Abstract: A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Abstract: An organic light emitting display panel including a substrate including a plurality of subpixel regions; a first electrode disposed on the substrate in each subpixel region; a first bank layer disposed in a boundary portion of each subpixel region and covering an edge of the first electrode, the first bank layer including micropatterns at an upper surface thereof, a first printed organic material layer disposed on the first electrode and a side surface of the first bank layer; a second deposited organic material layer disposed on the first organic material layer and the first bank layer; a second bank layer disposed at the upper surface of the first bank layer; a third printed organic material layer disposed on the side surface of the first bank layer and the second organic material layer; a fourth deposited organic material layer disposed on the third organic material layer and the second bank layer; and a second electrode disposed on the fourth organic material layer.

Abstract: A gate-all-around (GAA) high voltage transistor of the laterally double-diffused metal-oxide semiconductor (LDMOS) type has a loop-shaped gate electrode disposed below a surface of a semiconductor substrate. The loop-shaped gate electrode surrounds a vertical channel formed by a first source/drain region, a body region, and a diffusion region. The first source/drain region is on top, the body region is in the middle, and the diffusion region is underneath. A loop-shaped shallow trench isolation (STI) region surrounds the loop-shaped gate electrode. The diffusion region begins inside the loop-shaped gate electrode, extends under the loop-shaped gate electrode and the loop-shaped STI region, and rises outside the loop-shaped STI region to join with a second source/drain region. This structure allows pitch to be reduced by 40% or linear drive current to be doubled in comparison to an asymmetric NMOS transistor providing otherwise equivalent functionality.

Abstract: An OLED is disclosed that includes an enhancement layer having optically active metamaterials, or hyperbolic metamaterials, which transfer radiative energy from the organic emissive material to a non-radiative mode, wherein the enhancement layer is disposed over the organic emissive layer opposite from the first electrode, and is positioned no more than a threshold distance away from the organic emissive layer, wherein the organic emissive material has a total non-radiative decay rate constant and a total radiative decay rate constant due to the presence of the enhancement layer, and the threshold distance is where the total non-radiative decay rate constant is equal to the total radiative decay rate constant; and an outcoupling layer disposed over the enhancement layer, wherein the outcoupling layer scatters radiative energy from the enhancement layer to free space.

Abstract: A device includes a substrate and a transistor on the substrate. The transistor includes a channel region that has at least one semiconductor nanostructure, and a gate electrode. A source/drain region is disposed adjacent to a first side of the channel region along a first direction. A hybrid fin structure is disposed adjacent to a second side of the channel region along a second direction that is transverse to the first direction. The hybrid fin structure includes a first hybrid fin dielectric layer and a second hybrid fin dielectric layer. The first and second hybrid fin dielectric layers include silicon, oxygen, carbon and nitrogen and have a different concentration of at least one of silicon oxygen, carbon, or nitrogen from one another.

Abstract: A power semiconductor module has a substrate arrangement which has a substrate, wherein the respective substrate has conductor tracks, power semiconductor components arranged on the substrate conductor tracks and electrically conductively contacted therewith, a foil stack arrangement which has at least one foil stack, and the foil stack comprises foil stack conductor tracks.

Abstract: A method for fabricating a semiconductor device includes: forming an etch stopper pad including a sacrificial plug over a substrate and a sacrificial pad over the sacrificial plug; forming an etch target layer over the etch stopper pad; forming a plurality of openings by etching the etch target layer and stopping the etching at the sacrificial pad; forming an air gap by removing the sacrificial pad and the sacrificial plug through the openings; and forming a gap-fill layer that fills the openings and the air gap.

Abstract: Implementations of semiconductor packages may include one or more die coupled over a substrate, an electrically conductive spacer coupled over the substrate, and a clip coupled over and to the one or more die and the electrically conductive spacer. The clip may electrically couple the one or more die and the electrically conductive spacer.

Abstract: A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.

Abstract: A semiconductor device with different isolation structures and a method of fabricating the same are disclosed. The a method includes forming first and second fin structures on a substrate, forming a dummy fin structure on the substrate and between the first and second fin structures, forming a polysilicon structure on the dummy fin structure, forming source/drain regions on the first and second fin structures, and replacing the polysilicon structure with a dummy gate structure. A top portion of the dummy gate structure is formed wider than a bottom portion of the dummy gate structure.

Abstract: The present application discloses a method for fabricating a semiconductor device. The method includes: providing a substrate; forming an impurity region in the substrate; forming a first dielectric layer on the substrate; forming an opening along the first dielectric layer to expose the impurity region; conformally forming a layer of first material in the opening; forming a layer of filler material on the layer of first material to completely fill the opening; and performing a planarization process until the top surface of the first dielectric layer is exposed to turn the layer of first material into an intervening film and the layer of filler material into a filler layer. The intervening film includes a U-shaped cross-sectional profile and silicon carbide.

Abstract: A semiconductor device or structure includes a first pattern metal layer disposed between a first supply metal tract and a second supply metal tract, the first pattern metal layer comprising an internal route and a power route. A follow pin couples the first supply metal to the power route. The first supply metal tract comprises a first metal and a follow pin comprises a second metal.

Abstract: A display device includes a substrate, a pixel defining layer defining a first opening, a light emitting element including a first electrode exposed to outside the pixel defining layer by the first opening and a light emitting layer in the first opening and facing the first electrode, and a spacer spaced apart from the pixel defining layer along the substrate. The pixel defining layer and the spacer each includes a top surface which is furthest from the substrate and a height of the top surface from the substrate, and the height of the top surface of the spacer is greater than the height of the top surface of the pixel defining layer.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor structure includes: a base including bit lines arranged at intervals and semiconductor channels arranged at intervals, bit lines extending in first direction, semiconductor channels being located at part of top surfaces of bit lines, each semiconductor channel including first area, second area, and third area arranged successively in a direction perpendicular to top surfaces of bit lines; dielectric layers located between adjacent bit lines and located on side walls of semiconductor channels; gate electrodes surrounding dielectric layers in second area and extending in second direction; metal semiconductor compound layers located on top surfaces of semiconductor channels; diffusion barrier layers at least surrounding side walls of metal semiconductor compound layers; and insulating layers located between adjacent semiconductor channels on same bit line and isolating gate electrodes and diffusion barrier layers on each dielectric layer from gate electrodes and diffusion barrier layers on dielec

Abstract: A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Abstract: A display device includes a substrate comprising a display area and a non-display area, a via layer disposed on the substrate, a pixel electrode disposed on the via layer in the display area, and a pixel-defining layer disposed on the pixel electrode and a part of the via layer exposed by the pixel electrode, wherein the pixel-defining layer comprises a first area disposed in the display area and comprising an opening exposing a part of the pixel electrode, and a second area disposed in the non-display area and comprising an end, and wherein the first area comprises a first side surface defining the opening, wherein the second area comprises a second side surface at the end, wherein a first taper angle which is a taper angle of the first side surface is different from a second taper angle which is a taper angle of the second side surface.

Abstract: A method for forming a memory includes the following operations: a substrate and a semiconductor layer located on the substrate are formed; the semiconductor layer is patterned to form a plurality of first isolation structures and channel regions, each first isolation structure includes a first through hole and a second through hole, and a first isolation pillar located between the first through hole and the second through hole; a first filling layer filling up the first through hole and the second through hole is formed; the first isolation pillar is removed to form a third through hole located in the first filling layer; a barrier layer filling up the third through hole is formed; the channel regions are exposed by removing the first filling layer; and a gate layer covering surfaces of the channel regions is formed.

Abstract: A display panel includes a pixel electrode, a common electrode which faces the pixel electrode, an auxiliary electrode spaced apart from the pixel electrode and connected to the common electrode, and a first functional layer between the pixel electrode and the common electrode, the first functional layer extending from the pixel electrode to the auxiliary electrode. The common electrode which is connected to the auxiliary electrode includes in order in a direction away from the first functional layer, a first layer including a transparent conductive material and having a thickness of about 500 angstroms to about 6000 angstroms, and a second layer including a conductive material and having a thickness of about 10 angstroms to about 100 angstroms.

Abstract: A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.