Abstract: A memory controller includes a mapping data controller configured to generate extended mapping data including mapping information and an additional field in response to an extended mapping data request received from a host and to generate data generation information indicating that the extended mapping data has been generated, wherein the mapping information indicates a mapping relationship between a logical block address and a physical block address and a bitmap information generator configured to receive the data generation information and generate bitmap information. The bitmap information may include information for changing a bit value corresponding to a mapping data group including the extended mapping data, among bit values included in a bitmap, to indicate the extended mapping data, and the mapping data group may include a plurality of pieces of mapping data.

Abstract: An integrated circuit (IC) includes a plurality of dies. The IC includes a plurality of memory channel interfaces configured to communicate with a memory, wherein the plurality of memory channel interfaces are disposed within a first die of the plurality of dies. The IC may include a compute array distributed across the plurality of dies and a plurality of remote buffers distributed across the plurality of dies. The plurality of remote buffers are coupled to the plurality of memory channels and to the compute array. The IC further includes a controller configured to determine that each of the plurality of remote buffers has data stored therein and, in response, broadcast a read enable signal to each of the plurality of remote buffers initiating data transfers from the plurality of remote buffers to the compute array across the plurality of dies.

Abstract: A semiconductor device includes an internal clock generation circuit configured to generate first to fourth internal clocks from first and third divided clocks and a ground voltage in first and second modes. The semiconductor device also includes a data processing circuit configured to latch first to fourth internal data according to first to fourth input control signals. The data processing circuit is additionally configured to generate first to fourth output data by determining the output priority of the latched first and third internal data and the latched second and fourth internal data according to the first to fourth internal clocks, first to fourth rising output control signals, and first to fourth falling output control signals.

Abstract: A memory array comprising strings of memory cells comprises a conductor tier comprising conductor material. The memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above the conductor tier. Conducting material of a lowest of the conductive tiers is directly against the conductor material of the conductor tier. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The conducting material in the lowest conductive tier is directly against the channel material of individual of the channel-material strings. Conductive material is of different composition from that of the conducting material above and directly against the conducting material. Other embodiments, including method, are disclosed.

Abstract: A sense circuit of a memory cell includes a first switch, a sense node, a third switch, a connection node, a fourth switch, and a memory cell coupled in series. A boost driver is coupled to the sense node. A second switch and the connection node are coupled in series. The boost driver outputs a first voltage when the first, second, third, fourth switches are turned on. The third switch is then turned off and the boost driver outputs a second voltage higher than the first voltage such that the voltage level at the sense node is not higher than a system voltage. The third switch is turned on, then turned off and the boost driver outputs an intermediate voltage between the first voltage and the second voltage. A state of the memory cell is determined during output of the intermediate voltage.

Abstract: A non-volatile storage device includes a non-volatile storage circuit including a plurality of fuse sets suitable for sequentially outputting fuse data according to a counting address, each fuse set including an enable fuse, a plurality of address fuses, and a duplication fuse; a read control circuit suitable for receiving the fuse data, and outputting latch data by selectively masking data of the enable fuse and the address fuses using data of the duplication fuse within the received fuse data; and a program control circuit suitable for controlling programming the duplication fuse of a duplicated fuse set among the fuse sets when a repair address inputted from outside is identical to data of the address fuses within the duplicated fuse set, or to program the repair address into an available fuse set among the fuse sets, according to a program mode signal.

Abstract: Various implementations described herein are directed to a device having various circuitry for reading first data from a memory location in single-port memory and writing second data to the memory location in the single-port memory after reading the first data from the memory location. In some implementations, reading the first data and writing the second data to the memory location are performed in a single operation.

Abstract: Provided is a method including acquiring reading and writing information of logical chunks of a storage apparatus in a number of historical periods before a current time, and predicting reading and writing information of the logical chunks in a next period according to reading and writing information of the logical chunks in a number of historical periods before the current time and a data prediction model. The data prediction model indicates a relationship between reading and writing information of the logical chunks in a next period and reading and writing information of the logical chunks in a number of historical periods before the current time.

Abstract: A memory array includes wordlines, local bitlines, two-terminal memory elements, global bitlines, and local-to-global bitline pass gates and gain stages. The memory elements are formed between the wordlines and local bitlines. Each local bitline is selectively coupled to an associated global bitline, by way of an associated local-to-global bitline pass gate. During a read operation when a memory element of a local bitline is selected to be read, a local-to-global gain stage is configured to amplify a signal on or passing through the local bitline to an amplified signal on or along an associated global bitline. The amplified signal, which in one embodiment is dependent on the resistive state of the selected memory element, is used to rapidly determine the memory state stored by the selected memory element. The global bit line and/or the selected local bit line can be biased to compensate for the Process Voltage Temperature (PVT) variation.

Abstract: A memory system is provided with technology for performing temperature dependent impedance mitigation, in addition to or instead of other techniques to compensate for differences in impedance. For example, the memory system comprises a plurality of non-volatile memory cells, a first pathway connected to the plurality of non-volatile memory cells, a second pathway connected to the plurality of non-volatile memory cells, and a control circuit connected to the first pathway and the second pathway. The control circuit is configured to compensate based on temperature for a temperature dependent impedance mismatch between the first pathway and the second pathway during a memory operation on the plurality of non-volatile memory cells.

Abstract: An apparatus may include a refresh control circuit with multiple timing circuits. The timing circuits may be used to control steal rates, e.g., the rate of refresh time slots dedicated to healing victim word lines of row hammers. The timing circuits may be controlled to allow independent adjustment of the steal rates for different victim word lines. Thus, different victim word lines may be refreshed at different rates and the different rates may be independent of one another.

Abstract: A storage device may include a controller and a memory array including a plurality of dies arranged into a plurality of channels. In some examples, the controller may be configured to define, from the memory array, a plurality of die-sets based on respective chip enable lines associated with the plurality of dies, wherein each die-set of the plurality of die-sets includes at least one die from each of the plurality of channels; define, from a selected die-set of the plurality of die-sets, a plurality of blocksets, wherein each blockset includes a block from each die of the selected die-set; receive a unit of data to be stored; and issue commands that cause the unit of data to be stored in blocks of a selected blockset of the plurality of blocksets.

Abstract: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement circuits configured to compensate for parameter variations in layers of memory by adjusting access signals during memory operations. In some embodiments, memory cells are based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes multiple layers of memory, a layer including sub-layers of semiconductor material. The integrated circuit also includes an access signal generator configured to generate an access signal to facilitate an access operation, and a characteristic adjuster configured to adjust the access signal for each layer in the multiple layers of memory.

Abstract: A semiconductor memory device includes: first wirings; second wirings intersecting the first wirings; and memory cells. Each of the memory cells is respectively formed between one of the first wirings and one of the second wirings. In a set operation, a set pulse is supplied between one of the first wirings and one of the second wirings. In a reset operation, a reset pulse is supplied between one of the first wirings and one of the second wirings. In a first operation, a first pulse is supplied between one of the first wirings and one of the second wirings. the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse.

Abstract: A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.

Abstract: A memory system includes a memory device configured to store data through a write operation and output the stored data as read data through a read operation; a buffer memory configured to store the read data output from the memory device; a controller configured to control the memory device such that the memory device performs the read operation in response to a read request received from a host, and to control the buffer memory to store the read data in the buffer memory. When the read request corresponds to an asynchronous read operation, the controller may allocate a partial area of the buffer memory as storage space for the read data after the read operation of the memory device is completed.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: In memory devices where a memory cell includes a thin film cell select transistor, selection between layers of such memory cells may further comprise another thin film select transistor. Bitline and wordline encoding suitable for a memory device having a single layer of memory cells may be scaled up to a 3D memory device having two or more memory cell layers. In a DRAM device one layer of (1TFT-1C) cells may include a 2D array of metal-insulator-metal capacitors over an array of TFTs. Additional layers of such 1TFT-1C cells may be stacked monolithically to form a 3D array. Memory cells in each layer may be accessed through a wordline and local bitline. A local bitline of one cell layer may be coupled to global bitline applicable to all cell layers through a layer-selected TFT according to a voltage applied to a layer-select gate voltage.

Abstract: A memory bypass circuit for a memory device comprises: a word line disable circuit; a read and write activation circuit; an internal clock generator; and a write data input circuit. The word line disable circuit is coupled to a word line of the memory device for disabling a write function to the word line. The read and write activation circuit is coupled to the memory device for reading and writing of input data. The internal clock generator is coupled to the word line disable circuit and the read/write activation circuit. The write data input circuit is coupled to a write driver of the memory device for providing write data.

Abstract: A perpendicular spin transfer torque MRAM memory cell includes a magnetic tunnel junction stack comprising a pinned layer having a fixed direction of magnetization, a free layer having a direction of magnetization that can be switched, a tunnel barrier between the pinned layer and the free layer, a cap layer above the free layer and one or more in-stack multi-layer thermal barrier layers having multiple internal interfaces between materials. The thermal barrier layers have high enough thermal resistivity to maintain the heat generated in the memory cell and low enough electrical resistivity to not materially change the electrical resistance of the memory cell. One embodiment further includes a thermal barrier liner surrounding the free layer, pinned layer, tunnel barrier and cap layer.