Abstract: Apparatus and method for quantum drift compensation. For example, one embodiment of a quantum system comprises: a quantum processor comprising one or more data quantum bits (qubits) and one or more ancilla qubits; a quantum controller to control the qubits responsive to a quantum runtime; an error detector to detect errors in the qubits; a quantum drift compensator to determine a current system drift for the quantum processor based on the errors and to responsively generate a set of compensation values if the current system drift is determined to be above a threshold.
Abstract: Josephson junctions (JJ) based on bilayers of azimuthally misaligned two-dimensional materials having superconducting states are provided. Also provided are electronic devices and circuits incorporating the JJs as active components and methods of using the electronic devices and circuits. The JJs are formed from bilayers composed of azimuthally misaligned two-dimensional materials having a first superconducting segment and a second superconducting segment separated by a weak-link region that is integrated into the bilayer.
Abstract: One embodiment described herein provides a system and method for simulating behavior of a quantum circuit that includes a plurality of quantum gates. During operation, the system receives information that represents the quantum circuit and constructs an undirected graph corresponding to the quantum circuit. A respective vertex within the undirected graph corresponds to a distinct variable in a Feynman path integral used for computing amplitude of the quantum circuit, and a respective edge corresponds to one or more quantum gates. The system identifies a vertex within the undirected graph that is coupled to at least two two-qubit quantum gates; simplifies the undirected graph by removing the identified vertex, thereby effectively removing the two-qubit quantum gates coupled to the identified vertex; and evaluates the simplified undirected graph, thereby facilitating simulation of the behavior of the quantum circuit.
Abstract: Qubit circuits having components formed deep in a substrate are described. The qubit circuits can be manufactured using existing integrated-circuit technologies. By forming components such as superconducting current loops, inductive, and/or capacitive components deep in the substrate, the footprint of the qubit circuit integrated within the substrate can be reduced. Additionally, coupling efficiency to and from the qubit can be improved and losses in the qubit circuit may be reduced.
Type:
Grant
Filed:
January 4, 2021
Date of Patent:
July 11, 2023
Assignee:
Massachusetts Institute of Technology
Inventors:
Wayne Woods, Danna Rosenberg, Cyrus Hirjibehedin, Donna-Ruth Yost, Justin Mallek, Andrew Kerman, Mollie Schwartz, Jonilyn Yoder, William Oliver, Thomas Hazard
Abstract: A quantum device (100) includes: an interposer (112); a quantum chip (111); and a connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111), in which the connection part (130) includes: a plurality of pillars (131) arranged on a main surface of the interposer (112); and a metal film (132) provided on a surface of the plurality of pillars (131) in such a way that it contacts the wiring layer of the quantum chip (111) and the thickness of the metal film at outer peripheral parts of the tip of each of the plurality of pillars (131) becomes larger than the thickness of the metal film at a center part of the tip of each of the plurality of pillars (131).
Abstract: The present disclosure discloses a high-fidelity superconducting circuit structure, a superconducting quantum chip, and a superconducting quantum computer, which relate to the field of quantum computation. The specific implementation is as follows: computation qubits; a coupling device configured to be coupled with two computation qubits, respectively; a connecting component disposed between a computation qubit and the coupling device to couple the computation qubit with the coupling device, so as to implement a target quantum gate based on the coupling device and the computation qubit.
Type:
Grant
Filed:
March 22, 2021
Date of Patent:
June 27, 2023
Assignee:
BEIJING BAIDU NETCOM SCIENCE AND TECHNOLOGY CO., LTD.
Abstract: The present disclosure describes non-classical (e.g., quantum) computing systems and methods that utilize dopant molecules contained in host materials as qubits.
Type:
Grant
Filed:
May 11, 2022
Date of Patent:
June 20, 2023
Assignee:
NVision Imaging Technologies GmbH
Inventors:
Ilai Schwartz, Matthias Pfender, Tobias Schaub, Philipp Neumann
Abstract: A method of generating a photon with multiple dimensions includes a step of generating a first photon encoded with quantum information in each of two or more frequency bins and at least one time bin. The method further includes performing a frequency dependent time operation to entangle (i.e. make non-separable) the frequency bins and the time bins in the photon.
Abstract: Apparatus and circuits with dual threshold voltage transistors and methods of fabricating the same are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first layer comprising a first III-V semiconductor material formed over the substrate; a first transistor formed over the first layer, and a second transistor formed over the first layer. The first transistor comprises a first gate structure comprising a first material, a first source region and a first drain region. The second transistor comprises a second gate structure comprising a second material, a second source region and a second drain region. The first material is different from the second material.
Abstract: Devices, systems, methods, and/or computer-implemented methods that can facilitate a qubit device comprising a vacuum encapsulated Josephson junction are provided. According to an embodiment, a device can comprise a substrate having an encapsulated vacuum cavity provided on the substrate. The device can further comprise one or more superconducting components of a superconducting circuit provided inside the encapsulated vacuum cavity.
Type:
Grant
Filed:
September 29, 2020
Date of Patent:
June 13, 2023
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventors:
Isaac Lauer, Karthik Balakrishnan, Jeffrey Sleight, David James Frank
Abstract: A system that includes: an array of qubits, each qubit of the array of qubits comprising a first electrode corresponding to a first node and a second electrode corresponding to a second node, wherein, for a first qubit in the array of qubits, the first qubit is positioned relative to a second qubit in the array of qubits such that a charge present on the first qubit induces a same charge on each of the first node of the second qubit and the second node of the second qubit, such that coupling between the first qubit and the second qubit is reduced, and wherein none of the nodes share a common ground is disclosed.
Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
Abstract: Embodiments include a transistor device that comprises a gate electrode and a gate dielectric surrounding the gate electrode. In an embodiment, a source region may be below the gate electrode and a drain region may be above the gate electrode. In an embodiment, a channel region may be between the source region and the drain region. In an embodiment, the channel region is separated from a sidewall of the gate electrode by the gate dielectric. In an embodiment, a capacitor may be electrically coupled to the drain region.
Abstract: An optoelectronic module may include one or more non-rectangular optoelectronic dies e.g., light emitting diodes and photodiodes, arranged to maximize the usage of surface area when mounted to a base circuit board. Multi-axis and non-orthogonal axis dicing processes can be used to form the dies which have non-rectangular shapes.
Type:
Grant
Filed:
February 11, 2021
Date of Patent:
May 9, 2023
Assignee:
Apple Inc.
Inventors:
Mathieu Charbonneau-Lefort, Saahil Mehra, Tongbi T. Jiang, Saijin Liu
Abstract: A method of modifying a resonant frequency of a quantum device includes generating an ion beam having a beam energy and exposing a surface of the quantum device to the ion beam for an exposure time. The ion beam is incident onto the quantum device at an oblique angle that is less than 90 degrees as measured from the surface of the quantum device. The quantum device includes a Josephson junction, the ion beam exposing the quantum device proximate to the Josephson junction to modify a property of the Josephson junction, the property being associated with the resonant frequency of the quantum device.
Type:
Grant
Filed:
October 6, 2020
Date of Patent:
May 2, 2023
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventors:
Matthias Mergenthaler, Andreas Fuhrer Janett, Stephan Paredes, Peter Mueller
Abstract: A method for processing a semiconductor device with two closely space gates comprises forming a template structure, wherein the template structure includes at least one sub-structure having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is formed by the removed sub-structure.
Type:
Grant
Filed:
June 11, 2021
Date of Patent:
April 25, 2023
Assignee:
IMEC VZW
Inventors:
Boon Teik Chan, Ruoyu Li, Stefan Kubicek, Julien Jussot
Abstract: Systems and techniques that facilitate mode-selective couplers for frequency collision reduction are provided. In various embodiments, a device can comprise a control qubit. In various aspects, the device can comprise a first target qubit coupled to the control qubit by a first mode-selective coupler. In various instances, the first mode-selective coupler can facilitate A-mode coupling between the control qubit and the first target qubit. In various embodiments, the device can comprise a second target qubit coupled to the control qubit by a second mode-selective coupler. In various aspects, the second mode selective coupler can facilitate B-mode coupling between the control qubit and the second target qubit. In various embodiments, the first mode-selective coupler can comprise a capacitor that capacitively couples a middle capacitor pad of the control qubit to a middle capacitor pad of the first target qubit.
Type:
Grant
Filed:
June 8, 2020
Date of Patent:
April 11, 2023
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Abstract: A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.
Abstract: A quantum circuit called a “qumon” is provided to cancel unwanted ZZ interaction in a superconducting qubit architecture. The qumon qubit has a high coherence, and a positive anharmonicity that may be tuned to cancel the negative anharmonicity in a coupled qubit, such as a transmon qubit. The qumon has three parallel branches, in which are a shunt capacitor; a Josephson junction having weighted energy level and capacitance; and several Josephson junctions in series. The weight is chosen to provide the desired anharmonicity, and the transverse flux noise and transverse charge noise each decrease in proportion to the number of the Josephson junctions in series. Because unwanted ZZ interactions are canceled, qumon qubits and transmon qubits may be capacitively coupled in an alternating pattern to provide a surface code in which these interactions are canceled in an extensible way.
Type:
Grant
Filed:
March 1, 2021
Date of Patent:
March 28, 2023
Assignee:
Massachusetts Institute of Technology
Inventors:
William D. Oliver, Simon Gustavsson, Roni Winik, Catherine Leroux, Agustin Di Paolo, Alexandre Blais
Abstract: A quantum processing system is disclosed. In one embodiment, a quantum processing system comprises: a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site; and a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits. Where, at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the [110] direction of the silicon crystal substrate and are configured to operate as qubits.
Type:
Grant
Filed:
July 19, 2019
Date of Patent:
March 21, 2023
Inventors:
Benoit Voisin, Joseph Salfi, Sven Rogge