Abstract: A solventless system for fabricating electrodes includes a mechanism for feeding a substrate through the system, a first application region comprised of a first device for applying a first layer to the substrate, wherein the first layer is comprised of an active material mixture and a binder, and the binder includes at least one of a thermoplastic material and a thermoset material, and the system includes a first heater positioned to heat the first layer.

Abstract: A method for selectively metallizing a surface of a ceramic substrate, a ceramic product and use of the ceramic product are provided.

Abstract: Amorphous silicon doped yttrium oxide films and methods of making same are described. Deposition of the amorphous silicon doped yttrium oxide film by thermal chemical vapor deposition or atomic layer deposition process are described.

Abstract: Provided is a pore-filling method for protecting the pores of a porous material. The method, which is performed using a modified i-CVD technique, involves filling the pores of a porous material with a gas phase monomer within a pressure chamber and subsequently polymerizing the monomer, both within the pores and on the surface of the material as an overburden. The method is solvent-free and can fill and protect pores of any size of any material.

Abstract: A laser etching apparatus includes a chamber, a laser port, a laser emitter, a particle grabber, and a revolving window module. The chamber is configured to receive a substrate. The laser port is disposed below the chamber in a downward direction. The laser emitter is configured to emit a laser to the substrate disposed within the chamber through the laser port. The particle grabber is disposed within the chamber and includes a body disposed over the laser port. An opening is formed through the body. The opening is configured to pass the laser therethrough. The revolving window module includes a revolving window and a driving part configured to drive the revolving window. The revolving window is disposed between the particle grabber and the laser port.

Abstract: Systems for processing a material by submerging the material in a fluid and directing laser pulses at the fluid and the material for processing the material. An embodiment removes the surface of concrete, brick, or rock or minerals in a relatively gentle, energy-efficient, and controlled manner that also confines the material that is removed.

Abstract: A method for producing a consolidated fiber preform intended for the manufacture of a part made of composite material, includes shaping a fiber texture in a heated metal mold, the texture being pre-impregnated with a transient or fugitive material, or shaping a fiber texture in a metal mold and injecting a transient or fugitive material into the fiber texture held in shape in the metal mold, cooling the mold, removing the set fiber preform from the mold, coating the fiber preform with a slurry containing a powder of ceramic or carbon particles, heat-treating the coated fiber preform so as to form a porous shell around the fiber preform by consolidation of the slurry and so as to remove the transient or fugitive material present in the fiber preform, consolidating the fiber preform by gas-phase chemical infiltration.

Abstract: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.

Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

Abstract: A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOxFy, YAlxOy, YZrxOy and YZrxAlyOz.

Abstract: A device for synthesising core-shell nanoparticles by laser pyrolysis is provided. The device includes a reactor having a first chamber for synthesising the core, which is provided with an inlet for a core precursor; a second chamber for synthesising the shell, which is provided with an inlet for a shell precursor; and at least one communication channel between the two chambers for transmitting the core of the nanoparticles to be formed in the first chamber towards the second chamber. The device also includes an optical device for illuminating each of the two chambers, and at least one laser capable of emitting a laser beam intended to interact with the precursors in order to form the core and the shell.

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

Abstract: A method of manufacturing polycrystalline silicon rod, wherein a reactor for manufacturing a polycrystalline silicon rod includes gas supply nozzles, and at least one nozzle is a flow rate amplification nozzle having a function that the amount of a silicon deposition raw material gas supplied to the nozzle can be increased.

Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: An analog method of making a patterned flexographic printing plate, the method comprising impressing a flexible patterned substrate into an uncured soft photopolymer plate to form the patterned flexographic printing plate.

Abstract: Methods and apparatus for preparing a protective coating are described. In one example aspect, an apparatus for preparing a protective coating includes a chamber, a substrate positioned within the chamber configured to hold at least a target object, an inlet pipe configured to direct a monomer vapor into the chamber, and one or more electrodes configured to perform a chemical vapor deposition process to produce a multi-layer coating. The chemical vapor deposition process comprises multiple cycles, each cycle comprising a pretreatment phase and a coating phase to produce a layer of the multi-layer coating.

Abstract: Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

Abstract: A print system and a method for detecting and correcting underperforming LEDs in-line of a 3D object printer are disclosed. For example, the print system includes a plurality of printheads arranged in a two-dimensional array, a curing light source, an inline detection and correction (IDC) system, a movable member to hold an object and a test plate and a controller to control movement of the movable member to move the object and the test plate past the array of printheads, to operate the plurality of printheads to eject a marking material onto the object as the object passes the two-dimensional array of printheads, to operate the curing light source apply energy to the test plate and to cure the marking material, and to operate the IDC system to read the test plate to confirm that the curing light source is operating correctly based on a reading of the test plate.

Abstract: OVJP depositors and techniques for using the same are provided, in which the in-substrate plane velocity of the delivery and confinement flows are both nonzero and parallel to each other across the boundary between the two. These configurations provide improved material utilization efficiency and relaxed fly height tolerances, while achieving acceptable printing resolution and feature uniformity.

Abstract: Treatment chamber (C) for a chemical vapor deposition (CVD) reactor, comprising, within a body (B) defining an enclosure (E) under partial vacuum, a system (3) for injecting reactive species with a view to being deposited on a substrate (8) placed on a support element (5), and a thermal control system (2) for regulating the temperature of the injection system (3) or keeping it substantially constant, this thermal control system (2) having an interface zone (ZI) with the injection system (3). The treatment chamber (C) further comprises, in the interface zone (ZI), at least one thermal transfer zone (ZT) that is (i) insulated from the enclosure under partial vacuum (E) by an insulating barrier to the pressure and to the diffusion of contaminating species and (ii) filled with a thermal interface material (10). Application for carrying out CVD depositions, especially pulsed CVD depositions.