Abstract: An apparatus for a reactive treatment of the surface of a workpiece, in which a process gas is brought into a chamber and a direct voltage arc discharge is generated in the chamber, the arc discharge is assisted or maintained, respectively by introducing a flow of charged particles. In known treatment methods, plasma generated in the direct voltage arc are generally distributed non-homogeneously in the inner space of the chamber and the area with a density of the plasma which is sufficient for the reactive surface treatment is relatively small. According to the invention this problem is solved in that the distribution of the effect of the treatment of the plasma in the chamber at least along a predetermined plane is set, and specifically by a distribution of openings for the process gas over a given area and/or by a distribution of the arc discharges in the chamber over a given area. The flow of charged particles enters into the chamber via a plurality of distribution openings.

Abstract: An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

Abstract: The plasma gun assembly of the invention is particularly suitable for coating the inner surfaces of narrow cavities, bores, channels or the like. It essentially comprises a plasma gun head member, a plasma gun shaft member and a connector member. These three units are designed as replaceable modules which can be replaced by the operator of the plasma gun assembly quickly and easily. The plasma gun head member is connected to the plasma gun shaft member by means of only two screws, and the connector member is connected to the plasma gun shaft member by means of only three screws. All channels, conductors and conduits for supplying the media and the electric energy required for the operation of the plasma gun assembly are running in the interior of the plasma gun shaft assembly.

Abstract: The invention provides a film-forming apparatus by a photo-CVD method comprising such essential structural elements as a light inlet in the form of a tube, a film-forming chamber, a light outlet in the form of a tube and a nozzle for feeding a mixture of a reactant and a gas for dilution so that a specific relation exists in the dimensions between the elements.With this structure, the film-forming apparatus by a photo-CVD method prevents the blur of the laser beam-incoming window due to contaminants adhered thereto, thereby enabling the extension of reaction time, increase of the deposition, and formation of a film with uniform thickness, and making the composition of the film closest to the stoichiometric one.

Abstract: The apparatus incorporates a h.f. source (2), a plasma enclosure ( 4 ) having gas supplies, a vacuum pump (50), elements for coupling the source to the plasma enclosure, which is of a non-radiating type and which is shaped like a rectangular parallelepiped with first and second dielectric material faces parallel to the direction of the magnetic field and a third face having a rectangular opening (14) parallel to said field for forming a ribbon-like plasma, a treatment enclosure containing a mobile sample holder (18) communicating via the opening with the plasma enclosure. The coupling means have two linear waveguides (30, 38 ) with a rectangular cross-section oriented in the wave propagation direction and located on either side of the plasma enclosure, a horn (36) for coupling one of the guides to the plasma enclosure, whose cross-section widens in the magnetic field direction, the other guide being provided with a short-circuit (46).

Abstract: An apparatus for producing a non-monocrystalline semiconductor device having two film forming chambers. The apparatus has means for transferring a substrate from one film forming chamber to the other film forming chamber while maintaining the first film forming chamber in a plasma atmosphere.

Abstract: An apparatus for treating substrates, in particular for applying a protective layer to the surface of optical reflectors (17) in a microwave-generated gas-supported plasma (16), which comprises a vacuum bell jar (1, 2), which is preferably of drum-type design and has a gas inlet (6), for receiving the substrates (17) to be treated. The vacuum bell jar has a passage window (7) sealed by a quartz-glass pane (8) or the like, for the microwave energy generated by a generator (11) disposed outside the bell jar (1, 2). The microwave energy is injected into the interior of the bell jar (1, 2) by a microwave aerial (12) adjoining the window (7).

Abstract: To coat several cap-shaped substrates simultaneously in an economical way with the same and high quality, several coating chambers are connected into a cap coating station by a symmetrical gas line system with a common gas generator and by another gas line system with a common vacuum pump. The gas lines have a cross sectional area Q.sub.A (x) and a cross sectional form Q.sub.F (x) which as a function of the distance x from the gas generator or from the vacuum pump are substantially the same. In this way, the same flow conditions are assured in all coating chambers. The gas line systems can be formed by precision pipes or by a stack of solid plates, in which gas ducts are introduced by boring or milling. Several cap coating stations, which are connected by suitable symmetrical gas line systems with a common vacuum pump and a common gas generator, can be combined to form a unit.

Abstract: A chemical vapor deposition apparatus comprising a hot wall reaction tube, one or more reaction gas preheaters, a reaction gas exhaust outlet, and substantially eddy free reaction gas flow control means for passing reaction gases in a substantially laminar flow from a preheater to the exhaust outlet. The gas flow control means includes a tube flange positioned to be in a substantially eddy free relationship with the end of the wafer boat zone, the flange having a curved surface means extending from the end of the wafer boat zone to the outer tube for directing the reaction gas flow out of or into the reaction zone while maintaining the gas in a state of substantially laminar flow. One reaction gas preheater comprises a first heating tube having a removable baffle. A second reaction gas preheater comprises a two wall cylindrical heater with inner surface deformations.

Abstract: An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.

Abstract: Apparatus and process for synthesizing a diamond film of high purity at a high rate. Mixture gas of hydrocarbon gas and hydrogen gas is introduced into an arc discharge to produce a gas plasma. This gas plasma is blown against a substrate to deposit diamond. A plasma current power supply is connected with a third electrode disposed above the substrate to place the third electrode at a positive potential. An electrical current is supplied into the gas plasma from the third electrode. Flow of the electrical current through the plasma promotes the decomposition of the hydrogen and hydrocarbon. A diamond film of high purity can be deposited at a high rate. The invention is characterized in that the substrate is placed at a lower potential than the third electrode or the direction of the electrical current intersects the flow of the gas plasma although the electrical current is passed through the plasma. Therefore, it is unlikely that the accelerated electrons reach the substrate, elevating its temperature.

Abstract: An apparatus (1) for continuous treatment of a material (M) of continuous length with a low temperature plasma of a plasma gas (G) under vacuum. The apparatus (1) includes a plasma treatment chamber (3) having a chamber wall (4) and, in the wall (4), an entrance zone (6) and an exit zone (7) for receiving and discharging the continuous material (M). Evacuating means (48) is operable to establish a vacuum in the chamber (3). Support means (9) advances the continuous material (M) along a path (8) through the chamber (3) and also maintains a vacuum seal at the entrance and exit zones (6,7). The support means (9) includes a backing roller (10) mounted adjacent the entrance and exit zones (6,7), an entrance sealing roller (11) positioned adjacent the entrance zone (6) and an exit sealing roller (13) positioned adjacent the exit zone (7).

Abstract: A film forming method and an apparatus therefor, in which reactant gas and carrier gas set at 10 torr through several atmospheres, much higher than the conventional plasma CVD gas pressure are put in a plasma condition of high density by utilizing standing waves or progressive waves of the microwave in a predetermined space, and then neutral radicals and ions of reactant species based on the reactant gas are guided to a substrate, thereby forming a thin film thereon at high-speed.

Abstract: A rectangular substrate dry etching apparatus which etches a rectangular substrate of a large size with a high degree of accuracy. The dry etching apparatus comprises an etching chamber in which a rectangular substrate to be etched is held in position in the etching chamber, and a plasma generator disposed in the etching chamber for generating a pair of high density plasma bars on the outer sides of and substantially in parallel to a pair of opposing sides of the rectangular substrate in the etching chamber so as to etch the rectangular substrate with diffusion components of the high density plasma bars.

Abstract: A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area.

Abstract: In a method for continuously forming a large area functional deposit film comprising the steps of forming a column-shaped film deposition space with a strip type member being conveyed as the side walls thereof in the longitudinal direction of the strip type member on the way of its continuous conveyance, introducing deposit film formation material gas into the film deposition space through gas supplying means, generating microwave plasma in the film deposition space simultaneously by emitting microwave energy from the microwave applicator means which enables the emission of the microwave energy in the direction parallel to the progressing direction of the microwave, and forming such a deposit film on the surface of the strip type member to form the side walls which are exposed to the microwave plasma, the microwave applicator means is arranged either on one side or on both sides of the both end faces of the column-shaped film deposition space, a microwave transmitting member is arranged on the leading end por

Abstract: A diode parallel-plate plasma CVD system has semiconductor wafers are mounted with each of the front surfaces thereof being downwardly directed. The plasma CVD system includes an insulating wafer holder and conductive upper electrodes each being adapted to cover back surface of the semiconductor wafer, thereby forming a film to reduce internal stress and improve energy efficiency.

Abstract: Disclosed herein is a coaxial feeding-type plasma processing chamber or an opposed electrode-type plasma processing chamber using an Etch-tunnel comprising: a cylindrical treatment chamber having a gas-introducing mechanism and a gas-exhausting mechanism, and equipped with a heating mechanism at the periphery thereof; an external electrode disposed in close contact to the outer periphery of the cylindrical treatment chamber; and a metal cylindrical member disposed coaxially at a predetermined gap to the inner wall of the cylindrical treatment chamber and a having a plurality of small apertures in the side wall thereof,the gas-introducing mechanism being composed of a gas-introducing pipe having a plurality of gas-blowout means and disposed along the longitudinal direction of the cylindrical treatment chamber, and a gas reservoir connected by way of a pipeline; the gas-exhausting mechanism being composed of a gas-exhausting pipe having a plurality of gas-suction apertures and disposed along the longitudinal di

Abstract: In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.

Abstract: A microwave plasma chemical vapor deposition apparatus allows the position of a plasma to be two-dimensionally adjusted in a reaction tube. A second plunger 9 (plunger assembly 8) is disposed on an H plane of a microwave waveguide 2a connected to a microwave oscillator 1 adjacent to an end 2b of the microwave waveguide 2a in facing relationship to a reaction region 7. The plunger 9 is actuated to move the plasma also in a direction perpendicular to the direction of travel of a microwave in the microwave waveguide 2a for two-dimensionally adjusting the position of the plasma. Using the microwave plasma chemical vapor deposition apparatus, a diamond film having a uniform quality and a uniform thickness is formed as on a substrate.