Abstract: A method of providing a copper metallization on a dielectric or semiconductive body, and a dielectric or semiconductive body having a metallization consisting essentially of copper. According to the method, a mixture of copper oxide powder and 0 to 15 weight percent reduction-resistant glass frit is dispersed in an organic vehicle and a solvent to produce a paste. The paste is applied to the body to provide a coating thereon. The coating is dried to remove the solvent, and then the coated body is fired in an oxidizing atmosphere at a temperature below the melting temperature of the glass frit to remove the organic vehicle. Finally, the coated body is fired a second time in an atmosphere which is reducing to the copper oxide but substantially nonreducing to the glass frit. The second firing is at a temperature from 700.degree. to 1050.degree. C. for from 120 to 15 minutes to convert the copper oxide to copper metal.

Abstract: A thin flexible steel mask is provided for use in vacuum depositing high resolution back metal electrodes on the surface of a glass substrate already having deposited thereon front transparent electrodes and a thin-film structure including an electroluminescent layer sandwiched between layers of a dielectric.The spaced filaments provided on the mask for defining the openings through which the metal electrodes are deposited are joined together along the lengths thereof by reinforcing portions which provide for rigidly holding the filaments in the plane of the mask and enable a permanent magnet to retain the filaments of the mask in position flush against the surface of the substrate. After the metal has been deposited a first time through the openings in the mask, the mask is repositioned on the substrate such that the reinforcing portions now lie over the areas already deposited on and uncover the portions of the substrate that have yet to be deposited on.

Abstract: This invention provides an electrode on a heat-resisting and isolating substrate which is low-priced and has a stable character and the manufacturing process therefor. A paste which comprises 0.05 to 40 weight % of a metal material containing silver component of 0.5 to 100 weight % and the remaining weight % of an organic vehicle, is formed on the substrate, and is heated at temperatures of 250.degree. to 900.degree. C. and consequently a metallic particle layer of 0.05 to 2 microns in thickness is formed on the substrate, and then an electrode of nickel and copper of 0.1 to 20 microns in thickness is built up on it by electroless plating.

Abstract: An improvement for a semiconductor laser allows the facet reflectivity to be modified to compensate for the presence of a liquid or transparent solid medium having an index of refraction n.sub.m. A first dielectric coating is disposed on an end-facet of the semiconductor laser and has an index of refraction n.sub.1. A second dielectric coating is disposed on the first dielectric coating and has an index of refraction n.sub.2. The materials of the dielectric coatings are selected such that the fraction n.sub.1 /n.sub.2 =.sqroot.n.sub.m. Thus the problems associated with reductions of laser facet reflectivity due to being in contact with a surrounding medium which optically is very different from air is overcome.

Abstract: Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

Abstract: A method of manufacturing a thin layer detector for integrating solid state dosimeters, in particular for thermoluminescence dosimeters (TLD's), from thermoluminescent powder material, comprising the simultaneous application of high pressure and elevated temperature to the powder layer at selected values (working point) sufficient to cause physico-chemical bonding of the layer with a suitably prepared substrate by plastic flow of the powder grains.

Abstract: Disclosed is an indium-containing semiconductor device which includes an ohmic contact formed by application of successive layers of Au-Sn-Cr-Au. The combination of Sn and Cr layers provides an effective barrier to the diffusion of indium to the surface of the contact so that bonding to the contact is not impeded.

Abstract: A plurality of wafers on which semiconductor films having a uniform thickness and specific resistivity are obtained by a horizontal type low pressure vapor phase deposition system, i.e., a system using a horizontal reaction tube, in which wafers are aligned in parallel and transverse to a longitudinal axis of the tube. A main gas is introduced from a main inlet into the reaction tube and an auxiliary gas including an impurity gas is introduced from an auxiliary inlet into the reaction tube in such a manner that the impurity gas diffuses toward the main inlet along an inner wall of the reaction tube.

Abstract: A method for making a monocrystalline integrated circuit structure is described. The monocrystalline silicon body is provided. There is formed thereon a layered structure of silicon dioxide, polycrystalline silicon and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form an oxide isolation pattern within the monocrystalline silicon body. If it is desired to form a semi-recessed oxide isolation there will be no etching of the monocrystalline silicon body in the openings. Should it be desired to form a full recessed oxide isolation there is etching of the monocrystalline silicon to a desired depth to form a substantially planar top surface of the monocrystalline with the recessed dielectric oxide isolation. The body is then oxidized until the desired oxide isolation pattern penetrates to the desired depth within the silicon body.

Abstract: Disclosed is a method of pretreating a semiconductor wafer so that a solution coating of a positive resist of poly(methacrylic anhydride) can be directly applied to the treated surface. A typical semiconductor wafer of silicon is first precoated with a thin layer of poly(t-butyl methacrylate) and then heated to convert the poly(t-butyl methacrylate) to the anhydride. The thickness of this anhydride-precursor layer is less than about 1,000 Angstroms. Next, there is applied to the surface of the precursor layer a solution of the poly(methacrylic anhydride) dissolved in, for example, dimethylacetamide, dimethylformamide, or N-methylprrolidione. Such solvents, which are not capable of adequately wetting the silicon surface directly, are capable of wetting the precursor layer comprising poly(methacrylic anhydride), thus ensuring a uniform deposit of poly(methacrylic anhydride) upon the treated surface of the wafer.

Abstract: Target holder with mechanical scanning. The device comprises several target supports mounted on a plate, which rotates about an axis and means for displacing the supports relative to the plate, arranged in such a way that the radial displacement increment of a support between two consecutive passages in front of the beam is constant throughout the duration of a sweep between two end positions of the support.Application to ion implantation on a silicon wafer.

Abstract: An improved method of planarizing a level of metallization employs a trench in a smooth-surfaced dielectric and a sequence of etching steps to cut the trench locally down to the substrate, while forming the main metallization pattern at the same time.

Abstract: Reactive gases providing a coating on a substrate by CVD are made to meet in counterflow, in order to ensure, by the turbulence effect, that there is an almost instantaneous mixing of the reagents. The movement of the gases before contact is ensured by two pipes containing baffles, the effect of which is to cause the gases to rotate in opposite directions to one another.

Abstract: A method of treating the surface of a sample of n-type silicon material in preparation for measurements for determining the minority carrier diffusion length of the material by the surface photovoltage method comprises applying a strong oxidizing agent to an appropriately prepared surface of a semiconductor material such as silicon. The oxidizing agent is taken from the group consisting of potassium permanganate [KMnO.sub.4 ], potassium dichromate [K.sub.2 Cr.sub.2 O.sub.7 ], and ammonium dichromate [(NH.sub.4).sub.2 Cr.sub.2 O.sub.7 ]. The surface preparation assures a consistently large surface photovoltage that is stable during the surface photovoltage measurement for minority carrier diffusion length.

Abstract: A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.Various other modifications, adaptations and alterations are of course possible in light of the above teachings. Therefore, it should be understood at this time that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.

Abstract: Methods of and apparatus for coating the glass envelope and predetermined portions of the end caps of a fluorescent lamp with a coating of polymeric material including securing the end caps against displacement, subsequently, preheating the glass envelope and the predetermined portion of the end caps to a first predetermined temperature above the melting point of the polymeric material for a predetermined amount of time; subsequently, masking the electrical connecting pins and all of the end caps except the predetermined portion thereof; subsequently, exposing the glass envelope and the predetermined portion of the end caps to a fluidized bed of powder of the polymeric material for a predetermined amount of time to apply a coating of the powder to the glass envelope and to the predetermined portion of the end caps; subsequently, reheating the glass envelope and the predetermined portion of the end caps to a predetermined temperature above the melting point of the polymeric material and for a predetermined amo

Abstract: Methods of and apparatus for coating the glass envelope and predetermined portions of the end caps of a fluorescent lamp with a coating of polymeric material including securing the end caps against displacement, subsequently, preheating the glass envelope and the predetermined portion of the end caps to a first predetermined temperature above the melting point of the polymeric material for a predetermined amount of time; subsequently, masking the electrical connecting pins and all of the end caps except the predetermined portion thereof; subsequently, exposing the glass envelope and the predetermined portion of the end caps to a fluidized bed of powder of the polymeric material for a predetermined amount of time to apply a coating of the powder to the glass envelope and to the predetermined portion of the end caps; subsequently, reheating the glass envelope and the predetermined portion of the end caps to a predetermined temperature above the melting point of the polymeric material and for a predetermined amo

Abstract: Apparatus is disclosed for accurately aligning a processing device with respect to a predetermined reference location on semiconductor lead frame. The apparatus is especially suitable for use with a plating head for plating the pads of a lead frame. The apparatus includes a drive motor having a precision lead screw for attachment to the processing device to shift the device through a small distance to accurately position the device with respect to the predetermined reference positions on the lead frame. The drive motor is coupled to a rotary encoder which is rotated in response to the movement of a pin positioned to enter a reference hole in the lead frame. As the lead frame is advanced by an indexing device, the pin enters a reference hole in the lead frame near the end of the travel of the lead frame, causing the rod to rotate the encoder and supply a signal which for comparison with a reference signal.

Abstract: An improved method of forming a polycide structure is disclosed. An in-situ doped silicon layer is deposited in the amorphous state by LPCVD at 560.degree.-580.degree. C., a polycrystalline tantalum rich tantalum silicide layer is deposited thereover by LPCVD and the structure annealed to convert the silicon to the polycrystalline state and the tantalum silicide to TaSi.sub.2. The deposition and annealing procedures are carried out sequentially in a single reaction vessel.

Abstract: A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the pressures in the reactor and loading chamber may be reduced. The susceptor has a plurality of recesses to aid placing or scooping the water. Through a transparent wall on the side of the purging space, the susceptor is heated by a lamp unit disposed outside the transparent wall. The loading chamber includes a wafer transport mechanism for charging a wafer into the reactor or discharging a processed wafer from the reactor. An unprocessed wafer is loaded to the loading chamber from a cassette and the processed wafer is unloaded to the cassette. One or a small number of wafers are processed at one time. A uniform film is deposited with a high reproducibility.