Abstract: The device for feeding molten plastic material into a molding cavity (30) includes a melting chamber (20) in which metered solid plastic material is introduced, a sonotrode (10) provided for tightly inserting a portion thereof into said melting chamber (20), causing the plastic material to melt by means of vibration, and relative movement of the sonotrode (10) and melting chamber (20) allows driving the molten plastic material inside a molding cavity (30) communicated with said melting chamber (20), the device including resistance sensors (40) allowing an electronic control device (50) to know the resistance that the plastic material has against the movement of the sonotrode (10).

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

Abstract: An improved process for the preparation of nanostructured metal species-based films in a flame aerosol reactor is provided. The present invention also further provides improved nanostructured photo-watersplitting cells, improved dye sensitized solar cells and improved nanostructured p/n junction solar cells.

Abstract: A method of making a wind turbine blade having at least one pultruded strip of fibrous reinforcing material integrated with a shell of the blade is described. The method comprises the steps of: providing at a first location a feed apparatus for dispensing a pultruded strip of fibrous reinforcing material; supporting a coiled pultruded strip of fibrous reinforcing material for rotation in the feed apparatus; causing the coiled strip to rotate in the feed apparatus at the first location; and feeding a free end of the strip from the feed apparatus in a feed direction towards a second location remote from the first location. An associated feed apparatus for use in the method is also described.

Abstract: Systems for processing a material by submerging the material in a fluid and directing laser pulses at the fluid and the material for processing the material. An embodiment removes the surface of concrete, brick, or rock or minerals in a relatively gentle, energy-efficient, and controlled manner that also confines the material that is removed.

Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A method for making carbon nanotube film includes providing a growth substrate having a first surface and a second surface opposite to the first surface. A catalyst layer is placed on the first surface. The growth substrate and the catalyst layer are placed in a reaction chamber. The carbon source gas and hydrogen are supplied into the reaction chamber at a growth temperature of a plurality of carbon nanotubes. An electric field is applied to the growth substrate, wherein an electric field direction of the electric field is from the first surface to the second surface. After the plurality of carbon nanotubes fly away from the growth substrate, the electric field is stopped applying to the growth substrate, and the carbon source gas and hydrogen are continually supplied into the reaction chamber.

Abstract: A method for producing a building material includes a first step of applying a first ultraviolet-curable paint onto an inorganic material containing a woody reinforcement and incompletely curing the first ultraviolet-curable paint, a second step of applying a second ultraviolet-curable paint and completely curing the second ultraviolet-curable paint, a third step of polishing the completely cured second ultraviolet-curable paint to smoothen a surface of the completely cured second ultraviolet-curable paint, and a fourth step of applying an enamel paint and curing the enamel paint. In the second step, the second ultraviolet-curable paint is applied while the first ultraviolet-curable paint is incompletely cured.

Abstract: The invention relates in particular to a machine (1) for additive manufacturing by the sintering or melting of powder (2) using an energy beam (3) acting on a powder layer (23) in a working zone (4), said machine comprising a device for producing a layer of said powder, said device comprising: means (5) for storing the powder, means (6) for distributing the powder able to travel over the working zone in order to distribute the powder in a layer (23) having a final thickness (24) adapted to additive manufacturing, feeding means (7) able to transfer the powder from the storage means (5) to the distributing means (6), dosing means (8) able to control the quantity of powder transferred from the storage means (5) to the distributing means (6), said machine being characterised in that: the storage means (5) are located above the working zone (4), the feeding means (7) utilise gravity, and the feeding means (7) and the dosing means (8) are able to move with the distributing means (6).

Abstract: The present invention relates to a multichannel head assembly for a three-dimensional modeling apparatus which can improve productivity by simultaneously or synchronously modeling a plurality of three-dimensional shaped objects having the same shape or different shapes, and a three-dimensional modeling apparatus using the same, the present invention comprising: a modeling light source unit for allowing N modeling beams to be incident to a light guide unit; the light guide unit for receiving the N incident modeling beams and having a function of guiding each of the N modeling beams along a predetermined path so as to allow the N modeling beams to be incident to N modeling planes in one-to-one correspondence with each other; and a control unit for controlling driving of the modeling light source unit and driving of the light guide unit to be linked with each other.

Abstract: A film formation time setting method to be implemented when forming silicon-containing films on a plurality of substrates arranged on a rotary table includes a film thickness measuring step of performing a provisional film forming process for a provisional film formation time T×N, provisionally set up based on a cycle time T and a number of cycles N, measuring film thicknesses dN-1 of the silicon-containing films formed on the substrates at an end time of the (N-1)th cycle, measuring film thicknesses dN-1˜N of the silicon-containing films at an intermediate time between the (N-1)th cycle and the Nth cycle, and measuring film thicknesses dN of the silicon-containing films at an end time of the Nth cycle; and a film formation time specifying step of comparing the inter-plane uniformities of the silicon-containing films at the respective times to specify and set a film formation time for achieving an optimal inter-plane uniformity.

Abstract: A method of making a ferrite thin film is provided in which a portion of the iron ions in the ferrite are substituted by ions of at least one other metal. The substituting ions occupy both tetrahedral and octahedral sites in the unit cell of the ferrite crystal. The method includes placing each of a plurality of targets, one at a time, in close proximity to a substrate in a defined sequence; ablating the target thus placed using laser pulses, thereby causing ions from the target to deposit on the substrate; repeating these steps, thereby generating a film; and annealing the film in the presence of oxygen. The plurality of targets, the sequence of their ablation, and the number of laser pulses that each target is subjected to, are selected so as to allow the substituting ions to occupy both tetrahedral and octahedral sites in the unit cell.

Abstract: A system and method for enhancing a diffusion limited CVI/CVD process is provided. The system may densify a porous structure by flowing a reactant gas around the porous structure. A mass flow controller may be configured to pulse the flow rate of the reactant gas around the porous structure. The mass flow controller may pulse the flow rate from a nominal flow rate to a first flow rate. The mass flow controller may pulse the first flow rate back to the nominal flow rate or to a second flow rate. The mass flow controller may pulse the flow rate between the nominal flow rate, the first flow rate, and the second flow rate, as desired.

Abstract: Provided is a chamber system for solid free form fabrication, the chamber system having a deposition chamber, a service chamber and one or more loading/unloading chambers. The chamber system allows for a more efficient and cost effective process to service the deposition apparatus, load holding substrates, and unload workpieces without requiring having to adjust the atmosphere in the deposition chamber.

Abstract: Method for treating a drop of liquid, including: placing a drop (D) of liquid on a support surface (S); applying a time-varying electric field to the drop (D), thus moving a contact line of the drop (D) hence suppressing contact line pinning; and evaporating at least part of the liquid from the drop (D) during the application of the alternating field.

Abstract: A method for depositing a functional material on a substrate is disclosed. A plate having a first surface and a second surface is provided. A layer of light scattering material is applied onto the first surface of the plate, and a layer of reflective material is applied onto the second surface of the plate. After a group of wells has been formed on the second surface of the plate, a layer of light-absorbing material is applied on the second surface of the plate. Next, the wells are partially filled with a functional material. The plate is then irradiated with a pulse of light to heat the light-absorbing material between the bottom of the well and the functional material. This heats the gas in the ullage between the light absorbing material and the functional material to increase the pressure in gas to expel the functional material from the wells onto a receiving substrate.

Abstract: A process for cladding a metal part of an aircraft turbojet, including a plurality of metal portions, using a nozzle for emitting a laser beam, the process including positioning the metal part to be cladded on a turntable; positioning a cover on the turntable; positioning the nozzle in an aperture present in the cover; introducing an inert gas under the cover; and cladding a first portion of the metal part by carrying out operations of: spraying metal powders; emitting the laser beam; and moving the nozzle relative to the first metal portion.

Abstract: A substrate processing apparatus includes: a mounting stand provided with a substrate mounting region in which a workpiece substrate is mounted; a process vessel for defining a process chamber including a first region and a second region through which the substrate mounting region passes in order; a precursor gas supply unit for supplying a precursor gas to the first region; a process gas supply unit for supplying a first gas or a second gas differing from the first gas to the second region; at least one plasma generating unit for generating plasma of the first gas or the second gas in the second region; and a control unit for executing a repetition control of repeating a first operation for supplying the first gas to the second region for a first time and a second operation for supplying the second gas to the second region for a second time.

Abstract: Provided is a line source that can achieve uniform film thickness distribution and also achieve high use efficiency of vapor deposition materials. A line source (10) has slit nozzles (1) having a slit nozzle's length-to-width ratio of 4 to 50, a width of 1 mm to 5 mm, and a depth of 5 mm to 20 mm.