Abstract: A plasma reaction chamber particularly configured for chemical vapor deposition of titanium nitride with a TDMAT precursor, the deposition including a plasma step. Gas is injected from a gas cavity in a showerhead electrode assembly through a large number of showerhead holes into the processing region over the wafer. The showerhead electrode is capable of being RF energized to create a plasma of a gas in the processing region. The showerhead electrode and other parts of the assembly are cooled by a cooling plate disposed above the gas cavity and connected to a rim of the showerhead electrode. A convolute water-cooling channel is formed in the cooling plate having a small cross section and numerous bends so as to create turbulent flow, thus aiding thermal transfer. The water cooling plate is connected to the showerhead electrode across a large horizontal interface, thus also aiding thermal flow.

Abstract: Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.

Abstract: The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced.

Abstract: An inductively coupled type dry etching apparatus has an RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has a matrix of alumina ceramic, and heat generating elements of a salt of a transition metal oxide, which are dispersed in the matrix and capable of self-generating heat by an RF electric field.

Abstract: A system and method for performing plasma etch on a spherical shaped device is disclosed. The system includes a processing tube for providing a reactive chamber for the spherical shaped substrate and a plasma jet is located adjacent to the processing tube. The plasma jet includes a pair of electrodes, such as a central cathode and a surrounding anode, for producing a plasma flame directed towards the reactive chamber. The central cathode may, for example, be powered by a radio frequency power source. As a result, the reactive chamber supports non-contact etching of the spherical shaped substrate by the plasma flame.

Abstract: A plasma etching apparatus is provided having a sealing member coupling an upper electrode to the plasma etching chamber. A peripheral portion of the inner surface of the upper electrode includes a planar surface across both anodized and non-anodized portions of the surface in the peripheral contact region adjacent to the upper portion of the sidewalls of the chamber assembly. A sealing member is positioned between the planar, peripheral portion of the second electrode and the upper portion of the sidewalls to provide a seal therebetween. The anodized portion of the inner surface of the upper electrode may extend over the area adjacent to the opening in the chamber housing and further extend into the peripheral portion beyond the sealing member to reduce the potential for arcing to occur to the non-anodized section during plasma etching operations.

Abstract: A plasma reactor showerhead electrode assembly for processing semiconductor wafers comprised of a typically silicon disk shaped gas plate having a plurality of gas passage holes therethrough, and a graphite circular split collar assembly including first and second semicircular sections forming a circumferential inner slot when opposing ends of said sections are secured together, the slot mating in a dovetail connection with an outer circumferential groove of said gas plate for retaining the latter between said sections. A conductive gasket may be interposed between the gas plate groove and the mating collar assembly to provide an electrically and thermally conductive seal. The first and second semicircular sections have opposing ends screwed or pinned together for providing easy disassembly thereof for replacement of the gas plate.