Patents Examined by Raj R Gupta
  • Patent number: 12288822
    Abstract: A semiconductor device includes a substrate, an epitaxial structure over the substrate, a conductive structure, and a dielectric liner. The conductive structure extends from within the epitaxial structure to above the epitaxial structure. The dielectric liner extends along a sidewall of the conductive structure. The dielectric liner has a top end capped by the conductive structure.
    Type: Grant
    Filed: June 21, 2023
    Date of Patent: April 29, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Che Tsai, Min-Yann Hsieh, Hua-Feng Chen, Kuo-Hua Pan
  • Patent number: 12283614
    Abstract: Provided is a semiconductor device including: a substrate containing a semiconductor material; an electrode provided on a substrate surface of the substrate, the electrode containing a metal material; and a mixed member provided on the substrate surface to be in contact with the electrode, the mixed member containing the semiconductor material and the metal material, in which a portion of the substrate surface is exposed at an end of the substrate.
    Type: Grant
    Filed: January 10, 2024
    Date of Patent: April 22, 2025
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Shinji Onduka, Akira Ezaki
  • Patent number: 12279511
    Abstract: A display panel, a mask used for evaporation, a mask assembly and a manufacturing method thereof are provided. The display panel includes: a base substrate; and a display area and a peripheral area; wherein, the peripheral area is provided with two types of dummy sub-pixel units, each type of dummy sub-pixel unit includes a dummy light-emitting material layer and a dummy auxiliary light-emitting layer, wherein, a first structure layer of a first dummy light-emitting material layer and a first dummy auxiliary light-emitting layer is arranged in the same layer as a second structure layer of a second dummy light-emitting material layer and a second dummy auxiliary light-emitting layer, and at least one of a size and a shape of an orthographic projection of the second structure layer on the base substrate is different from that of an orthographic projection of the first structure layer on the base substrate.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: April 15, 2025
    Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yong Zheng, Wenbiao Ding, Junxiu Dai, Chunyan Gao
  • Patent number: 12279535
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.
    Type: Grant
    Filed: November 16, 2023
    Date of Patent: April 15, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Ya-Sheng Feng
  • Patent number: 12255244
    Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.
    Type: Grant
    Filed: February 20, 2023
    Date of Patent: March 18, 2025
    Assignees: Samsung Electronics Co., Ltd, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Minhyun Lee, Minsu Seol, Ho Won Jang, Yeonchoo Cho, Hyeonjin Shin
  • Patent number: 12218189
    Abstract: A semiconductor device includes a drift region, a dielectric film, and an anti-type doping layer. The drift region has a first type conductivity. The anti-type doping layer is located between the drift region and the dielectric film, and has a second type conductivity opposite to the first type conductivity so as to change a current path of a current in the drift region, to thereby prevent the current from being influenced by the dielectric film. A method for manufacturing a semiconductor device and a method for reducing an influence of a dielectric film are also disclosed.
    Type: Grant
    Filed: November 24, 2023
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Fu Lin, Tsung-Hao Yeh, Chih-Wei Hung
  • Patent number: 12218203
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate and spanning between a first sidewall of a first shallow trench isolation (STI) feature and a second sidewall of a second STI feature; an anti-punch through (APT) feature of a first type conductivity; and a channel material layer of the first type conductivity, disposed on the APT feature and having a second doping concentration less than the first doping concentration. The APT feature is formed on the fin active region, spans between the first sidewall and the second sidewall, and has a first doping concentration.
    Type: Grant
    Filed: July 27, 2023
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Yi Peng, Ling-Yen Yeh, Chi-Wen Liu, Chih-Sheng Chang, Yee-Chia Yeo
  • Patent number: 12211838
    Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.
    Type: Grant
    Filed: August 10, 2023
    Date of Patent: January 28, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Li-Hsin Chu, Chia-Ping Lai, Chung-Chuan Tseng
  • Patent number: 12211886
    Abstract: Structures including an inductor and methods of forming such structures. The structure comprises a semiconductor substrate including a first plurality of sealed cavities and a back-end-of-line stack on the semiconductor substrate. Each sealed cavity includes an air gap, and the back-end-of-line stack includes an inductor having a winding that overlaps with the scaled cavities.
    Type: Grant
    Filed: July 8, 2024
    Date of Patent: January 28, 2025
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Prateek Kumar Sharma, Venkata Narayana Rao Vanukuru, Kevin K. Dezfulian, Kenneth J. Giewont
  • Patent number: 12206021
    Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.
    Type: Grant
    Filed: April 27, 2023
    Date of Patent: January 21, 2025
    Assignees: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Kilsu Jung, Jin-Hong Park, Keun Heo, Sungjun Kim
  • Patent number: 12206020
    Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.
    Type: Grant
    Filed: April 27, 2023
    Date of Patent: January 21, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tsung-Yu Yang, Shin-Hung Li, Nien-Chung Li, Chang-Po Hsiung
  • Patent number: 12183835
    Abstract: Provided is a synaptic device including a substrate, a channel layer on the substrate, a gate dielectric layer on the channel layer; and a gate electrode on the gate dielectric layer, wherein the gate dielectric layer includes a charge supply dielectric film and a piezoelectric film, wherein the charge supply dielectric film includes a metal oxide or metal sulfide, wherein the piezoelectric film includes a piezoelectric material that converts a pressure stimulation into an electrical signal, wherein accordance to a change in a signal applied to the gate electrode, a magnitude and aspect of a current flowing through the channel layer are changed.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: December 31, 2024
    Assignee: Electronics and Telecommunications Research Institute
    Inventor: JungWook Lim
  • Patent number: 12159867
    Abstract: A semiconductor device polysilicon resistor formation method is provided. A third ion implantation and a fourth ion implantation are performed in a polysilicon resistor region, so that a high-resistance polysilicon resistor can be formed without an additional mask process.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: December 3, 2024
    Assignee: SK keyfoundry Inc.
    Inventors: Heuiseung Lee, Jungmun Jung
  • Patent number: 12142527
    Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.
    Type: Grant
    Filed: June 14, 2023
    Date of Patent: November 12, 2024
    Assignee: NXP B.V.
    Inventors: Antonius Hendrikus Jozef Kamphuis, Ernst Eiper, Johannes Cobussen, Chantal Claude Dijkstra
  • Patent number: 12144221
    Abstract: An OLED display device includes a substrate, a first protection layer substrate, conductive lines extending substantially in a first direction, a second protection layer, a first electrode overlapping at least a part of the conductive lines, a pixel defining layer including an opening exposing at least a part of the first electrode, an organic light emission layer, and a second electrode. The opening is divided into a first polygon and a second polygon with respect to an imaginary straight line that passes through the opening at a maximum length in the first direction. A planar area of the first polygon is different from a planar area of the second polygon.
    Type: Grant
    Filed: May 11, 2023
    Date of Patent: November 12, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Sangmin Hong, Heeseong Jeong
  • Patent number: 12138716
    Abstract: Discussed is an electrode lead tack welding jig for a battery cell, and the jig including a jig body configured to support at least two battery cells, and a close contact guide unit provided to both ends of the jig body and configured to guide electrode leads of the at least two battery cells to come into close contact when tack welding is performed to the electrode leads by a laser.
    Type: Grant
    Filed: January 7, 2020
    Date of Patent: November 12, 2024
    Assignee: LG ENERGY SOLUTION, LTD.
    Inventors: Kyung-Mo Kim, Jin-Yong Park, Ho-June Chi, Seung-Joon Kim, Jeong-O Mun, Hee-Jun Jin
  • Patent number: 12127471
    Abstract: A light-emitting element which includes a plurality of light-emitting layers between a pair of electrodes and has low driving voltage and high emission efficiency is provided. A light-emitting element including first to third light-emitting layers between a cathode and an anode is provided. The first light-emitting layer includes a first phosphorescent material and a first electron-transport material; the second light-emitting layer includes a second phosphorescent material and a second electron-transport material; the third light-emitting layer includes a fluorescent material and a third electron-transport material; the first to third light-emitting elements are provided in contact with an electron-transport layer positioned on a cathode side; and a triplet excitation energy level of a material included in the electron-transport layer is lower than triplet excitation energy levels of the first electron-transport material and the second electron-transport material.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: October 22, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Naoaki Hashimoto, Eriko Saijo, Satoshi Seo
  • Patent number: 12126274
    Abstract: A GaN layer is formed over the substrate. An AlGaN layer is formed on the GaN layer. A first source electrode, a first gate electrode, a second gate electrode, and a second source electrode are formed on or over the AlGaN layer. A first p-type Alx1Ga1-x1N layer where 0?x1<1 is interposed between the first gate electrode and the AlGaN layer. A second p-type Alx2Ga1-x2N layer where 0?x2<1 is interposed between the second gate electrode and the AlGaN layer. The substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode. The bidirectional switch further includes a terminal used to connect the substrate to a fixed potential node. The terminal is connected to the substrate.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: October 22, 2024
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yusuke Kinoshita, Yasuhiro Yamada, Takashi Ichiryu, Masanori Nomura, Hidetoshi Ishida
  • Patent number: 12099299
    Abstract: A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.
    Type: Grant
    Filed: July 18, 2023
    Date of Patent: September 24, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Jodi Grzeskowiak, Anthony Schepis, Anton Devilliers
  • Patent number: 12087741
    Abstract: A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: September 10, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koji Kusunoki, Yosuke Tsukamoto, Kensuke Yoshizumi