Abstract: A structure includes a semiconductor substrate, a source epitaxial structure, a drain epitaxial structure, and a gate stack. The source epitaxial structure is in the semiconductor substrate. The source epitaxial structure has a top surface, and the top surface of the source epitaxial structure comprises hydrogen. The drain epitaxial structure is in the semiconductor substrate. The gate stack is over the semiconductor substrate and between the source epitaxial structure and the drain epitaxial structure.

Abstract: Provided are a flexible display device including an electrode or wiring including an amorphous metal layer using amorphous metal, and a method of manufacturing thereof. Also, provided are a flexible display device including an electrode or wiring including an amorphous metal layer and a crystalline metal layer, and a method of manufacturing thereof.

Abstract: A display device including a first substrate including a display part arranged with a plurality of pixels and a terminal part arranged in an outside of the display part, the display part and the terminal part being on a first surface of the substrate, a second substrate facing the first surface, a first sealing layer arranged between the first substrate and the second substrate, and a buffer layer adjacent to the first sealing layer. A part of an end part of the first sealing layer is arranged between the display part and the terminal part, the part of the end part and an upper surface of the first sealing layer form a first step part, the buffer layer is located at the first step part and has a thickness which decreases as a distance from the first step increases.

Abstract: A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength ?dom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength ?dom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength ?dom1 of the first active layer and the second dominant wavelength ?dom2 of the second active layer are different from each other.

Abstract: A low temperature deposited (400° C. or less) dielectric passivation layer is formed on physically exposed surfaces of a material stack including a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode. A laser anneal is then performed to improve the physical and chemical properties of the low temperature deposited dielectric passivation layer, without negatively impacting the multilayered MTJ pillar.

Abstract: The disclosure provides a printed circuit board structure. The printed circuit board structure includes a printed circuit board, a semiconductor chip, a first pad, a second pad, a conductive wire, and a third pad. The semiconductor chip is disposed on the printed circuit board. The first pad is disposed on the semiconductor chip. The second pad is disposed on the printed circuit board. The conductive wire electrically connects the first pad and the second pad. The third pad is disposed between the first pad and the second pad. The conductive wire has a portion located on the third pad.

Abstract: A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Abstract: A display device and a method for manufacturing the same are disclosed, in which a cathode electrode is not separated from an organic light emitting layer. The method for manufacturing a display device comprises the steps of forming pixels on a display area on a first substrate, forming an encapsulation film to cover the display area, attaching a protective film onto the encapsulation film, and removing the protective film. When attaching the protective film, the protective film includes a substrate layer and an adhesive layer formed at an edge area of at least one side of the substrate layer.

Abstract: A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.

Abstract: A light source module includes a lighting structure, a light diffusing layer, a wavelength converting layer, and a cover plate. The lighting structure includes a plurality of light emitting elements that are all blue-light emitting elements. The light diffusing layer is disposed on the lighting structure, the wavelength converting layer is disposed on the light diffusing layer, and the cover plate is disposed on the wavelength converting layer.

Abstract: The present application discloses a method for fabricating a semiconductor device including providing a substrate, forming a growing base film above the substrate, forming a plurality of doped segments and a plurality of undoped segments in the growing base film, selectively forming a plurality of insulating segments on the plurality of undoped segments, removing the plurality of doped segments, and forming a plurality of capacitor structures above the substrate.

Abstract: Embodiments of the invention include a luminescent ceramic including (Ba1-xSrx)2-zSi5-yO4yN8-4y:Euz 258 phase wavelength converting material (0.5?x?0.9; 0?y?1; 0.001?z?0.02) and M3Si3O3N4 3334 phase material (M=Ba, Sr, Eu). The M3Si3O3N4 3334 phase material comprises no more than 5 weight % of the material.

Abstract: The disclosure provides a flexible display panel and a flexible display, by disposing a plurality of notches at intervals on an edge of the encapsulation layer of the flexible display panel near the bending area of the flexible display panel, so that when the flexible display panel is bent in the bending area, the bending stress applied to the edge of the encapsulation layer can be dispersed through the notches, so as to avoid the problem that warping of the edge of the encapsulation layer may be caused by the bending stress, thereby increasing the reliability of the flexible display panel.

Abstract: An apparatus comprises a transparent substrate (3), at least one sensor (5) for the detection of electromagnetic radiation (31), and for each sensor a corresponding mirror having a reflective surface (11). The reflective surface (11) is shaped so that electro-magnetic radiation (31) incident on the transparent substrate (3) at a specific angle, passing through the transparent substrate (3) and being reflected by the reflective surface (11) is directed towards the sensor (5). The sensor (5) comprises a two dimensional material like graphene and may be a quantum dot functionalised graphene field effect transistor. The present invention enables the incident electromagnetic radiation (31) to be focussed onto the at least one sensor (5) without the use of additional optical components like lenses or microlenses. This may enable focussed images to be obtained by the apparatus.

Abstract: Provided is a display device including: a substrate; a plurality of display elements defining a display area on the substrate and each including a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode; a power supply wiring disposed outside the display area; an organic insulating layer on the power supply wiring and having an opening exposing the power supply wiring; a power supply electrode layer partially disposed on the organic insulating layer and including a plurality of holes over the organic insulating layer, wherein a first portion of the power supply electrode layer overlaps the power supply wiring and a second portion of the power supply electrode layer overlaps the opposite electrode; a plurality of protrusions spaced apart from each other and respectively covering at least some of the plurality of holes; and an encapsulation layer covering the plurality of display elements.

Abstract: A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers, and a liner semiconductor layer disposed between the first channel layers and the first source/drain region.

Abstract: A Mie photo sensor is described. A Mie photo sensor is configured to leverage Mie scattering to implement a photo sensor having a resonance. The resonance is based on various physical and material properties of the Mie photo sensor. In an example, a Mie photo sensor includes a layer of semiconductor material with one or more mesas. Each mesa of semiconductor material may include a scattering center. The scattering center is formed by the semiconductor material of the mesa being at least partially surround by a material with a different refractive index than the semiconductor material. The abutting refractive index materials create an interface that forms a scattering center and localizes the generation of free carriers during Mie resonance. One or more electrical contacts may be made to the mesa to measure the electrical properties of the mesa.

Abstract: The present invention relates to an electronic system comprising an electronic system comprising an electromechanical microsystem and a hermetic box encapsulating said microsystem. The box includes a fastening plane. The electromechanical microsystem includes a sensitive part and at least two beams connecting the sensitive part to the fastening plane. The beams are thermally coupled to the sensitive part and are electrically coupled to one another. The system further includes a thermal regulator of the electromechanical microsystem including an electrical circuit including at least two ends connected to the beams, and a circuit controller able to generate an electrical current in the electrical circuit to modify the temperature of the sensitive part.

Abstract: A method of producing a color filter includes applying, on a semiconductor substrate, a first color filter material including a first resin dispersion including a first pigment and a resin material, curing the first color filter material such that a first color filter film is formed and serves as a precursor of a first color filter including the first pigment, forming a photosensitive resin mask material layer on the first color filter film, forming openings by photolithography in portions of the photosensitive resin mask material layer such that second and subsequent color filters including pigments of colors different from the first pigment are to be formed in the openings, and that portions of the first color filter film are exposed by the openings, dry-etching the portions of the first color filter film by using a dry etching gas and the photosensitive resin mask material layer as an etching mask, removing the etching mask such that the first color filter is formed, and forming the second and subsequent c