Abstract: Process for introducing bath components into electrolytic and currentless (electroless) baths for the deposition of metal for deposition of metal layers, especially for introducing reducing agents in currentless baths, characterized by the bath components being introduced are admixed by an inert gas flowing through the bath.

Abstract: A manufacturing method for an electronic component connected at a lead terminal thereof to electrodes at an element so that the element is coated at the surface with an over-coat resin, which prevents the lead terminal from being unnecessarily coated with the over-coat resin, thereby improving the automatic insertion efficiency of the electronic component with respect to a printed circuit board.An intermediate portion of the lead terminal positioned at the outer peripheral edge of the element is previously applied with a repellent against the over-coat resin, the lead terminal being mounted on the element and thereafter the element being dipped into the over-coat resin, so that the over-coat resin, when coated on the element, is prevented from adhering to the portion of lead terminal applied with the repellent, thereby avoiding creation of running of the over-coat resin at the lead terminal.

Abstract: An electroless plating bath is selectively cleaned of organic contaminants. The organic contaminants are detected by measuring the capacitance between a working electrode and counter electrode with a potentiostat. The capacitance measurements are used to indicate the level of organic contaminants. Exposure of the dummy plating surface in the electroless plating bath is controlled such that the exposed surface is directly proportional to the detected level of organic contaminants.

Abstract: Copper is plated onto a substrate from an electroless plating bath having a mix potential relative to a saturated calomel electrode of about minus 630 to about minus 675 millivolts at a temperature of about 73.degree. C. The mix potential of the bath is monitored and adjusted during the plating to maintain it at about minus 630 to about minus 675 millivolts with respect to a calomel electrode at a temperature of about 73.degree. C. The number of of plating void defects is thereby reduced.

Abstract: A chemical vapor deposition method for making a semiconductor thin film is disclosed, which is characterized in that, in the method wherein semiconductor thin films are allowed to deposit onto the substrates by allowing the susceptor in the shape of polygonal frustum fitted with a plurality of semicondutor substrates to the side faces thereof to rotate in the vertical type reaction tube, by introducing the source gases and the carrier gas into the tube, and by heating the substrates to allow the source gases to react through thermal decomposition, the number of rotations of susceptor is varied in terms of rectangular wave function, trapezoidal wave function or sine wave function and the susceptor is allowed to rotate in converse directions depending on the positive region and the negative region of the function.

Abstract: The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance.In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.

Abstract: A method for fabricating a microstrip resonator line permitting precise control of line width, edge definition and thickness. On a substrate, there is printed a first conductive layer having a precisely controlled width. This first layer has a thickness less than the desired thickness of the resonator line. Further conductive layers are printed over the first layer to build up to the desired thickness of the resonator line based on skin depth requirement at the frequency of operation. Each of the further conductive layers for building the thickness of the line has a width less than that of the first conductive layer so that resonator line width is controlled by the width of the first layer.

Abstract: A silicide layer of a refractory metal for reducing resistance and a nitride layer for preventing diffusion of aluminum are formed on the source and drain regions of an MISFET. The silicide layer is formed in self-alignment with the source and drain regions by two annealings effected at a low temperature and at a high temperature, respectively, and has a low resistance. The nitride layer is formed by directly nitriding the silicide layer.

Abstract: An apparatus is described for the continuous monitoring of a solution such as an electroless nickel plating bath, and the routine adjustment of the bath during use. The apparatus comprises a probe adapted to be placed directly into the plating tank, and controller for means for replenishing nickel ions and other plating additives as they are depleted from the bath. The probe uses a light source for passing a beam of monochromatic light through a portion of the bath and a detector for measuring the intensity of the light. Means are used to prevent air and hydrogen bubbles in the bath from affecting the reliability of the measurements. Additional means are used for cooling of the electronics and the portion of the bath through which the light is directed.

Abstract: A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

Abstract: Chromium is employed as the mask in selective electroless plating of nickel or copper on a substrate. The chromium is applied conveniently by electroplating in the case of conductive substrates or by sputtering in the case of non-conductive substrates.

Abstract: A process and apparatus for LPCVD of thin metallic films is disclosed. The apparatus includes a U-shaped injection tube through which high molecular weight reactants are injected into a reaction chamber. The input and output ends of the U-shaped tube are coupled to a removeable feedthrough plate which, in turn, is coupled to the end cap which seals one end of the reaction chamber. A deposition surface is placed in the chamber through a second end cap at the opposite end of the chamber. The output end of the U-shaped injection tube is coupled to a vacuum pump and the high molecular weight reactant is drawn through the injection tube and dispersed in the reaction chamber through a plurality of holes in the input side of the injection tube.

Abstract: The invention relates to an method of producing a titanium aluminide coating on a substrate by producing a flow of hydrogen and gaseous aluminum monochloride over a titanium surface to react to form a gaseous flow of titanium trichloride and aluminum monochloride and contacting the substrate with the flow of titanium trichloride and aluminum monochloride at a temperature of 800.degree. to 1200.degree. C., said substrate being a temperature below the temperature of the gases.

Abstract: Lumen maintenance and spectral output of fluorescent lamps is improved by applying over the phosphor a vapor deposited film consisting of yttrium oxide and at least one activator. The vapor is generated by electron beam bombardment of the activated yttrium oxide target and the film is most efficacious when applied to a thickness of from about 0.2 microns to about 1.5 microns.

Abstract: A method of forming a large area electronic element, e.g., a large area integrated microelectronic circuit which has at least one dimension in excess of three inches, by forming a film of photoresist separate from a surface to be etched, and thereafter depositing the film of photoresist on the surface to be etched. The deposited photoresist film is then exposed to actinic radiation and developed, and the exposed, underlying surface may thereafter be etched.The method for depositing the photoresist involves passing a viscous liquid composed of photoresist and solvent under positive pressure through a very thin elongated orifice that extends across and in close proximity to (e.g., 0.01 inch or less), but spaced apart from the surface to be processed to form a very thin flexible continuous film of liquid photoresist composition issuing from the orifice.

Abstract: The invention relates to the formation of silicon-containing coatings from the vapor phase thermal decomposition of halosilanes, polyhalodisilanes, polyhalosilanes or mixtures thereof in the presence of a metal catalyst. The instant invention also relates to the formation of silicon- and carbon-containing coatings and silicon- and titanium-containing coatings from the vapor phase thermal decomposition of alkyl halides and titanium halides, respectively, in the presence of a halosilane, polyhalosilane or halodisilane, and a metal catalyst.

Abstract: A method and an apparatus are disclosed which are suitable for applying uniform coatings to integrated circuit (IC) wafers by means of chemical vapor deposition in a process suitable for use in mass production of IC wafers. The process introduces a first group of reactant gases into the vicinity of the wafers through at least one inlet. The number of inlets and the positions of inlets are selected to reduce the total variation in thickness produced on a batch of wafers to within preselected values of variations. The choices of pressure and temperature as well as the choice of gases in the first group are selected to optimize uniformity.

Abstract: A method of applying nickel directly to a non-activated tungsten surface is disclosed, in which the tungsten surface is immersed in an aqueous electroless nickel plating bath containing a water-soluble nickel salt; ethylenediaminetetraacetic acid; hydrazine; and monoethanolamine for a period of time sufficient to deposit a layer of nickel on the tungsten surface.

Abstract: The method consists in clamping the edges of the tape between two jaws of a clamp and in displacing the clamp vertically upwardly. The apparatus includes two vertical columns (10, 11) along which two carriages (12, 13) are capable of moving, with each carriage having a corresponding clamp (14, 15) and means (16, 17, 19, 20) for controlling clamp operation and vertical displacement of the carriages along the columns. Such semiconductor-coated material is suitable for making solar photocells, for example.

Abstract: Method and apparatus for applying a flow of insulating material such as silicone to predetermined locations on printed circuit boards to avoid damaging the components on the circuit boards, such as solenoids and buzzers, whose functions will be impaired by the application of such material thereto. The apparatus is comprised of a pump which delivers a flow of insulating material to a manifold, the manifold having a plurality of lengths of flexible tubing attached thereto which serve as nozzles for dispensing the flow of insulating material. A printed circuit board is mounted on a conveyor and the conveyor is advanced until the printed circuit board is under the manifold, at which time the manifold is lowered to place the nozzles in close proximity to the printed circuit board so that the flow of insulating material will be directed to predetermined locations on the printed circuit board. The flexible nozzles are selectively positioned to direct the flow to those predetermined locations.