Abstract: A method and apparatus for cleaning semiconductor wafers, next generation lithography (NGL) masks, and optical photomasks as well as test wafers and in service NGL and optical masks is disclosed. The method and apparatus utilize reactive gases and gas mixtures and mechanical agitation to enhance particle removal. The addition of a reactive gas process to an inert gas feed enhances the plasma cleaning process by breaking chemical bonds which form between surface particles and a substrate, consequently improving cleaning efficiency.

Abstract: Deposition of ionized material at a beveled or non-flat edge of a semiconductor wafer and the etching by the ionized material at such edge is controlled in a high density plasma processing machine by surrounding the wafer with a conducting ring to affect sheath potential and deflecting the ions of the material in such a way that the deposition and etching rate changes in a controlled way over the region immediately adjacent the wafer edge. The ring may be biased in several ways to control the ion flux to the wafer edge.

Abstract: A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.

Abstract: An apparatus for and a method of introducing a gas into a vacuum processing chamber are provided. In one aspect, a processing apparatus is provided that includes a vacuum processing chamber, a first source of gas coupled to the vacuum processing chamber, and a fluid actuated valve for regulating the flow of the gas from the first source of gas to the vacuum processing chamber. The fluid actuated valve is operable to open in response to a flow of an actuating fluid and has a minimum valve opening pressure. A valve is provided for enabling the actuating fluid to flow to the fluid actuated valve. A controller is provided for selectively modulating the flow of the actuating fluid to the fluid actuated valve whereby the pressure of the actuating fluid is increased incrementally from an initial pressure to at least the minimum valve opening pressure. The apparatus reduces the risk of troublesome gas bursts in vacuum processing chambers.

Abstract: An electron beam physical vapor deposition (EBPVD) apparatus and a method for using the apparatus to produce a coating material (e.g., a ceramic thermal barrier coating) on an article. The EBPVD apparatus generally includes a coating chamber that is operable at elevated temperatures and subatmospheric pressures. An electron beam gun projects an electron beam into the coating chamber and onto a coating material within the chamber, causing the coating material to melt and evaporate. An article is supported within the coating chamber so that vapors of the coating material deposit on the article. The operation of the EBPVD apparatus is enhanced by the inclusion of a crucible that supports the coating material and is configured to be efficiently cooled so as to reduce the rate at which the process temperature increases within the coating chamber.

Abstract: A cluster tool includes a block which is formed with an inner high vacuum chamber, at least two loadlock chambers that are in fluid communication with the high vacuum chamber, and at least two slot valves for selectively isolating each loadlock chamber from the high vacuum chamber. The cluster tool also includes a high vacuum pump that is connected to the high vacuum chamber and a water pump comprising a refrigeration unit and a cryoplate. The cryoplate is cooled by the refrigeration unit and projects into the high vacuum chamber between the loadlock chambers. Selective operation of the slot valves allows a single water pump to serve a plurality of loadlock chambers. Each loadlock chamber includes a refrigerated platen that projects into the loadlock chamber, a heat lamp assembly that radiates into the loadlock chamber, and a tray for holding the wafer therein. The platen has a cooling system for selectively cooling the wafer, and selective radiation of the heat lamp assembly degasses the wafer.

Abstract: Apparatus and methods for producing semiconductor devices are disclosed. A processing chamber includes an interior component having a stepped region including a plurality of raised sections and recessed sections divided by steps. With this apparatus, it is possible to prevent a film of deposited material formed on the stepped region from peeling, thereby decreasing the number of particles in the chamber and increasing the operation rate.

Abstract: The present invention is an apparatus for operating heat processing to a substrate, and comprises a heating plate to mount and heat the substrate thereon, a supporting member to support a lower surface of a periphery of the heating plate, and a supporter to support the supporting member. The supporting member has a stepped portion to surround an outer peripheral surface of the heating plate. The supporting member is fixed to the supporter by a fixing member penetrating through the stepped portion in a vertical direction. The fixing member is provided between an inner peripheral surface of the stepped portion and the outer peripheral surface of the heating plate. According to the present invention, since the fixing member is provided between the outer peripheral surface of the heating plate and the inner peripheral surface of the stepped portion, the supporting member does not exist between the fixing member and the outer peripheral surface of the heating plate.

Abstract: Apparatus and methods for producing semiconductor devices are disclosed. A processing chamber includes an interior component having a stepped region including a plurality of raised sections and recessed sections divided by steps. With this apparatus, it is possible to prevent a film of deposited material formed on the stepped region from peeling thereby decreasing the number of particles in the chamber and increasing the operation rate.

Abstract: An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Abstract: A baffle plate assembly (12) is provided for distributing gas flow into an adjacent process chamber cavity (20) containing a semiconductor wafer to be processed. The baffle plate assembly (12) comprises a generally planar upper baffle plate (14) fixedly positioned above a generally planar lower baffle plate (16) and covered by a process chamber top wall (17). The top wall (17) and the lower baffle plate form a plenum therebetween, the plenum operating at a higher pressure than the process chamber cavity (20) during operation of the device, At least the lower baffle plate (16) has a pattern of apertures (30) formed therein for permitting gas to pass therethrough and into the wafer process chamber. The upper baffle plate (16) and the lower baffle plate (14) are positioned generally parallel to each other, and the upper baffle plate (14) is smaller than the lower baffle plate (16).

Abstract: Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas.

Abstract: A plasma processing apparatus includes a processing container whose interior has a mount table, a glass plate for covering an upper opening of the processing container, a microwave supplier, a coaxial waveguide having its end connected with the microwave supplier to have an inner conductor and an outer conductor, a radial waveguide box connected to the other end of the outer conductor of the coaxial waveguide to expand from the other end of the outer conductor outward in the radial direction and extend downward, a disc-shaped antenna member for covering a lower opening of the radial waveguide box having its central part connected with the other end of the inner conductor, and a metallic reflector on the opposite side of the antenna member's part connected with the inner conductor.

Abstract: A pulsed plasma doping system separates the plasma ignition function from the ion implantation function. An ignition voltage pulse is supplied to an ionizable gas and an implantation voltage pulse is applied to the target. The implantation voltage pulse can be generated from the ignition voltage pulse or can be generated separately from the ignition voltage pulse. Ions may be implanted in the target at an energy level that is below the Paschen curve for the system.

Abstract: A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.

Abstract: A chamber material made of Al alloy excellent in thermal cracking resistance and chemical and/or physical corrosion resistance and capable of reducing contamination excellently and further having excellent and wide applicable brazing property in a high temperature corrosive circumstance, in which the substrate aluminum material for the chamber material made of Al alloy having an anodized film comprises 0.1 to 2.0% Si, 0.1 to 3.5% Mg, 0.02 to 4.0% Cu on the mass% basis and the balance of Al and impurity element with Cr in the impurity elements being less than 0.04%. Preferably, Fe is 0.1% or less and Mn is 0.04% or less in the impurity element and, further, the total sum of impurity elements other than Cr and Mn being restricted to 0.1% or less. This invention can be utilized suitably to various materials used in high temperature corrosive circumstance, particularly, in high temperature corrosive gas or plasma atmosphere.

Abstract: A preferred embodiment of the plasma reactor of the present invention provides a chamber adapted to process a workpiece having at least one wall capable of allowing inductive power coupling into the reactor chamber. A source power antenna, capable of generating a processing plasma, confronts a portion of the at least one wall. A dry clean antenna is located adjacent the chamber beside a portion of the at least one wall not confronted by the source power antenna. During workpiece processing, the dry clean antenna preferably has essentially a floating potential. After workpiece processing has ceased, a dry clean plasma may be generated by inductive coupling using the dry clean antenna. Embodiments of the present invention allow dry clean plasma characteristics to be optimized to improve dry clean effectiveness. The source power antenna also may couple power to the dry clean plasma, preferably in parallel with the dry clean antenna.

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.

Abstract: An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

Abstract: A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.