Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Abstract: An object of the present invention is to provide a technique suitable for achieving low wiring resistance and reducing a variation in the resistance value between semiconductor elements to be multilayered in a method of manufacturing a semiconductor device in which the semiconductor elements are multilayered through laminating semiconductor wafers via an adhesive layer. The method of the present invention includes first to third processes. In the first process, a wafer laminate Y is prepared, the wafer laminate Y having a laminated structure including a wafer 3, wafers 1T with a thickness from 1 to 20 um, and an adhesive layer 4 with a thickness from 0.5 to 4.5 ?m interposed between a main surface 3a of the wafer 3 and a back surface 1b of the wafer 1T. In the second process, holes extending from the main surface 1a of the wafer 1T and reaching a wiring pattern of the wafer 3 are formed by a predetermined etching treatment.

Abstract: A reflection filter device includes: a ring resonator filter including a ring-shaped waveguide and two arms, each of the two arms being optically coupled to the ring-shaped waveguide; and a dual-branch portion including a light input/output port and two branch ports, the light input/output port being configured to allow input and output of light, the two branch ports being configured to allow output of the light input from the light input/output port, the light being split into two, the two arms being connected to the two branch ports, respectively, at least one of the two arms being equipped with a phase adjuster.

Abstract: The present invention provides a method for an improved protective coating for plasma dicing a substrate. A work piece having a support film, a frame and the substrate, the substrate having a top surface and a bottom surface, the top surface of the substrate having a plurality of device structures and a plurality of street areas is provided. The work piece is formed by adhering the substrate to a support film and then mounting the substrate with the support film to a frame. A composite material coating having a matrix component and a filler component is applied to the top surface of the substrate. The filler component has a plurality of particles. The composite material coating is removed from at least one street area to expose the street area. The exposed street area is plasma etched. The composite material coating is removed from the top surface of the substrate.

Abstract: A waveguide based wavelength-tunable laser formed on a semiconductor substrate includes a first reflector from which laser light is output, a second reflector configuring a laser resonator together with the first reflector, a gain portion that is provided between the first reflector and the second reflector, at least two wavelength filters that can adjust wavelength characteristics and adjust a wavelength of the laser light, and a phase adjuster that adjusts an optical path length in the laser resonator, and a waveguide is formed to fold back an optical path by an angle of substantially 180 degrees between the first reflector and the second reflector.

Abstract: The present application discloses a method, a system, a device, and a storage medium for fabricating a GaN chip. The method includes: growing a Nb2N sacrificial layer on an original substrate, and growing a GaN insertion layer on the Nb2N sacrificial layer; growing a Ta2N sacrificial layer on the GaN insertion layer, and growing a semiconductor layer on the Ta2N sacrificial layer to form a GaN wafer; bonding the GaN wafer with a first surface of a temporary carrier, and removing the Nb2N sacrificial layer and the Ta2N sacrificial layer; and transferring remaining material after removal of the Nb2N sacrificial layer and the Ta2N sacrificial layer to a target substrate, and removing the temporary carrier from the remaining material to form the GaN chip.

Abstract: Handler wafers and methods of handling a wafer include positioning a handler, which is attached to a wafer by a bonding layer that comprises a debonding layer, an optical enhancement layer, and an anti-reflection layer. The handler is debonded from the wafer using a laser that emits laser energy at a wavelength that is absorbed by the debonding layer and that is confined to the debonding layer by the optical enhancement layer, such that the material of the debonding layer ablates when exposed to the laser energy to release the wafer.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

Abstract: Purge diffusers for use in systems for transporting substrates include: i) a purge diffuser core having an internal purge gas channel, one or more diffuser ports and an outer surface; ii) filter media secured to the outer surface of the purge diffuser core; and iii) a purge port connector for mounting the purge diffuser to a purge port of a substrate container for transporting substrates. The purge diffuser core may be a unitary article, may be formed by injection molding, and may include diverters internal to the internal purge gas channel.

Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.

Abstract: To prevent the surface of a base substrate and the bottom surface of a separated semiconductor epitaxial layer from being bonded to each other even after a removal layer is removed, the semiconductor substrate includes a base substrate, a first removal layer provided on the base substrate, a second removal layer provided above the first removal layer, and a semiconductor epitaxial layer provided above the second removal layer, and an etching rate of the second removal layer for a predetermined etching material is larger than the etching rate of the first removal layer for the predetermined etching material.

Abstract: The present invention provides a SiP structure and method for a light emitting diode (LED) chip. The packaging structure includes: a heat sink structure, a first chip, a first packaging layer, a second packaging layer, a rewiring layer, an LED chip, a printed circuit board (PCB), and a third packaging layer. In the present invention, chips with a plurality of functions, including the first chip, the LED chip, and the like, are integrated into one packaging structure through fan-out system-level packaging, to meet a plurality of different system functional requirements and improve the performance of the packaging system. By the rewiring layer, a metal connecting pillar, a metal lead wire, and the like, the first chip, the LED chip, and the PCB are electrically connected, to achieve a three-dimensional vertically stacked package thereby effectively reducing the area of a SiP and improving the integration of the packaging system.

Abstract: An H-bridge integrated laser driver optimizes power dissipation, impedance matching, low-swing and high-swing reliability for electro-absorption modulated laser (EML) and directly modulated laser diode (DML) applications. The laser driver includes a retimer for converting low-speed parallel data to a high-speed serial bit stream and to an inverted representation of the high-speed parallel bit stream, an M-bit PMOS DAC configured to receive a first buffered bit stream, an N-bit NMOS DAC configured to receive a second buffered bit stream substantially synchronized with the first buffered bit stream. A protective device is coupled between the M-bit DAC and the N-bit DAC.

Abstract: A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies.

Abstract: The present invention relates to a device for selective separating electronic components from a frame with electronic components including at least two press parts; drive means for moving the press parts; a guide for guiding frames between the press parts; a plurality of punches in a first press part and a plurality of openings in a second press part. The invention also provides a system for in-line selective separating electronic components from a frame with electronic components and a method for selective separating electronic components from a frame with electronic components.

Abstract: A laser cleaning method and device for improving uniformity of a laser cleaning surface are provided. The laser cleaning method includes: applying a peaked-top sine wave signal to a motor; controlling a galvanometer to swing in a reciprocated manner by the motor; shaping a laser beam emitted by a laser to a linear beam by the reciprocated swing of the galvanometer; and performing laser cleaning using the shaped linear beam.

Abstract: A laser device for skin treatment includes: a laser generating unit including a diode laser for generating a pulse capable of being varied to a pulse width of 100 picoseconds (ps) to 2000 ps by a dedicated driver having a rising time of 100 ps or less and a pulse width adjustment unit for adjusting a width of the pulse generated by the diode laser, the laser generating unit configured to generate a single or a plurality of pulses; and a laser amplifying unit including a pumping lamp and a single or a plurality of amplification mediums having a rod structure for absorbing light energy from the pumping lamp, wherein, in the laser amplifying unit, a pulse supplied from the laser generating unit passes through at least one of the single or a plurality of amplification mediums a plurality of times inward from the outside and is gradually amplified.

Abstract: Provided is a semiconductor device manufacturing method in which semiconductor elements are formed into multiple layers through the lamination of wafers in which the semiconductor elements are fabricated, the method being suited for efficiently creating multiple layers of thin wafers while suppressing warping of a wafer laminate. The method of the present invention includes a preparation step, a thinning step, a bonding step, a removal step, and a multilayering step. In the preparation step, a reinforced wafer is prepared, the reinforced wafer having a laminated structure that includes: a wafer including an element forming surface and a back surface opposite from the element forming surface; a supporting substrate; and a temporary adhesive layer for forming temporary adhesion, the temporary adhesive layer being provided between the element forming surface side of the wafer and the supporting substrate.

Abstract: In a described example, a method includes: forming a metal layer on a backside surface of a semiconductor wafer, the semiconductor wafer having semiconductor dies spaced apart by scribe lanes on an active surface of the semiconductor wafer opposite the backside surface; forming a layer with a modulus greater than about 4000 MPa up to about 8000 MPa over the metal layer; mounting the backside of the semiconductor wafer on a first side of a dicing tape having an adhesive; cutting through the semiconductor wafer, the metal layer, and the layer with a modulus greater than about 4000 MPa up to about 8000 MPa along scribe lanes; separating the semiconductor dies from the semiconductor wafer and from one another by stretching the dicing tape, expanding the cuts in the semiconductor wafer along the scribe lanes between the semiconductor dies; and removing the separated semiconductor dies from the dicing tape.

Abstract: A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.