Patents Examined by Kathleen Duda
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Patent number: 9017930Abstract: According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.Type: GrantFiled: September 20, 2012Date of Patent: April 28, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Patent number: 9005881Abstract: A lithography method of manufacturing integrated circuits is disclosed. A combination photoalignment-photoresist layer is formed on a substrate. A treatment is performed on the combination photoalignment-photoresist layer. The combination photoalignment-photoresist layer is exposed to a predetermined pattern. The combination photoalignment-photoresist layer is developed to form a pattern and expose a portion of the substrate.Type: GrantFiled: November 22, 2013Date of Patent: April 14, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fong-Cheng Lee, Ching-Yu Chang
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Patent number: 8980534Abstract: A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.Type: GrantFiled: January 11, 2013Date of Patent: March 17, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takumi Namiki, Yuriko Shirai, Mai Sugawara
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Patent number: 8980537Abstract: A photolithography method, including the steps of: S1) depositing, on the upper surface of a wafer, a chemically-amplified resist; S2) exposing the resist to a sensitizing radiation through a mask, to generate acid compounds in the exposed regions; S3) heating the resist, to have the acid compounds react with dissolution-inhibiting groups; and S5) developing the resist; and including, after step S3, a step of neutralization, S4, of the acid compounds which have not reacted at step S3.Type: GrantFiled: September 4, 2012Date of Patent: March 17, 2015Assignee: STMicroelectronics (Crolles 2) SASInventor: Benedicte Mortini
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Patent number: 8980540Abstract: A solid-state image sensor is manufactured through a plurality of photolithography processes. The plurality of photolithography processes includes at least one first lithography process including a dividing exposure step of exposing a substrate using a plurality of photomasks, and at least one second lithography process including a non-dividing exposure step of exposing the substrate using one photomask. The at least one first lithography process includes a process for forming a resist pattern to define active regions on the substrate, and a process for forming a resist pattern to define charge accumulation region.Type: GrantFiled: February 21, 2013Date of Patent: March 17, 2015Assignee: Canon Kabushiki KaishaInventor: Hideomi Kumano
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Patent number: 8975010Abstract: A method of forming a resist pattern including: applying a first resist composition containing a base component that exhibits increased solubility in an alkali developing solution and a photobase generator component that generates a base upon exposure to a substrate to form a first resist film; conducting exposure; conducting baking; conducting an alkali development, thereby forming a negative-tone resist pattern; applying a second resist composition containing a second base component that exhibits increased solubility in an alkali developing solution, an acid generator component that generates acid upon exposure and an organic solvent that does not dissolve the negative-tone resist pattern to the substrate having the negative-tone resist pattern formed thereon to form a second resist film; conducting exposure; and conducting an alkali development, thereby forming a resist pattern.Type: GrantFiled: December 18, 2012Date of Patent: March 10, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventor: Masaru Takeshita
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Patent number: 8968990Abstract: A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.Type: GrantFiled: September 13, 2012Date of Patent: March 3, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Jiro Yokoya, Tsuyoshi Nakamura, Hiroaki Shimizu, Hideto Nito
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Patent number: 8968989Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.Type: GrantFiled: November 20, 2012Date of Patent: March 3, 2015Assignee: Brewer Science Inc.Inventors: Tantiboro Ouattara, Carlton Washburn, Vandana Krishnamurthy, Douglas Guerrero, Aline Collin
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Patent number: 8900799Abstract: A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).Type: GrantFiled: August 17, 2012Date of Patent: December 2, 2014Assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.Inventors: Jong-baek Seon, Myung-kwan Ryu, Sang-yoon Lee
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Patent number: 8895235Abstract: Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.Type: GrantFiled: March 1, 2011Date of Patent: November 25, 2014Assignee: National University Corporation Hokkaido UniversityInventors: Kosei Ueno, Hiroaki Misawa
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Patent number: 8895234Abstract: Provided is a method of performing a lithography process. The method includes: exposing, through an immersion lithography process, a photo-sensitive material on a substrate, the immersion lithography process using a fluid for the exposing; thereafter treating the photo-sensitive material with a solution to neutralize quenchers that have diffused into the photo-sensitive material through the liquid, wherein the solution contains a substance that diffuses into the photo-sensitive material at a first rate that is dependent on a second at which the quenchers diffuse into the photo-sensitive material; thereafter removing a portion of the photo-sensitive material; thereafter performing a post-exposure bake to the photo-sensitive material; and developing the photo-sensitive material.Type: GrantFiled: February 6, 2013Date of Patent: November 25, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Vincent Yu
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Patent number: 8895232Abstract: The dimensions of mask patterns, such as pitch-multiplied spacers, are controlled by controlled growth of features in the patterns after they are formed. A pattern of mandrels is formed overlying a semiconductor substrate. Spacers are then formed on sidewalls of the mandrels by depositing a blanket layer of material over the mandrels and preferentially removing spacer material from horizontal surfaces. The mandrels are selectively removed, leaving behind a pattern of freestanding spacers. The spacers comprise a material, such as polysilicon and amorphous silicon, known to increase in size upon being oxidized. The spacers are oxidized and grown to a desired width. The spacers can then be used as a mask to pattern underlying layers and the substrate. Advantageously, because the spacers are grown by oxidation, thinner blanket layers can be deposited over the mandrels, allowing the deposition of more conformal blanket layers and widening the process window for spacer formation.Type: GrantFiled: July 12, 2013Date of Patent: November 25, 2014Assignee: Micron Technology, Inc.Inventors: Mirzafer K. Abatchev, Gurtej Sandhu
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Patent number: 8883405Abstract: According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.Type: GrantFiled: August 27, 2012Date of Patent: November 11, 2014Assignee: Kabushiki Kaisha ToshibaInventor: Eishi Shiobara
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Patent number: 8877430Abstract: Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed.Type: GrantFiled: August 4, 2011Date of Patent: November 4, 2014Assignee: Brewer Science Inc.Inventors: Carlton Ashley Washburn, James E. Lamb, III, Brian A. Smith, Justin Lee Furse, Kang Le Wang
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Patent number: 8871433Abstract: The disclosed method for producing a microstructure can form a complicated three-dimensionally formed microstructure with few steps. A first mask pattern (22) containing a light transmitting section and a light blocking section is disposed along an unexposed photosensitive resin (42), and a second mask pattern (32) containing a light transmitting section and a light blocking section is disposed on the reverse side of the first mask pattern (22) from the photosensitive resin (42).Type: GrantFiled: October 14, 2010Date of Patent: October 28, 2014Assignees: Kyoto University, Kagawa UniversityInventors: Takaaki Suzuki, Hidetoshi Kotera, Isaku Kanno, Daisuke Hiramaru
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Patent number: 8865393Abstract: Disclosed herein are a printed circuit board and a method of manufacturing the same, including: forming a protective layer on which a cover film is stacked on a base substrate; exposing the protective layer on which the cover film is stacked to photosensitize the protective layer and photodegrade the cover film; and developing the photodegraded cover film and the photosensitized protective layer to form an opening exposing a pad unit of a circuit layer which is an outermost layer of the base substrate on the protective layer, whereby the productivity of the printed circuit board can be improved without performing a process of separating a cover film.Type: GrantFiled: August 19, 2011Date of Patent: October 21, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Jo Hong, Chang Sup Ryu, Cheol Ho Choi
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Patent number: 8865395Abstract: A method of forming a resist pattern, comprising: a step of forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of acid and an acid-generator component (B) which generates acid upon exposure; a step of subjecting the resist film to exposure; a step of patterning the resist film by a negative-tone development using a developing solution containing the organic solvent to form a resist pattern; a step of applying a coating material to the resist pattern, thereby forming a coating film; a step of performing a thermal treatment at a temperature lower than the softening point of the resist pattern, thereby heat shrinking the coating film to narrow an interval between the resist pattern; and a step of removing the coating film.Type: GrantFiled: June 6, 2012Date of Patent: October 21, 2014Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Tsuyoshi Nakamura, Kiyoshi Ishikawa
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Patent number: 8846305Abstract: A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.Type: GrantFiled: June 29, 2012Date of Patent: September 30, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Eunsung Kim, Kyoungseon Kim, Jaewoo Nam, Chulho Shin, Shiyong Yi
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Patent number: 8835103Abstract: A photo resist layer includes a first region and a second region. A treatment layer is applied to the photo resist layer.Type: GrantFiled: July 13, 2012Date of Patent: September 16, 2014Assignee: Macronix International Co., Ltd.Inventor: Chin Cheng Yang
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Patent number: 8815496Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.Type: GrantFiled: February 22, 2013Date of Patent: August 26, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Tzu Lu, Kuei Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu