Abstract: A semiconductor package includes a package substrate with a first vent hole, a first semiconductor chip mounted the package substrate, an interposer including supporters on a bottom surface of the interposer and a second vent hole, wherein the supporters contact a top surface of the first semiconductor chip, and the interposer is electrically connected to the package substrate through connection terminals. The semiconductor package further include a second semiconductor chip mounted on the interposer, and a molding layer disposed on the package substrate to cover the first semiconductor chip, the interposer, and the second semiconductor chip.

Abstract: The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of middle interconnectors positioned between the first side of the package structure and the first die and between the first side of the package structure and the second die. The plurality of middle interconnectors respectively includes a middle exterior layer positioned between the first side of the package structure and the interposer structure, a middle interior layer enclosed by the middle exterior layer, and a cavity enclosed by the interposer structure, the package structure, and the middle interior layer.

Abstract: A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, and an inner spacer layer interposing the gate structure and the epitaxial feature. In a top view of the semiconductor device, the inner spacer layer has side portions in physical contact with the gate spacer and a middle portion stacked between the side portions. In a lengthwise direction of the channel members, the middle portion of the inner spacer layer is thicker than the side portions of the inner spacer layer.

Abstract: An electronic device includes a display panel including a first region, a second region, a third region, and a reflection prevention optical layer. A first light emission element is disposed in the first region, a second light emission element is disposed in the second region, and a third light emission element is disposed in the third region. The reflection prevention optical layer includes a first color filter overlapping the first light emission element, a second color filter overlapping the second light emission element, and a third color filter overlapping the third light emission element. The first color filter, the second color filter, and the third color filter transmit light of the same color, and the shape of the first color filter is different from the shape of the second color filter and the shape of the third color filter.

Abstract: Disclosed are semiconductor packages and/or methods of fabricating the same. The semiconductor package comprises a package substrate, a first semiconductor chip mounted on the package substrate, a second semiconductor chip mounted on a top surface of the first semiconductor chip, and a first under-fill layer that fills a space between the package substrate and the first semiconductor chip. The package substrate includes a cavity in the package substrate, and a first vent hole that extends from a top surface of the package substrate and is in fluid communication with the cavity. The first under-fill layer extends along the first vent hole to fill the cavity.

Abstract: An electronic package is provided. The electronic package comprises a substrate having a first side and a second side, the substrate configured to receive one or more electronic components; a first electronic component mounted to the first side of the substrate; a first mold structure extending over at least part of the first side of the substrate; a group of through-mold connections provided on the first side of the substrate, the through-mold connections substantially formed of non-reflowable electrically conductive material; the first mold structure substantially encapsulating the group of through-mold connections; the group of through-mold connections exposed through the first mold structure. An electronic device comprising such an electronic package is also provided. A method of manufacturing such an electronic package is also provided.

Abstract: A novel 3D package configuration is provided by stacking a folded flexible circuit board structure on a package substrate and electrically connected therewith based on the foldable characteristics of the flexible circuit board, and the high temperature resistance of the flexible circuit board which is suitable for insulating layer process, metal layer process, photolithography process, etching and development process, to make conventional semiconductor dies of various functions be bonded on one die and/or two side of a flexible circuit board and electrically connected therewith in advance.

Abstract: A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a favorable lifetime is provided. A light-emitting device with low driving voltage is provided. A light-emitting device with favorable display quality is provided. A light-emitting device that includes an anode, a cathode, and an EL layer positioned between the anode and the cathode, in which the EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer; in which the electron-transport layer contains an electron-transport material and an alkali metal, an alkaline earth metal, a compound of an alkali metal or an alkaline earth metal, or a complex thereof; and in which the resistivity of the hole-injection layer is within a certain range, is provided.

Abstract: An electroluminescent display device includes first and second substrates on which a pixel including first, second, and third sub-pixels are defined, a light-emitting diode disposed at each of the first, second, and third sub-pixels on the first substrate and including a first electrode, a light-emitting layer and a second electrode, and a bank between adjacent sub-pixels along a first direction, wherein the light-emitting layer includes first, second, and third light-emitting layers, wherein each of the first and second light-emitting layers includes first and second light-emitting material layers, and the third light-emitting layer includes a second light-emitting material layer, and wherein a height of the first light-emitting material layer of each of the first and second light-emitting layer increases as it approaches the bank, and the second light-emitting material layers of the first, second, and third light-emitting layers are disposed on top and side surfaces of the bank.

Abstract: Stacked semiconductor device encompasses an upper semiconductor substrate, an upper insulating film laminated on a principal surface of the upper semiconductor substrate, an upper sealing-pattern orbiting along a periphery of the upper insulating film, a lower chip defining a chip mounting area in at least a part of a principal surface, the principal surface is facing to the upper insulating film, and a lower sealing-pattern disposed on the principal surface of the lower chip, delineating a pattern mating to a topology of the upper sealing-pattern, orbiting around the chip mounting area, configured to implement a metallurgical connector by solid-phase diffusion bonding to the upper sealing-pattern. Hermetical sealed space is established in an inside of the chip mounting area, the upper insulating film and the metallurgical connector.

Abstract: Described examples include a method having steps of laying out at least two conductors and modeling conductor current through the at least two conductors to determine a current density in the at least two conductors. The method also has steps of revising the at least two conductors as adjusted conductors to add conductive material to areas of the conductor where the modeling conductor current shows above average current density; fabricating the adjusted conductors; and mounting a die to the adjusted conductors.

Abstract: A package structure includes a package substrate, a first die, a second die, a first underfill, and a second underfill. The first die and a second die are disposed on the package substrate. The first underfill is between the first die and the package substrate, and the first underfill includes a first extension portion extending from a first sidewall of the first die toward the second die. The second underfill is between the second die and the package substrate, and the second underfill includes a second extension portion extending from a second sidewall of the second die toward the first die, the second extension portion overlapping the first extension portion on the package substrate.

Abstract: A semiconductor package includes an antenna structure including an antenna member configured to transmit and receive a signal through the first surface in the dielectric layer, a connection via extending from the antenna member toward the second surface, and a ground member spaced apart from the connection via; a frame surrounding the side surface of the antenna structure; a first encapsulant covering at least a portion of the antenna structure and the frame; a redistribution structure on the second surface and including an insulating layer in contact with the antenna structure and the frame, and a redistribution conductor configured to be electrically connected to the ground member and the connection via in the insulating layer; a first semiconductor chip on the redistribution structure and electrically connected to the antenna member through the redistribution conductor; a second encapsulant encapsulating the first semiconductor chip on the redistribution structure; and a shielding layer surrounding a surfa

Abstract: A chip package includes a redistribution layer, at least one first semiconductor chip, an integrated fan-out package, and an insulating encapsulation. The at least one first semiconductor chip and the integrated fan-out package are electrically connected to the redistribution layer, wherein the at least one first semiconductor chip and the integrated fan-out package are located on a surface of the redistribution layer and electrically communicated to each other through the redistribution layer, and wherein the integrated fan-out package includes at least one second semiconductor chip. The insulating encapsulation encapsulates the at least one first semiconductor chip and the integrated fan-out package.

Abstract: Disclosed is a semiconductor package comprising a semiconductor chip, a redistribution pattern on a bottom surface of the semiconductor chip and coupled to the semiconductor chip, a protection layer that covers a bottom surface of the redistribution pattern, a conductive pattern on a bottom surface of the protection layer and coupled to the redistribution pattern, a buffer pattern in contact with a bottom surface of a first part of the conductive pattern and with the bottom surface of the protection layer, and an under bump pattern on a bottom surface of the second part of the conductive pattern and covering a bottom surface and a side surface of the buffer pattern. The under bump pattern is coupled to the second part of the conductive pattern.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

Abstract: A semiconductor package is disclosed. The semiconductor package may include a substrate, a first semiconductor chip on the substrate, an inner mold layer provided on the substrate to at least partially enclose the first semiconductor chip, an inner shielding layer provided on the substrate to at least partially enclose the inner mold layer, a second semiconductor chip stack on the inner shielding layer, an outer mold layer provided on the substrate to at least partially enclose the inner shielding layer and the second semiconductor chip stack, and an outer shielding layer at least partially enclosing the outer mold layer. Each of the inner and outer shielding layers may include a conductive material, and the inner shielding layer may be electrically connected to a ground pad of the substrate.

Abstract: Provided is a semiconductor package, including a lower semiconductor chip, a plurality of semiconductor chips that are disposed on the lower semiconductor chip in a first direction perpendicular to a top surface of the lower semiconductor chip, a plurality of nonconductive layers disposed between the plurality of semiconductor chips, a nonconductive pattern that extends from the nonconductive layers and is disposed on lateral surfaces of at least one of the plurality of semiconductor chips, a first mold layer disposed a top surface of the nonconductive pattern, and a second mold layer disposed a lateral surface of the nonconductive pattern and a lateral surface of the first mold layer, wherein the nonconductive pattern and the first mold layer are disposed between the second mold layer and lateral surfaces of the plurality of semiconductor chips.

Abstract: A pixel with a color-agnostic repair site includes a pixel controller, a first site for a first light emitter electrically connected to the pixel controller with a first wire, a second site for a second light emitter electrically connected to the pixel controller with a second wire different from the first wire, and a repair site for a repair light emitter. A repair wire can independently electrically connect the repair site to the pixel controller. A repair wire can electrically connect the repair site to the first wire or to the second wire with a jumper. The repair site can electrically connect to the first wire or to the second wire. A first repair wire can electrically connect the repair site to the first wire, a second repair wire can electrically connect the repair site to the second wire, and one of these wires can be cut.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first integrated chip (IC) tier and a second IC tier. The second IC tier comprises a second plurality of conductors within a second insulating structure disposed on the second semiconductor body. A conductive pad is electrically coupled to the second plurality of conductors and has a conductive surface available to a side of the second semiconductor body facing away from the first semiconductor body. The IC first tier contacts the second IC tier along a bonding interface including one or more conductive regions and one or more insulating regions. The one or more conductive regions laterally outside of a bottom surface of the conductive pad.