Abstract: Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.

Abstract: A mounting table includes a base member, having a rear surface and a front surface facing the rear surface, in which a coolant path is formed, a groove portion having a bottom surface within the base member being annularly formed on the front surface, the base member being divided into a cylindrical inner base member portion positioned at an inner side of the groove portion and an annular outer base member portion positioned at an outer side of the groove portion by the groove portion; an annular focus ring supported by the outer base member portion, the annular focus ring having, at an inner side surface thereof, a protrusion that is protruded radially and inwardly to cover the groove portion; a first heat transfer member provided between the mounting surface and the coolant path; and a second heat transfer member provided between the focus ring and the coolant path.

Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.

Abstract: A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.

Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

Abstract: An apparatus for supporting a wafer during a plasma processing operation includes a pedestal configured to have bottom surface and a top surface and a column configured to support the pedestal at a central region of the bottom surface of the pedestal. An electrical insulating layer is disposed over the top surface of the pedestal. An electrically conductive layer is disposed over the top surface of the electrical insulating layer. At least three electrically conductive support structures are distributed on the electrically conductive layer. The at least three support structures are configured to interface with a bottom surface of a wafer to physically support the wafer and electrically connect to the wafer. An electrical connection extends from the electrically conductive layer to connect with a positive terminal of a direct current power supply at a location outside of the pedestal.

Abstract: The present invention provides chucks having a well that supports rods produced during chemical vapor deposition. The chucks can utilize slats and windows around the well up to which the rod can grow and become supported.

Abstract: Implementations disclosed herein generally provide a lift pin that can improve the deposition rate and uniform film thickness above lift pin areas. In one implementation, the lift pin includes a first end coupling to a shaft, the first end having a pin head, and the pin head having a top surface, wherein the top surface is planar and flat, and a second end coupling to the shaft, the second end having a flared portion, wherein the flared portion has an outer surface extended along a direction that is at an angle of about 110° to about 140° with respect to a longitudinal axis of the lift pin.

Abstract: Implementations disclosed herein relate to methods and apparatus for zoned temperature control during a film forming process. In one implementation, a substrate processing apparatus is provided. The substrate processing apparatus comprises a vacuum chamber, a plurality of power supplies coupled with the plurality of thermal laps and a controller that adjusts the power supplies based on input from radiation sensors. The chamber includes a sidewall defining a processing region. A plurality of thermal lamps is positioned external to the processing region. A window is positioned between the plurality of thermal lamps and the processing region. A radiation source is disposed within the sidewall and oriented to direct radiation toward an area proximate a substrate support. A radiation sensor is disposed on the side of the substrate support opposite the plurality of thermal lamps to receive emitted radiation from the radiation source.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.

Abstract: The present invention provides a method for cleaning a carbon coating film, which can clean the carbon coating film that is formed on each portion of a plasma CVD device, and provides the plasma CVD device. The plasma CVD device 1 includes: first and second sealing members 2a and 2b which are formed of insulators and seal both ends of a workpiece W or a dummy workpiece W?, respectively; an anode 3; decompression units 26 which decompress the inside of the workpiece W or the dummy workpiece W?; a source-gas supply unit 6 which supplies a source gas to the inside of the workpiece W; a power source 27; and an oxygen-gas supply unit 8 which supplies oxygen gas to the inside of the dummy workpiece W?.

Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with a combination of proportional and pulsed fluid control valves. A heat transfer fluid loop is thermally coupled to a chamber component, such as a chuck. The heat transfer fluid loop includes a supply line and a return line to each of hot and cold fluid reservoirs. In an embodiment, an analog valve (e.g., in the supply line) is controlled between any of a closed state, a partially open state, and a fully open state based on a temperature control loop while a digital valve (e.g., in the return line) is controlled to either a closed state and a fully open state.

Abstract: A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step.

Abstract: Embodiments of the disclosure provide methods and apparatus for monitoring film properties on a substrate in-situ. In one embodiment, a deposition system is provided. The deposition system includes at least two deposition chambers, and a patterned mask designed specifically for each of the deposition chambers, wherein a first mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, and a second mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, the first opening of the second mask having a position on the second mask that is different than a position of the first opening on the first mask.

Abstract: A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and byproducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.

Abstract: Embodiments of a reflective surface and a reflector comprising a reflective surface for use in a thermal decomposition reactor are disclosed. Methods for using the reflective surface, or reflector comprising the reflective surface, to manage a temperature profile in a silicon rod grown in the thermal decomposition reactor are also disclosed. The reflective surface is configured to receive radiant heat energy emitted from an energy emitting region of an elongated polysilicon body grown during chemical vapor deposition onto a silicon filament and reflect at least a portion of the received radiant heat energy to a reflected energy receiving region of the elongated polysilicon body or to a reflected energy receiving region of a second elongated polysilicon body, to thereby add radiant heat energy to the reflected energy receiving region.

Abstract: An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing.

Abstract: A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member.