Abstract: Provided are a method for transferring a compound semiconductor single crystal thin film layer and a method for preparing a single crystal GaAs—OI composite wafer, including: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate.

Abstract: The invention provides a light-emitting diode grain structure with multiple contact points, including a P-type electrode, a conductive base plate, a light-emitting semiconductor layer, a plurality of ohmic contact metal points, a mesh-structured connection conductive layer, a connection point conductive layer, and an N-type electrode pad electrically connected to the connection point conductive layer. The plurality of ohmic contact metal points is arranged on an N-type semiconductor layer in a spreading manner, and is contacted with the N-type semiconductor layer. No ohmic contact is formed between the connection conductive layer and the N-type semiconductor layer. Accordingly, the metal points and the connection conductive layer can disperse a current, reduce a shading area, and improve the luminous efficiency and component reliability; and uniform light emission from a surface facilitates the light distribution uniformity of an original light source and exciting light after phosphor is coated.

Abstract: A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. Methods of making the semiconductor structures are also described.

Abstract: A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

Abstract: A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising AlxGa1-xAs, a channel comprising InyGa1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising AlzGa1-zAs with 0.1?z?0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

Abstract: Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.

Abstract: A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.

Abstract: A layer transfer process comprises depositing a first, temporary bonding layer of SOG comprising methylsiloxane by spin coating on a surface comprising substantially no silicon of an initial substrate, and applying a first heat treatment for densifying the first, temporary bonding layer. An intermediate substrate is joined to the initial substrate, and then thinned A second bonding layer of SOG comprising silicate or methylsilsesquioxane is deposited by spin coating on a surface of the thinned initial substrate and/or a final substrate, and a second heat treatment is applied for densifying the second bonding layer. The thinned initial substrate and the final substrate and then joined, and the intermediate substrate is detached thereafter. The process may be carried out at temperatures below 300° C. to avoid damaging components that may be present in the substrates.

Abstract: The present application provides a light emitting device, a method for making the same and a display apparatus. The light emitting device includes: a driving backplane; at least one set of driving electrodes disposed on the driving backplane, each set of driving electrodes including a first driving electrode and a second driving electrode; an epitaxial layer located on a side of the at least one set of driving electrodes away from the driving backplane; and at least one set of metal electrodes located on a side of the epitaxial layer close to the driving backplane, each set of metal electrodes including a first metal electrode and a second metal electrode, the first metal electrode and the second metal electrode being respectively connected to a first driving electrode and a second driving electrode, and a filling material being disposed between the first metal electrode and the second metal electrode.

Abstract: A fin field effect transistor (Fin FET) device includes a fin structure extending in a first direction and protruding from an isolation insulating layer disposed over a substrate. The fin structure includes a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. The Fin FET device includes a gate structure covering a portion of the fin structure and extending in a second direction perpendicular to the first direction. The Fin FET device includes a source and a drain. Each of the source and drain includes a stressor layer disposed in recessed portions formed in the fin structure. The stressor layer extends above the recessed portions and applies a stress to a channel layer of the fin structure under the gate structure. The Fin FET device includes a dielectric layer formed in contact with the oxide layer and the stressor layer in the recessed portions.

Abstract: An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.

Abstract: A semiconductor device includes a semiconductor substrate: a vertical Hall element formed in the semiconductor substrate, and having a magnetosensitive portion; a first excitation wiring disposed above the magnetosensitive portion, and configured to apply a first calibration magnetic field (M1) to the magnetosensitive portion; and second excitation wirings disposed above the magnetosensitive portion on one side and on another side of the first excitation wiring, respectively, along the first excitation wiring as viewed in plan view from immediately above a front surface of the semiconductor substrate, and configured to apply second calibration magnetic fields (M2) to the magnetosensitive portion.

Abstract: A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

Abstract: A transistor package comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

Abstract: Structures including non-volatile memory elements and methods of fabricating a structure including non-volatile memory elements. First, second, and third non-volatile memory elements each include a first electrode, a second electrode, and a switching layer between the first electrode and the second electrode. A first bit line is coupled to the first electrode of the first non-volatile memory element and to the first electrode of the second non-volatile memory element. A second bit line is coupled to the first electrode of the third non-volatile memory element.

Abstract: An electronic device is provided. The electronic device includes: a support structure, a heat-dissipation layer, a first adhesive and an electronic panel. The heat-dissipation layer is disposed on the support structure and includes at least one first hole. The first adhesive is disposed in the at least one first hole. The electronic panel is disposed on the heat-dissipation layer.

Abstract: A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.

Abstract: A process for making silicon on insulator wafer by bond and etch back—BESOI. Fluorine ion implantation is performed after bonding and after removal of etch stop layers. The ion energy is chosen to have a peak of ion distribution near the wafer bonding interface. The ion dose is chosen to exceed silicon amorphization threshold at maximum ion distribution. The ion dose is chosen low enough to keep silicon surface crystalline. Solid phase epitaxy SPE is performed after the implant. Finalizing of wafer bonding is performed after the SPE by anneal at 800 C. SPE is performed by anneal where temperature is slow ramped up from 450 to 600 C. In further chipmaking process, defect generation as oxidation induced stacking faults—OISFs—during oxidation step is prevented. OISF are not generated even in metal contaminated wafers. As process does not includes high temperature anneal, RF SOI devices—like front chips of smartphones—made on these wafers have advanced RF performance.

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

Abstract: A semiconductor component is disclosed. The semiconductor component can include: a semiconductor layer injected with a same type of dopant; a gate electrode formed above the semiconductor layer with a gate insulation film positioned in-between; a dielectric layer formed on the semiconductor layer at both sides of the gate electrode; and source/drain electrodes each formed on the dielectric layer.