Abstract: The exterior surface of a hollow container is treated under the influence of an electric field. The electric field is applied through an electrode and an electrically conductive gas inside the container. The electrically conductive gas conducts a potential from the electrode to the inside surface of the container.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

Abstract: A plasma CVD system has a processing chamber having a thin film forming section, and a transfer section communicating with the thin film forming section through a connecting opening. The system includes a thin film forming device, located in the thin film forming section, for producing plasma to form a thin film on a substrate at the connecting opening, a transfer device, located in the transfer section, for bringing a substrate holding member into and out of the processing chamber, and a heat transfer plate which does not project beyond the edge of the substrate when moved into abutment against a rear face of the substrate held by the substrate holding member to move the substrate from the substrate holding member towards the thin film forming section. The heat transfer plate also conducts heat to the substrate.

Abstract: A vacuum treatment apparatus for workpieces includes an annular treatment chamber having inner and outer surrounding walls and top and bottom walls. A carrier for a multitude of workpieces is provided. The carrier is arranged in a carousel-like manner in the annular treatment chamber. A drive mechanism linked to the carrier, drives the carrier. At least one part of at least one of the walls may be opened to open the annular treatment chamber for charging and discharging. The at least one part is of such an extent so as to allow charging and discharging with a plurality of the multitude of workpieces simultaneously.

Abstract: A plasma etching apparatus provided with a processing chamber adjustable to be highly decompressed. A pair of parallel electrodes are arranged in the processing chamber and semiconductor wafers are placed on the electrodes. High frequency voltage is applied between the paired parallel electrodes to generate electric field of high frequency, perpendicular to the process face of the wafer, in the processing chamber. Etching gas is introduced into the processing chamber and made plasma in it. An electron supply chamber provided with an electron generating filament therein is connected to the processing chamber. Electrons generated in the electron supply chamber are induced into the processing chamber by induction magnetic field and help the etching gas be made plasma.

Abstract: A method of controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surfaces which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature.Apparatus for controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. The apparatus includes a plasma shield having a line-of-sight surface and a plasma target having a target surface.

Abstract: The present invention relates to a method and an apparatus for forming photovoltaic conversion layers and electrode layers with increased efficiency by forming thin film layers under optimal conditions on a belt-like flexible substrate which is transported by means two interacting rollers. Films are formed on the substrate, which remains stationary during film-formation, in film-forming chambers maintained airtight by walls pressed against the substrate via sealing materials. Furthermore, film-forming chamber walls and a ground electrode contacting one side of the substrate are retracted from the substrate surface to facilitate movement of the substrate to a next film-forming position without being damaged. The apparatus of the present invention allows not only the film-forming time and conditions, as well as the size, of each film-forming chamber to be controlled independently, but it also prevents intermingling of gases present in different film-forming chambers.

Abstract: A plasma processing apparatus for ashing semi-conductors wafers has a vertically elongate cylindrical chamber for generating a plasma for processing a workpiece housed therein with heat applied thereto. The cylindrical chamber has upper and lower open ends closed respectively by upper and lower chamber plates. A cooling coil is positioned above the upper chamber plate. A temperature controller actuates a fan unit to force an air flow over the cooling coil to the upper chamber plate for keeping the temperature in the cylindrical chamber within a predetermined range. The plasma processing apparatus includes inner and outer electrodes disposed inside and outside, respectively, of the cylindrical chamber, and a Radio Frequency generator for generating the plasma between the inner and outer electrodes.

Abstract: Apparatus for depositing diamond on a substrate assisted by microwave plasma, comprising two zones, a plasma formation zone located in a waveguide and a diamond deposition zone located outside the waveguide. The apparatus includes means making it possible to form a stable plasma in the deposition zone, so as to considerably increase the substrate surface which can be treated.

Abstract: An improved microwave plasma CVD apparatus for forming a functional deposited film which is provided with a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.

Abstract: A method and apparatus for eliminating radio frequency arcing in a wafer coating plasma process, called PECVD, is disclosed. In the PECVD process, semiconductor wafers are mounted on graphite paddles of a boat assembly held inside a furnace tube. The graphite paddles are arranged in parallel planes and held in a spaced apart relationship by ceramic rods. The present invention spacers have small diameter end portions and are disposed coaxially on the ceramic rods. The spacers support the graphite paddles only on the small diameter end portions, thus separating the graphite paddles from the ceramic rods, as well as simultaneously maintaining the spacing between adjacent graphite paddles on a common ceramic rod. An optional end spacer is disposed on the end of the ceramic rod and is held in place by an optional ceramic nut screwed onto threads formed on the end of the ceramic rod.

Abstract: An apparatus adapted for depositing one or more polymeric materials on the surface of a substrate, which apparatus includes a polymerization chamber; an inlet for admitting a glow discharge polymerization precursor into the polymerization chamber; a first conductive member extending into the polymerization chamber; a first conductive support attached to the first conductive member for holding a substrate; a power generator arranged for transmitting electrical energy to the first conductive member; a second conductive member on or within the polymerization chamber, the second conductive member being spaced and insulated from the first conductive member; and a pump arranged for applying a vacuum to the polymerization chamber; whereby a glow discharge zone is established within the polymerization chamber when a vacuum is applied thereto and electrical energy from the first conductive member is received by the second conductive member.

Abstract: Implantation apparatus for cold cathode plasma immersion ion implantation (C.sup.2 PI.sup.3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.

Abstract: An electron cyclotron resonance apparatus for treating a wafer by plasma generated by utilizing a resonance of electrons. The apparatus is constructed to improve a temperature uniformity of a wafer by injecting helium as a heat transfer medium between the wafer and a wafer pedestal on which the wafer is laid and thereby transferring a heat from the wafer to the wafer pedestal. The apparatus is also constructed to move a desired wafer treating position. As a result, it is possible to fabricate semiconductor devices having a superior performance.

Abstract: A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.

Abstract: A neutral or plasma sound wave is launched into a plasma used within a plasma processing chamber in order to selectively control the location and concentration of plasma constituents, including (1) contaminants; (2) reactants, including ions or molecules; and/or (3) reaction products. The plasma sound wave comprises a periodic waveform controlled to include at least a second harmonic component. Oseen or Oseen-like forces associated with a neutral or plasma sound wave impart a drift velocity to contaminant particles, e.g., micron-sized dust particles, that moves such particles in a desired direction, e.g., away from a wafer or other work surface being processed by the plasma. An analogous Oseen or Oseen-like force associated with a plasma sound wave imparts a drift velocity to the reactants or reaction products in the plasma so as to move such atomic-sized reactants or products in a desired direction, e.g.

Abstract: A cold wall CVD reactor, particularly one for use in depositing TiN in a TiCl.sub.4 +NH.sub.3 reaction, is provided with a metallic liner insert in partially thermally insulated from the reactor wall which serves as one plasma electrode to form a weak secondary plasma when energized along with a second electrode near the vacuum exhaust port of the reactor. The plasma, in cooperation with radiant lamps provided to heat a wafer substrate onto which the primary CVD film is to be applied, heats the liner and a portion of the space adjacent the reactor walls and susceptor surfaces downstream of the reaction volume to cause the formation of deposits to be of the nature that can be removed by plasma cleaning without opening the reactor volume. Deposits such as TiN.sub.x Cl.sub.y and TiN form at temperatures of approximately 200.degree. C. to 650.degree. C., preferably between 300.degree. C. and 450.degree. C., rather than adduct ammonia salts of TiCl.sub.4, which would tend to form at temperatures of 200.degree. C.

Abstract: A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Abstract: A plasma processing apparatus having a pair of electrodes which are installed alternately in parallel in a chamber and in which an object to be processed is placed at one electrode thereof, radiofrequency applying device for applying radiofrequency power between the pair of electrodes, cooling device for cooling the object, drying-gas introducing tube for supplying a drying gas into the chamber, and dropwise-condensation preventing member installed at a portion of the chamber so as to be in contact with the outer atmosphere. The apparatus can prevent dropwise condensation at the time of cooling and at the same time prevent the occurrence of radiofrequency leakage.

Abstract: An apparatus for forming a CVD film on semiconductor wafers includes a process chamber in which a rotary table capable of loading five wafers is provided. The interior of the process chamber is divided into six compartments by radially arranged partitions. The compartments comprise a wafer exchanging room for loading and unloading wafers, a first process room for forming a silicon film on the wafers, a second process room for oxidizing the silicon film into silicon oxide film and three exhaust rooms provided between the wafer exchanging room, the first process room and the second process room. The wafers are processed on the continuously rotating table. As the table is rotated, the wafers are processed in the first and second process rooms and unnecessary products produced in them are successively removed in the exhaust rooms.