Abstract: A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.

Abstract: A mounting table includes a base member, having a rear surface and a front surface facing the rear surface, in which a coolant path is formed, a groove portion having a bottom surface within the base member being annularly formed on the front surface, the base member being divided into a cylindrical inner base member portion positioned at an inner side of the groove portion and an annular outer base member portion positioned at an outer side of the groove portion by the groove portion; an annular focus ring supported by the outer base member portion, the annular focus ring having, at an inner side surface thereof, a protrusion that is protruded radially and inwardly to cover the groove portion; a first heat transfer member provided between the mounting surface and the coolant path; and the second heat transfer member provided between the focus ring and the coolant path.

Abstract: Systems for depositing coatings onto surfaces of molds and other articles are generally provided. In some embodiments, a system is adapted and arranged to cause gaseous species to flow parallel to a filament array. In some embodiments, a system comprises one or more mold supports that are translatable.

Abstract: There is provided a rotation detection jig used for an apparatus in which a substrate is processed inside a processing container by rotating a mounting stand for a substrate provided on one surface side of a rotary table while revolving the mounting stand with rotation of the rotary table, and supplying a processing gas to a region through which the mounting stand passes, including: a rotating element configured to rotate about a rotation shaft of the mounting stand; an encoder main body configured to detect a rotation angle of the rotating element and configured to constitute a rotary encoder together with the rotating element; a fixing member configured to fix the encoder main body to a rotating portion including the rotary table; and a signal processing part provided in the rotating portion and configured to process a detection signal detected by the encoder main body.

Abstract: A deposition mask assembly for manufacturing a plurality of display devices includes a frame having an opening area, a first open mask disposed on the frame and having a first body portion defining a plurality of patterns overlapping the opening area, and a second open mask disposed on the first open mask and having a second body portion defining a plurality of opening portions overlapping the patterns of the first open mask, in which each of the patterns includes an auxiliary pattern spaced apart from the first body portion and a first bridge pattern connecting the first body portion and the auxiliary pattern.

Abstract: An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, and an adjustable bottom electrode. The low contamination chamber is configured to adjust a distance between the adjustable top electrode and the adjustable bottom electrode in response to a desired density of plasma and a measured density of plasma measured between the adjustable top electrode and the adjustable bottom electrode during a surface activation process. The low contamination chamber further includes an outlet.

Abstract: Implementations disclosed herein generally provide a lift pin that can improve the deposition rate and uniform film thickness above lift pin areas. In one implementation, the lift pin includes a first end coupling to a shaft, the first end having a pin head, and the pin head having a top surface, wherein the top surface is planar and flat, and a second end coupling to the shaft, the second end having a flared portion, wherein the flared portion has an outer surface extended along a direction that is at an angle of about 110° to about 140° with respect to a longitudinal axis of the lift pin.

Abstract: A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.

Abstract: In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

Abstract: A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate.

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

Abstract: The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates (100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates (100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).

Abstract: An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus includes a chamber having a space therein in which the substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The support unit includes a support plate on which the substrate is placed, a high-frequency power supply that supplies high-frequency power to the support plate, and a high-frequency transmission line through which the high-frequency power is supplied from the high-frequency power supply to the support plate. Characteristic impedance of the high-frequency transmission line is variable.

Abstract: Embodiments of the invention provide a bearing device and a plasma processing apparatus. According to at least one embodiment, the bearing device includes a base, a base driving mechanism, a pressing ring and a baffle ring.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.