Abstract: A process for manufacturing resin-molded semiconductor devices which are sealed in an epoxy resin is carried out without employing a metal mold. In the process, an epoxy resin is deposited on a sub-assembly consisting of a semiconductor pellet brazed to axial leads while turning the sub-assembly with the axial leads as a center so that the epoxy resin is applied to a predetermined shape; then the epoxy resin is heated at an elevated temperature while turning the sub-assembly so that surface portions of the epoxy resin are hardened and the epoxy resin is further heated at an elevated temperature without turning the sub-assembly so that the epoxy resin is completely hardened.

Abstract: A process for forming a desired metal pattern on a substrate which comprises forming a mask of a thermally depolymerizable polymer on the substrate with a pattern of openings complementary to the desired metal pattern, blanket coating the substrate and the mask with a metal, heating to depolymerize the thermally depolymerizable polymer, and removing the thermally depolymerizable polymer and metal thereover in a mild solvent.

Abstract: A vacuum evaporation apparatus for depositing an evaporant as a thin film on a substrate comprises a sealed container including a substrate support for mounting thereon the substrate. A heat medium such as of diphenyl, for example, is filled in the substrate support. The heat medium in the substrate support is supplied with heat by a heater. When heated, the heat medium is vaporized and the vapor gas having absorbed heat of evaporation is moved quickly from a high-temperature region to a low-temperature region. The vapor gas in the low-temperature region is supersaturated and turned into the heat medium liquid. The heat energy born as latent heat by the vapor gas is given off to heat the substrate support uniformly. With this thermosiphon action, the substrate can be heated through the substrate support so as to have a uniform overall temperature distribution for forming a uniformly deposited thin film on the substrate surface.

Abstract: Electron-beam (EB) coating of broad strips with improved film quality, and without undue scattering and deflection of the electron beam at long beam paths is accomplished with a shielding mantle, placed between the EB gun and the evaporation crucible, providing vacuum-tight shielding of the beam path from the coating chamber.

Abstract: A method and apparatus for extending the useful life of an acqueous acid chloride solution that serves as a protective bath for an activator dip bath such as used in electroless copper plating. Means are provided for recirculating the acidic chloride solution over metallic tin to precipitate copper ions from the solution. The precipitated copper is filtered from the solution to extend its useful life.

Abstract: A printed circuit board is made of poly(arylene sulfide) board and a conductive metal deposited on the board by electroless plating. Adhesion between the poly(arylene sulfide) and the conductive metal is improved by allowing the plated poly(arylene sulfide) to age.

Abstract: The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Abstract: The disclosure is directed to improvements in a method of making a solid state light modulator structure for use in an apparatus for generating an image from a video signal. A semiconductor device is provided, the device having an array of spaced charge storage electrodes on a surface thereof. A layer of elastomer material, preferably a silicone gel, is applied over said surface. A plastic pellicle is applied over the elastomer layer. Layers of gold and silver are then successively applied over the pellicle layer.

Abstract: The process and device in accordance with the present invention allow the simple and economic manufacture of printed circuit boards, wherein the metal of the conductors as well as the one covering the hole walls is identical with the metal being etched away from the areas between the conductors.According to this process, a one-or two-sided metal-coated base material is used which, upon production of the hole pattern, is provided in a known manner with a metal layer of desired thickness, covering the surface of the metal foil as well as the hole walls. Subsequently, a masking layer is applied by screen printing a positive image of the desired circuit pattern on the surface(s). In the following process step, the holes are filled with an ink by means of a screen printing stencil. In accordance with one embodiment of the invention, the ink used forms an etch-resistant surface film when drying. Upon etching, the masking layer as well as the surface film and the hole fillings are removed with a suitable solvent.

Abstract: The invention relates to a method of photolithographically treating a substrate, in which a surface of the substrate is treated at least at the area at which it consists of an inorganic material with an organosilicon compound.In order to improve the adhesion of a photolacquer layer to be applied, the organosilicon compound used is a 3-aminopropyl-trialkoxysilane in the form of an aqueous solution.

Abstract: A resin-bonded sand core for high-pressure die casting methods having a first refractory coating, such as of silica, with an inorganic binding agent of colloidal silica and a clay such as kaolin, and a second or top coating of a refractory material containing zircon and an organic binding agent, which combination of these two different coatings enables the bonded sand core to have high pressure and temperature resistance, good washout resistance, freedom from surface penetration, and good shake-out properties.

Abstract: A method of forming an ohmic contact between an amorphous silicon hydride semiconductor and a substrate which includes coating a film of palladium on the substrate and overcoating the palladium with a thin film of amorphous silicon hydride forming a thin palladium silicide layer. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride semiconductor is then coated over the amorphous silicon layer to the desired thickness.

Abstract: The present invention is directed to a process for depositing a thin-film layer of magnetic material onto an insulative dielectric layer of a semiconductor substrate such that the layer of magnetic material completely and permanently adheres to the insulative dielectric layer. A product within the scope of the present invention is prepared by taking a semiconductor substrate, such as a silicon wafer, and through a chemical-vapor deposition process depositing a layer of an insulative dielectric (such as the silicon dioxide or silicon nitride) on the layer, and subsequently depositing a layer of a magnetic material (such as a nickel-iron alloy or a manganese-bismuth alloy) through a sputtering process onto the insulative dielectric layer.

Abstract: A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.

Abstract: Miniature electronic component parts such as capacitors or resistors are end conductively coated by use of a part handling plate having a multiplicity of passageways therethrough with walls coated by resilient material to grip the parts. A bank of pins in a press (a) are used to move the parts in the passageways, (b) are used to load the parts into the passageways through the use of a loading plate housing part receiving openings filled with parts by the use of vibration equipment, and (c) are used to discharge the parts from the passageways into the recesses of an unloading plate. The parts are moved in the passageways first to expose one end to be coated and then second to expose the other end of the parts to be coated.

Abstract: There is disclosed a method of selectively metallizing a ceramic substrate provided with a metallization pattern according by photoresist processing. A first layer of photoresist is blanket deposited over the substrate exposed through a coarse block out mask, and developed in order to protect those areas of the metallization pattern not to be covered with metal. A blanket metal layer is then formed over the entire substrate surface. A second layer of photoresist is deposited, exposed through a customized mask of the metallization pattern, and developed. The exposed metal is etched and the remaining first and second photoresist layers are removed, leaving a coating of metal only at desired locations.The method may be used for the heavy gold deposition over the Engineering change pads used as a standard in multilayer ceramic substrates.

Abstract: An apparatus for performing deposition on a substrate wherein the discharger is disposed in an outwardly protruding portion of the vacuum chamber. The discharger is positioned in this outwardly protruding portion so that it is isolated from the evaporation space and directed away from both the substrate and evaporation space. The discharger comprises a gas introduction tube with a discharge electrode surrounding this tube.

Abstract: The invention relates to a process and apparatus for formation and deposition of thin films on a substrate, in a vacuum, by evaporation of the elements to form a Zn.sub.x Cd.sub.1-x S compound having a preselected fixed ratio of cadmium to zinc, characterized by the evaporation of cadmium and zinc at a rate the ratio of which is proportional to the stoichiometric ratio of those elements in the intended compound and evaporation of sulfur at a rate at least twice the combined rates of cadmium and zinc, and at least twice that required by the stoichiometry of the intended compound.

Abstract: In a film-fabricating apparatus, a reaction chamber and a film-forming chamber which contains a substrate on which a film is deposited are provided. Two chambers are communicated with each other by a communication device which allows for the conduction of activated molecular species grown in the reaction chamber to the film-forming chamber, and prevents light beams emitted during the decomposition of raw gas from being carried into the film-forming chamber. A first cylinder is connected to the reaction chamber, to supply a raw gas to the reaction chamber. An exhausting pump is connected to the film-forming chamber, to decompress the interior of the film-forming chamber. A pair of electrodes, one of which is connected to a power source and the other is grounded, are provided in the reaction chamber, to decompose the raw gas and product activated molecular species.

Abstract: A gang bonding interconnect tape for use in an automatic bonding machine for gang bonding of semiconductive devices is fabricated by depositing a series of electrically insulative support structures, such as rings of epoxy resin, onto a metallic tape, as of copper, there being at least one of said electrically insulative support structures for individual ones of the interconnect lead patterns to be formed in said metallic tape. The side of the metallic tape, opposite to the support structure, is photoetched with a series of interconnect lead patterns with individual ones of said lead patterns being etched in registration with individual ones of said electrically insulative support structures. The individual electrically insulative support structure, preferably in the form of a ring, is located in each of the lead patterns intermediate the central region thereof and the outer region thereof for supporting the individual leads thereof in circumferentially spaced relation.