Abstract: A display device includes a first transistor having a first semiconductor layer, in which a first source region includes a first region in contact with a first source electrode, and a first drain region includes a second region in contact with a first drain electrode. The first source and drain regions, the first region, and the second region each include a first impurity element. In a region close to an interface between the first semiconductor layer and a first insulating layer, a concentration of the first impurity element included in the first and second regions is higher than a concentration of the first impurity element included in the first source region and the first drain region. A method of manufacturing a display device includes forming a first gate electrode and a light shielding layer on a first insulating layer, and forming a second semiconductor layer on the light shielding layer.

Abstract: A display substrate, a method of forming a display substrate and a display device are provided. The display substrate includes: a plurality of pixel units arranged in an array, a substrate, a light-emitting device layer and an electrochromic functional layer, where the light-emitting device layer and the electrochromic functional layer are stacked on the substrate; the light-emitting device layer includes a plurality of light-emitting devices, an orthographic projection of the electrochromic functional device on the substrate is at least partially overlapped with an orthographic projection of the corresponding effective light-emitting area on the substrate.

Abstract: An organic EL device is constructed with a structure that can prevent deterioration in characteristics. An organic EL device is provided that includes at least two or more subpixels each including an organic compound layer including at least a light-emitting layer that emits light of a different color from the other light-emitting layer(s), the organic compound layer being interposed between a first electrode and a second electrode in a stacking manner, the subpixels being disposed separately from one another on a plane perpendicular to a direction of the stacking. Lateral surfaces of the organic compound layers are covered with films differing from subpixel to subpixel. This structure can prevent the organic EL device from deterioration in characteristics.

Abstract: A display apparatus includes: a substrate; a source electrode, a drain electrode, and first electrodes disposed on the substrate and spaced apart from each other; a first layer covering the source electrode, the drain electrode, and the first electrodes; a semiconductor layer disposed on the first layer; a source connection electrode contacting the source electrode through a first hole in the first layer to electrically connect the source electrode and the semiconductor layer to each other; a drain connection electrode contacting the drain electrode through a second hole in the first layer to electrically connect the drain electrode and the semiconductor layer to each other; and a pixel electrode disposed above the first layer and overlapping the first electrodes including first projections overlapping the first electrodes and first recesses between the first projections.

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

Abstract: A display apparatus includes a substrate including a display area and a peripheral area; a thin-film transistor disposed on the substrate and including a semiconductor layer; a conductive layer disposed between the substrate and the semiconductor layer and including a pad electrode disposed in the peripheral area; a first insulating layer disposed between the conductive layer and the semiconductor layer and including a first opening exposing at least a part of an upper surface of the pad electrode; and a second insulating layer disposed on the thin-film transistor and including a second opening coinciding with the first opening, wherein an opening area of the second opening of the second insulating layer is greater than an opening area of the first opening of the first insulating layer.

Abstract: A display device includes a via layer disposed on a substrate and including a via groove having a shape recessed from a first surface to a second surface of the via layer. A first electrode is disposed on the first surface. A pixel-defining film is disposed on the via layer and the first electrode. A first pixel-defining film through-hole passes through the pixel-defining film in a thickness direction and exposes the first electrode. A second pixel-defining film through-hole passes through the pixel-defining film in the thickness direction. The second pixel-defining film through-hole is spaced apart from the first pixel-defining film through-hole and overlaps the via groove. An emission layer is disposed on an exposed portion of the first electrode. A protrusion is disposed on the pixel-defining film and includes a protrusion through-hole which passes through the protrusion in the thickness direction and overlaps the second pixel-defining film through-hole.

Abstract: A display device includes a substrate, a plurality of first electrodes disposed on the substrate, a pixel defining layer disposed on the substrate, and defining a plurality of opening areas by exposing a portion of an upper surface of each of the plurality of first electrodes, a spacer disposed on the pixel defining layer and disposed between two adjacent opening areas among the plurality of opening areas, a groove extending into the spacer, a first common layer covering the plurality of first electrodes, the pixel defining layer, and the spacer, a plurality of light emitting layers disposed on the first common layer to overlap each of the plurality of opening areas, and a second electrode covering the plurality of light emitting layers and the first common layer. The groove at least partially overlaps with an imaginary straight line connecting two points located at the shortest distance between adjacent opening areas.

Abstract: Provided are a light-emitting device and a manufacturing method thereof, a display panel and a display device. The light-emitting device includes a plurality of light-emitting units including a first, a second, and a third light-emitting unit. Each light-emitting unit includes a micro-cavity structure including an anode, a hole transport layer, a functional layer, and a cathode. The functional layer of the first light-emitting unit includes a first light-emitting layer, a first buffer layer between the first light-emitting layer and the hole transport layer of the first light-emitting unit, and a second buffer layer between the first buffer layer and the first light-emitting layer. The material of the second buffer layer is different from that of the first buffer layer, the second buffer layer has a physical thickness less than or equal to 30 nanometers and an optical thickness less than or equal to 60 nanometers.

Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.

Abstract: The present disclosure provides a cutting method of a display module, including: providing a display module to be cut, the display module to be cut including a display panel and a spacing layer on the display panel, and the display panel including a region to be cut, the spacing layer being provided with a first through hole exposing the region to be cut, and the first through hole being provided therein with an encapsulation adhesive; and performing laser cutting on the display module to be cut at a position of the region to be cut so as to remove the region to be cut to form a cutting groove. In the laser cutting, at least part of the encapsulation adhesive is melted and covers a sidewall of the cutting groove.

Abstract: An electronic device according to an embodiment of the inventive concept includes a display panel in which a first display area and a second display area having a higher transmittance than the first display area are defined, an electronic module disposed below the second display area of the display panel, a circuit board which is connected to the display panel and on which the electronic module is mounted, and an intermediate layer disposed between the electronic module and the display panel, and the electronic module and the circuit board do not overlap each other when viewed in a plane, so that the electronic device may be made thinner, and performance of the electronic module included in the electronic device may be improved.

Abstract: Provided is a display substrate. The display substrate includes a base substrate, a patterned film disposed on a side of the base substrate, and a planarization film disposed on a side, distal from the base substrate, of the patterned film, wherein a surface, distal from the base substrate, of the patterned film has a depressed portion and a non-depressed portion. A thickness of the depressed portion is less than a thickness of the non-depressed portion, and lyophilicity of the depressed portion is higher than the lyophilicity of the non-depressed portion.

Abstract: An embodiment of the present disclosure provides a display panel, comprising a display substrate and a packaging cover plate that are oppositely arranged to form a cell, in which the packaging cover plate comprises a cover plate substrate, an air cushion layer formed on the cover plate substrate, and an packaging layer covering the air cushion layer and having a first concave structure, the display substrate comprises a base substrate and a display component formed on the base substrate and embedded in the first concave structure.

Abstract: An embodiment of the present disclosure provides a thin film transistor, a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer on a substrate, a gate electrode disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer between the active layer and the gate electrode. The gate insulation layer can cover an entire top surface of the active layer facing the gate electrode. The active layer can include a channel part overlapping the gate electrode, a conductivity-providing part which does not overlap the gate electrode, and an offset part between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part can be doped with a dopant.

Abstract: A flat panel detector substrate includes a base substrate, a photoelectric conversion layer, a bias signal line, and a conductive structure. The photoelectric conversion layer is located on the base substrate. The photoelectric conversion layer has a first surface proximate to the base substrate and a second surface away from the base substrate. The bias signal line is located between the photoelectric conversion layer and the base substrate. The conductive structure is located on the base substrate. One end of the conductive structure is coupled to the second surface of the photoelectric conversion layer, another end of the conductive structure is coupled to the bias signal line, and a portion therebetween is located beside the photoelectric conversion layer.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.

Abstract: A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).

Abstract: A display device may include a substrate, a plurality of light emitting elements disposed on the substrate, an encapsulation substrate disposed on the light emitting elements and a polarizing layer disposed between the light emitting elements and the encapsulation substrate and including a polarization area and a non-polarization area.