Abstract: This film deposition equipment is arranged so that metal is evaporated in atmosphere including reactive gas introduced in a vacuum, and pressure variation of the reactive gas caused by the metal evaporation is detected to know and control metal evaporation amount.

Abstract: A magnetic recording medium manufacturing apparatus is comprised of a cooling rotary cylinder can and a small roller, arranged adjacent to each other, and with the small roller being swingable about the central axis of the can. A flexible endless belt is laid over the can and roller and carries a tape-shaped support. A ferromagnetic material, evaporated from an evaporation source disposed below the can and roller, is vacuum-deposited onto the tape-shaped support.

Abstract: In a photochemical vapor deposition apparatus comprising a reaction space, which forms a passage for a photoreactive gas and in which a substrate is to be placed, and a discharge space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical reaction of the photoreactive gas, both the spaces being surrounded by the same vessel, discharging electrodes arranged opposite one another with said discharge space therebetween, and a grid comprising a wire-netting of metal interposed between the discharge space and the reaction space, to which grid is applied a voltage of positive potential.This photochemical vapor deposition apparatus can achieve photochemical vapor deposition with high efficiency, because the diffusion of plasma into the reaction space is interrupted by the grid so that the substrate is permitted to be placed at a position closer to an ultraviolet ray source and ultraviolet rays of larger intensity are applied to the substrate.

Abstract: Hillock formation in a thin film of metal having a high coefficient of thermal expansion on a substrate having a low coefficient of thermal expansion is reduced by patterning the substrate in an area normally free from such pattern, specifically for the purpose of reducing hillocks, prior to formation of the thin metal film, with a bas-relief pattern of lands and valleys, having a depth dimension on the same order of magnitude as the thickness of the film.

Abstract: The present invention is a coating apparatus for temperature-sensitive broad strips or similar substrates. To obtain a high quality of coating, it is necessary to minimize the path of the electron beam (EB) through the vapor cloud, and to keep away backscattered electrons from the evaporating material. According to the invention, this problem is solved by assembling a sector field with a vertical field direction at the deflection system connected with the EB gun, which is followed by a deflection field with a horizontal field direction. The divergent electron beam is guided in lines to the evaporating material by the geometry of the fields.

Abstract: A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.

Abstract: Apparatus for continuous of mixing two reactants in proximity to an object upon which a reaction product is to be coated continuously and uniformly means is provided for maintaining reactants from premature contact. The reactant-feed holes are placed at a distance above the surface to be coated to optimize the combination of manufacturing practicality and the precision with which the holes can be economically formed.

Abstract: Copper is deposited onto a substrate by plating a first layer of copper onto the substrate from an electroless plating bath and plating a second layer of copper onto the first layer of copper from a second and different electroless plating bath. The first and second plating baths differ from each other in at least the cyanide content and oxygen content. The process reduces plating void defects and reduces nodule formation.

Abstract: In a photochemical vapor deposition apparatus, a reaction space in which a substrate is to be placed and a discharge space adjacent to the reaction space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical decomposition reaction of a photoreactive gas, are surrounded by the same vessel, and discharging electrodes are provided in the discharge space so as to be opposite to each other in a first level and a second level, which are different in level in the direction in which the spaces align. The discharging electrode arranged in the first level, which is closer to the reaction space, has such a configuration or arrangement that an ultraviolet ray-passing opening is formed.According to the apparatus, a vapor-deposited film can be formed with high efficiency, because a large quantity of ultraviolet rays can be applied to the substrate without any damage of the vapor-deposited film.

Abstract: A thin amorphous film-forming apparatus comprising a plurality of discharge unit chambers connected in a loop, each provided with a glow discharge generating means and a space for storing a substrate, gas supply and discharge valves are provided between the unit chambers, and means for periodically changing the opening and closing of the valves.

Abstract: New polymeric substrates for the electroless deposition of metal thereon. The substrates of the invention result from the polymerization of liquid mixtures comprising a liquid precursor of a polymer that is relatively susceptible to oxidative attack and a liquid precursor of a polymer that resists oxidation.

Abstract: A reactor for use in a chemical vapor deposition process occurring in a radiant absorption heater system employs a vertical gas flow reaction vessel and a novel substantially solid susceptor configured as a truncated wedge. The susceptor is characterized by a high utilized area, resulting in a high wafer capacity and low power requirement.

Abstract: A process for forming a metal or metal compound coating on a face of a hot vitreous substrate in sheet or ribbon form by continuously advancing the substrate in a downstream direction along a path through a coating station which discharging droplets of liquid coating precursor material in the downstream direction so that such material contacts the substrate at the coating station and continuously withdrawing vapors thereafter from the coating station in the downstream direction an annealing the substrate is characterized in that the hot coated substrate (1) passes from the coating station (3) to an annealing lehr (6) via a re-heating station (4) at which sufficient radiant heat energy is supplied to the hot coated substrate (1) to raise the temperature or the mean temperature of its coated surface at the re-heating station (4) through a certain temperature range, at least the upper end of such range being not less than a temperature 100.degree. C.

Abstract: Multichromatic radiation is applied rapidly to silicon or polysilicon placed in contact with a silicide-forming metal to form metal silicide having low resistivity without deleterious later diffusion of dopants in adjacent single crystal or polysilicon. The radiation is applied to a metal deposited on silicon or to a metal codeposited with or to silicide deposited from a metal-Si composite target. The temperatures preferably rise to between 600.degree. C. and 1200.degree. C. and the total heating periods are less than about one minute, with 10 to 30 seconds being typical.

Abstract: A process for forming a high density solder pad and fan-out metallurgy system in a ceramic substrate wherein a pattern of indented lines is formed in the surface of a green ceramic substrate, the lines filled with a conductive metal paste, a layer of dielectric green ceramic material deposited over at least a portion of the area of the pattern of indented lines, and sintering the resultant substrate.

Abstract: A method of manufacturing a semiconductor device comprises the steps of: forming a thin film on a semiconductor body on which a protruding pattern is formed with the film covering both the sides and the top of the protruding pattern; performing a selective anisotropic etching on the thin film for a distance corresponding to the thin film thickness, thereby removing a portion of the thin film including that portion covering the top of the protruding pattern and leaving a portion of the thin film covering the sides of the protruding pattern, thus forming a thin film pattern surrounding at least a portion of the protruding pattern; etching at least a top part of the protruding pattern while leaving the thin film pattern to extend upwardly from the surface of the semiconductor body; forming a conductive material film covering the semiconductor body including the thin film pattern; and dividing the conductive material film into portions by removing the thin film pattern.

Abstract: Hydrogen annealing permits deposition of good quality polysilicon atop TiO.sub.2. Hydrogen annealing of TiO.sub.2 prevents the tremendous hydrogen affinity of as-deposited TiO.sub.2 from disrupting process reactions during deposition of polysilicon.

Abstract: A motor driven egg lathe, which may be in a self-storing container, and which maintains the functional relationship of the internal elements by embedding them in a cellular polymeric block.

Abstract: A method for electroless copper-plating comprising immersing a surface to be plated in a conventional bath of an alkaline aqueous solution of a cupric salt, a complexing agent for cupric (II) ions and reducing agents which additionally contain an oxide inclusion preventing agent of the formulaR'R"N--R.sub.3 --COOHwherein R' and R" each is hydrogen or alkyl and R.sub.3 and aryl, the amino group and the carboxylic group being in para position with respect to each other. As a consequence of the addition of the agent for preventing oxide inclusions in the copper plating, the latter is provided with high ductility and this confers resistance to heat shock. Preferred embodiments of the agent for preventing oxide inclusions are p-aminobenzoic acid, p-methylaminobenzoic acid, p-dimethylaminobenzoic acid or p-aminosalicylic acid.

Abstract: A simple and highly effective process for preparing the surface and plating a plastic or elastomer material is disclosed by the present invention.A uniform, highly adherent metal layer is deposited by the claimed process. The surface of the materials to be plated is prepared by exposure to a gas etch atmosphere and activation of the etched surface by providing a metal colloid thereon. Another aspect relates to the use of a one-step or two-step conditioner treatment in the process for improved results.After the surface preparation and activation, a desired metal coating can be electroless metal plated in a conventional manner.