Abstract: A complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same are provided. An example CMOS image sensor includes first active regions of a semiconductor substrate, where the first active regions are arranged in rows or columns. Photosensitive regions are formed in the first active regions. The CMOS image sensor also includes second active regions of the semiconductor substrate that are interposed between the first active regions. Each of the second active regions includes a device isolation region formed by doping the semiconductor substrate with impurities. Each of the second active regions also includes a channel region of a field effect transistor (FET) that is formed within the device isolation region and is configured to connect source and drain regions of the FET. At least one control gate is formed over each of the second active regions.

Abstract: Provided are an organic light-emitting display device and method of manufacturing the same. An organic light-emitting display device includes: an organic light-emitting unit between two substrates, and an adhesive unit configured to fix the two substrates, the adhesive unit including: a plurality of additives, and at least two regions configured to: suppress infiltration of external moisture into the organic light-emitting unit, and decrease separation of at least one of the two substrates from the adhesive unit caused by the external moisture, and wherein the at least two regions have respective concentrations of the plurality of additives different from each other.

Abstract: A display device includes: a flexible substrate; a display unit on the flexible substrate and configured to display an image; and a compensation layer between the flexible substrate and the display unit.

Abstract: An embodiment concerns selective etching of a structure (e.g., a fin) to form a void with the shape of the original structure. This void then functions as a mold. Flowable dielectric material fills the void to form the same shape as the original structure/mold. Post-processing then occurs (e.g., oxidation build up and annealing) to harden the dielectric in the void. The resulting product is a molded dielectric nanostructure that has the same shape as the original structure but consists of a different material (e.g., dielectric instead of silicon). Other embodiments are described herein.

Abstract: A display device is disclosed. In one aspect, the device includes first and second substrates each including a display area and a non-display area around the display area, a plurality of pixels formed in the display area of the first substrate and an internal circuit unit formed in the non-display area of the first substrate and electrically connected to the pixels. The device further includes a sealing member formed between the non-display areas of the first and second substrates to surround the display areas. The sealing member includes a first portion and a second portion, the second portion surrounded by the first portion and at least partially overlapping the internal circuit unit, and a groove is formed in the second substrate at a position corresponding to the second portion of the sealing member.

Abstract: An organic light emitting device comprises a first and a second electrode, an organic light emitting layer disposed between the first and the second electrode, a hole injection layer adjacent to a first electrode, and a common layer disposed on the hole injection layer, wherein the common layer serves as a hole transporting layer and an electron blocking layer.

Abstract: The organic EL display module includes an organic EL display device having flexibility, a touch panel having flexibility, a first adhesive portion for attaching the organic EL display device and the touch panel to each other, a curved and flexible intermediate housing disposed on an opposite side from the organic EL display device with respect to the touch panel, and a second adhesive portion for attaching the touch panel and the intermediate housing to each other.

Abstract: A light shielding layer (200) is located between a plurality of light-emitting regions (101) when seen in a direction perpendicular to a substrate (100). The light shielding layer (200) includes a light reflection layer (202) and a light absorbing layer (204). The light absorbing layer (204) is located closer to the substrate (100) side in a thickness direction than the light reflection layer (202), and has a light reflectance lower than that of the light reflection layer (202). Further, when seen in the direction perpendicular to the substrate (100), an end of the light reflection layer (202) is located further inside of the light shielding layer (200) than an end of the light absorbing layer (204).

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: Provided are an encapsulation film, an organic electronic device including the same, and a method of manufacturing the organic electronic device. Particularly, the encapsulation film, which effectively blocks moisture or oxygen entering the organic electronic device from the outside, and has excellent mechanical properties such as handleability and processability, and the organic electronic device including the same are provided.

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

Abstract: Provided is an OLED device that includes an adhesive film having a network and a method for fabricating the same. The OLED device includes: a protective layer covering an organic light-emitting element on a substrate; a metal layer on the protective layer; and an adhesive film between the metal layer and the protective layer to attach the metal layer to the protective layer. The adhesive film includes a first adhesive layer composed of first polymers having a network structure, and a second adhesive layer composed of second polymers having a network structure and moisture absorbent. The network structure of the first polymers is bonded with the network structure of the second polymers at an interface between the first adhesive layer and the second adhesive layer.

Abstract: An optoelectronic device which can read magnetically stored information, and convert it into optical light signals using organic or “plastic” semiconductors is described. Such a device may use OLEDs, and may be termed an “organic magneto-optic transducer” (OMOT). An OMOT device can read magnetically stored information, and convert it into optical light signals. The OMOT may provide benefits such as non-volatile storage, flexible films, reduced cost, and operation at room temperature.

Abstract: An organic light-emitting display (OLED) device and a method for manufacturing an OLED device are provided. A thin-film transistor is disposed on a lower substrate. An organic light-emitting element is disposed above the thin-film transistor and includes an anode, an organic light-emitting layer on the anode and a cathode on the organic light-emitting layer. A passivation layer is disposed on the organic light-emitting element and includes hydrogen. The hydrogen absorption layer includes at least one hydrogen absorption layer coming in contact with the top surface and/or the bottom surface of the passivation layer. The OLED device can suppress the performance of the thin-film transistor from degrading by using the hydrogen absorption layer that absorbs residual hydrogen in the passivation layer.

Abstract: A manufacturing method for a light emitting device can include providing a bonding layer over a base, and disposing a shim plate with an opening over the bonding layer. A light emitting body is disposed over the bonding layer exposed from the opening of the shim plate. A lens is formed by approaching a die having a concave portion at its surface, to the shim plate, covering an upper surface of the light emitting body and an upper surface of the shim plate with a lens formation material within the concave portion, and then hardening the lens formation material.

Abstract: Semiconductor devices, image sensors, and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a high dielectric constant (k) insulating material disposed over a workpiece, the high k insulating material having a dielectric constant of greater than about 3.9. A barrier layer is disposed over the high k insulating material. A buffer oxide layer including a porous oxide film is disposed between the high k insulating material and the barrier layer. The porous oxide film has a first porosity, and the barrier layer or the high k insulating material has a second porosity. The first porosity is greater than the second porosity.

Abstract: A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes.

Abstract: An organic light-emitting display device, including a substrate that includes a plurality of first emission portions that realize a first color and a plurality of second emission portions that realize a second color; a pixel-defining film that defines the plurality of first emission portions and the plurality of second emission portions; a plurality of pixel electrodes that are separate from each other and respectively correspond to the plurality of first emission portions; and a first stacked structure that includes an intermediate layer and a counter electrode on the intermediate layer, the intermediate layer including an organic emission layer emitting light of the first color, the first stacked structure further including first emission pattern portions respectively corresponding to the plurality of first emission portions, and first connection pattern portions on the pixel-defining film, the first connection pattern portions connecting the first emission pattern portions.

Abstract: An organic light emitting display device comprises first and second electrodes facing each other on a substrate; and three emission portions arranged between the first electrode and the second electrode, wherein at least one among the three emission portions includes two emitting layers, and the first, second and third emission portions being collectively configured as a TOL-FESE (Thickness of Organic Layers between the First Electrode and the Second Electrode) structure in which thicknesses of organic layers between the first electrode and the second electrode are different from one another, each organic layer having a specified thickness that provides the organic light emitting display device having the TOL-FESE structure with improved red efficiency or blue efficiency and minimized color shift rate with respect to a viewing angle, when compared to an organic light emitting display device that lacks the TOL-FESE structure.