Abstract: A semiconductor package includes a first structure, a first semiconductor chip on the first structure, a first conductive pad on the first structure between the first structure and the first semiconductor chip, a second conductive pad on a lower surface of the first semiconductor chip and vertically overlapping the first conductive pad, a bump connecting the first conductive pad and the second conductive pad, a first adhesive layer surrounding at least a part of side walls of the bump and side walls of the first conductive pad, and a second adhesive layer surrounding at least a part of the side walls of the bump and side walls of the second conductive pad, the second adhesive layer including a material different from the first adhesive layer, wherein a horizontal width of the first adhesive layer is smaller than a horizontal width of the second adhesive layer.

Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

Abstract: A chip package and method for fabricating the same are provided that include hybrid bonded bridge dies connecting IC dies on adjacent die stacks. In one example, a chip package includes an interconnect routing structure, a first die stack and a second die stack. The first die stack includes a top die disposed over a bottom die, the bottom die stacked on the interconnect routing structure. The second die stack also includes a top die disposed over a bottom die, the bottom die stacked on the interconnect routing structure. The first bridge die is electrically and mechanically coupled to the top dies of the first and second die stacks. The first bridge die having solid state circuitry that connects circuitries of the top dies of the first and second die stacks.

Abstract: A semiconductor package includes: a first redistribution layer including a first wiring; a die located on the first redistribution layer; and a shielding structure surrounding the die from an upper surface and side surfaces of the die, wherein the shielding structure includes: a shielding wall that is spaced apart from the side surfaces of the die and surrounds the side surfaces of the die; and a shielding cover that is spaced apart from the upper surface of the die and surrounds the upper surface of the die.

Abstract: Disclosed is a semiconductor package comprising a solder ball, a printed circuit board on the solder ball, a bump on the printed circuit board, and a semiconductor chip on the bump. The printed circuit board includes a base substrate, a low-k dielectric layer that penetrates the base substrate, a connection conductive structure electrically connected to the bump and surrounded by the low-k dielectric layer, and a lower conductive structure electrically connected to the solder ball and the connection conductive structure. A top surface of the lower conductive structure is in contact with a first bottom surface of the low-k dielectric layer.

Abstract: Semiconductor device package assemblies and associated methods are disclosed herein. In some embodiments, the semiconductor device package assembly includes (1) a base component having a front side and a back side opposite the first side, the base component having a first metallization structure at the front side, the first metallization structure being exposed in a contacting area at the front side; (2) a semiconductor device package having a first side and a second side, the semiconductor device package having a second metallization structure at the first side; and (3) a metal bump at least partially positioned in the recess and electrically coupled to the second metallization structure and the first metallization structure.

Abstract: A package comprising a first metallization portion, a first integrated device coupled to the first metallization portion through a first plurality of pillar interconnects, and a first chiplet located between the first integrated device and the first metallization portion. The first chiplet is coupled to the first integrated device through a first plurality of inter pillar interconnects. The first chiplet may include an active chiplet. The first chiplet may include a passive chiplet.

Abstract: A semiconductor package includes: a substrate; a circuit layer disposed on a lower surface of the substrate, the circuit layer including an interconnection structure; a first redistribution structure disposed adjacent to the circuit layer, the first redistribution structure including a first redistribution layer; a connection structure including a first connection via electrically connected to the first redistribution layer, a second connection via electrically connected to the interconnection structure, and a connection interconnection interconnecting the first and second connection vias; a semiconductor chip disposed below the first redistribution structure, and electrically connected to the first redistribution layer; a first vertical connection structure disposed on a lower surface of the circuit layer; a second vertical connection structure disposed on a lower surface of the connection structure; and a second redistribution structure disposed below the semiconductor chip and the first and second vertical

Abstract: In one example, an electronic device comprises a substrate comprising a top side, a bottom side, a lateral side, and a conductive structure, a first electronic component over the top side of the substrate and coupled with the conductive structure, an encapsulant contacting the top side of the substrate, the bottom side of the substrate, and the lateral side of the substrate, a lid over the first electronic component and over the encapsulant, and a second electronic component over the top side of the substrate and coupled with the conductive structure, wherein the second electronic component is between the first electronic component and the lateral side of the substrate. Other examples and related methods are also disclosed herein.

Abstract: A method includes forming a layer stack with at least one electrically insulating layer structure and at least one patterned electrically conductive layer structure on a temporary carrier, the layer stack includes a lower surface adjoining the temporary carrier and an upper surface opposite to the lower surface; mounting a first component at the upper surface; placing a first frame structure at the upper surface, the first frame structure surrounding at least partially the first component; covering the first component with a first coating material, the first coating material spatially extending at least partially into voids at or within the first frame structure and into voids at or within the layer stack; and removing the temporary carrier. The lower surface of the layer stack is an even surface. The opposite upper surface of the layer stack is an uneven surface. An electronic package can be manufactured with the described method.

Abstract: In some embodiments, a semiconductor structure includes a first conductivity type region comprising a first superlattice, and an i-type active region adjacent to the first conductivity type region comprising an i-type superlattice. The first conductivity type region can be a p-type region or an n-type region. The first superlattice can be comprised of a plurality of first unit cells comprising a first set of single crystal layers, and the i-type superlattice can be comprised of a plurality of i-type unit cells comprising a second set of single crystal layers. An average alloy content of the plurality of the first unit cells and the i-type unit cells can be constant along a growth direction. The structure can be configured such that electrons and holes recombine to generate a spectrum of light with a longest wavelength peak that corresponds to a transition between electron and hole confined energy states within the i-type superlattice.

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an insulating layer, and first, second, and third redistribution patterns disposed in the insulating layer. The first to third redistribution patterns are sequentially stacked in an upward direction and are electrically connected to each other. Each of the first to third redistribution patterns includes a wire portion that extends parallel to the top surface of the redistribution substrate. Each of the first and third redistribution patterns further includes a via portion that extends from the wire portion in a direction perpendicular to the top surface of the redistribution substrate. The second redistribution pattern further includes first fine wire patterns that are less wide than the wire portion of the second redistribution pattern.

Abstract: A package substrate includes a plurality of sequentially stacked insulating layers, a first signal line configured to transmit a first signal therethrough, and a ground line. The first signal line including a first signal via at least partially penetrating the plurality of insulating layers, a first signal pad provided at one end of the first signal via in any selected one of the insulating layers, and a first signal wiring extending from the first signal pad in the selected insulating layer. The ground line including a ground via at least partially penetrating the plurality of insulating layers, a ground pad provided at one end of the ground via in the selected insulating layer, a ground wiring extending from the ground pad in the selected insulating layer, and a ground stub extending from the ground pad toward the first signal via or the first signal pad.

Abstract: The present disclosure describes a process for making a three-dimensional (3D) package, which starts with providing a mold precursor module that includes a first device die and a floor connectivity die (FCD) encapsulated by a mold compound. The FCD includes a sacrificial die body and multiple floor interconnections underneath the sacrificial die body. Next, the mold compound is thinned down until the sacrificial die body of the FCD is completely consumed, such that each floor interconnection is exposed through the mold compound. The thinning down step does not affect a device layer in the first device die. A second device die, which includes a die body and multiple electrical die interconnections, is then mounted over the exposed floor interconnections. Herein, each electrical die interconnection is vertically aligned with and electrically connected to a corresponding floor interconnection from the FCD.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed that adhere a dielectric to a nonconductive layer in circuit devices. An example apparatus includes an electrically conductive layer, a dielectric layer, and an electrically nonconductive layer separating the dielectric layer from the conductive layer, the nonconductive layer having a first surface facing the conductive layer and a second surface facing the dielectric layer, the first surface having a first roughness, the second surface having a second roughness greater than the first roughness.

Abstract: A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

Abstract: Disclosed are an array substrate and a display panel. The array substrate includes a TFT device layer; a pixel definition layer arranged in a non-via area of a non-opening area of the TFT device layer, the non-opening area including a via area and the non-via area; a barrier wall arranged at the via area and in an inverted trapezoid shape; an organic light emitting diode layer arranged on an upper end of the barrier wall and an upper end of part of auxiliary electrodes in the via area; and a cathode arranged on the upper end of the part of the auxiliary electrodes in the via area. This application may alleviate the uneven distribution of cathode voltage to improve the brightness uniformity of the display panel.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a first electronic component, a second electronic component and a conductive element. The conductive element includes a first portion and a second portion. The first portion is configured to block an electromagnetic interference between the first electronic component and the second electronic component. The second portion protrudes from the first portion and contacts a shielding layer.

Abstract: Integrated bare die packages, and related fabrication methods are disclosed. To provide for the integration of a bare die filter into the bare die package while maintaining an acoustic cavity for the bare die filter and conserving package size, the bare die filter is vertically-integrated with a second component (e.g., another die, a second bare die filter, a passive electrical device(s)). In examples, the bare die filter is vertically-integrated with the second component in a second direction (e.g., vertical direction) orthogonal to the first direction on a first side of a package substrate of the bare die package. The bare die filter and the second component each intersect a common plane in the second direction. In this manner, the expansion in size of the bare die package through the integrated of bare die filter is minimized, while also maintaining the acoustic cavity of the bare die filter.

Abstract: The present disclosure relates to a semiconductor package, a semiconductor bonding structure and a method of fabricating the same. The semiconductor package includes a first chip, a second chip and a conductive structure, wherein the conductive structure is disposed at a side of the second chip and over a second upper surface of the first interconnection structure to electrically connect to the first interconnection structure. The semiconductor bonding structure includes a first substrate, a plurality of first interconnection structures, a plurality of chips and a plurality of conductive structures, wherein the conductive structures are respectively disposed at a side of each of the chips and over a second upper surface of each first interconnection structure, to electrically connect to each first interconnection.