Abstract: An electrical circuit comprising a first metal oxide silicon (MOS) n type field effect transistor (NFET) or p type field effect transistor (PFET) and a second MOS NFET or PFET of the same conductivity type as the first NFET or PFET, wherein the drain of the first NFET or PFET is directly connected to the source of the second NFET or PFET, and wherein the gate of the second NFET or PFET is at a voltage value which is equal to or lower than the drain voltage value of the second NFET or PFET in the case of an NFET and equal to or higher than the drain voltage value of the second NFET or PFET in the case of a PFET.

Abstract: A charge domain filter device includes a SINC filter with a frequency characteristic expressed by a SINC function, and a bandpass filter connected to an output end of the SINC filter and having a frequency characteristic with a particular center frequency.

Abstract: There is provided a bias current generating apparatus capable of providing a bias current where a characteristic change is compensated, to one of an analog circuit and RF circuit where various characteristic changes occur according to a temperature, by generating bias currents having a plurality of temperature coefficients.

Abstract: In a voltage reference circuit, a bandgap reference circuit, for generating a bandgap reference voltage and a reference current, includes an operation amplifier, and a first transistor for providing the reference current. Another transistor mirrors the reference current to provide a first current. A compensation controller converts a node voltage from the bandgap reference circuit into a second current and performs current subtraction on the first current and the second current to provide a compensation feedback current to another node of the bandgap reference circuit. So that, second order temperature compensation is performed on the bandgap reference voltage.

Abstract: A signal generation apparatus includes a signal generation portion and a phase compensator. The phase compensator generates a phase error control signal that maintains a phase difference between the in-phase and quadrature-phase signals generated by the signal generation portion. The phase compensator includes an offset compensator and a delay compensator. The offset compensator is set to compensate for an offset voltage through the phase compensator. The delay compensator is set to compensate for a difference of delays through paths for the in-phase and quadrature-phase signals within the phase compensator.

Abstract: According to an aspect of the present invention, there is provided a reference voltage generation circuit including: a first transistor having a first gate, a first source and a first drain; a second transistor having a second gate connected to the first gate, a second source connected to the first source and a second drain; a first diode connected between a ground and a V? node; a first resistor connected between the V? node and the first drain; a second diode and a second resistor connected between the ground and a V+ node; a third resistor connected between the V+ node and the first drain; an operational amplifier including input ports connected to the V+ node and the V? node and an output port connected to the first gate and the second gate; and a fourth resistor connected between the ground and the second drain.

Abstract: A method of designing a current source involves selecting an equation for a current output through a circuit. Variations in current are checked to make sure they are not a strong function of process and bias. A circuit topology is then created as a function of the equation. Example circuits include an addition based current source and a square root based current source.

Abstract: The present invention relates to a charge pump capable of enhancing power efficiency and output voltage, which comprises a pump capacitor, a switching module, a first switch, a first buffer, a first switch, and an output capacitor. The switching module is coupled to a first terminal of the pump capacitor. The first switch is coupled between a second terminal of the pump capacitor and a supply voltage. The first buffer receives a first input signal and produces a control signal for controlling the first switch to turn on or cut off. The level of the first input signal ranges between a first voltage and a second voltage, wherein the first and the second voltages are related to the gate voltage of the first switch. The gate voltage of the first switch is a multiple, which is greater than one, of the supply voltage. Thereby, the impedance of the switch is reduced, and hence the power efficiency of the charge pump, the output voltage level, and the area efficiency of integrated circuits are improved.

Abstract: Level shifting circuits and methods are disclosed. One embodiment provides a high speed level shifting circuit that uses an input signal to generate two intermediate signals and uses the intermediate signals to generate an output signal such that voltage stress on individual devices within the level shifting circuit is minimized. One embodiment includes a first driver and second driver coupled in parallel to provide intermediate signals to an output driver. In a particular aspect, individual transistors of the output driver are subject to voltage stresses that are less than the peak-to-peak amplitude of the output signal. In one embodiment, the first driver includes an n-channel metal oxide semiconductor (“NMOS”) cascode circuit, the second driver includes a p-channel metal oxide semiconductor (“PMOS”) cascode circuit, and the output driver includes a complementary metal oxide conductor (“CMOS”) inverter stage.

Abstract: A sense amplifier control signal generating circuit of a semiconductor memory apparatus is provided. The sense amplifier control signal generating circuit includes a timing control unit that models a transmission path of data from a memory cell to a sense amplifier through a bit line and generates a timing control signal at a sensing timing when the sense amplifier starts a sensing operation. A sense amplifier control signal generating unit receives the timing control signal and generates a sense amplifier control signal.

Abstract: A delayed locked loop (DLL) system and method for determining a forward clock path delay are disclosed. One embodiment of the DLL system includes a delay line having a plurality of delay stages. The DLL system also includes a measure shot device configured to determine a forward clock path delay of the DLL system. The measure shot device is configured to provide a calibration sequence into the DLL loop and to detect the calibration sequence after the calibration sequence has passed through the DLL loop. The measure shot device is further configured to count the number of clocks for a period of time between providing and detecting the calibration sequence. The number of clocks can be used to calibrate components of the DLL system.

Abstract: A bandgap reference circuit which is operable in low supply conditions is described. Such a circuit includes a second amplifier and a resistor at the output of a bandgap reference cell to create a constant current summing node at which PTAT and CTAT currents are summed. In modifications to the circuit it is possible to also provide a voltage reference node corresponding to the signal provided at the summing node. A further modification enables generation of a second voltage reference whose value is related to the base emitter voltage Vbe of a bipolar transistor. Further modifications provided for the generation of curvature correction within the circuit by biasing each of the first and second bipolar transistors Q1 and Q2 with currents of different forms.

Abstract: The present invention discloses a voltage level generating device. The voltage level generating device includes: a reference voltage generating module, a first circuit module, a second circuit module, and a switch module. The voltage level generating device disclosed in the present invention only requires a buffer, a voltage regulator, and a arithmetic logic unit (ALU) to attain the same function of the conventional common voltage level generating device, and thus the circuit layout area can be reduced so as to decrease the cost of the integrated circuit (IC). In addition, the voltage level generating device disclosed in the present invention also can select different output of voltage level in order to reduce the power consumption of a display device.

Abstract: An exponential charge pump uses a number of identical or similar charging stages, each having a first and second capacitor. During a first clock phase, the first capacitor of each stage is charged by the second capacitor of the preceding stage, and, during a complementary second clock phase, the positive plate of the first capacitor of each stage is pushed to an increased voltage by the first capacitor of the preceding stage and charges the second capacitor of the next stage to the increased voltage at the same time. A similar mechanism occurs to the second capacitors in each stage, but with complementary timing. The increased voltage of the first capacitor of the last stage is pumped to an output capacitor during the second clock phase, and the increased voltage of the second capacitor of the last stage is pumped to an output capacitor during the first clock phase.

Abstract: Calibration circuitry and method for maintaining constant signal detection thresholds for multiple signal receivers that receive data signals in the form of current signals. A value of one of the incoming current signals having a predetermined signal pattern is detected and used to generate threshold control signals for each of the signal receivers to control the data signal detection thresholds.

Abstract: In an embodiment, a bias generator circuit comprises a first circuit and a second circuit. The first circuit includes a first input coupled to a voltage source and a first output that provides a first output current having a substantially non-zero temperature coefficient. The first circuit comprises a first transistor and a second transistor. The second circuit includes a second input that receives the first output current from the first circuit and a second output that provides a second output current. The second circuit comprises a third transistor and a fourth transistor. The second output current has a substantially zero temperature coefficient dependent on (i) a difference between an effective channel size of the first transistor and an effective channel size of the second transistor, and (ii) a difference between an effective channel size of the third transistor and an effective channel size of the fourth transistor.

Abstract: In order to provide a semiconductor IC unit such as a microprocessor, etc., which satisfies both fast operation and lower power consumption properties with its high quality kept, the semiconductor IC unit of the present invention is composed so as to include a main circuit (LOG) provided with transistors, which is formed on a semiconductor substrate, and a substrate bias controlling circuit (VBC) used for controlling a voltage to be applied to the substrate, and the main circuit includes switching transistors (MN1 and MP1) used for controlling a voltage to be applied to the substrate and control signals output from the substrate bias controlling circuit is entered to the gate of each of the switching transistors and the control signal is returned to the substrate bias controlling circuit.

Abstract: A charge pump circuit with bipolar output comprises a first set of switch device capable of selectively connecting two terminals of a first transfer capacitor to a voltage source and a ground terminal, respectively, a second set of switch device capable of selectively connecting the two terminals of the first transfer capacitor to a grounded first storage capacitor and the voltage source, respectively, a third set of switch device capable of selectively connecting two terminals of a second transfer capacitor to the first transfer capacitor connected to the voltage source and the ground terminal, respectively, and a fourth set of switch device capable of selectively connecting the two terminals of the second transfer capacitor to a grounded second storage capacitor and the ground terminal, respectively.

Abstract: An exemplary programming circuit (40) includes an input terminal (42) configured for receiving an external high voltage signal, a driving circuit (20), a switch circuit (43) connected between the input terminal and the driving circuit, and a feedback circuit (45). When the external high voltage signal is larger than a normal value thereof, the feedback circuit outputs a first control signal to turn off the switch circuit. When the external high voltage signal is less than the normal value thereof, the feedback circuit also outputs the first control signal to turn off the switch circuit. When the external high voltage signal is equal to the normal value thereof, the feedback circuit outputs a second control signal to turn on the switch circuit.

Abstract: A bandgap voltage reference circuit with an inherent curvature correction which comprises an amplifier having an inverting terminal, a non-inverting terminal and an output terminal is described. A first and second bipolar transistor operable at different current densities are provided each of the transistors being coupled to a corresponding one of the inverting and non-inverting terminals of the amplifier such that a ?Vbe is reflected across a first load element. A current biasing circuit is provided which includes a semiconductor device coupled to each of the first and second bipolar transistors and is configured for applying a non-linear bias current to the first and second bipolar transistors for biasing thereof.