Abstract: A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the dummy conductor patterns (20) is equivalent to a shape with an internal angle larger than 180°.

Abstract: An electronic package that includes a composite material base. In one embodiment the electronic package is an expanded wafer-level package. The composite material base is composed of woven strands and polymer material. In one embodiment the composite material base is composed of woven fiberglass strands and an epoxy material. In various embodiments the package includes an electronic circuitry layer on one or another face of the composite material base. In other embodiments conductive vias connect the circuitry layers, including a redistribution layer. In yet another embodiment an electronic package is mounted on the composite material base and electrically couples to the circuit of the expanded wafer-level package. The package having the composite material base is mechanically stronger and can be made thinner than a package that relies on an encapsulant material for structure, and resists cracking.

Abstract: In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Abstract: A stacked leadframe assembly is disclosed. The stacked leadframe assembly includes a first die having a surface that defines a mounting plane, a first leadframe stacked over and attached to the first die, a second die stacked over and attached to the first leadframe; and a second leadframe stacked over and attached to the second die. The leadframes have die paddles with extended side panels that have attachment surfaces in the mounting plane.

Abstract: There is provided a method of manufacturing a substrate for flip chip, and a substrate for flip chip manufactured using the same. The method includes providing a base substrate including at least one conductive pad, forming a solder resist layer on the base substrate, the solder resist layer including a first opening exposing the conductive pad, forming a dry film on the solder resist layer, the dry film including a second opening connected with the first opening, forming a metal post in the first opening and a part of the second opening, filling the second opening above the metal post with solder paste, forming a solder cap by performing a reflow process on the filled solder paste, planarizing a surface of the solder cap, and removing the dry film. Accordingly, fine pitches and improve reliability can be achieved.

Abstract: A method for manufacturing a multilayer printed wiring board including forming a multilayer printed wiring board structure comprising first and second buildup portions, the first buildup portion including insulating layers, conductor layers and first viaholes electrically connecting the conductor layers through the insulation layers such that the first viaholes are formed in the insulating layers, respectively, the second buildup portion including insulating layers, conductor layers and second viaholes electrically connecting the conductor layers through the insulation layers such that the first viaholes are tapered toward the second viaholes, and the second via holes are tapered toward the first viaholes. The viaholes are formed by plating openings formed after lamination of respective ones of the insulating layers of the buildup portions, and each insulating layer in the buildup portions is about 100 ?m or less in thickness.

Abstract: A microelectronic assembly and related method of forming a through hole extending through a first wafer and a second wafer are provided. The first and second wafer have confronting faces and metallic features at the faces which are joined together to assemble the first and second wafers. A hole can be etched downwardly through the first wafer until a gap is partially exposed between the confronting faces of the first and second wafers. The hole can have a first wall extending in a vertical direction, and a second wall sloping inwardly from the first wall to an inner opening through which the interfacial gap is exposed. Material of the first or second wafers exposed within the hole can then be sputtered such that at least some of the sputtered material deposits onto at least one of the exposed confronting faces of the first and second wafers and provides a wall between the confronting faces.

Abstract: A method for manufacturing a package comprises a first step of forming a metal pattern including a frame and a plurality of leads extending inward from the frame, a second step of molding a resin pattern including a first resin portion which holds the plurality of leads from an inner side thereof, and second resin portions which cover bottom surfaces of peripheral portions, adjacent to portions to be removed, in the plurality of leads while exposing bottom surfaces of the portions to be removed in the plurality of leads, so as to hold the plurality of leads from a lower side thereof, and a third step of cutting the plurality of leads into a plurality of first leads and a plurality of second leads by removing the portions to be removed in the plurality of leads while the resin pattern keeps holding the peripheral portions in the plurality of leads.

Abstract: A semiconductor device has a base substrate with first and second opposing surfaces. A first etch-resistant conductive layer is formed over the first surface of the base substrate. A second etch-resistant conductive layer is formed over the second surface of the base substrate. A first semiconductor die has bumps formed over contact pads on an active surface of the first die. The first die is mounted over a first surface of the first conductive layer. An encapsulant is deposited over the first die and base substrate. A portion of the base substrate is removed to form electrically isolated base leads between opposing portions of the first and second conductive layers. A second semiconductor die is mounted over the encapsulant and a second surface of the first conductive layer between the base leads. A height of the base leads is greater than a thickness of the second die.

Abstract: A method for fabricating chip package includes providing a semiconductor chip with a bonding pad, comprising an adhesion/barrier layer, connected to a pad through an opening in a passivation layer, next adhering the semiconductor chip to a substrate using a glue material, next bonding a wire to the bonding pad and to the substrate, forming a polymer material on the substrate, covering the semiconductor chip and the wire, next forming a lead-free solder ball on the substrate, and then cutting the substrate and polymer material to form a chip package.

Abstract: Interconnects for optoelectronic devices are described. An interconnect may include a stress relief feature. An interconnect may include an L-shaped feature.

Abstract: The present invention relates to a semiconductor structure and a method for making the same. The method includes the following steps: (a) providing a first wafer and a second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the first wafer, so as to form a groove; (d) forming a through via in the groove; and (e) forming at least one electrical connecting element on the first wafer. Therefore, the wafers are penetrated and electrically connected by forming only one conductive via, which leads to a simplified process and a low manufacturing cost.

Abstract: There is provided a semiconductor device including: a circuit board formed by bonding a first and a second metal plates to both surfaces of an insulating substrate respectively, at least one semiconductor element to be bonded to an external surface of the first metal plate through a first solder, and a radiating base plate to be bonded to an external surface of the second metal plate through a second solder, wherein the first and the second solders are constituted by solder materials of the same type, and a ratio of a sum of thicknesses of the first and the second metal plates to a thickness of the insulating substrate is set in a predetermined range to ensure an endurance to a temperature stress of each of the first and the second solders.

Abstract: A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the dummy conductor patterns (20) is equivalent to a shape with an internal angle larger than 180°.

Abstract: A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.

Abstract: A method of manufacture of an integrated circuit package system includes: providing a substrate with a top surface; configuring the top surface to include electrical contacts and an integrated circuit; providing a structure over the substrate with only a honeycomb meshwork of posts contacting the top surface of the substrate; and depositing a material to prevent warpage of the substrate on the top surface of the substrate and over the integrated circuit, the material patterned to have discrete hollow conduits that expose the electrical contacts.

Abstract: A chip package includes a carrier having a first and a second major surface. The first major surface includes an active region surrounded by an inactive region. The chip package includes contact pads in the active region for mating with chip contacts of a chip. A support structure is disposed on the inactive region of the first major surface. The support structure forms a dam that surrounds the active region. When a chip or chip stack is mounted in the active region, spacing exists between the dam and the chip or chip stack. The spacing creates convention paths for heat dissipation.

Abstract: A method of assembling a multi-die package is achieved. A heat spreader is disposed on a printed circuit substrate. At least one integrated circuit die is disposed on a top side of the heat spreader and at least one other integrated circuit die is disposed on a bottom side of the heat spreader wherein the dies are connected to the substrate by wire bonds. Thermal solder balls are electrically connected to solderable pads of the heat spreader through the open holes of the substrate, so as to couple the heat spreader to function as a ground plane. Some of the ground pads of the dies can be bonded onto the heat spreader and the others bonded onto the substrate. Alternatively, all of the dies could only be connected to the substrate by wire bonding, and not connected to the heat spreader.

Abstract: A heat dissipation package structure and method for fabricating the same are disclosed, which includes mounting and electrically connecting a semiconductor chip to a chip carrier through its active surface; mounting a heat dissipation member having a heat dissipation section and a supporting section on the chip carrier such that the semiconductor chip can be received in the space formed by the heat dissipation section and the supporting section, wherein the heat dissipation section has an opening formed corresponding to the semiconductor chip; forming an encapsulant to encapsulate the semiconductor chip, and the heat dissipation member; and thinning the encapsulant to remove the encapsulant formed on the semiconductor chip to expose inactive surface of the semiconductor chip and the top surface of the heat dissipation section from the encapsulant.

Abstract: A semiconductor device includes a semiconductor package, a circuit board, an interconnection electrically connecting the semiconductor package and the circuit board, and a wiring structure. The wiring structure includes a through hole, a contact disposed at the through hole and a lead pattern extending from the contact. The wiring structure is disposed between the semiconductor package and the circuit board. The interconnection passes through the through hole and connects with the contact.