Abstract: Described herein is an aqueous, chromium-free composition for a pretreatment of aluminum surfaces, which includes at least one water-soluble phosphorus compound, at least one water-soluble zirconium compound, at least one water-soluble titanium compound, and at least one water-soluble molybdenum compound, a phosphorus compound content being in a range from 15 to 50 mg/l (calculated as phosphorus), a zirconium compound content being in a range from 400 to 600 mg/l (calculated as metal), a titanium compound content being in a range from 85 to 400 mg/l (calculated as metal), and a molybdenum compound content being in a range from 40 to 150 mg/l (calculated as metal). Also described herein are a corresponding method and a correspondingly pretreated component or strip.

Abstract: A semiconductor structure includes a set of mandrel lines and a set of non-mandrel lines disposed on a hardmask in an alternating pattern. Spacers are disposed between adjacent mandrel lines and non-mandrel lines. The spacers include a composition which exhibits an etch rate greater than an etch rate of the mandrel lines and the non-mandrel lines.

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

Abstract: An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.

Abstract: Embodiments described herein relate to methods for fabricating waveguide structures utilizing substrates. The waveguide structures are formed having input coupling regions, waveguide regions, and output coupling regions formed from substrates. The regions are formed by imprinting stamps into resists disposed on hard masks formed on surfaces of the substrates to form positive waveguide patterns. Portions of the positive waveguide patterns and the hard masks formed under the portions are removed. The substrates are masked and etched to form gratings in the input coupling regions and the output coupling regions. Residual portions of the positive waveguide patterns and the hard masks disposed under the residual portions are removed to form waveguide structures having input coupling regions, waveguide regions, and output coupling regions formed from substrates.

Abstract: The present invention is polishing particles for polishing a synthetic quartz glass substrate. The polishing particles contain cerium-based polishing particles and have a breaking strength, which is measured by a compression tester, of 30 MPa or more. This provides polishing particles for polishing a synthetic quartz glass substrate while sufficiently reducing generation of defects due to polishing.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.

Abstract: The invention provides a plasma processing method in which plasma etching is performed on a film to be etched by using a mask, the plasma processing method including: a deposition step of depositing a deposition film containing a boron element on the mask while a radio frequency power is supplied to a sample table on which a sample formed with the film to be etched is placed; and an etching step of etching the film to be etched by using plasma after the deposition step.

Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.

Abstract: Polishing liquid comprising abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one selected from the group consisting of amino acids and amino acid derivatives, in which a silanol group density of the abrasive grains is 6.5 groups/nm2 or less, and a degree of association of the abrasive grains is 1.5 or more.

Abstract: Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.

Abstract: An icephobic coating composition forms a coating layer that melts ice and snow upon contract and remains durable after several exposures to winter storms. The icephobic coating composition includes about 2.5% to about 12.5% by weight of latex polymer solids; about 30% to about 70% by weight of an inorganic halide salt; about 15% to about 50% by weight water; and about 1% to about 15% by weight of an organic co-solvent selected from glycerin, glycols, and glycol ethers. An alternative icephobic coating composition includes about 1% to about 20% by weight of a solution polymer instead of a latex polymer, and about 10% to about 40% by weight of a VOC-exempt organic solvent instead of the foregoing water and co-solvent.

Abstract: Provided is a CMP polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid containing: abrasive grains containing cerium; a nonionic water-soluble compound A; a polymer compound B having at least one selected from the group consisting of carboxylic acid groups and carboxylate groups; a basic pH adjusting agent which is optionally contained; and water, in which a content of the basic pH adjusting agent is less than 1.3×10?2 mol/kg based on the total mass of the polishing liquid.

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: The present invention provides a polishing composition with which it is possible to decrease a level difference to be unintentionally generated between dissimilar materials and a level difference to be unintentionally generated between coarse and dense portions of a pattern. The present invention relates to a polishing composition which contains abrasive grains having an average primary particle size of 5 to 50 nm, a level difference modifier containing a compound with a specific structure, having an aromatic ring and a sulfo group or a salt group thereof which is directly bonded to this aromatic ring, and a dispersing medium and of which the pH is less than 7.

Abstract: A polymeric substrate and a method of providing same includes providing a protection system of one or more layers on at least one first surface of the polymeric substrate, coating a spectrally controlling system on a surface of the protection system to provide an external surface, the spectrally controlling system comprising at least a light absorbing or a light reflecting layer, partially removing the spectrally controlling system from the external surface until reaching the at least one first surface of the protection system creating in the spectrally controlling system an area free of the light absorbing or light reflecting layer of the spectrally controlling system, and covering the area by depositing at least one or more substances in droplets.

Abstract: The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.

Abstract: A method for forming a multilayer coating film which includes forming an uncured coating film by applying a first aqueous base coating composition, forming an uncured coating film by applying a second aqueous base coating composition, forming an uncured coating film by applying a clear coating composition, and simultaneously heat curing the obtained coating films. The first aqueous base coating composition contains a carbodiimide compound, the clear coating composition contains a hydroxyl group-containing acrylic resin (A) having a hydroxyl value of 120 to 160 mgKOH/g and an acid value of 5 to 10 mgKOH/g, a polyisocyanate compound (B), and a polycarbonate diol compound (C). The component (A) has a hydroxyl group-containing alkyl moiety having 3 or less carbon atoms, and the ratio of the numbers of moles of the isocyanate functional groups of the component (B) and the hydroxyl group functional groups of the component (A) is 1.15 to 1.35.

Abstract: Gloss of a surface having a concave-convex structure is measured, and R/V, which is a ratio of a diffuse specular reflection intensity R to a sum total V of diffuse reflection intensities (in formula, the diffuse specular reflection intensity R represents a diffuse reflection intensity measured at an aperture angle of 1 degree by a variable-angle photometer in a diffuse specular reflection direction when visible light is radiated, at an angle of 45 degrees from a normal line, to the surface having the concave-convex structure of the anti-glare film, and the sum total V of diffuse reflection intensities represents a sum total of diffuse reflection intensities measured at an aperture angle of 1 degree by a variable-angle photometer for every 1 degree from ?45 degrees up to 45 degrees, including 0 degrees, with respect to the diffuse specular reflection direction when visible light is radiated, at an angle of 45 degrees from a normal line, to the surface having the concave-convex structure of the anti-glare film