Abstract: Apparatus for plasma activated chemical vapor deposition, the apparatus comprising a microwave-excited plasma reactor with a reaction enclosure (10), a microwave generator (20), a waveguide (21) providing non-resonant coupling, and insertion means (40-54) for inserting at least one flow of a predetermined gaseous mixture into the enclosure; the insertion means comprise, in order: transformation means (40-43) for transforming the state of a precursor of a material to be deposited to bring it to the gaseous state, feed means (41, 42) for feeding a vector gas suitable for being charged with the gaseous precursor to constitute the above-mentioned predetermined gaseous mixture; and injection means (18) for injecting the predetermined gaseous mixture into the enclosure (10) and comprising an externally frustoconical nozzle provided with an injection orifice situated at one end and shaped as a function of the injection orifice and of the column configuration of the plasma formed, said nozzle having means for heating

Abstract: A method and an apparatus for forming a charge neutral ion beam which is useful in producing thin films of material on electrically conductive or non-conductive substrates are provided.

Abstract: A plasma processing apparatus for performing plasma process on a semiconductor or the like draws an electron beam from an electron source plasma and, after acceleration, introduces the electron beam into a reaction chamber where a requisite gas is supplied for performing plasma process on the semiconductor wafer. At least one pair of magnets are provided in the chamber with an electron beam path created therebetween. The electron beam is formed into a sheet-like configuration through a magnetic field created by the at least one pair of magnets. The at least one pair of magnets are positioned in an opposed relation to allow the semiconductor wafer to be subjected at a uniform rate to plasma process.

Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

Abstract: An apparatus for manufacturing a semiconductor device having: a process chamber capable of being evacuated; a coil unit for generating an alternating magnetic field in the process chamber; a conductive partition unit disposed in the process chamber for defining an inner space and generating another alternating magnetic field which cancels a change in the alternating magnetic field generated in the inner space, the partition unit allowing gas to be transported between the inner space and a space outside of the inner space; a pipe for supplying process gas to the process chamber; and a pipe for exhausting gas from said process chamber. The gas supply pipe and gas exhaust pipe have a plurality of openings directed to the inner space. Radicals are efficiently generated by inductively coupled plasma, and efficiently transported by a gas flow into time inner space.

Abstract: Apparatus controls a wafer potential in a plasma system when the plasma is off to keep the wafer slightly negative at all times in order to reduce and eliminate the collection of charged particles on the wafer. The apparatus allows the wafer bias to be reduced to a small negative voltage and then holds that voltage. This greatly reduces the net positive flux to the wafer. A diode and a programmed power supply hold a minimum negative voltage on the back of the wafer electrode when the plasma density is decaying to zero.

Abstract: A microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a plurality of Substrates which includes a substantially enclosed film-forming chamber comprising an outer wall having an end portion thereof provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, The film-forming chamber has a cylindrical discharge space encircled by a plurality of rotatable cylindrical substrate holders. Each of the cylindrical substrate holders has a substrate thereon. The cylindrical substrate holders are concentrically arranged in the film-forming chamber. The film forming chamber is provided with means for evacuating the film-forming chamber and means for supplying a raw material gas into the discharge space. The means for supplying the raw material gas comprises one or more gas feed pipes provided with a plurality of gas liberation holes capable of supplying a raw material gas radiately against each of the substrates.

Abstract: A PECVD coating apparatus includes a vacuum coating chamber for performing a PECVD process. At least one pair of spaced apart electrodes is positioned within the chamber and powered by an electric power supply generator to produce a plasma discharge generating voltage between the electrodes. Gas is fed between the electrodes in the chamber for producing a plasma discharge reaction that, in turn, forms a coating reaction product. A holding member is placed in the chamber for positioning one or more workpieces with their opposite surfaces at equally spaced positions from each of the electrodes of the pair of electrodes. The workpieces are electrically isolated from the chamber through the holding member so that a free floating electrical potential is maintained on the workpieces. As a result, the opposite surfaces of the workpieces are substantially identically coated in the chamber using the PECVD process.

Abstract: A substrate surface is coated with a permeation barrier of inorganic material, which is vaporised from a crucible in a vacuum chamber evacuated to at least 10.sup.-3 mbar and precipitated on the substrate surface. An ionizing electron beam of low energy is thus passed through the gas phase of inorganic material with formation of a plasma, preferably in the direction running approximately parallel to the substrate surface. At least one low voltage electron beam gun with assigned electrode is incorporated in the vacuum chamber between the crucible and the substrate support. The main application is for coating plastic films for the packaging industry.

Abstract: An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

Abstract: A plasma apparatus for forming a diamond-like carbon layer on a magnetic substance including a central columnar electrode; an outer electrode around the central electrode in a coaxial relation such that a discharge space is formed therebetween; a dielectric member located between the central electrode and the outer electrode; a device for introducing a reactive gas containing at least a carbon compound gas from one end of the discharge space; a device for applying a high frequency voltage between the central electrode and the outer electrode to form a plasma of the reactive gas; a device for flowing a shield gas to prevent the plasma from directly contacting ambient air; a substrate located in the vicinity of another end of the discharge space so that a carbon coating is formed on the substrate from the plasma.

Abstract: An etching system for processing a semiconductor wafer has a processing chamber and a load lock chamber. The load lock chamber includes an airtight casing having openings through which the wafer is transferred, and each of the openings is openably and airtightly closed by a gate valve. A transfer arm for carrying the wafer is provided within the casing. A gas supplying system for supplying an inert gas and an exhausting system are connected to the casing. A gas supplying head is connected to the inner end of the gas supplying system, and has an outlet filter which is made of a porous ceramic plate formed into a cylinder. The porous ceramic plate has a multi-layer structure consisting of supporting, intermediate and filtering layers. The average pore diameter of the filtering layer is from 0.8 .mu.m to 0.1 .mu.m, and the porosity thereof is from 10% to 50%.

Abstract: A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

Abstract: The plasma processing system comprises a processing chamber with a processing space therein to contain a substrate. An electrical element is operable to couple electrical energy into the processing space to generate a plasma and is further operable to interrupt the power to the processing space to extinguish the plasma upon completion of the processing. An electrode positioned inside the chamber is electrically coupled to the substrate and to a DC bias power supply which selectively supplies DC power to the electrode to bias the substrate.

Abstract: A device for generating plasma for use in semiconductor fabrication, which includes a first radio frequency excitation source for outputting a first excitation current having a first phase and a first amplitude. The device further includes a second radio frequency excitation source for outputting a second excitation current having a second phase and a second amplitude and a plasma generating element having a first end and a second end for receiving respectively the first excitation current and the second excitation current. Moreover, the inventive device includes a control circuit having a control input for receiving a user-variable signal indicative of a desired phase difference between the first phase and the second phase.

Abstract: A reactive ion etching or magnetically enhanced reactive ion etching system consists of a cathode support structure, a shield structure disposed around the cathode, an insulator disposed between the cathode and the shield structure, and a clamping ring capable of mating with the top edge of the insulator. The insulator has a generally cylindrical shape with a flange that extends outward between the shield structure and the clamping ring. A gap between the clamping ring and the top edge of the insulator is controlled to 20 thousandths of an inch or less to restrict an RF coupling path between the shield and the cathode. In addition, the flange acts to interrupt the plasma conduction path between the shield structure and the cathode. By inhibiting plasma conduction between the shield and the cathode, reactive ion etching systems in accordance with the present invention operate in a higher pressure, higher power regime without arcing or exciting a secondary plasma.

Abstract: A radiofrequency wave apparatus and method which provides a relatively high concentration of reactive species from a plasma for the treatment of a surface particularly of a substrate (31) with a complex geometry in a holder (62) which masks a portion of the substrate. The radiofrequency waves are preferably microwaves or UHF waves. The apparatus and method is particularly useful for rapid plasma assisted chemical vapor deposition of diamond on a portion of the substrate, particularly on surfaces of objects with complex geometries such as a drill (60) or a seal ring (64).

Abstract: Vacuum treatment apparatus including at least two chambers that are linked by a transit opening. A valve body pivotally linked within the opening pivots around a pivot axis that is disposed transversely in the opening. A drive for pivoting the valve body around the pivot axis also provided. The valve body has at least one workpiece carrier to be transported by pivoting the valve body around the pivot axis between the two chambers. An expandable seal arrangement is provided around the opening. The seal arrangement is expandable by pressure of a pressurizing medium, so as to seal the body against the opening in dependency of the pressure of the pressurizing medium.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take pan in the surface reaction.

Abstract: A method and apparatus for coating components such as cutting tools with diamond using a microwave plasma excited gas mixture in a reactor equipped with a bowl-shaped substrate table having a concave inner surface for supporting the components to be coated. The plasma forms a plasma ball during the coating operation and the geometrical shape, configuration and position of the table is adapted to stabilize the plasma and control the shape and position of the plasma in such a way that the outer surface of the plasma conforms substantially to the surfaces of the components to be coated. The table can include a system of channels for optimized gas flow and metallic or ceramic wires or rods to control the shape and position of the plasma as well as yield additional excitation of the gas mixture. The table can include an upper rim which facilitates coupling of the plasma directly to the table. The table can include ledges, rods, compartments and/or holes for supporting the components to be coated.