Abstract: A substrate processing apparatus includes: a mounting stand for mounting a substrate thereon; a support rod for supporting the mounting stand from below; a revolution mechanism provided below the mounting stand and for supporting the support rod to revolve the mounting stand; a heating part provided between the mounting stand and the revolution mechanism as seen in a height direction and for heating a revolution region of the mounting stand; a heat transfer plate provided between the heating part and the revolution region and for radiating a heat generated from the heating part to the revolution region; and a processing gas supply part for supplying a processing gas to the revolution region. Each of the heating part and the heat transfer plate is divided into a center side and an outer side of the processing container via a gap so as to form a movement path of the support rod.

Abstract: A vapor deposition mask device includes a vapor deposition mask having an effective region in which a plurality of first through holes is disposed, and a frame attached to the vapor deposition mask. The vapor deposition mask device includes a plurality of joint portions that joins the vapor deposition mask and the frame to each other. The plurality of joint portions is arranged along the outer edge of the vapor deposition mask. A notch is formed at a position corresponding to between two adjacent joint portions in the outer edge of the vapor deposition mask.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. A lower surface of the second ring component contains an upper alignment coupling and an upper surface of the adjustable tuning ring contains a lower alignment coupling. The lower alignment coupling of the adjustable tuning ring is configured to mate with the upper alignment coupling of the second ring component to form an interface. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

Abstract: Methods of and carriers for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a cover ring for protecting a carrier and substrate assembly during an etch process includes an inner opening having a diameter smaller than the diameter of a substrate of the carrier and substrate assembly. An outer frame surrounds the inner opening. The outer frame has a bevel for accommodating an outermost portion of the substrate of the carrier and substrate assembly.

Abstract: A system for fabricating a semiconductor device structure includes a tool comprising a chamber and a platform within the chamber configured to receive a semiconductor device structure thereon. The tool further includes a heating and cooling system in operable communication with the platform and configured to control a temperature of the platform.

Abstract: Disclosed are a support unit and a substrate treating apparatus comprising the same. The inventive concept provides a support unit that may prove temperature uniformity between facing areas on a substrate the other areas of the substrate and may solve a problem of not easily separating a substrate by a negative pressure in a pin hole when the substrate is separated from the support unit, and a substrate treating apparatus.

Abstract: Temperature uniformity in a mounting surface of a mounting table is improved. A plasma processing apparatus includes the mounting table having thereon the mounting surface on which a work-piece serving as a plasma processing target is mounted; a coolant path formed within the mounting table along the mounting surface of the mounting table; and an inlet path connected to the coolant path from a backside of the mounting surface of the mounting table and configured to introduce a coolant into the coolant path. The inlet path is extended from the backside of the mounting surface of the mounting table such that an extension direction of the inlet path is inclined at an angle greater than 90° with respect to a flow direction of the coolant flowing through the coolant path, and then, connected to the coolant path.

Abstract: Embodiments disclosed herein describe a liner assembly including a plurality of individually separated gas passages. The liner assembly provides control of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to the present embodiments.

Abstract: A clamp assembly is for clamping an outer peripheral portion of a substrate to a support in a plasma processing chamber. An RF bias power is applied to the support during the plasma processing of the substrate. The clamp assembly includes an outer clamp member, and an inner clamp member which is received by the outer clamp member, the inner clamp member defining an aperture which exposes the substrate to the plasma processing. The outer clamp member has an inner portion terminating in an inner edge, wherein the inner portion is spaced apart from the inner clamp member.

Abstract: Aspects of the present disclosure generally relate to methods and apparatuses for adjusting an edge ring position, and for removing or replacing one or more components of a process kit of a process chamber. The process kit includes one or more of an edge ring, a support ring, a sliding ring, and other consumable or degradable components.

Abstract: An electrostatic chuck includes, a chuck function portion including a plurality of chuck regions on which an attractable object is placed respectively, and a concave surface portion provided in an outer region of the chuck regions, and electrodes arranged in an inner part of the chuck function portion corresponding to the chuck regions and an inner part of the chuck function portion corresponding to the concave surface portion, respectively.

Abstract: An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

Abstract: A mask plate, a mask plate assembly including the mask plate, a method for manufacturing the mask plate and a method for manufacturing the mask plate assembly are provided according to the present disclosure. The mask plate is used in evaporating to the display substrate, and includes a plurality of grooves arranged in an array form and on a surface of the mask plate. An opening is arranged in the middle of each of the grooves, and the opening corresponds to a display region of a display substrate.

Abstract: A substrate processing apparatus includes a processing container; a placement table; a plurality of pins provided on the placement table configured to perform delivery of the substrate; a plurality of drivers configured to vertically drive the plurality of pins, respectively; a plurality of measuring devices each including an encoder configured to measure height positions of the plurality of pins, respectively. The substrate processing apparatus also includes a controller configured to: measure the height positions of the plurality of pins; select a reference pin; estimate a reference height position; calculate an adjustment speed for making the height positions of the pins other than the reference pin match with the estimated reference height position; and control the drivers, which drive the other pins, to adjust driving speeds of the other pins to an adjustment speed.

Abstract: A temperature adjustment device includes a pedestal to receive a substrate thereon, a first temperature control unit to set a first medium at a first temperature, and a second temperature control unit to set a second medium at a second temperature that is higher than the first temperature. A pedestal flow passage is provided inside the pedestal to allow the first medium and the second medium to flow therethrough by switching between the first medium and the second medium. A first flow passage through which the first medium flowing from the pedestal flow passage is allowed to flow is provided. A second flow passage through which the second medium flowing from the pedestal flow passage is allowed to flow is provided. A heat pump is connected to the first flow passage and the second flow passage to transfer heat between the first medium and the second medium.

Abstract: A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [?m]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer: (?0.5N+40)?H?53;5?N?100.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.