Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

Abstract: A semiconductor laser includes a semiconductor layer including end faces and at least one of the end faces is configured as a light emission end face. The semiconductor layer includes a waveguide and a light window structure region. The waveguide has a first width and is extended between the end faces. The light window structure region includes an opening having a second width greater than the first width arranged along the waveguide and is formed continuously or intermittently from one to another of the end faces.

Abstract: A burst logging system logs and transmits to a local or remote computing system event data related to errors in and or potential failures of laser system components. The system further provides for capturing data at different rates from different sensors, synchronization of data capture associated with system events and the possibility for aggregation of data from multiple systems, which can in turn be leveraged to predict and or remediate future system events.

Abstract: A device for generating laser radiation includes a resonator, an optical assembly, and an adjustment device is provided. The optical assembly includes a movably arranged support element on which optical components are arranged, wherein an optical component is a device for deflecting laser radiation. The device for deflecting laser radiation of the optical assembly is arranged in the beam path of laser radiation generated by the resonator. The adjustment device changes the position of the optical assembly from a first position to another position relative to the resonator, wherein the position of the beam path of laser radiation emanating from the optical assembly in the first position remains unchanged by the adjustment of the optical assembly to the other position relative to the resonator. A corresponding method is also provided.

Abstract: In one aspect, an optical system for delivering light into an optical fiber is disclosed, which comprises a phosphor-converted white light source for generating white light, a red light emitting diode (LED) for generating red light, and a light-delivery system for delivering at least a portion of said white light and said red light into an input port of an optical fiber.

Abstract: A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.

Abstract: Chirped pulse amplification (CPA) systems configured to generate and amplify multi-pulses are described. The nonlinear interaction of pulses can generate a multiple pulse pack with a dense time separation between pulses. Reducing or eliminating the nonlinear interaction can be provided by spectrally and/or temporally splitting pulses in the chirped amplification system.

Abstract: A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second l

Abstract: A semiconductor optical element is configured to emit or absorb light and includes a lower structure that includes a multiple quantum well layer; an upper mesa structure that is disposed on the lower structure; a current injection structure that is disposed on the upper mesa structure, when seen from an optical axis of the emitted or absorbed light, a width of a portion of the current injection structure in contact with the upper mesa structure is smaller than a width of the upper mesa structure, the portion of the current injection structure in contact with the upper mesa structure consisting of InP, and an average refractive index of the upper mesa structure is higher than a refractive index of the InP forming the current injection structure; and an insulating film covering both side surfaces of the upper mesa structure and a part of an upper surface of the upper mesa structure.

Abstract: A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed.

Abstract: A surface-emitting laser, which is a ridge waveguide structure, including: a substrate, a first cladding layer, an active layer, a conductive layer, a second cladding layer; the Bragg gratings is etched on the surface of the ridge waveguide; the two upper electrodes are disposed on both sides of the ridge waveguide; two grooves are formed between the ridge waveguide and each of the two upper electrodes; the first waveguide cladding layer includes one or more current confinement regions; or a buried tunnel junction is formed in the second cladding layer for limiting current. The Bragg gratings comprise two first-order gratings and one second-order grating placed between two first-order gratings.

Abstract: A device and a method to produce an augmented-laser (ATLAS) comprising a bi-stable resistive system (BRS) integrated in series with a semiconductor laser. The laser exhibits reduction/inhibition of the Spontaneous Emission (SE) below lasing threshold by leveraging the abrupt resistance switch of the BRS. The laser system comprises a semiconductor laser and a BRS operating as a reversible switch. The BRS operates in a high resistive state in which a semiconductor laser is below a lasing threshold and emitting in a reduced spontaneous emission regime, and a low resistive state in which a semiconductor laser is above or equal to a lasing threshold and emitting in a stimulated emission regime. The BRS operating as a reversible switch is electrically connected in series across two independent chips or on a single wafer. The BRS is formed using insulator-to-metal transition (IMT) materials or is formed using threshold-switching selectors (TSS).

Abstract: The light source device includes an external resonator type semiconductor laser light source that includes a wavelength conversion element and emits light having a wavelength converted by the wavelength conversion element from a first light emission region and a second light emission region different from the first light emission region, a first optical waveguide and a second optical waveguide that each include an incident surface having a circular shape and emit light from light emission surfaces to a same irradiation surface, a first condensing optical system that condenses a plurality of first light bundle of rays emitted from the first light emission region on the incident surface of the first optical waveguide; and a second condensing optical system that condenses a plurality of second light bundle of rays emitted from the second light emission region on the incident surface of the second optical waveguide.

Abstract: A light source device according to an embodiment is used with a light guide member and a wavelength converting member, and includes a light-emitting element, a light sensor, and a driving unit. The light-emitting element radiates a light beam to be incident on a first end of the light guide member by being supplied with a drive current. The light sensor detects signal light, which has been incident on a second end of the light guide member and transmitted to the first end. The driving unit supplies the drive current to the light-emitting element and controls the drive current based on a result of detection of the signal light.

Abstract: A low-repetition-rate (10-Hz), picosecond (ps) optical parametric generator (OPG) system produces higher energy output levels in a more robust and reliable system than previously available. A picosecond OPG stage is seeded at an idler wavelength with a high-power diode laser and its output at ˜566 nm is amplified in a pulsed dye amplifier (PDA) stage having two dye cells, resulting in signal enhancement by more than three orders of magnitude. The nearly transform-limited beam at ˜566 nm has a pulse width of ˜170 ps with an overall output of ˜2.3 mJ/pulse. A spatial filter between the OPG and PDA stages and a pinhole between the two dye cells improve high output beam quality and enhances coarse and fine wavelength tuning capability.

Abstract: A compact diode laser achieves high-power, short duration output pulses by separating the lasing action from the pulse-generating mechanism. A diode seed source is configured for gain-switching via a variable RF source. A time lens element includes an intensity modulation device, a phase modulation device, and a pulse compressor. The intensity modulation device carves shorter pulses from the long gain-switched seed pulses, the phase modulation device adds chirp, and the pulse compressor compensates for the chirp while producing high-power short-duration output pulses.

Abstract: A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

Abstract: The present application discloses a cavity dumped low repetition rate infrared tunable femtosecond laser source configured to produce pulses of 200 femtoseconds or less with a peak power of four megawatts or more for use in a variety of applications including multi-photon microscopy.

Abstract: A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

Abstract: A monolithic edge emitting semiconductor laser comprising multiple laser diodes using aluminum indium gallium arsenide phosphide AlInGaAs/InGaAsP/InP material system, emitting in long wavelengths (1250 nm to 1720 nm). Each laser diode contains an active region comprising aluminium indium gallium arsenide quantum wells (AlInGaAs QW) and aluminium indium gallium arsenide (AlInGaAs) barriers and connected to the subsequent monolithic laser diode by highly doped, low bandgap and low resistive indium gallium arsenide junction called tunnel junction.