Abstract: Provided is a storage device including a non-volatile memory including a first memory block and a second memory block different from the first memory block, and a memory controller configured to receive, from a host, a first write mode command corresponding to the first memory block and a second write mode command corresponding to the second memory block, control the first memory block to perform a first write operation according to the first write mode command, and control the second memory block to perform a second write operation according to the second write mode command, both the first write operation and the second write operation being sequential write operations.

Abstract: Methods, systems, and devices for transaction management using metadata are described. In some examples, a memory device may include a volatile memory, and a non-volatile memory, which may have different access latencies. The memory device may receive from a host device a read command for data located at an address of the non-volatile memory. In response to the read command, the memory device and may determine whether the data is stored in the volatile memory. The memory device may then transmit, to the host device data and according to an expected latency, a set of data and an indication of whether the set of data was previously requested by the host device or unrequested by the host device. In some examples, the memory device may also transmit an identifier associated with the read command and a hash of the address.

Abstract: A first storage node communicates with at least one second storage node. A physical disk included in the at least one second storage node is mapped as a virtual disk of the first storage node. The method may include: receiving a first write request, where the first write request carries first to-be-written data; striping the first to-be-written data to obtain striped data, and writing the striped data to a physical disk and/or the virtual disk of the first storage node; and recording a write location of the striped data. For example, the technical solution may be applied to a storage system that includes an NVMe SSD.

Abstract: A data storage device includes a memory device including multiple memory blocks corresponding to multiple logical units and a memory controller. The memory controller accesses the memory device and updates content of an activated count table in response to a command issued by a host device. One or more sub-regions to be activated are identified in the command. The activated count table includes a plurality of fields each recording an activated count associated with one sub-region. The memory controller updates content of the activated count table by increasing one or more activated counts associated with the one or more sub-regions identified in the command. The memory controller further selects at least one sub-region according to the content of the activated count table and performs a data rearrangement procedure to move data of the selected at least one sub-region to a first memory space having continuous physical addresses.

Abstract: An initial value of a power cycle count associated with the memory device is identified. The power cycle count is incremented responsive to detecting a powering up of the memory device. Responsive to programming a block residing in the memory device, the block is associated with a current block family associated with the memory device. A currently value of the power cycle count is determined. Responsive to determining that a difference between the initial value of the power cycle count and the current value of the power cycle count satisfies a predefined condition, the current block family is closed.

Abstract: A data storage system can use non-volatile solid state drives (SSDs) to provide backend storage. The data storage system and SSDs can implement log structured systems (LSSs) experiencing write amplification (WA). The aggregated WA of the LSSs can be minimized when the WAs of both LSSs of the system and SSDs are equal, within a specified tolerance. An amount of storage capacity which the LSS of the data storage system is allowed to use can be limited and vary based on the system's data capacity denoting the storage capacity with valid data. Pm can denote a percentage of Cs, the advertised capacity of the SSDs, storing valid data. Po can be a percentage of Cs denoting the upper bound of the system's used capacity. Po and Pm, as well as the utilization and WA of both the data storage system and SSDs, can be evaluated and adjusted adaptively and holistically.

Abstract: In connection with a write operation, a memory controller transmits a first command sequence to a memory chip, thereby causing the memory chip to execute a first-stage program operation that includes a first operation and a first part of a second operation after the first operation, and a second command sequence to the memory chip after the first-stage program operation is executed, thereby causing the memory chip to execute a second-stage program operation that includes a second part of the second operation and no part of the first operation. During the first operation, a program voltage is applied a plurality of times while increasing the program voltage each of the times by a first step size. During the second operation, the program voltage is applied a plurality of times while increasing the program voltage each of the times by a second step size smaller than the first step size.

Abstract: A system can include a memory device and a processing device to perform operations that include performing, at a first frequency, a calibration scan, where the calibration scan includes calibrating block family-to-bin associations for one or more younger voltage bins based on first measurement data determined by the calibration scan, and calibrating block family-to-bin associations for one or more older voltage bins based on second measurement data provided by a media management scan, where the media management scan is performed at a second frequency, such that the second frequency is lower than the first frequency, each of the younger voltage bins satisfies a first age threshold criterion, and each of the older voltage bins satisfies a second age threshold criterion.

Abstract: Systems, apparatuses, and methods related to managing memory objects are discussed. An example method can include monitoring a first characteristic set for each of a plurality of memory objects written to a first memory device or a second memory device; monitoring a second characteristic set for each of the plurality of memory objects; monitoring a performance characteristic set for the first memory device and the second memory device, wherein the first memory device and the second memory device comprise different types of memory media; and writing each of the plurality of memory objects in a particular respective location of the first memory device or the second memory device based, at least in part, upon the first characteristic set, the second characteristic set, and the performance characteristic set.

Abstract: According to one embodiment, a memory system detects a first block in which an elapsed time from a time point at which the block has been filled with write data exceeds a first period. The memory system notifies a host of a list of identifiers capable of identifying valid data portions stored in the first block or a list of identifiers capable of identifying all data portions stored in the first block. When receiving, from the host, a first copy request specifying one or more valid data portions stored in the first block as copy target data and specifying the second block group as a copy destination block group, the memory system copies the one or more valid data portions specified as the copy target data from the first block to the second block group.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a read command specifying an identifier of a logical block and a page number; translate the identifier of the logical block into a physical address of a physical block stored on the memory device, wherein the physical address comprises an identifier of a memory device die; identify, based on block family metadata associated with the memory device, a block family associated with the physical block and the page number; determine a threshold voltage offset associated with the block family and the memory device die; compute a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device die; and read, using the modified threshold voltage, data from a physical page identified by the page number within the physical block.

Abstract: A recording control apparatus configured to access a plurality of recording media, includes a control unit configured to set a temperature threshold of each of first and second recording media, a functional restriction being imposed on the recording medium at the temperature threshold, wherein the control unit is configured to, in recording data read from the first recording medium into the second recording medium, make a first setting for the first recording medium and a second setting for the second recording medium, where the first setting includes setting the temperature threshold of the recording medium at which the functional restriction is imposed on the recording medium to a default value of the recording medium, and the second setting includes setting the temperature threshold of the recording medium at which the functional restriction is imposed on the recording medium to a value greater than the default value of the recording medium.

Abstract: A system includes a memory device and a processing device, operatively coupled to the memory device, the processing device to perform operations comprising: measuring one of a temperature voltage shift or a read bit error rate of fixed data stored in the memory device in response to detecting a power on of the memory device, the fixed data having been programmed in response to detecting a power loss; estimating an amount of time for which the memory device was powered off based on results of the measuring; and in response to the amount of time satisfying a threshold criterion, updating a value for a temporal voltage shift of a block family based on the amount of time.

Abstract: A memory sub-system configured to dynamically determine input/output sizes of write commands based on a media physical layout of a memory sub-system. The memory sub-system can identify, dynamically in response to write commands being selected for execution in media units of the memory sub-system, a portion of a media layout that maps from logical addresses identified by the write commands in the logical address space to physical addresses of memory units in the media units. Based on the media layout, an input/output size for a next write command is identified and transmitted to the host system in a response. The host system generates the next write command and configures the amount of data to be written through the next write command based on based on the input/output size identified in the response.

Abstract: Storage devices include a memory array comprised of a plurality of memory devices. These memory devices are programmed to store data and erased when data is invalidated. Traditional storage devices waited to erase memory devices until new data was ready to write to them in order to avoid baking in the erase state. However, the act of erasing adds time to the overall program cycle and is getting larger as storage device capacity and complexity increases. Because of newer configurations, the threat of baking in erase states is decreased, allowing memory devices within a memory array to be pre-erased prior to writing. This reduces write times and be dynamically implemented in response to one or more changing conditions. Pre-erasing can be accomplished by utilizing a pre-erase list that can indicate pre-erased memory devices and provide them in response to a write command prior to the use of non-erased memory devices.

Abstract: A controller for controlling a memory device is provided to include: a request receiver configured to receive a request including a logical address from a host; a dependency checker configured to acquire the request from the request receiver and check a dependency of the request; a map manager configured to generate a command including a physical address mapped to the logical address of the request in response to a result of checking that the request has no dependency on the prior incomplete request; and a command submitter configured to provide the memory device with the command generated by the map manager, wherein the request receiver, the dependency checker, the map manager and the command submitter are structured to configure a data pipeline such that operations of the request receiver, the dependency checker, the map manager, and the command submitter deliver are performed in series.

Abstract: This disclosure is directed to the problem of paralleling random read access within a reasonably sized block of data for a vector SIMD processor. The invention sets up plural parallel look up tables, moves data from main memory to each plural parallel look up table and then employs a look up table read instruction to simultaneously move data from each parallel look up table to a corresponding part a vector destination register. This enables data processing by vector single instruction multiple data (SIMD) operations. This vector destination register load can be repeated if the tables store more used data. New data can be loaded into the original tables if appropriate. A level one memory is preferably partitioned as part data cache and part directly addressable memory. The look up table memory is stored in the directly addressable memory.

Abstract: A processing device in a memory sub-system determines whether to check a status of one or more memory dies of the memory device and sends a multi-unit status command to the memory device, the multi-unit status command specifying a plurality of memory units associated with the one or more memory dies of the memory device. The processing device further receives a response to the multi-unit status command, the response comprising a multi-bit value comprising a plurality of bits, wherein each bit of the plurality of bits represents a status of one or more parameters of a plurality of parameters for a corresponding one of the plurality of memory units.

Abstract: A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller receives commands from a host, performs logical address to physical address translation (“address translation”) operations for the commands, and instructs the integrated memory assembly to perform one or more operations in support of the command. The control die also includes the ability to perform the address translation. When performing a command from the host, the memory controller can choose to perform the necessary address translation or instruct the control die to perform the address translation. When the control die performs the address translation, the resulting physical address is used by the control die to perform one or more operations in support of the command.

Abstract: According to one embodiment, a memory system checks a first total size indicative of a sum of data lengths specified by first write commands stored in a first submission queue of a host corresponding to a first stream. When the first total size is greater than or equal to a minimum write size, the memory system fetches a set of first write commands stored in the first submission queue, transfers first write data associated with the set of first write commands from a memory of the host to the memory system, and writes the first write data into a first write destination block allocated for the first stream.