Abstract: Devices, systems, methods, and/or computer-implemented methods that can facilitate protection of a substrate in a qubit device using sacrificial material are provided. According to an embodiment, a device can comprise a superconducting lead provided on a pillar of a sacrificial material provided on a substrate. The device can further comprise a collapsed superconducting junction provided on the substrate and coupled to the superconducting lead.

Abstract: The present application provides an optical semiconductor device with a composite intervening structure. The optical semiconductor device includes a logic die including a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and including a memory cell area and a memory peripheral area, and a first inter-die via positioned in the memory peripheral area and electrically connected to the logic peripheral circuit area; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area and electrically coupled to the logic peripheral circuit area through the first inter-die via, and a second intra-die via positioned in the sensor peripheral area. The intervening structure is disposed on the back surface of the memory die.

Abstract: A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.

Abstract: A quantum computing system includes a dilution refrigerator having a plurality of chambers. A trapped ion computing device includes a first set of qubits in a given chamber of the plurality of chambers of the dilution refrigerator. A superconducting computing device having a second set of superconducting qubits is inside the given chamber of the plurality of chambers of the dilution refrigerator.

Abstract: Disclosed are a quantum chip test structure and a fabrication method therefor, and a test method and a fabrication method for a quantum chip. The quantum chip test structure includes: a superconducting Josephson junction and a connection structure of the superconducting Josephson junction that are located on a substrate; a first isolation layer located on the connection structure, where a connection window penetrating through the first isolation layer is formed in the first isolation layer; a second isolation layer located on the first isolation layer, where a deposition window is formed in the second isolation layer; and an electrical connection portion located in the connection window and an electrical connection layer located in the deposition window, and the electrical connection layer is configured to implement electrical contact with a test device.

Abstract: A hybrid classical-quantum computing device to execute a quantum circuit corresponding to a variational problem, is configured. The configuring further comprises causing the hybrid classical-quantum computing device to execute the quantum circuit by performing an adiabatic progression operation, wherein the adiabatic progression operation comprises increasing the difficulty of the variational problem from a simplified version of the problem to the variational problem.

Abstract: The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

Abstract: A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.

Abstract: A hybrid classical-quantum computing device to execute a quantum circuit corresponding to a variational problem, is configured. The configuring further comprises causing the hybrid classical-quantum computing device to execute the quantum circuit by performing an adiabatic progression operation, wherein the adiabatic progression operation comprises increasing the difficulty of the variational problem from a simplified version of the problem to the variational problem.

Abstract: There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region.

Abstract: A plurality of photoelectric converters is formed on a semiconductor substrate and performs photoelectric conversion according to incident light. A light path portion includes a transparent film through which the incident light is transmitted, a light-blocking wall for each of the plurality of photoelectric converters, the light-blocking wall partitioning the transparent film in a direction perpendicular to the semiconductor substrate, and blocking light, and a light-blocking film at an end of the light-blocking wall, the end being opposite to an end of the light-blocking wall that is closer to the semiconductor substrate, the light-blocking film having a film shape parallel to the semiconductor substrate, and including, for each of the plurality of photoelectric converters, an opening through which the incident light is transmitted.

Abstract: In a method of treating a target film, a plurality of pattern structures with sidewall surfaces facing each other are provided. A target film is formed on the sidewalls of the plurality of pattern structures. A plurality of nanoparticles are distributed on the target thin film. The target thin film is thermally treated by irradiating laser light from upper sides of the plurality of pattern structures to the target thin film. The irradiated laser light is scattered from the plurality of nanoparticles.

Abstract: A unit includes a wiring board having a first face having a mounting portion on which an electronic device is mounted, a second face opposite to the first face, and end faces continuous with the first face and the second face, a resin member provided to cover the end faces and to have protrusions protruding upward from the end faces to face each other across a space above the mounting portion, and an insulating film covering the second face, wherein at least a part of an edge of the insulating film is provided away from an end of the second face on the end face side.

Abstract: Provided are a piezoelectric element for a speaker and a method of manufacturing the same. The piezoelectric element for a speaker includes a plurality of piezoelectric ceramic layers stacked on one another in a thickness direction, and a plurality of electrodes provided to be connected to middle portions of sides of the plurality of piezoelectric ceramic layers along external walls of the plurality of stacked piezoelectric ceramic layers, wherein middle portions of some sides from among a plurality of sides of each of the plurality of piezoelectric ceramic layers are etched, and wherein the plurality of piezoelectric ceramic layers are stacked on one another in the thickness direction not to overlap non-etched sides from among the plurality of sides.

Abstract: In one embodiment, a semiconductor device includes a first substrate, and a plurality of electrode layers provided above the first substrate and stacked in a first direction. The device further includes a first semiconductor layer extending in the first direction in the plurality of electrode layers, and a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction. The device further includes a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer.

Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.

Abstract: The present disclosure relates to a method for manufacturing of specially designed substrates for growth of nanostructures and patterned growth on said nanostructures. The present disclosure further relates to nanostructures, in particular hybrid semiconductor nanostructures with patterned growth of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of quantum devices that have not been contaminated by ex-situ processes.

Abstract: A non-volatile memory device and a semiconductor structure including a vertical resistive memory cell and a fabrication method therefor. The semiconductor structure including a target metal contact; a horizontal dielectric layer; and at least one vertically oriented memory cell, each vertically oriented memory cell including a vertical memory resistive element having top and bottom electrical contacts, and including a vertically-oriented seam including conductive material and extending vertically from, and electrically connected to, the bottom electrical contact, the vertically-oriented seam and the bottom electrical contact entirely located in the horizontal dielectric layer; and one of the top and bottom electrical contacts being electrically connected to the target metal contact. The target electrical contact can be electrically connected to a memory cell selector device.

Abstract: An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.