Abstract: A plasma reaction apparatus has main and auxiliary magnetic field generating coils for generating a magnetic field which has a gradient of no more than 50 gauss/cm in the axial direction and a difference between the axial magnetic field gradient and the magnetic field gradient ten centimeters from the axis of no more than 10 gauss/cm for processing a semiconductor substrate. The plasma reaction apparatus is able to generate a high density, uniform plasma so that the semiconductor substrate is uniformly processed at high speed.

Abstract: Apparatus for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials.

Abstract: An apparatus for and a method of growing thin films of the elemental semiductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and non-stoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF.sub.4), and a hydrocarbon reactant gas, e.g., methane (CH.sub.4), at substrate temperatures between 300 and 650 Celsius. A stepping motor device portion of the apparatus is controlled by a programmable controller portion such that the surfaces of the plurality of substrates are given exposures of at least 10.sup.15 molecules/cm.sup.2 of each of the reactant gases.

Abstract: A plasma reactor for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power by inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions.

Abstract: An oxidation apparatus for applying oxidation treatment to a plurality of semiconductor wafers includes a vertical-type reaction tube in which the wafers are housed, and an outer tube coaxially located outside the reaction tube with a space interposed between them. A heater is located enclosing the outer tube. The space between both of the tubes serves as a passage for pre-heating a treating gas passing through the space. A pipe for supplying the treating gas into the space is connected to the lower portion of the outer tube. A diffusion plate is formed at the top of the reaction tube and it is provided with a plurality of diffusion holes through which the treating gas is introduced into the reaction tube after the gas passes through the space. The space between both of the tubes is partitioned by a spiral pipe made of quartz and the gas pre-heating passage is thus formed spiral extending from the gas supply pipe to the diffusion plate.

Abstract: A plasma treatment apparatus for treating elongated clear polymeric tubing, by moving the tubing through a plasma generation chamber and maintaining tension on the tubing below that at which clarity of the tubing is reduced.

Abstract: An apparatus and method including a current sensor having a radiation emitter, such as an electrical resistor, and a radiation detector, such as an infrared detector, for sensing current flowing to a plasma generating electrode from a radio frequency (RF) power source. The resistor may include a high emissivity infrared coating to enhance efficiency of the current sensor. The infrared detector provides a highly accurate indication of the average or root-mean-square current delivered to the plasma generating electrode without introducing parasitic capacitance into the measurement, or sensing, circuit. A voltage sensor and a second current sensor, such as a torroidal current sensor, provide the voltage and phase angle of the current delivered to the plasma generating electrode to thereby permit calculation of the power delivered to the plasma generating electrode. A processor controls the RF source responsive to the sensed average current, sensed voltage, and sensed phase angle of the current.

Abstract: An igniter for a plasma processing apparatus comprises a hollow, at least partially microwave transmissive, body having a gas inlet and gas outlet passing therethrough. The geometry of the inlet and outlet are selected so that the outlet provides a greater impedance to gas flow than does the inlet. In this manner, there is provided a high pressure region in the igniter in which plasma ignition is facilitated. Ionized species generated in the igniter function to initiate plasma formation externally of the igniter.

Abstract: A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.

Abstract: A low pressure chemical vapor deposition apparatus is provided for removing particulate matter. The apparatus includes a bell jar, a quartz tube installed in the bell jar, a slotted quartz boat installed in the quartz tube and for holding wafers which are to be coated with film. The apparatus further includes a gas line for introducing a reactant gas into the chamber within the quartz tube, where the quartz boat is located, a gas inlet made of quartz, an MFC, a valve 10 a three-zone furnace for heating the quartz tube to a reaction temperature, a pump 4 for pumping out air and reactant gas from the chamber within the quartz tube, a door plate for placing the slotted quartz boat in the chamber a power source device for causing an electric current to charge contacts with a positive or negative bias which are provided on the door plate, and a main controller for operating the power source device.

Abstract: An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

Abstract: Disclosed is a method and apparatus for effecting glow discharge comprising an elongated electrically conductive glow bar electrode, means for applying a potential to the glow bar electrode, thereby generating ions, means for creating a flow of ions from the glow bar electrode to a second electrode, and a shield situated to block partially the flow of ions between the glow bar electrode and the second electrode, said shield having a plurality of apertures through which ions can flow between the glow bar electrode and the second electrode, each aperture having associated therewith at least one shutter, said shutters being capable of at least partially blocking the flow of ions through the apertures, each shutter individually movable to a plurality of positions to adjust the flow of ions through the apertures.

Abstract: An evaporator boat for an apparatus for coating substrates in a vacuum coating chamber consists of a shallow, trough-shaped piece of an electrically conductive material, the boat being heated by direct passage of current through it. The evaporator boat has an elongate hexagonal plan, the configuration of the recess within the boat for containing the material to be evaporated corresponding approximately to that of the boat. Lengthwise opposed ends of the evaporator boat are provided each with an approximately rectangular, perpendicular flat area. The flat areas together form two directly opposed parallel clamping surfaces of the evaporator boat so that when the evaporator boat is heated, two active evaporating zones form on both sides of the point of contact between the delivered wire and the evaporator boat.

Abstract: A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.

Abstract: Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom.

Abstract: An evaporation apparatus includes a vacuum chamber, a vacuum pump for producing a pressure-reduced atmosphere in the vacuum chamber, at least one vacuum evaporation device for evaporating an evaporation material provided in the vacuum chamber, a drum opposed to the vacuum evaporation device and rotating, for cooling a film substrate on which the evaporation material is to be deposited, a supply roller for supplying the film substrate to the drum, a winding roller for winding the film substrate on which the evaporation material has been deposited, a free roller for assisting the winding and travel of the film substrate, a voltage applying device for applying a DC voltage to the film substrate on which the evaporation material has been deposited; and an electric current measuring device for measuring an intensity of electric current flowing between the film substrate on which the evaporation material has been deposited and the ground.

Abstract: An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Abstract: A vacuum tank (1) in which a film is coated under high vacuum is divided by a partition wall (26) into a coating chamber (28) and a winding chamber (27) containing a supply roll (21) and a take-up roll (22). The coating chamber (28) contains an evaporator bank (24). Into the latter a coating cylinder (27) reaches. Diffusion pumps (14, 15) are connected exclusively to the coating chamber (28), so that the high vacuum necessary for the coating need be produced only in this coating chamber (28) and not in the entire vacuum tank (1). An inflatable gasket (32), variable in cross section, seals the partition wall (26) from the vacuum tank wall (1).

Abstract: A bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced.

Abstract: A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree. < .theta. .ltoreq. 90.degree..