Abstract: Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects.

Abstract: The present invention relates to an apparatus for remotely detecting impedance adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first stationary coil having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil to provide a magnetic flux in the air gap. A second coil is mounted for rotation on the polishing table, in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts which are embedded in the surface of the polishing wheel.

Abstract: A chemical vapor deposition apparatus deposits a thin film on a substrate according to a chemical vapor deposition method by using plasma energy and reaction gas. The chemical vapor deposition apparatus comprises at least a reaction tube, a waveguide and a substrate holder. The reaction tube is inserted through the waveguide to thereby form a reaction vessel. The reaction tube is connected with a reaction gas source, and reaction gas is introduced into the reaction tube. The substrate holder is placed at an area in which the reaction tube and the waveguide intersect. The substrate holder provides a rotation axis for rotating the substrate, and the waveguide is provided such that a center axis thereof is inclined in relation to a center axis of the substrate holder. In addition, the substrate holder can be freely rotated around the center axis thereof.

Abstract: A microwave transmitting window for a plasma processing device. The window is a body of one or more pieces of the same or different dielectric materials. A surface of the window facing a microwave transmitting horn or waveguide is planar and extends perpendicularly to an axial direction. An opposite surface of the window is recessed such that the body has a non-uniform thickness between the two surfaces. The recessed surface can have various shapes and the overall size of the window can be equal to the size of a plasma formation chamber of the plasma processing device. The outlet of the plasma formation chamber can be formed in an end wall or the outlet can be formed by the inner periphery of the plasma formation chamber.

Abstract: The present invention relates to an apparatus for producing low resistivity tungsten thin films by a plasma enhanced chemical vapor deposition (PECVD) system. The structure of the invented system comprises the conventional PECVD reactor in which diffuser/electrode and hot plate heated by the hot wire and an apparatus to measure the exact surface temperature of monitoring silicon wafers. In order to control the tungsten deposition temperature exactly, two thermocouples encapsulated within the isolation tube extended to common ground outside the reactor to eliminate rf noise, are inserted into the small cavities made on two monitoring wafers, which ar placed in the surface of hot plate. Using the above mentioned system, the present invention is effective to measure and control the exact surface temperature of the silicon substrate; one of the major factors to produce low resistivity tungsten thin films.

Abstract: An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.

Abstract: A block of dielectric material having a long axis and a short axis and having low losses at a selected microwave frequency and a dielectric constant selected to produce a desired degree of phase modulation is mounted on a rotatable shaft in an orientation perpendicular to the long and short axes and arranged inside a waveguide feeding a CVD reactor containing a plasma species The block is spun by a rotational force applied to the shaft at an angular acceleration such that the two axes of the block successively intersect the axis of the waveguide within the decay period of the plasma species. The frequency of phase modulation can be varied by changing the angular acceleration of the shaft, and the amplitude of the phase modulation can be varied by changing the ratio of block length to thickness and/or by selecting a material with higher dielectric constant. The incident microwave power may be modulated as a function of angular position of the spin shaft.

Abstract: An apparatus for plasma etching or plasma deposition including a housing having a chamber in which a wafer can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber. A radiofrequency energy source is arranged to pass radiofrequency energy into the chamber and induce plasma in the interior of the chamber by activating, with an electric field induced by the radiofrequency energy source, process gas supplied to the chamber through the inlet port. A dielectric window having an inner surface thereof forms part of an inner wall of the chamber. Radiofrequency energy passes from the radiofrequency energy source to the interior of the chamber through the dielectric window. The dielectric window has a thickness which varies at different points along the inner surface thereof such that the thickness is largest at a central portion of the dielectric window.

Abstract: A plasma treating apparatus is useful for coating substrates with thin films having vapor barrier properties at relatively rapid deposition rates. The apparatus comprises an evacuable chamber, an electrically powered electrode defining a plasma-facing surface within the chamber, and a shield spaced a distance .DELTA. transverse to the plasma-facing surface. During plasma treatments, the plasma is confined to within distance .DELTA. while a substrate is continuously fed through the confined plasma.

Abstract: An illuminating apparatus includes a light source section; an integrator section for spreading out and making uniform light generated from the light source; and a collimator lens for making the light which is spread out and made uniform by the integrator section a parallel light flux, wherein the integrator section is formed of a reflecting member for reflecting light generated from the light source section toward the collimator lens.

Abstract: A crucible (9) of a nonmetallic material with an elongated cavity (42) to contain the material to be evaporated has on top a vapor emission slot (45) which is defined at its longitudinal edges (43, 44) by two elongated plates (40, 41) of a likewise nonmetallic material. In the cavity (42) two heating rods (46, 47) are disposed in a mirror-symmetrical relationship to a plane of symmetry (S) through the vapor emission slot (45), one under each of the plates (40, 41) defining the vapor emission slot (45). Additional heating means are provided outside of the crucible and inside of a thermal barrier system.

Abstract: The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil to provide a magnetic flux in the air gap. A second coil is mounted for rotation on the polishing table, in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil.

Abstract: The invention relates to a tape vapor coating apparatus for the production of film webs 50 coated in a vacuum, with a coating chamber for the accommodation and advancement of a film web 50 as well as an evaporation source 19 provided in the housing and having at least one evaporating cell 21, at least one recess 15 being provided in the evaporating cell 21 to accommodate the substance that is to be evaporated. In the recess 15 of the evaporating cell 21 for the accommodation of the substance to be evaporated there is provided an additional, groove-like recess 14.

Abstract: A plasma treatment apparatus for treating strip-stock material, such as tubing, wire, webs, and the like, by moving the strip-stock through a plasma treatment region of the apparatus provides improved consistency of surface treatment if the tension on the material is maintained within a predetermined range.

Abstract: An apparatus and method are provided for surface treating the inside surfaces of hollow or three dimensional plastic objects. While the invention will be described with respect to plastic objects, it will be understood that other objects having a high dielectric strength, such as ceramics, cardboard, paper and wood, may be similarly treated. The surface treating is effected by selectively directing a high voltage plasma field to a selected interior surface of the object to enhance adhesion of various glues, inks and the like. The plasma field is generated in the interior of a tunnel directed into an opening of the hollow portion of the object to be treated. A specially designed electrode is supported from the opening to direct in a controlled manner the field to the selected interior area of the object to be treated. The electrode is supported from a high dielectric shield covering a central area of the opening to direct the plasma field around the shield to a laterally extending electrode below the shield.

Abstract: A vapor phase growth apparatus has a reaction chamber including a suscepter on which a plurality of semiconductor wafers are mounted, a first exhaust unit arranged under the lower portion of the reaction chamber, a second exhaust unit arranged under the first exhaust unit, and a separator provided between the first and second exhaust units so as to be openable and closable. After the reaction chamber and the second exhaust unit are placed in a communicating state with each other by opening the separator, a reaction gas is introduced into the reaction chamber so as to form a film on the wafers. Prior to the next film formation, the second exhaust unit is placed in a non-communicating state with the first exhaust unit to purge the interior of the reaction chamber. Simultaneous with the purging, the deposit on the bottom of the second exhaust unit is removed by supplying to the second exhaust unit a gas for decomposing the deposit.