Abstract: The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular to the workpiece surface. It is a feature of the invention to control the electron temperature near the surface of the workpiece by controlling the applied magnetic field. It is a further feature to increase average ion density near the workpiece without otherwise causing damage to the workpiece due to uneven charge build-up. The applied magnetic field can be time invariant or time variant. In both cases processing can be optimized by adjusting the magnitude of the magnetic field to a level just below where damage due to uneven charge build-up occurs. With the time variant field, the average ion density can be adjusted with respect to average electron temperature.

Abstract: There is disclosed herein a multilayer circuit board having air bridge crossover structures and a subtractive method for producing the same, wherein the circuit includes specially designed metallic fortifying layers which provide mechanical and/or electrical fortification to the circuit.

Abstract: A plasma reactor showerhead electrode assembly for processing semiconductor wafers comprised of a typically silicon disk shaped gas plate having a plurality of gas passage holes formed therethrough by a ultrahigh velocity water jet boring apparatus, and a graphite circular split collar assembly including first and second semicircular sections forming a circumferential inner slot when opposing ends of said sections are secured together, the slot mating in a dovetail connection with an outer circumferential groove of said gas plate for retaining the latter between said sections. A conductive gasket may be interposed between the gas plate groove and the mating collar assembly to provide an electrically and thermally conductive seal. The first and second semicircular sections have opposing ends screwed or pinned together for providing easy disassembly thereof for replacement of the gas plate.

Abstract: The present invention provides an improved aluminum chloride trap having a disposable element, wherein the disposable element contains trapping media for condensing, solidifying and trapping condensable aluminum chloride vapor. The trap is designed such that the disposable element may be easily removed for rapid and safe disposal of condensed aluminum chloride solids and subsequently replaced with a new disposable element. The disposable element efficiently traps condensable aluminum chloride vapor from an aluminum etch system without the need for internal or external cooling means, such that condensable aluminum chloride vapor is prevented from condensing and depositing on the interior walls of the trap or on the interior walls of a vacuum conduit system used in an aluminum etch system.

Abstract: An end point window assembly in an etching apparatus includes an end point bracket having an inducing tube connected to an optic cable. The end point bracket is connected to a process chamber of the etching apparatus and a main window is provided to cut off a gap between the optic cable and the process chamber. The end point window assembly further includes at least a spare window insertion groove between the main window and the process chamber about the inner circumference of the inducing tube. A spare window guiding groove corresponding in location to the spare window insertion groove is connected to and tunnelled through an inside of a body of the end point bracket, a spare window is displacably movable between the spare window insertion groove and the window guiding groove wherein the spare quartz window selectively closes the inducing tube, and a moving mechanism for transferring the spare window along the spare window guiding groove in accordance with an extent of contamination of the spare window.

Abstract: 053825006 A plastic molding unsealing apparatus includes: a first chemical liquid feeding device to take out each desired chemical liquid with a desired amount from chemical liquid bottles of at least two kinds; a liquid receiving container to temporarily receive the chemical liquid taken out by the first chemical liquid feeding device; a second chemical liquid feeding device to take out the chemical liquid from the liquid receiving container with predetermined amount; a heating device to heat the chemical liquid taken out by the second chemical liquid feeding device; and a chemical liquid injecting section to inject the chemical liquid heated by the heating device onto a sample which has been sealed to be molded with plastic. In the construction, a plastic portion of the sample is dissolved and unsealed to be unsealed, and the chemical liquid injecting section recovers drain liquid of the heated chemical liquid.

Abstract: An apparatus for manufacturing information recording disks is disclosed. The apparatus includes a deposition chamber for providing an undercoat layer to a substrate to be treated, a deposition chamber for providing a magnetic recording layer on the substrate, a deposition chamber for providing a protective layer over the recording layer and a holding chamber for removing the resulting information recording disk upon completion of the process steps. The deposition chamber which provides the protective layer includes a system which selectively introduces heated plasma and oxygen into the interior of the deposition chamber to clean the interior surfaces of the chamber while the apparatus is in use. The heated plasma and oxygen interact with any excess protective layer material, resulting in the formation of a gas which is removed from the interior of the deposition chamber by a pumping system.

Abstract: Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes.

Abstract: In a heat treatment system for heating a semiconductor wafers, around a processing chamber is defined an enclosed heating chamber that can be either filled with gases or evacuated. The heater elements consist of halogen infrared lamps received in concentric grooves having a mirror surface. It is therefore possible to achieve a favorable heat insulation which contributes to a high heat efficiency. When the heating chamber is filled with gases or air, it is possible to achieve a controlled rapid cooling of the processing chamber, and this contributes to a short turnaround time of the heat treatment system.

Abstract: A substrate to be coated with a thin film is placed inside a vacuum chamber, an ECR plasma is generated and introduced into the vacuum chamber by means of a specified magnetic field generated inside the vacuum chamber and a reaction gas, as well as an inert gas, is introduced into the vacuum chamber while a negative DC voltage superposed with a high-frequency pulse with frequency 25-250 kHz is applied to the substrate by a voltage applying device such that the voltage of the substrate reaches a positive value instantaneously. The frequency of the superposed pulse is selected by using an ammeter to determine an optimum frequency for minimizing the load current of the voltage-applying circuit.

Abstract: In order to conduct ashing, etching or cleaning of an article to be processed to remove unnecessary matters therefrom and achieve a high processing rate and less charge-up damage by continuously forming negative ions at a high density and making the negative ions incident on the article, a plasma processing apparatus comprises a vacuum vessel, a supporting device for supporting an article to be processed in the vacuum vessel, a device for introducing a first gas into a plasma generating space, a device for feeding electric energy to the first gas in the plasma generating space to generate a plasma, a device for mixing a second gas into the plasma which has been introduced into a negative ion forming space communicating with the plasma generating space, thereby forming negative ions, and a device for drawing out the negative ions therefrom and feeding the negative ions to the article.

Abstract: A method of etching an oxide layer in a plasma etching reactor is disclosed. The method includes the steps of providing a semiconductor substrate including the oxide layer into the plasma etching reactor and flowing an etching gas that includes a fluorocarbon gas, a nitrogen reactant gas, an oxygen reactant gas, an inert carrier gas, and a hydrogen-containing additive gas into the plasma etching reactor. The method further includes etching an opening at least partially through the oxide layer using a plasma that is formed from the etching gas.

Abstract: A dynamic blending gas delivery system and method are disclosed. A blended gaseous mixture produced in accordance with the method is used in chemical vapor deposition tools or similar process tools. One embodiment is a multi-step method for processing a plurality of fluids to form a blended gaseous mixture and supplying the blended gaseous mixture to a distribution header from which the blended gaseous mixture is delivered to at least one tool. The first step is to supply a first fluid. The second step is to heat the first fluid to a temperature where at least some portion of the first fluid is a vapor. The third step is to superheat the vapor portion of the first fluid to a temperature sufficient to avoid condensation of the blended gaseous mixture delivered to the at least one tool. The fourth step is to supply a second fluid.

Abstract: A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.

Abstract: A plasma processing apparatus having a vacuum vessel and a supporting means for supporting a processing target in the vacuum vessel, the apparatus comprising means for introducing a gas into a plasma generating space, means for feeding electric energy to the gas in the plasma generating space to generate a plasma, a metal member for forming negative ions which is provided on the downstream side of the plasma generating space in such a way that it comes into contact with particles of the plasma, and means for feeding the negative ions to the processing target. Utilizing the electric charge exchange reaction between plasma particles and metal surfaces, negative ions can be formed continuously and in a high density and also the negative ions can be made incident on a processing target to make ashing, etching or cleaning of the processing target to remove unwanted matter therefrom, so that a high processing rate and less charge-up damage can be achieved.

Abstract: A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

Abstract: A method and system for determining a dry etching endpoint, at which a dry etching process should be terminated. The dry etching process is carried out in a plasma etching system and comprises the steps of detecting an intensity of light emission generated in the dry etching process, the light emission being extracted through a window located on a side wall portion of a reaction chamber below a horizontal plane which is defined by a surface of a body to be etch treated. The detected intensity is compared to a predetermined threshold level.

Abstract: A modulator for regulating high voltage pulsed plasma-immersion ion implantation (PIII) acting as a substantial component in a PIII installation is provided. The modulator enables low-cost, easy connection and disconnection of a flow of large high voltage pulsed currents during PIII. In the modulator, pulse regulation occurs by means of an additional electrode which is controlled by a shielding grid as opposed to a high voltage switch mounted as a technically autonomous unit. The electrode and shielding grid are integrated into the implantation chamber and connected to a capacitor to provide high voltage. The shielding grid is triggered by a pulse generator with voltage pulses of 1-2000 V. The shielding grid surrounding the electrode is immersed in plasma and ensures that the additional electrode is either insulated from the plasma or in electric contact therewith by applying controllable grid voltages.

Abstract: A TEOS trap for controlling TEOS polymerization from reaction furnace effluent in a vacuum pump line a SiO2 CVD process includes a molecular species-selective flow impeding medium that adsorbs and retains TEOS and water molecules from the effluent long enough to consume substantially all the water molecules in TEOS hydrolysis reactions while allowing non-hydrolyzed TEOS, ethylene, and other gaseous byproducts to pass through the trap and retaining solid and liquid phase SiO2-rich TEOS polymers formed by the hydrolysis reactions in the trap for subsequent removal and disposal. The molecular species-selective flow impeding medium has a plurality of adsorption surfaces to make a surface density that performs the TEOS and water flow impeding fuction and solid and liquid phase TEOS polymer trapping function.

Abstract: The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (100) for a substrate processing chamber includes an antenna coil (102) disposed in a frame (104). The frame includes a plurality of spaced apart tabs (120) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (122) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.