Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.

Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber.

Abstract: A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gas-fill and stability due to the lack of free fluorine in the film.

Abstract: The invention relates to an apparatus for performing Plasma Chemical Vapor Deposition (PCVD), whereby one or more layers of silica can be deposited on an elongated vitreous substrate, the apparatus comprising an elongated microwave guide which emerges into a resonant cavity which is substantially cylindrically symmetric about a cylindrical axis, along which axis the substrate can be positioned, in which apparatus: the cavity is substantially annular in form, with an inner cylindrical wall and an outer cylindrical wall; the inner cylindrical wall comprises a slit which extends in a full circle around the cylindrical axis; the guide has a longitudinal axis which is substantially perpendicular to the cylindrical axis and which does not intercept the slit. The invention also relates to a method of manufacturing an optical fiber, a preform rod and a jacket tube using said apparatus as well as to the thus obtained optical fiber.

Abstract: In manufacturing a thin-film transistor on a glass substrate, a first thin film consisting of an amorphous silicon thin film is formed on the glass substrate, and a second thin film is formed on the first thin film. Then, this second thin film is etched to form a mask pattern. A dopant ion is doped into the first thin film through the mask pattern to form a source region and a drain region. The process of forming the mask pattern and the process of forming the source and drain regions are carried out continuously without exposing the substrate to the atmosphere.

Abstract: High voltage feedthrough connectors provide a means for isolating high voltage through a reactor housing while providing thermal expansion tolerance along with ease of assembly. The connectors provide an insulating body having a bore extending axially through said insulating body for housing a center conductor, a threaded shell assembly for engaging the insulating body and securing the insulating body to a NTP reactor housing, and a gas tight seal to prevent gas leaks to the center conductor. The center conductor includes a first end for contacting a high voltage source and a second end for contacting a high voltage electrode of a NTP reactor. In one embodiment, a fixed center conductor is provided. Preferably, a dome shaped tip may be provided on the bottom terminal connector for improved contact with the non-thermal plasma reactor high voltage electrode. Optionally, a compression spring is attached to the bottom terminal connector end of the fixed center conductor.

Abstract: A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.

Abstract: A plasma assisted semiconductor substrate processing chamber having a plurality of electrically conductive bridges for preventing electrical arcing in the chamber. More particularly, the chamber has a plurality of electrically conductive bridges that connect a portion of a substrate support member with a portion of the chamber walls.

Abstract: A sub-atmospheric chemical vapor deposition (“SACVD”) system with a bypass from a dopant source to an exhaust system and related methods and devices. The flow of dopant may be established by dumping the dopant flow directly to the foreline of a vacuum exhaust system of an SACVD system, rather than flowing the dopant through the chamber. Establishing the dopant flow in this manner prior to the deposition of a silicon glass film on a substrate allows the initial portion of the silicon glass film to be doped at a higher level. Prior apparatus resulted in a dopant-deficient region of silicon glass formed before the dopant was fully flowing. In one embodiment, a doped silicon glass film is used as a dopant source for a semiconductor material, in another embodiment, a multi-layer doped silicon glass film achieves superior reflow.

Abstract: A TEOS trap for controlling TEOS polymerization from reaction furnace effluent in a vacuum pump line a SiO2 CVD process includes a molecular species-selective flow impeding medium that adsorbs and retains TEOS and water molecules from the effluent long enough to consume substantially all the water molecules in TEOS hydrolysis reactions while allowing non-hydrolyzed TEOS, ethylene, and other gaseous byproducts to pass through the trap and retaining solid and liquid phase SiO2-rich TEOS polymers formed by the hydrolysis reactions in the trap for subsequent removal and disposal. The molecular species-selective flow impeding medium has a plurality of adsorption surfaces to make a surface density that performs the TEOS and water flow impeding function and solid and liquid phase TEOS polymer trapping function.

Abstract: A microwave plasma processing apparatus has a process chamber in which an object to be processed is subjected to plasma processing under a predetermined negative pressure environment. A susceptor holding the object thereon is provided in the process chamber. The susceptor is moved by a susceptor moving member which is moved by a susceptor moving mechanism located outside the process chamber. The susceptor moving member extends from the process chamber via a bellows provided to a bottom of the process chamber. The bellows allows a vertical movement of the susceptor moving member while providing a hermetic seal to the process chamber to maintain the predetermined negative pressure environment in the process chamber. A vacuum pump is provided to the bottom of the process chamber so that an inlet opening of the vacuum pump aligns with the susceptor in the vertical direction.

Abstract: Simplified continuous processes are disclosed for converting standard woven or nonwoven fabric into reflectorized fabric in a continuous fashion and in bulk quantities. These processes are easily capable of achieving reflectivities of well over 100 cd/(lux·m2). In the processes, an extended length of fabric is provided such as by unwinding an input roll of fabric to be reflectorized, and the fabric is passed through a station that applies a coating of binder material to the fabric. The fabric then passes through a station where aluminum-coated beads are applied to the coating of binder material. An etching station removes exposed portions of the aluminum coating from the beads after the binder material is allowed to substantially solidify. End-use materials other than fabrics but suitable for enhancing personal conspicuity can be reflectorized in the same way.

Abstract: The present invention, in one embodiment, provides a method for eliminating agglomerate particles in a polishing slurry. In this particular embodiment, the method is directed to reducing agglomeration of slurry particles within a waste slurry passing through a slurry system drain. The method comprises conveying the waste slurry to the drain, wherein the waste slurry may form an agglomerate having an agglomerate particle size. The method further comprises subjecting the waste slurry to energy emanating from an energy source. The energy source thereby transfers energy to the waste slurry to substantially reduce the agglomerate particle size. Substantially reduce means that the agglomerate is size is reduced such that the waste slurry is free to flow through the drain.

Abstract: A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly efficient radical generation. In the illustrated embodiments, more efficient delivery of oxygen and fluorine radicals translates to more rapid photoresist etch or ash rates. A single-crystal, one-piece sapphire applicator and transport tube minimizes recombination of radicals in route to the process chamber and includes a bend to avoid direct line of sight from the glow discharge to the downstream process chamber. Microwave transparent cooling fluid within a cooling jacket around the applicator enables high power, high temperature plasma production. Additionally, dynamic impedance matching via a sliding short at the terminus of the microwave cavity reduces power loss through reflected energy. At the same time, a low profile microwave trap produces a more dense plasma to increase radical production.

Abstract: A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter contains a ceramic compound (e.g. Al2O3) and an oxide of a Group IIIB metal (e.g., Y2O3). A method for processing (e.g. etching) a substrate in a chamber containing a plasma of a processing gas. The method includes passing processing power through a dielectric window which is formed from the ceramic composition of matter.

Abstract: For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.

Abstract: In a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, a furnace tube port gas introducing pipe (9) for supplying gas to only one end portion of a furnace tube (2) is provided separately from a process gas introducing pipe (5) for supplying process gas into the furnace tube (2), and when wafers (4) are inserted into the furnace tube (2), an oxygen atmospheric layer (11) is formed only at the furnace tube port by oxygen gas or oxygen gas diluted with nitrogen gas which is supplied from the furnace tube port gas introducing pipe (9).

Abstract: In the plasma processor, the microwaves generated from a microwave generator (86) are led to a plane antenna (62), which in turn introduces exponentially attenuating microwaves into a container (22) that processes an object (W) in plasma. Microwave absorption device (96) provided in the circumference of the plane antenna (62) absorbs microwaves propagating from the center of the plane antenna (62) and suppresses the reflection. As a result, the microwaves reflected in the circumference of the plane antenna (62) and returned to the center are decreased to some degree, and the electromagnetic field distribution of the microwave becomes uniform.