Patents Examined by Michelle Mandala
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Patent number: 10978562Abstract: A structure includes a semiconductor substrate, a buffer layer disposed over the semiconductor substrate, an oxide layer disposed over the buffer layer, and a fin including a semiconductor material disposed over the oxide layer.Type: GrantFiled: January 3, 2020Date of Patent: April 13, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anirban Basu, Guy M. Cohen, Amlan Majumdar, Yu Zhu
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Patent number: 10978518Abstract: A display panel includes an upper display substrate including a display area and a non-display area adjacent to the display area, the display area including first to third pixel areas and a light shielding area adjacent to the first to third pixel areas, a lower display substrate including first to third light emitting elements configured to emit light of a first color and overlapping the first to third pixel areas, respectively, and a plurality of spacers overlapping the display area and arranged between the upper display substrate and the lower display substrate.Type: GrantFiled: September 11, 2019Date of Patent: April 13, 2021Assignee: Samsung Display Co., Ltd.Inventors: Jeaheon Ahn, YeoGeon Yoon, Jeongki Kim, Seok-Joon Hong
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Patent number: 10971361Abstract: A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.Type: GrantFiled: November 1, 2019Date of Patent: April 6, 2021Assignee: V TECHNOLOGY CO., LTD.Inventor: Michinobu Mizumura
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Patent number: 10971417Abstract: Disclosed herein is a package comprising a first die having a first redistribution layer (RDL) disposed on a first side of a first substrate and a second die having a second RDL disposed on a first side of a second substrate, with the first RDL bonded to the second RDL. A third die having a third RDL is disposed on a first side of a third substrate, the third die mounted over the second die, with the second die disposed between the first die and the third die. First vias extend through, and are electrically isolated from, the second substrate, with the first vias each contacting a conductive element in the first RDL or the second RDL. Second vias extend through, and are electrically isolated from, the third substrate, with the second vias each contacting a conductive element in the third RDL or one of the first vias.Type: GrantFiled: August 5, 2019Date of Patent: April 6, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Ming-Fa Chen, Wen-Sen Lu, Wen-Chih Chiou, Wen-Ching Tsai
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Patent number: 10950674Abstract: Provided is a display panel, including a first display area and a second display area. A transparent collimator is provided in a gap between two adjacent sub-pixels in the first display area, and meanwhile, a substrate under the collimator is a thinner substrate or a transparent substrate. Thus, a certain display area of the display panel possesses good light transmittance and resolution.Type: GrantFiled: March 25, 2019Date of Patent: March 16, 2021Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.Inventors: Qi Ouyang, Mugyeom Kim, Yong Zhao
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Patent number: 10950437Abstract: A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.Type: GrantFiled: August 22, 2018Date of Patent: March 16, 2021Assignee: V TECHNOLOGY CO., LTD.Inventor: Michinobu Mizumura
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Patent number: 10950516Abstract: A power semiconductor module includes a substrate with a metallization layer; at least one power semiconductor chip bonded to the substrate; and a mold encapsulation partially encapsulating the semiconductor chip and the substrate; the mold encapsulation includes at least one window exposing a terminal area of the metallization layer; and a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of a central part of the mold encapsulation.Type: GrantFiled: November 4, 2019Date of Patent: March 16, 2021Assignees: ABB Schweiz AG, AUDI AGInventor: Fabian Mohn
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Patent number: 10948137Abstract: A color conversion panel includes a first color conversion layer, a second color conversion layer, and a light wavelength conversion layer. The first color conversion layer includes a first semiconductor nanocrystal set for providing red light. The second color conversion layer neighbors the first color conversion layer and includes a second semiconductor nanocrystal set for providing first green light. The light wavelength conversion layer neighbors the second light conversion layer, may provide blue light, and includes a third semiconductor nanocrystal set for providing second green light.Type: GrantFiled: December 13, 2018Date of Patent: March 16, 2021Inventors: Seon-Tae Yoon, Jung Hyun Kwon, Ki Soo Park, Hae Il Park, Moon Jung Baek
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Patent number: 10930561Abstract: An SiC substrate processing method includes a separation layer forming step of setting a focal point of a laser beam having a transmission wavelength to SiC inside an SiC substrate and next applying the laser beam to the SiC substrate to thereby form a separation layer inside the SiC substrate, the SiC substrate having a first surface and a second surface opposite to the first surface; a first plate attaching step of attaching a first plate to the first surface of the SiC substrate; a second plate attaching step of attaching a second plate to the second surface of the SiC substrate; and a separating step of applying an external force to the separation layer after performing the first plate attaching step and the second plate attaching step, thereby separating the SiC substrate into a first SiC substrate and a second SiC substrate along the separation layer.Type: GrantFiled: August 21, 2019Date of Patent: February 23, 2021Assignee: DISCO CORPORATIONInventor: Kazuma Sekiya
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Patent number: 10930825Abstract: A method of fabricating closely spaced pcLEDs arranged in a matrix array of perpendicular rows and columns comprises an initial phosphor deposition step in which phosphor is deposited at alternating locations (pixels) in the matrix array in a checkerboard pattern, so that the locations in the array at which phosphor is deposited are not adjacent to each other. In a subsequent phosphor deposition step phosphor is deposited at the alternating locations at which phosphor was not deposited in the first deposition step. In between the two phosphor deposition steps, reflective or scattering structures may be fabricated on sidewalls of the phosphor pixels to optically isolate pcLEDs in the resulting array from each other.Type: GrantFiled: December 26, 2018Date of Patent: February 23, 2021Assignee: Lumileds LLCInventors: Marcel Rene Bohmer, Jacques Heuts, Ken Shimizu, Peter Schmidt
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Patent number: 10930682Abstract: An array substrate, a method for manufacturing the same, and a display apparatus are provided. The array substrate includes multiple pixel units defined by crossed gate lines and data lines, and each unit includes a pixel electrode and a thin film transistor. The array substrate further includes repairing units corresponding to target pixel electrodes in the pixel electrodes, where each repairing unit is connected to a corresponding target pixel electrode and a corresponding target signal line, and is configured to control the target pixel electrode connected to the repairing unit to be electrically connected to or insulated from the target signal line connected to the repairing unit.Type: GrantFiled: May 10, 2019Date of Patent: February 23, 2021Assignees: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yajie Bai, Wu Wang, Xiaoyuan Wang, Zhuo Xu, Ruilin Bi
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Patent number: 10922518Abstract: Embodiments of the present application provide a chip package structure, a chip package method and a terminal device. The chip package structure includes: an optical sensing chip, including a first surface and a second surface, where the first surface is provided with a first pad, the second surface is provided with a connecting end, the first pad is electrically connected to the connecting end, and the connecting end is configured to implement an electrical connection between the chip package structure and the exterior; and an optical path modulating structure, disposed above the first surface, and configured to perform an optical path modulation on an optical signal reflected from a human finger and make the signal incident on the first surface, or perform the optical path modulation on an optical signal emitted from the first surface and make the signal exit to the human finger.Type: GrantFiled: September 30, 2018Date of Patent: February 16, 2021Assignee: SHENZHEN GOODIX TECHNOLOGY CO., LTD.Inventors: Haoxiang Dong, Ya Wei
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Patent number: 10923408Abstract: An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.Type: GrantFiled: December 6, 2018Date of Patent: February 16, 2021Assignee: Invensas Bonding Technologies, Inc.Inventors: Shaowu Huang, Javier A. DeLaCruz, Liang Wang, Rajesh Katkar, Belgacem Haba
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Patent number: 10923671Abstract: Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.Type: GrantFiled: October 22, 2018Date of Patent: February 16, 2021Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventor: Hu Meng
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Patent number: 10919732Abstract: A transport system in a structure includes a car and a plurality of motor modules. The car is constructed and arranged to move along a lane generally defined at least in-part by the structure. The plurality of motor modules are distributed along the lane and are constructed and arranged to propel the car. Each one of the pluralities of motor modules include an embedded power module.Type: GrantFiled: May 28, 2019Date of Patent: February 16, 2021Assignee: OTIS ELEVATOR COMPANYInventor: Shashank Krishnamurthy
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Patent number: 10916670Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.Type: GrantFiled: January 29, 2020Date of Patent: February 9, 2021Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Ki Seok Kim, Ki Hyun Kim, Jin Woo Park, Doo San Kim, You Jin Ji, Ji Young Byun, JiEun Kang
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Patent number: 10916679Abstract: An optical device wafer processing method for transferring an optical device layer of an optical device wafer onto a transfer member includes: a dividing groove forming step of forming dividing grooves in a buffer layer; a transfer member joining step of joining the transfer member to a front surface of the optical device layer; and a laser beam applying step of applying a pulsed laser beam from a back surface side of a crystalline substrate. In the laser beam applying step, the buffer layer, or the buffer layer and part of the optical device layer, left without being divided in the dividing groove forming step, are modified in nature.Type: GrantFiled: August 21, 2019Date of Patent: February 9, 2021Assignee: DISCO CORPORATIONInventor: Tasuku Koyanagi
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Patent number: 10908318Abstract: We describe a luminescent device (120, 130) comprising a substrate (102) and a film comprising perovskite crystals (122, 132) deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer (124, 134)) or within a matrix (124, 134) of an insulating oxide or an insulating nitride.Type: GrantFiled: June 30, 2016Date of Patent: February 2, 2021Assignees: CAMBRIDGE ENTERPRISE LIMITED, KING ABDULAZIZ CITY FOR SCIENCE & TECHNOLOGYInventors: Richard Henry Friend, Guangru Li, Dawei Di, Reza Saberi Moghaddam, Zhi Kuang Tan
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Patent number: 10910594Abstract: The present application relates to an encapsulation film, a method for manufacturing the same, a method for manufacturing an organic electronic device using the same, and an organic electronic device comprising the same, and provides an encapsulation film which allows forming a structure capable of effectively blocking moisture or oxygen introduced into the organic electronic device from the outside, and has excellent handleability and processability, and excellent bonding property between the encapsulation layer and the panel of the organic electronic device and endurance reliability.Type: GrantFiled: April 3, 2017Date of Patent: February 2, 2021Assignee: LG CHEM LTD.Inventors: Jung Woo Lee, Hyun Jee Yoo, Hyun Suk Kim, Jung Ok Moon, Se Woo Yang
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Patent number: 10903393Abstract: A transfer template, a display substrate, a display panel, and a method for manufacturing the same are provided in the embodiments of the disclosure, the transfer template being configured to transfer a material to be transferred, including: a transfer substrate; and a plurality of transfer units arranged on the transfer substrate and spaced apart from one another; an adhesive force between the plurality of transfer units and the material to be transferred is configured to be larger than another adhesive force between the transfer substrate and the material to be transferred.Type: GrantFiled: September 20, 2018Date of Patent: January 26, 2021Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventor: Boris Kristal
