Abstract: A flat antenna is used for introducing a microwave into a process chamber so as to generate plasma within the process chamber. The flat antenna has a front surface to which the microwave is supplied and a back surface opposite to the front surface. The microwave is supplied to a center portion of the front surface and propagates in radial directions within the flat antenna. A plurality of openings are provided in the flat antenna so that each of the openings extends between the front surface and the back surface of the flat antenna. The contour of each of the openings is curved so as to prevent generation of an abnormal electrical discharge.

Abstract: A method for forming a micro cavity is disclosed. In the method for forming the cavity, a first layer is formed on a silicon layer and a trench is formed in the silicon layer by selectively etching the silicon layer. A second and a third layers are formed on the trench and on the silicon layer. Etching holes are formed through the third layer by partially etching the third layer. A cavity is formed between the silicon layer and the third layer after the second layer is removed through the etching holes. Therefore, the cavity having a large size can be easily formed and sealed in the silicon layer by utilizing the volume expansion of the silicon or the poly silicon layer. Also, a vacuum micro cavity can be formed according as a low vacuum CVD oxide layer or a nitride layer formed on the etching holes which are partially opened after the thermal oxidation process by controlling the size of the etching holes concerning the other portion of the poly silicon layer.

Abstract: A pulsed plasma doping system separates the plasma ignition function from the ion implantation function. An ignition voltage pulse is supplied to an ionizable gas and an implantation voltage pulse is applied to the target. The implantation voltage pulse can be generated from the ignition voltage pulse or can be generated separately from the ignition voltage pulse. Ions may be implanted in the target at an energy level that is below the Paschen curve for the system.

Abstract: To provide an evaporation source and an arc evaporation apparatus in which an evaporation material as a cathode of arc discharge, and a magnetic field generating source arranged so that all lines of magnetic force crossing the evaporation surface of the evaporation material cross substantially vertically are arranged whereby the number of molten particles arriving at a substrate by the magnetic field can be reduced, and deviation of occurrence of arc spots can be suppressed.

Abstract: A method of manufacturing a field emission element comprises steps of: (a) forming a base layer comprising a gate film being capable of chemical reaction accompanied by volume expansion; (b) forming an insulating film on said base layer; (c) forming a taper-shaped first hole in said insulating film; (d) forming a second hole in said gate film by anisotropically etching said gate film using said insulating film as a mask; (e) reacting a part of a surface layer of said gate film to form a volume-expanded film by chemical reaction; (f) forming an emitter film made of an electrically conductive material on said insulating film and said expanded film; and (g) exposing said emitter film and said gate film by removing unnecessary parts comprising said substrate and said expanded film.

Abstract: An apparatus for determining temperature of a semiconductor wafer during wafer fabrication is disclosed. The semiconductor wafer has a response circuit. The apparatus includes a signal transceiver for (i) transmitting an interrogation signal which excites the response circuit, and (ii) receiving a response signal generated by the response circuit. The apparatus also includes a processing unit electrically coupled to the signal transceiver. The apparatus also includes a memory device electrically coupled to the processing unit. The memory device has stored therein a plurality of instructions which, when executed by the processing unit, causes the processing unit to (a) operate the signal transceiver to (i) transmit the interrogation signal so as to excite the response circuit during fabrication of the semiconductor wafer, and (ii) measure the response signal generated by the response circuit, and (b) determine temperature of the semiconductor wafer based on the response signal of the response circuit.

Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.

Abstract: Device for processing a container (30) using a low pressure plasma, of the type having at least one processing station (14) comprising a fixed cavity (32) connected to a vacuum source by way of a vacuum circuit (74) and of the type in which processing station (14) has a mobile cover (34) equipped with means (54) for supporting container (30) such that the introduction of the container into cavity (32) is assured by displacement of cover (34) with respect to cavity (32), characterized in that cover (34) has a connecting channel (64) which, when cover (34) is in closed position sealing cavity (32) places cavity (32) in connection with a fixed end (68) of vacuum circuit (74).

Abstract: An apparatus for forming a high dielectric oxide film includes a controllable atomic oxygen source and a vaporized precursor source. A deposition chamber for receiving the atomic oxygen from the atomic oxygen source and vaporized precursor from the vaporized precursor source is used for deposition of the high dielectric oxide film on a surface of a structure located therein. The apparatus further includes a detection mechanism for detecting a characteristic of the deposition of the high dielectric oxide film on the surface of the structure. The controllable atomic oxygen source is controlled as a function of the detected characteristic.

Abstract: A flat antenna radiates a microwave toward a process chamber so as to generate a plasma within the process chamber. The flat antenna has a front surface to which the microwave is supplied and a back surface opposite to the front surface. The microwave is supplied to a center portion of the front surface and propagates in radial directions within the flat antenna. A plurality of openings extend between the front surface and the back surface of the flat antenna. A conductive member is located in each of the openings so that a circularly polarized microwave is radiated by each of the openings.

Abstract: In a plasma treatment system, the increase of the electric field of a treatment space facing the central portion of a flat antenna member is relieved, and the ununiformity of the density of plasma in a plasma forming region is relieved. Microwave generated by a microwave generator 50 are supplied from a waveguide 52 to a flat antenna member 44. The flat antenna member 44 has a plurality of slots 60. The space between adjacent two of the slots 60 is longer than the guide wavelength of microwaves in the waveguide 52, and the length of each of the slots 60 is shorter than half of the guide wavelength. The slots 60 are arranged in a region other than the central portion of the flat antenna member 44 so as not to be axisymmetric.

Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.

Abstract: An apparatus for surface modification of a polymer, metal, and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated is differentiated from that in a portion in which the ion beam is generated, and both-side irradiating processing and continuous processing is applicable.

Abstract: It is to provide an apparatus for producing a thin film, a process for producing a thin film and a guide roller, in which an arc resistant property is provided, and the film formation can be stably conducted with preventing damage of the thin film thus formed. In an apparatus for producing a thin film, such as a plasma CVD apparatus, comprising a vacuum chamber, means for generating a plasma in the vacuum chamber, means for introducing a gas to the vacuum chamber, and a guide roller for running a material to be treated by winding and supporting in the vacuum chamber, an outer peripheral surface of the guide roller in contact and sliding with the material to be treated comprises an electric conductor on both end parts in a width direction of the guide roller, and an electric insulator on a central part thereof.

Abstract: A novel batch processing system used, for example, in plasma etching and chemical vapor deposition, wherein the pressure in the reactor is cycled through a varying pressure to increase the transfer of the reactant materials to the center of the wafer. One version of the invention provides a method that includes the steps of (I) feeding reactant gases into a reaction vessel, (ii) exhausting unused reactive gases and/or reaction by-products from the reaction vessel, and (iii) cycling the pressure in the reaction vessel between a higher pressure Phigh and a lower pressure Plow. Another version of the invention provides an apparatus that comprises (I) a reaction vessel, (ii) a feed means for feeding reactive gases into the reaction vessel, (iii) an exhaust means for exhausting unused reactive gases and/or reaction by-products from the reaction vessel, and (d) a pressure control means for cycling the pressure in the reaction vessel between a higher pressure Phigh and a lower pressure Plow.

Abstract: An apparatus and method for providing a modulated-bias plasma are described. In particular, an RF source or collector includes one or more sources to provide differing driving frequencies or bias frequencies, respectively. These frequencies, over time, interfere with one another to produce beating at one or more controllable, infinitely variable beat frequencies. As a beat frequency has significantly fewer cycles per second than a driving or bias frequency, a modulated-bias plasma may be provided without turning power on and off as in conventional “pulsed” plasma systems. Beat frequencies facilitate modulation of the driving or bias frequencies, which may lie within a relatively narrow frequency band. Also, the use of a plurality of driving or bias frequencies facilitates use of more conventional RF sources or collectors owing to lower power requirements at each frequency.

Abstract: A plasma processing apparatus has a vacuum vessel, a high-frequency power generator that generates a high-frequency wave, a waveguide for propagating the high-frequency wave generated by the high-frequency power generator into the vacuum vessel to produce a plasma by ionizing a processing gas supplied into the vacuum vessel and to process a semiconductor wafer supported on a support table in the vacuum vessel. A reflection coefficient measuring unit 5 is combined with a waveguide 35 to take data on a ratio &Ggr;0 of advancing wave from the high-frequency power generator 4 and reflected wave from the plasma and phase &thgr; of reflection coefficient. Factors dominating the electron density of the plasma including the output power of the microwave power generator are controlled on the basis of the measured data, whereby the electron density is controlled and stable processing is ensured.

Abstract: An ECR plasma apparatus is formed of a vacuum chamber, a cavity disposed at a side surface of the vacuum chamber to which microwave is introduced, an electromagnetic coil disposed around the cavity, and a case member made of a conductive material having the same electric potential as that of the cavity. The case member is disposed in the vacuum chamber adjacent the cavity to supplement resonance operation in the cavity. Thus, the cavity and the electromagnetic coil disposed therearound can be miniaturized and lightened in weight.

Abstract: A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.

Abstract: An apparatus and a method for preventing particle contamination in a plasma etch chamber equipped with a middle chamber by residual etchant gas is provided. In the apparatus, a bypass exhaust conduit is provided for connecting between a middle chamber cavity and a main chamber cavity such that when a pump means is turned on to evacuate the main chamber cavity, any residual etchant gas in the middle chamber cavity can be rapidly evacuated without the dancer of causing metal corrosion in the middle chamber cavity. Any chamber contamination caused by the metal corrosion can thus be avoided.