Abstract: The invention concerns a device for exciting a gas comprising a hollow structure (24) forming a waveguide to be connected to a microwave generator and means for circulating a gas through the structure. The gas circulating means comprise an assembly of at least two hollow tubes (46, 48) made of dielectric material respectively passing through said structure (24) in the zones wherein the amplitude of the electric field associated with the incident wave is substantially the same.

Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.

Abstract: The apparatus for coating or treating a substrate in a remote plasma CVD process includes a reaction chamber for the substrate; modular plasma source devices for exciting an excitation gas, preferably with microwaves, to form a plasma in the excitation gas arranged, either in a linear arrangement or in a two-dimensional planar array, over the substrate; devices for conducting a reactant gas over the substrate in the reaction chamber and for mixing the excitation gas containing the plasma with the reactant gas in the reaction chamber in the presence of the substrate and a device for removing exhaust gas from the reaction chamber. A device is provided for moving the substrate relative to the plasma source devices in a motion direction at an angle to the long axis of the arrangement or array of plasma source devices to minimize edge effects.

Abstract: A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

Abstract: A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

Abstract: A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.

Abstract: A device for reducing the contamination of a disc being coated during an ion beam deposition process. The ion beam deposition process is performed in a chamber having an upper portion and a lower portion with the disc being disposed in the lower portion of the chamber. An ion source is introduced into the lower chamber for generating an ion beam for depositing ions on the disc. In the upper portion of the chamber is a pump for creating negative pressure in the chamber. A portion of the ion beam contacts the pump forming contaminants on the pump which cause the contamination of the disc. A baffle assembly is disposed in the chamber between the pump and the ion source. Said baffle assembly includes a baffle that reduces the portion of the ion beam contacting said pump thereby reducing the forming of contaminants on the pump.

Abstract: A plasma CVD system has a reactor which can be evacuated, a substrate holding means in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying an electrode high-frequency power of 30 MHz to 600 MHz, generated by a high-frequency power source, and means for exhausting gas remaining in the reactor after the reaction. The high-frequency power is supplied to produce a plasma across a substrate in the reactor to form a deposited film on the substrate, and the phase of reflected power is adjusted on the electrode at a side opposite the feeding point. High-quality deposited films having very uniform film thickness and homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes.

Abstract: A method of producing an ink jet head valve for an ink jet head having a discharge port for discharging ink, an ink flow path communicated with said discharge port and an electrothermal converting member used as an energy generating means for discharging ink into said ink flow path, comprises the step of producing said ink jet head valve by a metal CVD process.

Abstract: A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

Abstract: A constriction in the exhaust side of a discharge chamber containing oxygen isolates the oxygen supply from the rest of the system. A constriction of equal size or larger is used in the supply of another gas, thereby enabling mixtures of oxygen and other gases to be used in a downstream plasma system. In one embodiment of the invention, the gases are dissociated separately and then combined in a mixing chamber. In another embodiment, oxygen is dissociated and then a lighter gas is added and the mixture is dissociated. In a preferred embodiment of the invention, the lighter gas is selected from the group consisting of water vapor and nitrogen.

Abstract: A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly efficient radical generation. In the illustrated embodiments, more efficient delivery of oxygen and fluorine radicals translates to more rapid photoresist etch or ash rates. A single-crystal, one-piece sapphire applicator and transport tube minimizes recombination of radicals in route to the process chamber and includes a bend to avoid direct line of sight from the glow discharge to the downstream process chamber. Microwave transparent cooling fluid within a cooling jacket around the applicator enables high power, high temperature plasma production. Additionally, dynamic impedance matching via a sliding short at the terminus of the microwave cavity reduces power loss through reflected energy. At the same time, a low profile microwave trap produces a more dense plasma to increase radical production.

Abstract: The present invention recognizes that reactions between processing liquids is a major source of residue which clogs gas delivery systems. To avoid reactions between or among vaporized processing liquids, an inventive gas delivery system provides parallel delivery of vaporized processing liquids. The gas delivery system may be configured using any conventional vaporizing mechanism such as bubblers or injection valves. Preferably, liquid precursors TEPO, TEOS and TEB are vaporized in parallel within three injection valves, the vaporized processing liquids then are flowed into a common line and delivered to a chemical vapor deposition chamber for processing semiconductor wafers. In the unlikely event the line becomes clogged, the line can be easily replaced. Most preferably a single source of carrier gas controlled by a single mass flow controller supplies carrier gas to all three injection valves.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive, so that the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is such that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. The direction of rotation of the first and/or second drive changes during processing to improve processing uniformity. The article is allowed to be processed with the plasma only during one-half of each revolution of the second drive.

Abstract: The present invention comprises the electrode assemblies themselves as well as improved plasma plate. The plasma side of the plate is counter bored in the area of the gas inlet holes to an appropriate depth. On the opposite side of the plate, another set of bores are placed around the outsides of the gas inlet feed throughs. These bores are machined to incorporate a set of metallic sleeves. The counter bore on the plasma side of the ceramic is used as the first step in removing the plasma from the ceramic surface. The metallic sleeves are utilized to prevent the plasma from invading the counter bore and touching the surface and to allow the surface to remain electrically uniform and planar to the substrate being etched. The sleeves create a negative charge close to the surface of the ceramic surface but not exposed to the plasma to create a dark space. The dark space mimics an electrically planar surface for the substrate while keeping the hot plasma from direct contact with the ceramic surface.

Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (≳1011cm−3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts.

Abstract: In processing the surface of a substrate 2 that is held with its under-surface in contact with a substrate holder 3 in a vacuum chamber 1, the temperature of substrate 2 is controlled by supplying a heat-conductive gas between the substrate 2 and substrate holder 3. Supply and evacuation of the heat-conductive gas are effected rapidly at high flow rate from both supply line 18 and evacuation line 19 using bypass lines 17a, 17b, while pressure regulation is effected with a low flow rate.

Abstract: A wafer flattening process designed to flatten the entire surface of the wafer to a higher precision by projecting the fall in the etching rate at the outer peripheral portion of the wafer and forming the outer peripheral portion of the wafer thinner in advance before plasma etching the entire surface of the wafer, a wafer flattening system, and a wafer flattened by the same. The wafer flattening system is provided with a CMP apparatus 1 and a plasma etching apparatus 2 are provided. The outer peripheral portion Wb of a wafer W held by a carrier 11 is polished thinner than an inside portion Wc of the wafer W by the CMP apparatus 1 having a platen 10 formed with a recessed surface. Specifically, it is polished so that the maximum thickness at the outer peripheral portion Wb of the wafer W becomes not more than the minimum thickness at the inside portion Wc.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.