Abstract: Apparatus and methods for processing a semiconductor wafer including a susceptor assembly with recesses comprising at least three lift pins. The lift pins include a sleeve with a spring and pin positioned therein. The spring and pin elevate the wafer to a position where the wafer can be pre-heated and, upon compression, lowers the wafer to a processing position.

Abstract: The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas. The support unit includes a support plate on which a substrate is loaded, a focus ring disposed to surround the support plate, an electric field adjusting ring disposed under the focus ring, and an actuator vertically moving the electric field adjusting ring.

Abstract: A vacuum processing apparatus includes a tilting unit configured to tilt, in a vacuum vessel, a substrate holder including a refrigerator, and a rotary joint provided in the tilting unit and including a coolant path configured to supply or exhaust a coolant gas to or from the refrigerator. The rotary joint includes a fixed portion fixed to the vacuum vessel, a pivotal portion provided so as to pivot with respect to the fixed portion and fixed to the substrate holder, and a grease supply passage.

Abstract: An apparatus and method for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a ring heater assembly disposed along the outer circumference of the platen. The ring heater assembly includes heating elements disposed therein or thereon, where these heating elements create heat, which serves to warm the outer edge of the workpiece. In some embodiments, the ring heater assembly extends beyond the edge of the workpiece and may be exposed to the ion beam.

Abstract: Apparatus and methods for simultaneously supporting multiple workpieces inside a processing space of a plasma processing system for simultaneous two-sided plasma processing. The apparatus may be a fixture having a carrier plate configured to be supported inside the processing space and a plurality of first openings extending through the thickness of the carrier plate. The carrier plate is configured to contact each of the workpieces over an annular region at an outer peripheral edge so that the first and second sides of each of the workpieces is exposed to the plasma through a respective one of said plurality of first openings.

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.

Abstract: A substrate holder mounting device is provided that is compact and has a simple structure. The substrate holder mounting device according to the present invention is provided with: a first and a second mounting mechanisms (5, 7) that are housed in a chamber and that are respectively configured to be capable of mounting a plurality of substrate holders along a row; row direction drive means that moves the first mounting mechanism to a row direction relatively with respect to the second mounting mechanism; a shifting mechanism (30) that shifts the substrate holders between the first and second mounting mechanisms; and a link-up mechanism that changes positions of the substrate holders in the row direction in the first or second mounting mechanism by a linkage between the shifting mechanism and the above-described row direction drive means.

Abstract: Chamber elements defining an internal chamber to be utilized during a substrate related stage selected from the group consisting of substrate manufacturing stage and substrate inspection stage, the chamber elements comprising: a first element having a first surface; a second element having a second surface about the periphery of the internal chamber; a third element connected to the second element; and a clamping mechanism that is connected to the second and third elements and is arranged to press the second element towards the first element; wherein a first area of the first surface and a second area of the second surface come into proximity with each other at a first interface; wherein the first surface is positioned above the second surface; wherein a gas groove and a vacuum groove are formed in the second area; wherein the second element comprises a gas conduit that is arranged to provide gas to the gas groove and a vacuum conduit that is arranged to provide vacuum to the vacuum groove; wherein a provisio

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

Abstract: Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

Abstract: Disclosed is an apparatus for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes at least one nozzle head having two or more two or more precursor zones for subjecting the surface of the substrate to at least the first and second precursors and a moving mechanism for moving the nozzle head in oscillating movement between a first end position and a second end position. The moving mechanism is arranged to store at least part of the kinetic energy of the nozzle head released in oscillating movement of the nozzle head.

Abstract: A process tuning kit for use in a chemical deposition apparatus wherein the process tuning kit includes a carrier ring, horseshoes and shims. The horseshoes have the same dimensions and the shims are provided in sets with different thicknesses to control the height of the horseshoes with respect to an upper surface of a pedestal assembly on which the horseshoes and shims are mounted. A semiconductor substrate is transported into a vacuum chamber of the chemical deposition apparatus by the carrier ring which is placed on the horseshoes such that minimum contact area supports lift the substrate from the carrier ring and support the substrate at a predetermined offset with respect to an upper surface of the pedestal assembly. During processing of the substrate, backside deposition can be reduced by using shims of desired thickness to control the predetermined offset.

Abstract: Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.