Abstract: This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate held to intersect perpendicularly the electric field between the discharging electrodes.

Abstract: The present invention provides a low-pressure CVD apparatus capable of forming a film with improved step coverage and which fills up contact holes without forming any seam therein. The low-pressure CVD apparatus comprises a CVD reaction chamber (6) provided with a source gas inlet (5), a susceptor (1) for supporting a wafer (2), and a gas distributing means (3) disposed between the source gas inlet (5) and a wafer (2) supported on the susceptor (1) to distribute a source gas uniformly over the surface of the wafer (2). The gas distributing means (3) is provided with a plurality of minute pores (16) serving as passages (10a) for the source gas and extending substantially perpendicularly to the surface of the wafer (2).

Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably, a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.

Abstract: A novel vapor phase Si cleaning process comprises simultaneous exposure of the Si surface to a flux of neutral atomic hydrogen and to a flux of ionized particles. The former flux is substantially derived from a plasma, typically a microwave plasma, that is spaced apart from a second plasma, typically a RF plasma, from which the ionized particles are derived. The novel method can be implemented at relatively low cost and facilitates adjustment of the ratio between the two fluxes to result in optimal removal of, e.g., native oxide from the surface.

Abstract: A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber.

Abstract: A magnetron plasma processing apparatus includes a reaction chamber for housing an object to be processed, an electric field generating device, provided in the reaction chamber and having a first electrode for placing the object to be processed thereon and a second electrode opposing the first electrode, for generating an electric field between the first and second electrodes, a magnetic field generating device for generating a magnetic field having a component perpendicular to the electric field, and a device for supplying a reaction gas into the reaction chamber to generate a magnetron plasma by functions of the electric field and the magnetic field. A ring for strengthening the component of the electric field perpendicular to the magnetic field and for increasing the plasma generated at the peripheral portion of the object to be processed is provided to surround the peripheral portion of the object to be processed.

Abstract: Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.

Abstract: A method and apparatus for applying a protective coating onto a substrate comprises a power supply for generating an amplitude-modulated alternating electromagnetic field in a vacuum chamber. A silicon-organic compound is supplied in a gaseous state into the vacuum chamber and is plasma polymerized onto the substrate in the chamber without powdery portions. Another process parameter for controlling coating rate is adjusted to be at a high level so that when the amplitude modulation is stopped, powdery portions do appear in the coating. Thus at high coating rates amplitude-modulation according to the invention avoids such powdery portions.

Abstract: A radio frequency electron cyclotron resonance (RF.multidot.ECR) plasma etching apparatus in which electron cyclotron resonance is caused to occur by radio frequency waves of 100-500 MHz introduced in by an antenna. The antenna is disposed within a plasma-producing chamber and connected to a coaxial cable for introducing the radio frequency waves. A plurality of permanent magnets are provided for producing magnetic fields that perpendicularly intersect electric fields produced around the antenna within the plasma-producing chamber. A process gas forms plasma to the electron cyclotron resonance phenomena resulting from the electric fields generated by the radio frequency waves and the magnetic fields perpendicularly intersecting the electric fields in the plasma-producing chamber. The plasma thus produced is applied to the substrate for etching.

Abstract: A method and apparatus for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.

Abstract: An apparatus for controlling an oscillation output of a magnetron includes a switch circuit controlled of ON/OFF states thereof by a pulse signal, a rectifying circuit for supplying microwave power pulses to the magnetron, and a transformer having a primary side and a secondary side. The primary side has a first terminal and a second terminal, where the first terminal is connected to an A.C. power supply, the second terminal is connected to the switch circuit. The secondary side is connected to the rectifying circuit. The switch circuit is turned ON/OFF by the pulse signal so that a duty factor of the microwave power pulses output from the rectifying circuit and a repetition frequency of the duty cycle thereof become constant.

Abstract: An improved plasma enhanced chemical vapor deposition (CVD) reactor is provided for the synthesis of diamond and other high temperature materials such as boron nitride, boron carbide and ceramics containing oxides, nitrides, carbides and borides, or the like. An aspect of the present method enables a plasma to substrate distance to be optimized for a given surface. This has been found to enable a substantially uniform thin film coating or diamond or lake material to be deposited over a substrate.

Abstract: A cathode chamber (1) with a thermionic cathode (3) generates a low-voltage arc discharge in a vacuum treatment chamber (11). Arcing on wall portions of the treatment chamber (11) is prevented by providing a screen (20), operated so as to be electrically floating, in the region of a diaphragm (9), through which diaphragm (9) the discharge is drawn from the cathode chamber (1) into the treatment chamber (11). The discharge is ignited by impressing portions of the cathode chamber wall with the ignition potential, with respect to the potential of the cathode (3).

Abstract: An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the pedestal isolates the purge cavity from the coating chamber except for the slot. The wafer is heated by a pyrolytic carbon heater in the cavity and purge gas is fed to the purge cavity to flow through the slot and purge coating gas from diffusing into the purge cavity to coat the heater or the edge or backside of the wafer. In an alternative embodiment plural pedestals allow processing of plural wafers in a single cycle, and a vacuum lock and automatic handling devices are provided.

Abstract: A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.

Abstract: A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

Abstract: An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. An enough long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semiconductor layer of a conductivity type which is needed in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

Abstract: An apparatus for the production of coatings in a vacuum, including a rectangular cathode plate and primary and auxiliary anodes, is provided with static and dynamic magnetic stabilizing subsystems. The static stabilizing subsystem comprises linear conductors arranged parallel to the long sides of the cathode plate. The dynamic magnetic stabilizing subsystem includes a series of linear conductors arranged at right angles to the working surface of the cathode plate, activated in sequence. The static and dynamic magnetic stabilizing systems operate to stabilize the electric arc on the working surface of the cathode.

Abstract: An apparatus and a method for producing layers on the surfaces of workpieces, preferably on spotlight, or headlight, reflector inserts formed of plastic, includes an apparatus having a vacuum chamber that can be operated as a batch system with a PCVD coating process, where a microwave ECR plasma coating source is used, and the workpieces to be coated are secured to a rotary cage arranged in the vacuum chamber. The rotary cage can be conducted past a microwave coating source with a frequency-matched and phase-matched planetary motion. Such a coating process can be used in a vacuum chamber, under plasma, and at pressures below 2.times.10.sup.-2 mbar.

Abstract: A diamond-like thin film of good quality is prepared homogeneously and fast in a deposition. A mesh-like acceleration electrode is provided at the opening of a chamber including a filament, and a plasma is generated in the chamber. Because the chamber is isolated electrically from the electric system of the apparatus, the high density and the equilibrium state are maintained, and the plasma density and the potential are homogenized around the mesh-like electrode. In this state, a bias potential is applied to the substrate, and the ions are accelerated according to the potential difference between the plasma and the substrate to deposit a diamond-like thin film on the substrate. Preferably, a negative potential electrode is provided before or around the substrate. Further, an insulating member is provided to surround a flight path of ions between the chamber and the substrate.