Abstract: Provided is a Ga2O3-based single crystal substrate capable of achieving a high processing yield. A Ga2O3-based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.

Abstract: Glass-based substrates are described herein that may be processed by methods including applying a cover article onto a glass-based substrate, submerging the glass-based substrate in an etchant, and maintaining the submersion of the glass-based substrate in the etchant. The glass-based substrate may include a covered surface portion and an exposed surface portion. At least a portion of the covered surface portion may be in direct contact with the cover article. The covered surface portion may not be in contact with the etchant and the exposed surface portion may be in direct contact with the etchant. The etchant may contact the exposed surface portion and the cover article fora time sufficient to etch the exposed surface portion. The cover article may provide a barrier between the etchant and the covered surface portion for the entirety of the submerging.

Abstract: A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

Abstract: The present disclosure combines chemical mechanical polishing (CMP), wet etch and deposition processes to provide improved processes and methods for planarizing an uneven surface of a material layer deposited over a plurality of structures formed on a substrate. A CMP process is initially used to smooth the uneven surface and provide complete local planarization of the material layer above the plurality of structures. After achieving complete local planarization, a wet etch process is used to etch the material layer until a uniform recess is formed between the plurality of structures and the material layer is provided with a uniform thickness across the substrate. In some embodiments, an additional material layer may be deposited and a second CMP process may be used to planarize the additional material layer to provide the substrate with a globally planarized surface.

Abstract: A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.

Abstract: Embodiments of a wet etch process and method are disclosed to provide uniform etching of material formed within features (such as, e.g., trenches, holes, slits, etc.) having different critical dimension (CD). By combining a non-aqueous organic-based etch solution and an aqueous-based etch solution (either in series or in parallel) within a wet etch process, the disclosed embodiments utilize the opposing effects of CD-dependent etching to provide uniform etching of the material, regardless of CD.

Abstract: The application relates to an aluminum alloy hub and a method for coating the surface of the aluminum alloy hub. The aluminum alloy hub is provided with an aluminum alloy matrix and a coating attached to the surface of the aluminum alloy matrix, and the coating sequentially includes a pre-coating layer formed by nickel-coated aluminum or aluminum-coated nickel powder, a Cr3C2 layer and a varnish layer on the surface of the aluminum alloy matrix. According to the aluminum alloy hub disclosed by the invention, more excellent corrosion resistance is obtained by spraying the Cr3C2 layer on the surface of the aluminum alloy hub.

Abstract: Methods of processing a substrate having one side and an opposite side include providing a protective film having a front surface and a back surface, and applying a water-soluble material to at least a central area of the front surface of the protective film and/or applying a water-soluble material to at least a central portion of the one side of the substrate. The protective film is applied to the one side of the substrate, wherein the front surface of the protective film faces the one side of the substrate and no adhesive is between at least the central area of the front surface of the protective film and the one side of the substrate. An external stimulus is applied to the protective so that the protective film is attached to the one side of the substrate, and the substrate can be processed.

Abstract: The invention relates to a method for producing a metal bladed element for a turbomachine of an aircraft, said bladed element comprising at least one blade having a lower surface and an upper surface extending between a leading edge and a trailing edge of the blade, the trailing edge having to have a thickness X1, said method comprising the steps of: a) producing the bladed element by lost-wax casting, and b) finishing the bladed element, characterised in that step b) comprises the chemical milling at least of the trailing edge of the or each blade so as to obtain said thickness X1 which cannot be directly obtained by step a).

Abstract: A method of preventing formation of rust on a metal surface is provided. The method may include applying a polyamine onto the metal surface and applying a compound of formula (I) or salt thereof onto the metal surface. The compositions and methods disclosed herein may be used to inhibit corrosion of a metal surface in contact with an aqueous system.

Abstract: A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a back electrode on a first portion of the piezoelectric substrate, forming a first dielectric layer on the first portion of the piezoelectric substrate, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer formed with the trench, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming an interdigital transducer (IDT) on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity below the back electrode.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: A mask manufacturing method includes a step of providing a metal substrate having a plurality of virtual zones on its surface, using a plurality of nozzles to spray an etching solution on the surface, wherein the virtual zones include a first and a second zone, and the metal substrate has a first thickness and a second thickness respectively in an unit area of the first zone and the second zone, wherein the first thickness is greater than the second thickness; the step of using the nozzles to spray the etching solution on the surface further includes respectively using a first spraying pressure and a second spraying pressure to spray the etching solution on the first zone and the second zone, and the first spraying pressure is greater than the second spraying pressure. The invention also provides a mask manufacturing device.

Abstract: An acoustic resonator device is formed using sacrificial polysilicon pillar by forming a polysilicon pillar on a substrate and depositing a dielectric layer to bury the polysilicon pillar and planarizing the surface of the dielectric layer. A piezoelectric plate is bonded to the planarized surface of the dielectric layer and thinned to a target piezoelectric membrane thickness. At least one conductor pattern is formed on the thinned piezoelectric plate and the polysilicon pillar is then removed using an etchant introduced through holes in the piezoelectric plate to form an air cavity where the pillar was removed.

Abstract: Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more branched surfactants, from one or more surfactant classes, such as derivatives of amino acids that have surface-active properties.

Abstract: Method for forming a metal film includes forming an oxide layer on a to-be-treated surface of a to-be-treated object by bringing the to-be-treated surface into contact with a reaction solution containing fluorine and an oxide precursor, removing fluorine in the oxide layer, supporting a catalyst on the oxide layer by bringing the oxide layer into contact with a catalyst solution, and depositing a metal film on the oxide layer by bringing the oxide layer into contact with an electroless plating liquid.

Abstract: A substrate processing method processes a substrate which has a metal layer on a principal surface. The substrate processing method includes a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer and a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate.

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

Abstract: A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

Abstract: The techniques described herein relate to a method for etching an ashable hard mask (AHM) on a substrate. The method includes forming a plasma from a gas mixture, wherein the gas mixture includes hydrogen peroxide vapor with a concentration greater than 0.1% by volume, wherein the concentration of the hydrogen peroxide vapor in the gas mixture is substantially stable over time, and wherein the plasma comprises hydrogen peroxide species. The method further includes etching the AHM by exposing the AHM to the plasma.