Abstract: Solar tracker systems include a torque tube, a column supporting the torque tube, a solar panel connected to the torque tube, and a damper assembly. The damper assembly includes a first end pivotably connected to the torque tube and a second end pivotably connected to the column. The damper assembly further includes an outer shell, a piston within and moveable relative to the outer shell, a first chamber wall and a second chamber wall within the outer shell at least partially defining a chamber, and a valve within the chamber. The valve includes a first axial end defining a slot and is biased to a first position within the chamber in which the first axial end is spaced from the first chamber wall. The valve is moveable within the chamber from the first position to a second position to passively change a flow resistance of the damper assembly.

Abstract: An electronic device including an interposer is provided.

Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

Abstract: A semiconductor memory device comprises: a substrate; a first conductive layer separated from the substrate in a first direction and extending in a second direction; a second and a third conductive layers separated from the substrate and the first conductive layer in the first direction and aligned in the second direction; a first semiconductor layer facing the first and the second conductive layers; a second semiconductor layer facing the first and the third conductive layers; a first and a second bit lines electrically connected to the first and the second semiconductor layers. At least some of operation parameters in the case of a certain operation being executed on a memory cell corresponding to the first conductive layer differ from at least some of operation parameters in the case of the certain operation being executed on a memory cell corresponding to the second conductive layer or the third conductive layer.

Abstract: A method includes receiving signaling indicative of performance of a sanitization operation to a processing device coupled to a memory device and applying a sanitization voltage to a plurality of memory blocks of the memory device. The sanitization voltage can be greater than an erase voltage of the plurality of memory blocks.

Abstract: Disclosed is an operating method of a controller for controlling an operation of a semiconductor memory device including a plurality of memory cells. In the operating method of the controller, program data to be stored in a selected page of the semiconductor memory device is generated, and the semiconductor memory device is controlled to program the program data in the selected page. Bit data at a predetermined position in the program data is data for allowing a threshold voltage of a corresponding memory cell to maintain an erase state.

Abstract: Systems, apparatuses, and methods related to extended memory communication subsystems for performing extended memory operations are described. An example method can include receiving, at a processing unit that is coupled between a host device and a non-volatile memory device, signaling indicative of a plurality of operations to be performed on data written to or read from the non-volatile memory device. The method can further include performing, at the processing unit, at least one operation of the plurality of operations in response to the signaling. The method can further include accessing a portion of a memory array in the non-volatile memory device. The method can further include transmitting additional signaling indicative of a command to perform one or more additional operations of the plurality of operations on the data written to or read from the non-volatile memory device.

Abstract: A motor drive system includes: an inverter that drives a motor; a current detector that detects and outputs the first signal that is a current value of a current flowing through the inverter; a first low-pass filter that removes a noise frequency component from the first signal and outputs a second signal that is a current value after the noise frequency component has been removed; a demagnetization current determiner that compares a demagnetization current threshold with the second signal, and outputs a demagnetization protection signal when the second signal takes a value larger than the demagnetization current threshold; and a short circuit determiner that compares a third signal with a short circuit and outputs an anomaly signal for stopping the inverter when the third signal takes a value larger than or equal to the short circuit threshold.

Abstract: A method for designing a customized robot to perform a specified function begins by initially creating an electronic library of data about modules and accessories for a robot assembly. The library stores, for each module and accessory, at least firmware for operation and dimensions. Per robot, the method includes receiving a set of functions and requirements of the customized robot, generating design(s) for the customized robot by finding a set of modules or accessories which match at least one of its functions and requirements, based on information in the electronic library, performing a set of validation tests of each design against criteria, identifying the design(s) which passed the set of validation tests, and generating a list of modules and accessories of a selected design and a connection map for the selected design indicating how the modules and accessories are to be connected together to form the customized robot.

Abstract: A system-in-package includes a function circuit and a protection circuit that protects the function circuit by preventing an instantaneous transient voltage from being applied to the function circuit. Here, the protection circuit includes a TVS diode and a capacitor. The TVS diode includes an anode that receives a ground voltage and a cathode that is connected to a first external connection terminal. The capacitor includes a first terminal that is connected to a second external connection terminal electrically separated from the first external connection terminal and a second terminal that receives the ground voltage.

Abstract: Disclosed herein is a memory cell including a memory element and a selector device. Data may be stored in both the memory element and selector device. The memory cell may be programmed by applying write pulses having different polarities and magnitudes. Different polarities of the write pulses may program different logic states into the selector device. Different magnitudes of the write pulses may program different logic states into the memory element. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities and magnitudes of the write pulses.

Abstract: Methods, systems, and devices for an improved power supply for a memory device are described. An apparatus may include a memory device, one or more voltage detectors, and one or more voltage converters. A voltage detector may generate an output indicating whether a voltage at a first pin of the apparatus satisfies a threshold. A voltage converter may be coupled with the voltage detector and may be configured to selectively output a second voltage depending on the output of the voltage detector. Circuitry within the memory device may be coupled with one or more voltage detectors and one or more voltage converters and configured to select a supply voltage for another component of the memory device from among the first voltage (e.g., received from the first pin) and the second voltage (e.g., selectively generated and output by the voltage converter) based on the output from the voltage detector.

Abstract: Methods, systems, and devices for current budget adaption are described. A controller may be coupled with a set of memory devices. The controller may receive current consumption information from the set of memory devices and update a current consumption budget for the set of memory devices based on the current consumption information.

Abstract: An extension panel may include a mating surface shaped to interface with a back surface of a clamp that includes a mounting hole corresponding to a bolt slot in the back surface of the clamp to accommodate a single bolt passing through the extension panel and the clamp. The extension panel may also include a pair of flanges projecting outward from the mating surface and positioned to be on either side of the clamp. The extension panel may also include a flat top surface generally parallel and aligned linearly with another flat top surface of a flexible member. The extension flat top surface may be sized to be approximately a same width as the flexible member at a first end of the extension flat top surface proximate the mating surface and may flare out as the extension flat top surface extends away from the flexible member.

Abstract: An electric motor for a vehicle includes a stator, a rotor and a plurality of independent bridge drivers. Each bridge driver supplies a portion of current to the electric motor. There may be a phase shift between each independent bridge driver. Optionally, each bridge driver delivers current at a slew rate that is different from each other independent bridge driver.

Abstract: A memory device and an operation method thereof are disclosed. The memory device includes a P-well region, a common source line, a ground selection line, at least one dummy ground selection line, a plurality of word lines, at least one dummy string selection line, a string selection line, at least one bit line and at least one memory string. The gates of a plurality of memory cells of the memory string are connected to the word lines. The operation method includes the following steps. Performing a read operation and applying a read voltage on the selected word line. Applying a pass voltage on other unselected word lines and the ground selection lines, etc. Before ending of the read operation, firstly decreasing voltages of the string selection line and the dummy string selection line in advance, then increasing voltage of the bit line.

Abstract: The invention relates to a lightweight photovoltaic module (1) comprising: a transparent first layer (2) forming the front face, photovoltaic cells (4), an assembly (3) encapsulating the photovoltaic cells (4), and a second layer (5), the encapsulating assembly (3) and the photovoltaic cells (4) being arranged between the first (2) and the second (5) layer. The invention is characterised in that the first layer (2) comprises a polymer material and has a thickness (e2) of less than 50 ?m, in that the second layer (5) comprises at least one composite material of the prepreg type containing polymer resin and fibres and has a areal weight of less than 150 g/m2, and in that the encapsulating assembly (3) has a maximum thickness (e3) of less than 150 ?m.

Abstract: There is provided a solar power generator having a variable shape which can secure a maximum solar power generation area by being unfolded horizontally and upward in the case of performing solar power generation and can be transformed to have a minimum volume by being transformed into a box shape in the case of not performing solar power generation. The solar power generator includes a base frame, four solar panel members for forming a box which are respectively coupled to four sides of the base frame, a rotation drive source for rotating each of the four solar panel members, a tube member, a lower surface of which is fixed to a center portion of an upper surface of the base frame, an air injection and discharge part, a top plate for the tube member, and a plurality of solar panel assemblies for tube member sidewalls.

Abstract: A memory system separately programs memory cells connected by a common word line to multiple sets of data states with the set of data states having higher threshold voltage data states being programmed before the set of data states having lower threshold voltage data states. The memory system also separately programs memory cells connected by an adjacent word line to the multiple sets of data states such that memory cells connected by the adjacent word line are programmed to higher data states after memory cells connected by the common word line are programmed to higher data states and prior to memory cells connected by the common word line are programmed to lower data states.

Abstract: A plurality of memory units residing in a first location of a memory device is identified, wherein the first location of the memory device corresponds to a first layer of a plurality of layers of the memory device. It is determined whether a write disturb capability associated with the first location of the memory device satisfies a threshold criterion. Responsive to determining that the write disturb capability associated with the first location of the memory device satisfies the threshold criterion, a plurality of logical addresses associated with the plurality of memory units is remapped to a second location of the memory device, wherein the second location of the memory device corresponds to a second layer of the plurality of layers of the memory device, and wherein a write disturb capability associated with the second location of the memory device does not satisfy the threshold criterion.