Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

Abstract: In an n-type current diffusion region, a first p+-type region underlying a bottom of a trench (gate trench) is provided. In the n-type current diffusion region, a second p+-type region is provided between adjacent trenches, separated from the first p+-type region and in contact with the p-type base region. In the p-type base region, near a side wall of the trench, a third p+-type region is provided a predetermined distance from the side wall of the trench and is separated from the first and the second p+-type regions. The third p+-type region extends in a depth direction, substantially parallel to the side wall of the trench. A drain-side end of the third p+-type region is in contact with the n-type current diffusion region or protrudes a predetermined depth from the interface of the p-type base region and the n-type current diffusion region toward the drain.

Abstract: Techniques regarding a vertical nanofluidic channel array are provided. For example, one or more embodiments described herein can regard an apparatus that can comprise a semiconductor substrate and a dielectric layer adjacent to the semiconductor substrate. The dielectric layer can comprise a first nanofluidic channel and a second nanofluidic channel. The second nanofluidic channel can be located between the first nanofluidic channel and the semiconductor substrate.

Abstract: A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.

Abstract: A method of forming a gate structure with a modified gate geometry, including, forming two gate spacers and a dummy gate fill on a channel, wherein the dummy gate fill is between the two gate spacers, forming a stressed layer on the two gate spacers, wherein the stressed layer is on the surfaces of the gate spacers opposite the dummy gate fill, and wherein the stressed layer applies a tensile stress to the two gate spacers, and removing a portion of the dummy gate fill, wherein the tensile stress applied to the two gate spacers is no longer balanced by the dummy gate fill, such that each of the two gate spacers becomes inclined at an obtuse angle relative to a top surface of the remaining dummy gate fill.

Abstract: A chip package includes a redistribution layer, at least one first semiconductor chip, an integrated fan-out package, and an insulating encapsulation. The at least one first semiconductor chip and the integrated fan-out package are electrically connected to the redistribution layer, wherein the at least one first semiconductor chip and the integrated fan-out package are located on a surface of the redistribution layer and electrically communicated to each other through the redistribution layer, and wherein the integrated fan-out package includes at least one second semiconductor chip. The insulating encapsulation encapsulates the at least one first semiconductor chip and the integrated fan-out package.

Abstract: Body-bias voltage routing structures. In an embodiment, doped well structures distribute body biasing voltages to a plurality of body biasing wells of an integrated circuit.

Abstract: Provided is an adhesive for semiconductor mounting that can achieve high-precision gap control and can increase heat resistance when a semiconductor is mounted. An adhesive for semiconductor mounting according to the present invention is an adhesive that is used for mounting a semiconductor, and contains a silicone resin and a spacer, the content of the spacer being 0.1% by weight or more and 5% by weight or less in 100% by weight of the adhesive, the 10% compressive elasticity modulus of the spacer being 5000 N/mm2 or more and 15000 N/mm2 or less, and the average particle diameter of the spacer being 10 ?m or more and 200 ?m or less.

Abstract: An interconnection structure and method of forming the same are disclosed. A substrate is provided. A patterned layer is formed on the substrate and having at least a trench formed therein. A first dielectric layer is then formed on the patterned layer and sealing an air gap in the trench. Subsequently, a second dielectric layer is formed on the first dielectric layer and completely covering the patterned layer and the air gap. A curing process is then performed to the first dielectric layer and the second dielectric layer. A volume of the air gap is increased after the curing process.

Abstract: Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Abstract: A semiconductor device includes a multilayer wiring structure on a substrate. The multilayer wiring structure includes: a top wiring; a fuse element, which is located on a lower layer-side of the top wiring, and is made of metal having a melting point that is higher than that of the top wiring; and a lower-layer wiring, which is connected to each of ends of the fuse element. Provided is a semiconductor device in which fuse elements made of the high-melting point metal are arranged at high density.

Abstract: The present disclosure relates to a semiconductor package with reduced parasitic coupling effects, and a process for making the same. The disclosed semiconductor package includes a thinned flip-chip die and a first mold compound component with a dielectric constant no more than 7. The thinned flip-chip die includes a back-end-of-line (BEOL) layer with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, a device layer over the upper surface of the BEOL layer, and a buried oxide (BOX) layer over the device layer. The BEOL layer includes a first passive device and a second passive device, which are underlying the first surface portion and not underlying the second surface portion. Herein, the first mold compound component extends through the BOX layer and the device layer to the first surface portion.

Abstract: A semiconductor device includes a substrate having a semiconductor fin, in which the semiconductor fin has a first sidewall and a second sidewall opposite to the first sidewall; an epitaxy structure in contact with the first sidewall of the semiconductor fin; and a spacer in contact with the second sidewall of the semiconductor fin and the epitaxy structure.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate capacitor, and both capacitors share a common capacitor plate. The two parallel plate capacitors can be connected in parallel to increase the capacitance per unit area.

Abstract: The disclosure relates to the field of display technologies and particularly to a chip, a flexible display panel and a display device. The chip includes a body and a plurality of connection terminals arranged on a surface of the body, where each connection terminal is provided with a stress concentration resisting structure for preventing from producing the stress concentration phenomenon.

Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.

Abstract: A system in package is provided comprising an embedded trace substrate having redistribution layers therein, at least one passive component mounted on one side of the embedded trace substrate and embedded in a first molding compound, at least one silicon die mounted on an opposite side of the embedded trace substrate and embedded in a second molding compound wherein electrical connections are made between the at least one silicon die and the at least one passive component through the redistribution layers, and solder balls mounted through openings in the second molding layer to the redistribution layers wherein the solder balls provide package output.

Abstract: A reliability cover that is disposed over at least one of an integrated circuit package and a Si die of the integrated circuit package is disclosed. The integrated circuit package is mountable to a printed circuit board via a plurality of solder balls. The reliability cover is configured to reduce a difference in a coefficient of thermal expansion between the integrated circuit package and the printed circuit board, and between the Si die and a substrate of the integrated circuit package by a threshold value.

Abstract: A memory and a method for fabricating the memory are provided. The memory includes a bit-line layer on a semiconductor substrate and having bit lines arranged in the bit-line layer. The memory also includes a shielding layer on the bit-line layer and having a conductive shielding structure arranged in the shielding layer. The conductive shielding structure is within a top-view projection area of the bit lines and is grounded. Further, the memory includes a word-line layer on the shielding layer and having word lines arranged in the word-line layer.

Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.