Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

Abstract: A pulsed laser deposition method is provided. The method includes emitting a plurality of groups of femtosecond pulses, focusing the plurality of groups of femtosecond pulses into a plurality of groups of femtosecond filaments by lenses, and cross-coupling the plurality of groups of femtosecond filaments to form n beams of plasma gratings; exciting a target material by using a first plasma grating; and adjusting angles of the lenses and time delay between a plurality of beams of femtosecond pulses; coupling and splicing a second plasma grating with the first plasma grating along a grating pattern of the first plasma grating, until a nth plasma grating is coupled and spliced with a (n?1)th plasma grating along a grating pattern of the (n?1)th plasma grating to form a plasma grating channel; and exciting the target material by using the plasma grating channel to complete deposition on a substrate.

Abstract: A method of forming patterns includes: forming a hard mask layer on a target layer, coating a cleavage relief layer on the hard mask layer to fill cleavages generated in the hard mask layer, forming photoresist patterns on the cleavage relief layer, removing portions of the cleavage relief layer and portions of the hard mask layer using the photoresist patterns as a first etch mask to form hard mask patterns, removing portions of the target layer using the hard mask patterns as a second etch mask to form target layer patterns, and removing the hard mask patterns. The hard mask layer includes an amorphous carbon layer (ACL), and the cleavage relief layer includes a spin-on carbon (SOC) layer.

Abstract: A method of fabricating a blazed diffraction grating comprises providing a master template substrate and imprinting periodically repeating lines on the master template substrate in a plurality of master template regions. In some embodiments, the periodically repeating lines in different ones of the master template regions extend in different directions. The method additionally comprises using at least one of the master template regions as a master template to imprint at least one blazed diffraction grating pattern on a grating substrate. In some embodiments, the method further comprises coating the periodically repeating lines with a material having a greater hardness than the material that forms the lines.

Abstract: The system applies a stencil defining a design to a stencil layer including an acid-resistant surface and an adhesive surface. The system adheres the stencil layer to the metal surface covered with the pigmented layer, where the adhesive surface attaches to the metal surface covered with the pigmented layer. The system applies a coat of low-acidity gel formulated to at least partially separate the pigmented layer from the metal surface and to not abrade the acid-resistant surface and the adhesive surface. The system applies low heat to the coat of low-acidity gel and removes the coat of low-acidity gel, thereby removing at least a portion of the pigmented layer from the metal surface. The system separates remaining pigmented layer from the metal surface using a pick tool or a gust of air.

Abstract: A method of producing a particle coating on one or more items is provided. The method comprises mixing a supercritical fluid with a solution comprising dissolved material for forming particles. The method further comprises spraying the mixture into a precipitation chamber (316) to precipitate particles, wherein the chamber is at a pressure below a supercritical pressure of the supercritical fluid. The method comprises conveying items to be coated from an inlet of the chamber to an outlet of the chamber. The method also comprises capturing the precipitated particles on items within the chamber.

Abstract: A method of producing a particle coating on one or more items is provided. The method comprises mixing supercritical carbon dioxide with a solution comprising dissolved material for forming particles. The method further comprises spraying the mixture into a precipitation chamber (316) to precipitate particles, wherein the chamber is at a pressure below a supercritical pressure of the supercritical fluid. The method also comprises capturing the precipitated particles on one or more items located within the chamber.

Abstract: A semiconductor device and fabrication method are described for forming a nanosheet transistor device by forming a nanosheet transistor stack (12-18, 25) of alternating Si and SiGe layers which are selectively processed to form metal-containing current terminal or source/drain regions (27, 28) and to form control terminal electrodes (36A-D) which replace the SiGe layers in the nanosheet transistor stack and are positioned between the Si layers which form transistor channel regions in the nanosheet transistor stack to connect the metal source/drain regions, thereby forming a nanosheet transistor device.

Abstract: Disclosed are methods of fabricating semiconductor devices and methods of separating substrates. The semiconductor device fabricating method comprises providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate, irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer, and performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate. The release layer includes an aromatic polymerization unit and a siloxane polymerization unit.

Abstract: A method for producing a glass article is provided. The method for producing a glass article, the method including preparing a glass to be processed, the glass comprising a glass bulk and a low-refractive surface layer disposed on the glass bulk, and etching away the low-refractive surface layer to form an etched glass, wherein the etching away the low-refractive surface layer comprises: cleaning the low-refractive surface layer with an acid solution; and cleaning the low-refractive surface layer with a base solution after the cleaning it with the acid solution.

Abstract: An etching method includes (a) providing a substrate including a carbon-containing film, the substrate being situated on a substrate support and (b) etching the substrate with a plasma to form an etching shape in the carbon-containing film, the plasma being configured to be formed from a gas containing H and O, the etching shape including a bottom. In (b), a temperature of the substrate support is adjusted to 0° C. or less.

Abstract: Methods and assemblies for aligning an optical device with a surface configured to receive a liquid coating and for measuring a parameter of a liquid coating are provided. An exemplary method for measuring a parameter of a liquid coating includes providing a mechanical carriage connected to a surface configured to receive a layer of the liquid coating. An exemplary mechanical carriage is configured to move to and from an operative configuration located at a set distance and orientation with respect to the surface. The method further includes locating an optical device in the mechanical carriage. Also, the method includes adjusting an orientation of the optical device within the mechanical carriage to an aligned orientation based on a relationship between the surface and a mechanical alignment feature on the optical device. The method further includes performing a parameter measurement operation with the optical device in the aligned orientation.

Abstract: Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.

Abstract: The present application provides a method and apparatus for correcting the position of a wafer and a storage medium. The method includes: acquiring etching parameters of preset points on an etched first wafer, wherein the etching parameters include positional information and an etch rate; determining the positional information of the central point of an etch rate distribution map of the first wafer according to the etching parameters of the preset points; and correcting the position of a second wafer to be etched according to the positional information of the central point of the etch rate distribution map of the first wafer, so that the circle center of the second wafer coincides with the central point of the etch rate distribution map of the first wafer.

Abstract: A coating layer and a method for producing thereof, wherein the coating layer includes Al, Cr and N as main components according to formula (AlaCrb)xOyCzNq, where a and b are respectively the concentration of aluminium and chromium in atomic ratio considering only Al and Cr for the calculation of the element composition in the layer, whereby a+b=1 and 0?a?0.7 and 0?b?0.2, and where x is the sum of the concentration of Al and the concentration of Cr, and y, z and q are the concentration of oxygen, carbon and nitrogen respectively in atomic ratio considering only Al, Cr, O, C and N for the calculation of the element composition in the layer, whereby x+y+z+q=1 and 0.45?x?0.55, 0?y?0.25, 0?z?0.25, and wherein the coating layer exhibits 90% or more of fcc cubic phase, and compressive stress of 2.5 GPa or more, preferably between 2.5 GPa and 6 GPa.

Abstract: A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.

Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a lead and tin halide precursor ink.

Abstract: A method for coating a substrate 11 is disclosed. The method includes at least the following steps: depositing a first base layer 22 comprising a nitride of at least Al and Cr on the substrate 11 by physical vapor deposition at a gradually increasing substrate bias voltage from a first substrate bias voltage to a second substrate bias voltage; depositing a second base layer 23 comprising a nitride of at least Al and Cr on the first base layer 22 by physical vapor deposition at a constant substrate bias voltage that is greater or equal to the second substrate bias voltage; and depositing an outermost indicator layer 24 on the second base layer 23, wherein the outermost indicator layer 24 comprises a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr, wherein the outermost indicator layer 24 is deposited by physical vapor deposition at a substrate bias voltage that is less than the constant substrate bias voltage applied during deposition of the second base layer 23.

Abstract: An intravascular stent and method of making an intervascular stent having a hybrid pattern a. The hybrid pattern comprises a plurality of circumferentially self-expansible members comprising a plurality of interconnected, geometrically deformable closed cells, adjacent self-expansible members interconnected by a plurality of bridge members linking a first interconnection between two closed cells in a first self-expansible member to a second interconnection between two closed cells in a second self-expansible member, wherein the second interconnection is circumferentially offset and non-adjacent to the first interconnection.

Abstract: The mask includes a first surface and a second surface that are arranged opposite to each other. The first surface includes a plurality of first grooves, the second surface includes a plurality of second grooves, the plurality of second grooves and the plurality of first grooves are in a one-to-one correspondence, and each second groove and a respective first groove corresponding to the each second groove penetrate the mask. On the second surface, the distance between adjacent second grooves is greater than a preset distance, where the preset distance is greater than zero.