Patents Examined by Thomas Pham
  • Patent number: 9685187
    Abstract: A chip-to-chip eutectic bonding system includes a stage with a top surface, a bottom surface, and a plurality of vacuum apertures extending therebetween and a carrier with a top surface, the top surface including one or more smooth surface portions and one or more rough surface portions, wherein at least one smooth carrier surface portion laterally aligns to at least one vacuum aperture, and at least one of the stage's rough surface portions frictionally couples to at least one of the carrier's rough surface portions when the carrier top surface couples to and opposes the stage bottom surface.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: June 20, 2017
    Assignee: WESTERN DIGITAL (FREMONT), LLC
    Inventors: Bin Ouyang, Chee Kheng Lim
  • Patent number: 9679770
    Abstract: A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: June 13, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hidetami Yaegashi
  • Patent number: 9660182
    Abstract: A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: May 23, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takashi Sone, Daisuke Urayama, Masato Kushibiki, Nao Koizumi, Wataru Kume, Eiichi Nishimura, Fumiko Yamashita
  • Patent number: 9640396
    Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: May 2, 2017
    Assignee: Brewer Science Inc.
    Inventors: Qin Lin, Rama Puligadda, James Claypool, Douglas J. Guerrero, Brian Smith
  • Patent number: 9620336
    Abstract: A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. Adjacent to an upper surface of the electrostatic chuck, a first electrostatic attraction electrode and a second electrostatic attraction electrode are incorporated. The first electrostatic attraction electrode is of unipolar type and electrostatically attracts the wafer via the holding sheet. The second electrostatic electrode is of bipolar type and electrostatically attracts the frame via the holding sheet as well as a holding sheet between the wafer and the frame. Both of plasma processing performance and electrostatic attraction performance are improved.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: April 11, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD
    Inventor: Shogo Okita
  • Patent number: 9587296
    Abstract: Provided in one embodiment is a method of forming a movable joint or connection between parts that move with respect to one another, wherein at least one part is at least partially enclosed by at least one second part. The method includes positioning an etchable material over an at least one first part, molding or forming an at least one second part over at least the etchable material, and removing the etchable material.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: March 7, 2017
    Assignee: Apple Inc.
    Inventors: Christopher D. Prest, Joseph C. Poole, Matthew S. Scott, Dermot J. Stratton
  • Patent number: 9573303
    Abstract: A manufacturing method of metal and plastic composite bodies integrated by etching a surface of a metal member and forming a thermoplastic resin on an etching surface may include forming a printing layer which prints a pattern or a character on an exposed surface of a metal member and a protective layer for protecting the printed pattern thereon, grease-removing and cleaning to remove a passivation oxidized film at a rear side of the metal member to be integrally coupled with a plastic portion, surface-treating a surface by using and etching a ferric chloride solution in a range of pH 3 to 4.5 so as to form a minute unevenness at the rear side, removing a smut generated in the surface-treating process, and molding for integrally forming the plastic portion with the metal member.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: February 21, 2017
    Assignees: Hyndai Motor Company, Kia Motors Corporation, Hankook National Co., Ltd.
    Inventors: Byung Seob Yu, Yang Gi Lee, Chan Mook Choi, Hyung Chul Kim
  • Patent number: 9575215
    Abstract: An exemplary method for making a light blocking plate includes the steps of providing a flat plate-like light pervious member; forming a plurality of spaced ceramic power layers on the light pervious member; forming a light blocking layer over the light pervious member and side faces of the ceramic power layers; forming an electromagnetic shielding layer over the light blocking layer; removing top portions of the ceramic power layers with remaining portions of the ceramic power layers thus exposed; and removing the remaining portions of the ceramic power layers.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: February 21, 2017
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventor: Shao-Kai Pei
  • Patent number: 9548211
    Abstract: The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method comprises abrading a surface of substrate with a polishing composition that comprises a particulate abrasive, at least one acidic buffering agent, and an aqueous carrier.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: January 17, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: William Ward, Timothy Johns
  • Patent number: 9540246
    Abstract: A method of making porous silicon using a chemical etchant comprising metal ions is described.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: January 10, 2017
    Assignee: PSIMEDICA LIMITED
    Inventors: Leigh Trevor Canham, Armando Loni
  • Patent number: 9535330
    Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: January 3, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yuriko Shirai, Naohisa Ueno, Takuya Ohhashi
  • Patent number: 9536752
    Abstract: The present invention provides a slurry for chemical mechanical polishing comprising water-soluble clathrate compound (a), polymer compound (b) having an acidic group optionally in a salt form as a side chain, polishing abrasive grain (c) and water (d), wherein the content of the water-soluble clathrate compound (a) is 0.001 mass %-3 mass % of the total amount of the slurry, the polymer compound (b) has a weight average molecular weight of not less than 1,000 and less than 1,000,000, and the content of the polymer compound (b) is 0.12 mass %-3 mass % of the total amount of the slurry, and a polishing method for substrate using the slurry.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: January 3, 2017
    Assignee: KURARAY CO., LTD.
    Inventors: Minori Takegoshi, Mitsuru Kato, Chihiro Okamoto, Shinya Kato
  • Patent number: 9492893
    Abstract: Method for manufacturing a sample for microstructural materials diagnostics, especially for transmission electron microscopy examinations, for scanning electron microscopy examinations for transmission electron-backscatter diffraction, for Rutheford backscatter diffraction, for elastic recoil detection analysis, for X-ray absorption spectroscopy or for X-ray diffraction, comprising detaching a basic structure from a preferably flat substrate by irradiating the substrate with a high energy beam, preferably with a laser beam, wherein the basic structure comprises a supported structure being supported by a supporting structure, preferably a cantilever beam which is supported at least at one of its both ends, preferably at both of its ends, by the supporting structure, the supporting structure being configured to be held by a jig, preferably to be clamped in the jig, and thinning the supported structure at least in sections by cutting, preferably by grazing, its surface, preferably at least at one of its lateral
    Type: Grant
    Filed: April 2, 2014
    Date of Patent: November 15, 2016
    Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Michael Krause, Thomas Hoeche
  • Patent number: 9493347
    Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: November 15, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Yi-Shao Liu, Allen Timothy Chang, Ching-Ray Chen, Yeh-Tseng Li, Wen-Hsiang Lin
  • Patent number: 9483148
    Abstract: A method of manufacturing a touch substrate is disclosed. The method includes forming a shading layer on one lateral surface of a base substrate, forming a first transparent conductive film on the other lateral surface of the base substrate, and forming the first conductive film into an auxiliary lead layer with a patterning process using the shading layer as a mask pattern. The method also includes forming a driving electrode on the base substrate, and forming a sensing electrode on the base substrate.
    Type: Grant
    Filed: June 12, 2014
    Date of Patent: November 1, 2016
    Assignees: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD., TIANMA MICRO-ELECTRONICS CO., LTD.
    Inventor: Xiangjian Kong
  • Patent number: 9373518
    Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: June 21, 2016
    Assignee: Intermolecular, Inc.
    Inventors: Edwin Adhiprakasha, Shuogang Huang
  • Patent number: 9373429
    Abstract: According to an aspect of an exemplary embodiment, there is provided a method of obtaining graphene, the method comprising: preparing a graphene forming structure of which a first graphene is formed on one surface and a second graphene is formed on another surface, and that comprises at least one metal catalyst member; disposing a first carrier and a second carrier on the first graphene and the second graphene, respectively; and removing the metal catalyst member by applying an etchant to a side surface of the graphene forming structure while winding up the first carrier and the second carrier by respectively rotating a pair of rolls formed to face each other.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: June 21, 2016
    Assignee: Hanwha Techwin Co., Ltd.
    Inventors: Na-young Kim, Jae-Chul Ryu
  • Patent number: 9371251
    Abstract: A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material by reactive-ion etching, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple silicon oxide or a mixed silicon oxide, most of the oxides in the case of a mixed oxide being silicon oxide, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the silicon of the oxide, a molar percentage of the species in the material ranging from 1 mol % or even up to 50 mol % while remaining below the percentage of the silicon oxide, at least most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the etching; structuring the surface of the hybrid material, without masking, with etching that lasts less t
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: June 21, 2016
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Elin Sondergard, S├ębastien Le Roy, Alban Letailleur, Constance Magne
  • Patent number: 9371250
    Abstract: A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material, by ion erosion, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple oxide or a mixed oxide of one or more elements, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the one or more elements of the oxide, a molar percentage of the species in the material ranging from 6 mol % up to 50 mol % while remaining below the percentage of the oxide, most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the erosion; structuring the surface of the hybrid material with an erosion that lasts less than one hour over an erosion area greater than 1 cm2, until the array of features is formed, the
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: June 21, 2016
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Elin Sondergard, S├ębastien Le Roy, Alban Letailleur, Etienne Barthel, Constance Magne
  • Patent number: 9358370
    Abstract: Embodiments hereof relate to a guidewire formed from an elongated shaft, at least a portion of the shaft having an outer layer, a plurality of channels formed through the outer layer, and an inner core. The outer layer is formed from a material non susceptible to erosion by an erosion agent and the inner core is formed from a radiopaque material susceptible to erosion by the erosion agent. When exposed to the erosion agent, core material adjacent to the channels is removed to form a pattern of integral radiopaque segments or markers with a plurality of voids therebetween. By controlling the location of channels and the rate of erosion of the core material, the pattern of integral radiopaque segments and voids allow for in situ measurement when viewed under fluoroscopy.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: June 7, 2016
    Assignee: Medtronic Vascular, Inc.
    Inventors: Mark L. Stiger, Richard L. Thomas