Patents Examined by Shamim Ahmed
  • Patent number: 11415846
    Abstract: A display device includes a substrate of a display panel, including: a display area and a non-display area, an upper surface and a lower surface each in the display area and the non-display area, and side surfaces connecting the upper and lower surfaces to each other; a signal line on the upper surface of the substrate; a circuit substrate on a side surface of the substrate; and a connection electrode on the upper surface of the substrate in the non-display area thereof, where the connection electrode electrically connects the signal line and the circuit substrate to each other. In the non-display area, the substrate further includes: a first etched portion recessed from the side surface at which the circuit substrate is disposed, and a second etched portion extending from the first etched portion toward the signal line, and the connection electrode is in the first and second etched portions.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: August 16, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Byoungdae Ye, Donghyeon Lee, Junwoo You
  • Patent number: 11415883
    Abstract: Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: August 16, 2022
    Assignee: Molecular Imprints, Inc.
    Inventor: Vikramjit Singh
  • Patent number: 11410859
    Abstract: The present invention provides a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removal performance as well as excellent anticorrosion performance for an object to be treated. The treatment liquid of an aspect of the present invention is a treatment liquid for a semiconductor device contains one or more hydroxylamine compounds selected from the group consisting of hydroxylamine and a hydroxylamine salt, an organic basic compound, an alcohol-based solvent, and a surfactant, in which a content of the alcohol-based solvent with respect to a total mass of the treatment liquid is 40% to 85% by mass, and a pH is 8 or higher.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: August 9, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Tomonori Takahashi
  • Patent number: 11407943
    Abstract: An etching composition for a silver-containing thin film includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a metal-based oxidizer, and water.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: August 9, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jonghee Park, Kitae Kim, Jinseock Kim, Gyu-Po Kim, Hyun-Cheol Shin, Dae-Woo Lee, Sang-Hyuk Lee
  • Patent number: 11407005
    Abstract: A coating method includes supplying a film forming liquid onto a center of a front surface of a substrate from a nozzle in a state that a distance between the front surface and the nozzle is maintained at a coating distance; rotating the substrate at a first rotation speed in a period during which the film forming liquid is supplied onto the front surface, to allow the film forming liquid to be diffused toward an edge of the substrate from an outer periphery of the nozzle; and rotating the substrate at a second rotation speed after the supplying of the film forming liquid is stopped, to allow the film forming liquid to be further diffused. The coating distance is set to allow the film forming liquid to be kept between the nozzle and the front surface when a discharge of the film forming liquid is stopped.
    Type: Grant
    Filed: May 8, 2020
    Date of Patent: August 9, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masatoshi Kawakita, Yusaku Hashimoto, Kosuke Yoshihara
  • Patent number: 11410848
    Abstract: A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: August 9, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Koji Asakawa, Norikatsu Sasao, Shinobu Sugimura
  • Patent number: 11404281
    Abstract: First and second silicon containing films can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the first silicon containing film of the processing target object by generating plasma of a processing gas within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the second silicon containing film of the processing target object by generating the plasma of the processing gas within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: August 2, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Sho Tominaga
  • Patent number: 11389830
    Abstract: A multilayer coating film forming method to form a multilayer coating film having a glittering appearance. Forming a multilayer coating film by sequentially applying, on top of a base material, a first base coating material, a second base coating material, and a clear coating material in a wet-on-wet process, wherein: the first base coating material is a transparent or colored coating material; the second coating material contains a flaky lustrous pigment; the amount of flaky lustrous pigment being 10-60 parts by mass to 100 parts by mass of resin solid content in the second base coating material, and the concentration of solids in the coating falls being 5-20 mass % with respect to the total mass of the second base coating material; and the thickness of a coating film obtained from the second base coating material falls being 1-8 ?m on the basis of the coating film when cured.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: July 19, 2022
    Assignee: KANSAI PAINT CO., LTD.
    Inventors: Masahiro Omura, Hironori Tonomura
  • Patent number: 11389825
    Abstract: Methods and associated systems for preparing a nano-protective coating are disclosed. The method includes (1) placing a substrate in a reaction chamber of a nano-coating preparation equipment; (2) introducing an inert gas, wherein the inert gas includes helium (He) and/or argon (Ar); (3) turning on a movement mechanism so that the substrate is moved in the reaction chamber; (4) introducing a first monomer vapor into the reaction chamber to achieve a vacuum degree of 30-300 mTorr; (5) turning on a plasma discharge for chemical vapor deposition; and (6) introducing a second monomer vapor into the reaction chamber to form an organosilicon nano-coating on a surface of the substrate.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: July 19, 2022
    Assignee: Jiangsu Favored Nanotechnology Co., LTD
    Inventor: Jian Zong
  • Patent number: 11387111
    Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: July 12, 2022
    Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology, Co., LTD
    Inventors: Michael X. Yang, Hua Chung, Xinliang Lu
  • Patent number: 11380555
    Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: July 5, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara
  • Patent number: 11380554
    Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: July 5, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
  • Patent number: 11376626
    Abstract: Systems having one or more features that are advantageous for depositing fluorinated polymeric coatings on substrates, and methods of employing such systems to deposit such coatings, are generally provided.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: July 5, 2022
    Assignee: GVD Corporation
    Inventors: W. Shannan O'Shaughnessy, Andrew Grant, Kelli Byrne, Michael E. Stazinski, Hilton Pryce Lewis
  • Patent number: 11369991
    Abstract: Provided is a method for forming a multilayer coating film, the method being capable of forming a high-brightness white multilayer coating film which is excellent in terms of brilliant feeling, smoothness, and weather resistance and with which white stains are suppressed. In this method for forming a multilayer coating film to form a brilliant coating film, a white multilayer coating film is formed by: sequentially applying a first coloring paint (P1), a second aqueous coloring paint (P2), a third aqueous coloring paint (P3), and a clear coat paint (P4) on a cured electrodeposition coating film formed on a steel sheet; and forming a first colored coating film, a second colored coating film, a third colored coating film, and a clear coat coating film which each have a particular composition, brightness, film thickness, and the like.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: June 28, 2022
    Assignee: KANSAI PAINT CO., LTD.
    Inventor: Masahiro Omura
  • Patent number: 11369988
    Abstract: Methods of curtain coating substrates are disclosed. In some embodiments, the methods include applying two or more liquid layers simultaneously to a substrate, wherein the multiple layers include a bottom liquid layer comprising a shear thinning liquid, and another liquid layer comprising a viscoelastic liquid. In some embodiments, the disclosed methods include formulating a bottom layer liquid comprising a shear thinning liquid, formulating another layer liquid comprising a viscoelastic liquid, pumping the bottom layer liquid and the other layer liquid through coating dies simultaneously and onto a moving substrate such that the bottom layer liquid impinges on the substrate thereby forming a bottom layer, and the other layer liquid forms another liquid layer above the bottom liquid layer. The inclusion of a bottom liquid layer comprising a shear thinning liquid and other layer comprising a viscoelastic liquid provides for enlargement of the curtain coating window.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: June 28, 2022
    Assignees: DOW GLOBAL TECHNOLOGIES LLC, REGENTS OF THE UNIVERSITY OF MINNESOTA, ROHM AND HAAS COMPANY
    Inventors: Alireza Mohammad Karim, Saswati Pujari, Wieslaw J. Suszynski, Lorraine F. Francis, Marcio S. Carvalho, Vinita Yadav
  • Patent number: 11365351
    Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.
    Type: Grant
    Filed: October 8, 2020
    Date of Patent: June 21, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel I. Cooper, Steven M. Bilodeau
  • Patent number: 11367590
    Abstract: A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kosuke Ogasawara, Kentaro Yamaguchi, Takanori Banse
  • Patent number: 11361973
    Abstract: An etching method includes preparing a substrate having a processing target film, multiple core members formed on the processing target film, and a first film covering the multiple core members and the processing target film exposed between the multiple core members; forming a second film on a surface of the first film by a first gas; etching the first film by plasma of a second gas while allowing the second film to be left on a portion of the first film corresponding to a side surface of each core member; and repeating the forming of the second film and the etching of the first film.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: June 14, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Yusuke Takino
  • Patent number: 11361944
    Abstract: A plasma processing method, including: a trenched substrate preparation process of preparing a trenched substrate having trenches having a bottom exposing an oxide film; and an oxide film removal process of exposing the trenched substrate to a plasma, to remove the oxide film. The oxide film removal process includes a plurality of cycles, each cycle including: an oxide film etching step of etching the oxide film; and a cleaning step of removing an attached matter on inner walls of the trenches, after the oxide film etching step.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: June 14, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Atsushi Harikai, Shogo Okita
  • Patent number: 11355350
    Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: June 7, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinya Ishikawa, Kenta Ono, Maju Tomura, Masanobu Honda