Patents Examined by Shamim Ahmed
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Patent number: 11721595Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.Type: GrantFiled: January 8, 2020Date of Patent: August 8, 2023Assignee: Tokyo Electron LimitedInventors: Sho Oikawa, Seiji Yokoyama, Taichi Okano, Shunichi Kawasaki
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Patent number: 11721522Abstract: A capacitively coupled plasma processing apparatus includes a chamber; a gas supply that supplies an inert gas into the chamber; a substrate support including a lower electrode; an upper electrode provided above the substrate support and including silicon; a first radio-frequency power supply electrically connected to the upper electrode; a second radio-frequency power supply electrically connected to the lower electrode; a bias power supply that applies a negative bias voltage to the upper electrode; and a controller that controls an overall operation of the capacitively coupled plasma processing apparatus such that the silicon-containing material is deposited on sidewalls of a mask of the substrate to narrow an opening formed on the mask by an amount greater in a second direction than in a first direction.Type: GrantFiled: June 8, 2022Date of Patent: August 8, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kosuke Ogasawara, Kentaro Yamaguchi, Takanori Banse
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Patent number: 11710670Abstract: A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.Type: GrantFiled: August 21, 2020Date of Patent: July 25, 2023Assignee: SPTS Technologies LimitedInventors: Oliver Ansell, Harry Gordon-Moys
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Patent number: 11708301Abstract: A method for producing a glass article is provided. The method for producing a glass article, the method including preparing a glass to be processed, the glass comprising a glass bulk and a low-refractive surface layer disposed on the glass bulk, and etching away the low-refractive surface layer to form an etched glass, wherein the etching away the low-refractive surface layer comprises: cleaning the low-refractive surface layer with an acid solution; and cleaning the low-refractive surface layer with a base solution after the cleaning it with the acid solution.Type: GrantFiled: October 16, 2018Date of Patent: July 25, 2023Assignee: Samsung Display Co., Ltd.Inventors: Hoi Kwan Lee, Sung Hoon Kim, Seung Ho Kim, Sook Kyung You, An Na Ryu, Jeong Seok Lee
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Patent number: 11701246Abstract: An intravascular stent and method of making an intervascular stent having a hybrid pattern a. The hybrid pattern comprises a plurality of circumferentially self-expansible members comprising a plurality of interconnected, geometrically deformable closed cells, adjacent self-expansible members interconnected by a plurality of bridge members linking a first interconnection between two closed cells in a first self-expansible member to a second interconnection between two closed cells in a second self-expansible member, wherein the second interconnection is circumferentially offset and non-adjacent to the first interconnection.Type: GrantFiled: October 8, 2019Date of Patent: July 18, 2023Assignee: Vactronix Scientific, LLC.Inventors: Armando Garza, Julio C. Palmaz, Michael Poor
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Patent number: 11694876Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias voltage signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. Embodiments of the disclosure include a method and apparatus for synchronizing a pulsed radio frequency (RF) waveform to a pulsed voltage (PV) waveform, such that the pulsed RF waveform is on during a first stage of the PV waveform and off during a second stage. The first stage of the PV waveform includes a sheath collapse stage. The second stage of the PV waveform includes an ion current stage.Type: GrantFiled: August 9, 2022Date of Patent: July 4, 2023Assignee: Applied Materials, Inc.Inventors: James Rogers, Katsumasa Kawasaki
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Patent number: 11686000Abstract: Described herein is an aqueous, chromium-free composition for a pretreatment of aluminum surfaces, which includes at least one water-soluble phosphorus compound, at least one water-soluble zirconium compound, at least one water-soluble titanium compound, and at least one water-soluble molybdenum compound, a phosphorus compound content being in a range from 15 to 50 mg/l (calculated as phosphorus), a zirconium compound content being in a range from 400 to 600 mg/l (calculated as metal), a titanium compound content being in a range from 85 to 400 mg/l (calculated as metal), and a molybdenum compound content being in a range from 40 to 150 mg/l (calculated as metal). Also described herein are a corresponding method and a correspondingly pretreated component or strip.Type: GrantFiled: October 25, 2017Date of Patent: June 27, 2023Assignee: CHEMETALL GMBHInventors: Heiko Hellmers, Thomas Wendel, Norbert Maurus
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Patent number: 11682558Abstract: A semiconductor structure includes a set of mandrel lines and a set of non-mandrel lines disposed on a hardmask in an alternating pattern. Spacers are disposed between adjacent mandrel lines and non-mandrel lines. The spacers include a composition which exhibits an etch rate greater than an etch rate of the mandrel lines and the non-mandrel lines.Type: GrantFiled: September 22, 2021Date of Patent: June 20, 2023Assignee: International Business Machines CorporationInventors: Chi-Chun Liu, Ashim Dutta, Nelson Felix, Ekmini Anuja De Silva
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Patent number: 11674230Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.Type: GrantFiled: July 8, 2020Date of Patent: June 13, 2023Assignee: TOKUYAMA CORPORATIONInventors: Tomoaki Sato, Yuki Kikkawa, Takafumi Shimoda, Takayuki Negishi
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Patent number: 11670517Abstract: An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.Type: GrantFiled: July 4, 2019Date of Patent: June 6, 2023Inventors: Sei Negoro, Kenji Kobayashi
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Patent number: 11662516Abstract: Embodiments described herein relate to methods for fabricating waveguide structures utilizing substrates. The waveguide structures are formed having input coupling regions, waveguide regions, and output coupling regions formed from substrates. The regions are formed by imprinting stamps into resists disposed on hard masks formed on surfaces of the substrates to form positive waveguide patterns. Portions of the positive waveguide patterns and the hard masks formed under the portions are removed. The substrates are masked and etched to form gratings in the input coupling regions and the output coupling regions. Residual portions of the positive waveguide patterns and the hard masks disposed under the residual portions are removed to form waveguide structures having input coupling regions, waveguide regions, and output coupling regions formed from substrates.Type: GrantFiled: April 27, 2022Date of Patent: May 30, 2023Assignee: Applied Materials, Inc.Inventors: Michael Yu-tak Young, Wayne McMillan, Rutger Meyer Timmerman Thijssen, Robert Jan Visser
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Patent number: 11664233Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.Type: GrantFiled: July 28, 2021Date of Patent: May 30, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masaki Ishiguro, Masahiro Sumiya, Shigeru Shirayone, Tomoyuki Tamura, Kazuyuki Ikenaga
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Patent number: 11664232Abstract: A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.Type: GrantFiled: November 15, 2020Date of Patent: May 30, 2023Assignee: SPTS Technologies LimitedInventors: Huma Ashraf, Kevin Riddell, Codrin Prahoveanu
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Patent number: 11661539Abstract: The present invention is polishing particles for polishing a synthetic quartz glass substrate. The polishing particles contain cerium-based polishing particles and have a breaking strength, which is measured by a compression tester, of 30 MPa or more. This provides polishing particles for polishing a synthetic quartz glass substrate while sufficiently reducing generation of defects due to polishing.Type: GrantFiled: October 11, 2019Date of Patent: May 30, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Mitsuhito Takahashi
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Patent number: 11658040Abstract: The invention provides a plasma processing method in which plasma etching is performed on a film to be etched by using a mask, the plasma processing method including: a deposition step of depositing a deposition film containing a boron element on the mask while a radio frequency power is supplied to a sample table on which a sample formed with the film to be etched is placed; and an etching step of etching the film to be etched by using plasma after the deposition step.Type: GrantFiled: June 26, 2019Date of Patent: May 23, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masaaki Taniyama, Kenichi Kuwahara, Satoshi Une
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Patent number: 11655394Abstract: Polishing liquid comprising abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one selected from the group consisting of amino acids and amino acid derivatives, in which a silanol group density of the abrasive grains is 6.5 groups/nm2 or less, and a degree of association of the abrasive grains is 1.5 or more.Type: GrantFiled: August 9, 2017Date of Patent: May 23, 2023Assignee: RESONAC CORPORATIONInventors: Yuya Otsuka, Tomohiro Iwano
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Patent number: 11654461Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.Type: GrantFiled: May 21, 2021Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Jen Hsiao, Ya-Ping Chen, Chien-Hung Lin, Wen-Pin Liu, Chin-Wen Chen
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Patent number: 11655537Abstract: Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.Type: GrantFiled: October 26, 2020Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick
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Patent number: 11649377Abstract: Provided is a CMP polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid containing: abrasive grains containing cerium; a nonionic water-soluble compound A; a polymer compound B having at least one selected from the group consisting of carboxylic acid groups and carboxylate groups; a basic pH adjusting agent which is optionally contained; and water, in which a content of the basic pH adjusting agent is less than 1.3×10?2 mol/kg based on the total mass of the polishing liquid.Type: GrantFiled: August 14, 2017Date of Patent: May 16, 2023Assignee: RESONAC CORPORATIONInventors: Masayuki Hanano, Toshio Takizawa
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Patent number: 11649360Abstract: An icephobic coating composition forms a coating layer that melts ice and snow upon contract and remains durable after several exposures to winter storms. The icephobic coating composition includes about 2.5% to about 12.5% by weight of latex polymer solids; about 30% to about 70% by weight of an inorganic halide salt; about 15% to about 50% by weight water; and about 1% to about 15% by weight of an organic co-solvent selected from glycerin, glycols, and glycol ethers. An alternative icephobic coating composition includes about 1% to about 20% by weight of a solution polymer instead of a latex polymer, and about 10% to about 40% by weight of a VOC-exempt organic solvent instead of the foregoing water and co-solvent.Type: GrantFiled: September 28, 2021Date of Patent: May 16, 2023Assignee: SWIMC LLCInventor: Joshua M. Halstead
