Patents Examined by Vu A Vu
  • Patent number: 11664440
    Abstract: An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: May 30, 2023
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Xiaolong Ma, Riqing Zhang, Stephane Badel
  • Patent number: 11658126
    Abstract: In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: May 23, 2023
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Jin Young Khim, Won Chul Do, Sang Hyoun Lee, Ji Hun Yi, Ji Yeon Ryu
  • Patent number: 11658454
    Abstract: A system and method for tuning and infrared source laser in the Mid-IR wavelength range. The system and method comprising, at least, a plurality of individually tunable emitters, each emitter emitting a beam having a unique wavelength, a grating, a mirror positioned after the grating to receive at least one refracted order of light of at least one beam and to redirect the beam back towards the grating, and a micro-electro-mechanical systems device containing a plurality of adjustable micro-mirrors.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: May 23, 2023
    Assignee: Panasonic Connect North America, Division of Panasonic Corporation of North America
    Inventors: Bien Chann, Robin Huang, Parviz Tayebati
  • Patent number: 11649978
    Abstract: A Thermal Performance Forecast approach is described that can be used to forecast heating and cooling fuel consumption based on changes to user preferences and building-specific parameters that include indoor temperature, building insulation, HVAC system efficiency, and internal gains. A simplified version of the Thermal Performance Forecast approach, called the Approximated Thermal Performance Forecast, provides a single equation that accepts two fundamental input parameters and four ratios that express the relationship between the existing and post-change variables for the building properties to estimate future fuel consumption. The Approximated Thermal Performance Forecast approach marginally sacrifices accuracy for a simplified forecast.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: May 16, 2023
    Assignee: CLEAN POWER RESEARCH, L.L.C.
    Inventor: Thomas E. Hoff
  • Patent number: 11652082
    Abstract: A micro-transfer printing system comprises a source substrate having a substrate surface and components disposed in an array on, over, or in the substrate surface Each component has a component extent in a plane parallel to the substrate surface. A stamp comprises a stamp body and stamp posts extending away from the stamp body disposed in an array over the stamp body. Each of the stamp posts has (i) a post location corresponding to a component location of one of the components when the stamp is disposed in alignment with the source substrate, and (ii) a post surface extent on a distal end of the stamp post. The post surface extent is greater than the component extent.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: May 16, 2023
    Assignee: X Display Company Technology Limited
    Inventor: Ronald S. Cok
  • Patent number: 11652061
    Abstract: Embodiments may relate to a microelectronic package that includes a die and a backside metallization (BSM) layer positioned on the face of the die. The BSM layer may include a feature that indicates that the BSM layer was formed on the face of the die by a masked deposition technique. Other embodiments may be described or claimed.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: May 16, 2023
    Assignee: Intel Corporation
    Inventors: Shenavia S. Howell, John J. Beatty, Raymond A. Krick, Suzana Prstic
  • Patent number: 11646289
    Abstract: The present disclosure relates to a radio frequency (RF) device and a process for making the same. According to the process, a precursor wafer, which includes device regions, individual interfacial layers, individual p-type doped layers, and a silicon handle substrate, is firstly provided. Each individual interfacial layer is over an active layer of a corresponding device region, each individual p-type doped layer is over a corresponding individual interfacial layer, and the silicon handle substrate is over each individual p-type doped layer. Herein, each individual interfacial layer is formed of SiGe, and each individual p-type doped layer is a silicon layer doped with a p-type material that has a doped concentration greater than 1E18cm-3. Next, the silicon handle substrate is completely removed to provide an etched wafer, and each individual p-type doped layer is completely removed from the etched wafer.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: May 9, 2023
    Assignee: Qorvo US, Inc.
    Inventors: Julio C. Costa, Mickael Renault
  • Patent number: 11646230
    Abstract: A chip singulation method includes, in stated order: forming a surface supporting layer on an upper surface of a wafer; thinning the wafer from the undersurface to reduce the thickness to at most 30 ?m; removing the surface supporting layer from the upper surface; forming a first metal layer and subsequently a second metal layer on the undersurface of the wafer; applying a dicing tape onto an undersurface of the second metal layer; applying, onto the upper surface of the wafer, a process of increasing hydrophilicity of a surface of the wafer; forming a water-soluble protective layer on the surface of the wafer; cutting the wafer, the first metal layer, and the second metal layer by irradiating a predetermined region of the upper surface of the wafer with a laser beam; and removing the water-soluble protective layer from the surface of the wafer using wash water.
    Type: Grant
    Filed: September 22, 2022
    Date of Patent: May 9, 2023
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Takeshi Harada, Hiroaki Ohta, Yoshihiro Matsushima
  • Patent number: 11639339
    Abstract: The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to electronic devices which comprise these compounds.
    Type: Grant
    Filed: November 22, 2018
    Date of Patent: May 2, 2023
    Assignee: Merck Patent GmbH
    Inventors: Nils Koenen, Rouven Linge, Sebastian Meyer, Holger Heil
  • Patent number: 11640913
    Abstract: A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: May 2, 2023
    Assignee: ULTRA DISPLAY TECHNOLOGY CORP.
    Inventor: Hsien-Te Chen
  • Patent number: 11637030
    Abstract: A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: April 25, 2023
    Assignee: KLA Corporation
    Inventors: Yoram Uziel, Ulrich Pohlmann, Frank Laske, Nadav Gutman, Ariel Hildesheim, Aviv Balan
  • Patent number: 11626303
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: April 11, 2023
    Assignee: Applied Materials, Inc.
    Inventor: Viren Kalsekar
  • Patent number: 11621201
    Abstract: A laser beam spot shape correcting method includes a laser beam irradiating step of irradiating a concave mirror with a laser beam, an imaging step of imaging reflected light by a beam profiler, an image forming step of forming an XZ plane image or a YZ plane image from an XY plane image imaged in the imaging step, and a comparing step of comparing the image formed in the image forming step with an XZ plane image or a YZ plane image of an ideal laser beam. A phase pattern displayed on a display unit of a spatial light modulator is changed such that the XZ plane image or the YZ plane image formed in the image forming step coincides with the XZ plane image or the YZ plane image of the ideal laser beam.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: April 4, 2023
    Assignee: DISCO CORPORATION
    Inventors: Atsushi Ueki, Teppei Nomura
  • Patent number: 11621193
    Abstract: A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: April 4, 2023
    Assignee: SOCIONEXT INC.
    Inventor: Toyoji Sawada
  • Patent number: 11621242
    Abstract: The present disclosure relates to a radio frequency (RF) device and a process for making the same. According to the process, a precursor wafer, which includes device regions, individual interfacial layers, individual p-type doped layers, and a silicon handle substrate, is firstly provided. Each individual interfacial layer is over an active layer of a corresponding device region, each individual p-type doped layer is over a corresponding individual interfacial layer, and the silicon handle substrate is over each individual p-type doped layer. Herein, each individual interfacial layer is formed of SiGe, and each individual p-type doped layer is a silicon layer doped with a p-type material that has a doped concentration greater than 1E18cm-3. Next, the silicon handle substrate is completely removed to provide an etched wafer, and each individual p-type doped layer is completely removed from the etched wafer.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: April 4, 2023
    Assignee: Qorvo US, Inc.
    Inventors: Julio C. Costa, Mickael Renault
  • Patent number: 11616042
    Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: March 28, 2023
    Assignee: Kulicke and Soffa Industries, Inc.
    Inventors: Adeel Ahmad Bajwa, Thomas J. Colosimo, Jr.
  • Patent number: 11615978
    Abstract: The present invention is a method for controlling flatness of a wafer including the steps of: providing a holding member having a holding surface including a plurality of segments, where each of the plurality of segments includes a dry adhesive fiber structure; making the holding surface of the holding member adhere to a wafer to make the holding member hold the wafer; obtaining information on flatness of the wafer by measuring flatness of the wafer to; and releasing adhesion of the dry adhesive fiber structures to the wafer in a part of the plurality of segments of the holding surface of the holding member based on the information on flatness. This can provide: a method for controlling flatness by which flatness of a wafer can be controlled sufficiently.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: March 28, 2023
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Tsutomu Ogihara
  • Patent number: 11616030
    Abstract: A method for making a three-dimensional (3-D) module includes the steps of: A) forming a laminate of alternate ceramic tape layers and internal electrode layers on a substrate; B) etching said laminate to form first and second capacitor stacks at said first and second locations; C) firing said first and second capacitor stacks integrally; D) forming first and second pairs of external electrodes on said first and second capacitor stacks, respectively.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: March 28, 2023
    Assignee: Southern University of Science and Technology
    Inventors: Guobiao Zhang, Hongyu Yu, Shengming Zhou, Yuejin Guo, Kai Chen, Yida Li, Jun Lan
  • Patent number: 11616038
    Abstract: A semiconductor die includes a substrate and an integrated circuit provided on the substrate and having contacts. An electrically conductive layer is provided on the integrated circuit and defines electrically conductive elements electrically connected to the contacts. Electrically conductive interconnects coupled with respective electrically conductive elements. The electrically conductive interconnects have at least one of different sizes or shapes from one another.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: March 28, 2023
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Patrick Francis Thompson, Christopher Daniel Manack, Stefan Herzer, Rakshit Agrawal
  • Patent number: 11610795
    Abstract: Purge diffusers for use in systems for transporting substrates include: i) a purge diffuser core having an internal purge gas channel, one or more diffuser ports and an outer surface; ii) filter media secured to the outer surface of the purge diffuser core; and iii) a purge port connector for mounting the purge diffuser to a purge port of a substrate container for transporting substrates. The purge diffuser core may be a unitary article, may be formed by injection molding, and may include diverters internal to the internal purge gas channel.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: March 21, 2023
    Assignee: ENTEGRIS, INC.
    Inventors: Mark V. Smith, Nicholas Thelen, Matthew A. Fuller, Michael C. Zabka, Sung In Moon, John P. Puglia