Abstract: Disclosed are apparatuses and techniques for fabricating an apparatus including a semiconductor device. The semiconductor device may include: a die, a thermally conductive interface that includes a thermal bridge interposer (THBI) structure, and a substrate. The die is coupled to the substrate by the thermally conductive interface and at least a portion of the die is coupled to the substrate by the THBI structure.

Abstract: A semiconductor device package includes a substrate; an electronic component disposed on the substrate; multiple supporting structures disposed on the substrate; and a reinforced structure disposed on the supporting structures and extending in parallel with the substrate.

Abstract: A light emitting substrate, a wiring substrate and a display device are provided. The light emitting substrate includes light emitting units and a first electrode wire. The first electrode wire includes a first wire and a second wire. The light emitting units include first light emitting units and second light emitting units, a position of each first light emitting unit is a first light emitting unit region, a position of each second light emitting unit is is a second light emitting unit region, the first wire is connected with the first light emitting unit, passes through the first light emitting unit region and is located at an outer side of the second light emitting unit region, the second wire is connected with the second light emitting unit, passes through the second light emitting unit region and is located at an outer side of the first light emitting unit region.

Abstract: A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driver includes second gate electrodes, and the first gate electrodes have lengthwise directions aligned to lengthwise directions of respective ones of the second gate electrodes.

Abstract: A display device with high display quality and low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel, and then the light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. One of a source and a drain of the first transistor is electrically connected to the first light-emitting diode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the second light-emitting diode through the third conductive layer. The first conductive layer supplied with a constant potential is electrically connected to the other electrodes of the first and second light-emitting diodes through the fourth conductive layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first stacked nanostructure and a second stacked nanostructure formed over a substrate, and a dummy fin structure between the first stacked nanostructure and the second stacked nanostructure. The semiconductor device structure includes a gate structure formed over the first stacked nanostructure and the second stacked nanostructure, and a conductive layer formed over the gate structure. The semiconductor device structure includes a capping layer formed over the dummy fin structure, and each of the gate structure and the conductive layer is divided into two portions by the capping layer.

Abstract: Semiconductor device assemblies are provided with one or more layers of thermally conductive material disposed between adjacent semiconductor dies in a vertical stack. The thermally conductive material can be configured to conduct heat generated by one or more of the semiconductor dies in laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), or via adhering a film comprising the layer of thermally conductive material to one or more of the semiconductor dies.

Abstract: Provided is a package structure including a substrate, a stiffener ring, an eccentric die, a lid layer, and a buffer layer. The stiffener ring is disposed on the substrate. The stiffener ring has an inner perimeter to enclose an accommodation area. The eccentric die is disposed within the accommodation area on the substrate. The eccentric die is offset from a center of the accommodation area to close to a first side of the stiffener ring. The lid layer is disposed on the stiffener ring and overlays the eccentric die. The buffer layer is embedded in the lid layer between the first side of the stiffener ring and the eccentric die. The buffer layer has a thickness less than a thickness of the lid layer.

Abstract: An integrated circuit package including a substrate configured to receive one or more high-bandwidth memory (HBM) stacks on the substrate, an interposer positioned on the substrate and configured to receive a logic die on the interposer, a plurality of interposer channels formed in the interposer and connecting the logic die to the one or more HBM stacks, and a plurality of substrate traces formed in the substrate and configured to interface the plurality of interposer channels to the one or more HBM stacks.

Abstract: Embodiments provide a method for packaging a semiconductor, a semiconductor package structure, and a package. The packaging method includes: providing a substrate wafer having a first surface and a second surface arranged opposite to each other, the first surface having a plurality of grooves, a plurality of electrically conductive pillars being provided at a bottom of the groove, and the electrically conductive pillar penetrating through the bottom of the groove to the second surface; providing a plurality of semiconductor die stacks; placing the semiconductor die stack in the groove; and filling an insulating dielectric in a gap between a sidewall of the groove and the semiconductor die stack to form an insulating dielectric layer covering an upper surface of the semiconductor die stack to seal up the semiconductor die stack so as to form the semiconductor package structure.

Abstract: Leadless power amplifier (PA) packages having topside termination interposer (TTI) arrangements, and associated fabrication methods, are disclosed. Embodiments of the leadless PA package include a base flange, a first set of interposer mount pads, a first RF power die, a package body. The first RF power die is attached to a die mount surface of the base flange and electrically interconnected with the first set of interposer mount pads. The TTI arrangement is electrically coupled to the first set of interposer mount pads and projects therefrom in the package height direction. The package body encloses the first RF power die and having a package topside surface opposite the lower flange surface. Topside input/output terminals of the PA package are accessible from the package topside surface and are electrically interconnected with the first RF power die through the TTI arrangement and the first set of interposer mount pads.

Abstract: A 3D IC structure includes multiple die layers, such as a top die layer and a bottom die layer. The top die layer and/or the bottom die layer each includes devices such as computing units, Analog-to-Digital converters, analog circuits, RF circuits, logic circuits, sensors, Input/Output devices, and/or memory devices. The devices on the first and the second die layers are laterally surrounded by, or adjacent, vertical interconnect structures (VIS).

Abstract: Semiconductor devices and methods of manufacture which utilize lids in order to constrain thermal expansion during annealing are presented. In some embodiments lids are placed and attached on encapsulant and, in some embodiments, over first semiconductor dies. As such, when heat is applied, and the encapsulant attempts to expand, the lid will work to constrain the expansion, reducing the amount of stress that would otherwise accumulate within the encapsulant.

Abstract: A method includes bonding a first package and a second package over a package component, adhering a first Thermal Interface Material (TIM) and a second TIM over the first package and the second package, respectively, dispensing an adhesive feature on the package component, and placing a heat sink over and contacting the adhesive feature. The heat sink includes a portion over the first TIM and the second TIM. The adhesive feature is then cured.

Abstract: A semiconductor die package that has a substrate with one or more substrate layers with one or more substrate connections. A substrate layer can include one or more redistribution layers (RDLs). One or more dies (e.g., multiple dies) are disposed on a top substrate layer. The dies have one or more die external connections. Some of the die external connections are electrically connected to one or more substrate connections. One or more metallic dam stiffeners form into a dam enclosure that is disposed on and physically connected to the top substrate layer. The dam enclosure encloses one or more of the dies. The metallic dam enclosure has one or more electrically connected regions where the metallic dam enclosure is electrically connected to one or more of the substrate horizontal connections and one or more electrically insulated regions where the metallic dam enclosure is electrically insulated from one or more of the substrate horizontal connections and the substrate via connections.

Abstract: A package structure includes a lower substrate, substrate connection terminals on the lower substrate, a semiconductor package on the substrate connection terminals, the semiconductor package including a package substrate and a first encapsulant covering the package substrate, first underfills between the lower substrate and the semiconductor package, the first underfills covering corner portions of the semiconductor package, as viewed in a plan view, and covering at least one of the substrate connection terminals, and a second underfill between the lower substrate and the semiconductor package, the second underfill covering a side surface of the semiconductor package in a plan view.

Abstract: A semiconductor device, the device comprising: a first substrate; a first metal layer disposed over said substrate; a second metal layer disposed over said first metal layer; a first level comprising a plurality of transistors, said first level disposed over said second metal layer, wherein said plurality of transistors comprise single crystal silicon; a third metal layer disposed over said first level; a fourth metal layer disposed over said third metal layer, wherein said fourth metal layer is aligned to said first metal layer with a less than 200 nm alignment error; and a via disposed through said first level, wherein said via has a diameter of less than 450 nm, wherein said fourth metal layer provides a global power distribution, and wherein said via is directly connected to at least one of said plurality of transistors.

Abstract: A semiconductor device, the device including: a first substrate; a first metal layer disposed over the first substrate; a second metal layer disposed over the first metal layer; a first level including a plurality of transistors, the first level disposed over the second metal layer, where the plurality of transistors each include single crystal silicon; a third metal layer disposed over the first level; a fourth metal layer disposed over the third metal layer, where the fourth metal layer is aligned to the first metal layer with a less than 200 nm alignment error; and a via disposed through the first level, where the via has a diameter of less than 450 nm, where the fourth metal layer provides a global power distribution, and where processing of the device includes use of a carrier wafer.

Abstract: A semiconductor device, including a dielectric layer and a semiconductor substrate, is provided. The dielectric layer has a convexity or a concavity. The semiconductor substrate includes a first type semiconductor layer and a second type semiconductor layer sequentially stacked on the dielectric layer. The first type semiconductor layer is disposed on the convexity or the concavity. A top surface and a bottom surface of the first type semiconductor layer are protruded according to the convexity or recessed according to the concavity. A bottom surface of the second type semiconductor layer is protruded according to the convexity or recessed according to the concavity.

Abstract: A semiconductor package including a first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip, and a third semiconductor chip disposed on the second semiconductor chip. A first pad is disposed on a top surface of the second semiconductor chip, and includes a first portion and a second portion protruding in a vertical direction from the first portion. A width of the first portion in a first horizontal direction is greater than a width of the second portion in the first horizontal direction. A second pad is disposed on a bottom surface of the third semiconductor chip facing the top surface of the second semiconductor chip, and a solder ball is disposed as surrounding a sidewall of the second portion of the first pad between the first pad and the second pad.