift circuit to maintain the circuitry in normal voltage operation. Therefore, this invention is to provide a novel level shift circuit with high performance, low cost and low power dissipation characteristics.

Abstract: A low-pass filter with a high signal-to-noise ratio is provided. A low-pass filter includes a first RC filter circuit, a differential operation circuit subtracting an output signal from a low frequency component of an input signal and outputting a differential signal, a second RC filter circuit, a voltage-current conversion circuit, and a capacitor. The voltage-current conversion circuit includes an operational amplifier, a first resistor, and a feedback circuit generating a feedback voltage in accordance with a voltage applied to the first resistor. If resistance values of first to fourth resistors are R1, R2, R3, R4, a relational expression of R1*R3=R2*R4 is satisfied, and output current i becomes constant regardless of a resistance value of a load resistance. Since only a first resistor is connected between the input and the output of the voltage-current conversion circuit, thermal noise decreases, and a signal-to-noise ratio becomes high.

Abstract: A voltage pump circuit that has an oxide stress control mechanism is disclosed. In particular, the oxide stress control mechanism of the voltage pump circuit ensures a safe transistor gate-to-source voltage in high-voltage applications in an integrated circuit. In particular, the down level of the gate voltage of the output transistor may be conditionally limited. For example, an offset in the down level of the gate voltage is created by conditionally developing an offset voltage in the lower rail voltage of the gate driver. The offset voltage is created by directing a predetermined current through a resistance. The current is conditional such that the current is about zero when the power supply voltage is less than or equal to a predetermined level, and the current is greater than zero when the power supply voltage is greater than a predetermined level.

Abstract: A method and system is disclosed for device trimming. A device trimming system comprises at least one reference device to be trimmed having a reference electrical parameter, at least one trimming device to be coupled with the reference device for forming a trimmed reference device providing an altered reference electrical parameter based on a combination of the reference device and the trimming device, and at least one electrical fuse based control module for controlling whether the trimming device is to be coupled with the reference device based on a state of the electrical fuse.

Abstract: A method and apparatus compensate for process variations in the fabrication of semiconductor devices. A semiconductor device includes a control circuit that measures a performance parameter of the device, and in response thereto selectively biases one or more well regions of the device to compensate for process variations. For some embodiments, if measurement of the performance parameter indicates that the device does not fall within a specified range of operating parameters, the control circuit biases selected well regions to sufficiently alter the operating characteristics of transistors formed therein so that the device falls within the specified range of operating parameters.

Abstract: A temperature compensated delay circuit for delaying a signal within an integrated circuit includes a temperature sensor. The temperature sensor is configured to sense a temperature proximal to the integrated circuit and configured to provide a control signal representative of the sensed temperature proximal to the integrated circuit. A delay chain is configured to receive a signal and provide a plurality of output signals. Each output signal has a time delay distinct from other output signals. A multiplexer is configured to receive the plurality of output signals from the delay chain and to receive the control signal from the temperature sensor representative of the sensed temperature. The multiplexer is configured to provide a temperature compensated delayed output signal.

Abstract: An internal voltage generating apparatus includes: a voltage detector that detects the level of the internal voltage and outputs a fixed level detection signal and a variable level detection signal. An oscillation controller generates an oscillation enable signal according to whether the fixed level detection signal and the variable level detection signal are enabled. An internal voltage generator generates the internal voltage in response to the oscillation enable signal.

Abstract: A bias circuit for use in bandgap voltage reference circuits and temperature sensors comprises a pair of transistors (Q, Q2), the first of which (Q1) is arranged to be biased at an emitter current lbias, and the second of which (Q2) is arranged to be biased at an emitter current of m.lbias. The circuit is arranged such that the difference between the base-emitter voltages of the transistors is generated in part across a first resistance means having a value Rbias and in use carrying a bias current equal to lbias and in part across a second resistance means of value substantially equal to Rbias/m and in use carrying a current equal to the base current of the second transistor. This results in use in a bias current Ibias which, when used to bias a substrate bipolar transistor via its emitter, produces a collector current therefrom which is substantially PTAT and a base-emitter voltage which is substantially independent of the forward current gain of the substrate bipolar transistor.

Abstract: A filter adjustment circuit has a filter capable of adjusting a cut-off frequency that is composed of a plurality of integrators connected to each other, each of which has an amplifier, a resistor connected to an input of the amplifier, a capacitor connected between the input and the output of said amplifier, and a variable resistor connected between the input and the output of said amplifier; a reference frequency generating circuit that outputs a first signal having said cut-off frequency and outputs a second signal that is out of phase with respect to said first signal to said filter; a phase comparator that compares the phase of a third signal, which is said second signal processed by and output from said filter, with the phase of said first signal to determine whether or not the frequencies of the signals are equal to each other; a reference voltage generating circuit that generates a reference voltage having a desired amplitude value for determining a Q factor; an amplitude comparator that compares the

Abstract: A single pump stage of a multi-stage charge pump couples a first low-voltage NMOS transistor in series with a first low-voltage PMOS transistor between charge transfer capacitors. A second low-voltage NMOS transistor is coupled between the gate and the source of the first NMOS transistor. A second low-voltage PMOS transistor is coupled between the gate and the source of the first PMOS transistor. Respective boost voltages are applied to gates of the first NMOS transistor and the second PMOS transistor to minimize threshold voltage losses. A stabilizing capacitor is connected between the first NMOS transistor and the second PMOS transistor.

Abstract: A current source for generating a PTAT current using two bipolar transistors with an 1:A emitter area ratio implements a split resistor architecture to cancel mismatch errors in the current mirror of the current source. In one embodiment, a first resistor is coupled to the unit area bipolar transistor and a second resistor is coupled to the A-ratio-area bipolar transistor. The first resistor has a resistance value indicative of the emitter resistance re of the bipolar transistors while the second resistor has a resistance value satisfying the equation re*(lnA?1). In another embodiment, an emitter area trim scheme is applied in a PTAT current source to cancel, in one trim operation, both bipolar transistor area mismatch error and sheet resistance variations. The emitter area trim scheme operates to modify the emitter area of the A-ratio-area bipolar transistor to select the best effective emitter area that provides the most accurate PTAT current.

Abstract: A programmable detection adjuster is disclosed. The programmable detection adjuster comprises a bandgap and an adjusting circuit. The bandgap comprises a power input terminal, a voltage output terminal, a main resistance and a plurality of resistors. The adjusting circuit comprises a plurality of adjusting resistors, a plurality of transistor switches, a logic controller and detection circuits; said adjusting resistors connected to the main resistance of the bandgap in series. The adjusting resistors are respectively connected to the transistor switch in parallel. The transistor switches are connected to the logic controller. The logic controller is respectively connected to the detection circuits. The detection circuit detects the corresponding resistances in the detection circuit and outputs a voltage level to the logic controller to enable the logic controller to control a conduction of the transistor switches according to a logic conversion table.

Abstract: A semiconductor power device includes a circuit to provide a gate signal wherein the gate signal has a negative temperature coefficient of gate driving voltage for decreasing a gate driving voltage with an increase temperature whereby the semiconductor power device has a net Ids temperature coefficient that is less than or equal to zero. In an exemplary embodiment, the gate voltage driver includes a diode that has a negative forward voltage temperature coefficient connected between a gate and a source of the semiconductor power device. In another embodiment, the gate voltage is integrated with the semiconductor power device manufactured as part of an integrated circuit with the semiconductor power device.

Abstract: A power source circuit adapted to output a first set potential which is set according to a first selection signal, or a second set potential which is set according to a second selection signal and higher than the first set potential, has an output terminal adapted to output the first set potential or the second set potential; a first boosting circuit adapted to boost a voltage supplied from a power source and to output the boosted voltage to the output terminal; a second boosting circuit adapted to boost the voltage supplied from the power source and to output the boosted voltage to the output terminal; a voltage dividing circuit adapted to output a monitor potential by dividing the output potential outputted from the output terminal according to the first selection signal, or to output a monitor potential by dividing the output potential and reducing a voltage dividing ratio of the monitor potential with respect to the output potential according to the second selection signal; a comparison amplifier adapted