Abstract: A multi-layer laser diode mount is configured with a submount made from thermo- and electro-conductive material. One of the opposite surfaces of the submount supports a laser diode. The other surface of the submount faces and is spaced from a heatsink. The submount and heatsink are configured with respective thermal expansion coefficients (“TEC”) which are different from one another. The opposite surfaces of the submount are electroplated with respective metal layers one of which is bonded to a soft solder layer. In one aspect of the disclosure, the mount is further configured with a spacer having the same TEC as that of the submount and bonded to the soft solder layer. A layer of hard solder bonds the spacer and heatsink to one another. In a further aspect of the disclosure, the electroplated metal layer in contact with the other surface of the submount is hundred- or more micron thick. The soft solder is directly bonded to the heatsink.

Abstract: The invention describes a laser device (100) enabling controlled emission of individual laser beams (194). The laser device (100) comprises an optically pumped extended cavity laser with one gain element whereby a multitude of pump lasers (110) are provided in order to generate independent pump beams (191) and thus corresponding laser beams (194). The laser device (100) may be used to enable simplified or improved laser systems (500) as, for example, two or three-dimensional laser printers. The pump laser (110) may be VCSEL and the laser (160) may be a VECSEL monolithically integrated with the pump VCSEL array on the same substrate. Pump mirrors (140) and external cavity mirror (150) may be integrated into a single optical reflector with regions having different curvature. The laser emission is controlled by the pump light, i.e. transversal shape of the laser beam and/or number of laser beams is controlled by switching on/off the individual pump lasers (110).

Abstract: A Pockels cell driver circuit has a first circuit node that can be connected to a first terminal of a Pockels cell and a second circuit node that can be connected to a second terminal of the Pockels cell. The first circuit node is connected via a first switch to a positive potential and the second circuit node is connected via a second switch to a negative potential. The first circuit node is connected to the second circuit node via a short-circuit switch which is controlled for discharge of a linked Pockels cell.

Abstract: A high-power laser system includes a plurality of cascaded diode drivers, a pump source, and a laser element. The diode drivers are configured to generate a continuous driver signal. The pump source is configured to generate radiated energy in response to the continuous driver signal. The laser element is disposed downstream from the pump source and is configured to generate a laser beam in response to stimulation via the radiated energy. The high-power laser system further includes an electronic controller configured to output at least one driver signal that operates the plurality of diode drivers at a fixed frequency. The at least one driver signal operates a first cascade diode driver among the plurality of diode drivers 90 degrees out of phase with respect to a second cascade diode driver among the plurality of diode drivers.

Abstract: A quantum cascade laser includes a laser structure including laser waveguide structures and a first terrace region; first electrodes; pad electrodes; and wiring metal conductors. The laser structure includes first, second and third regions arranged in a direction of a first axis. The third region is disposed between the first and second regions. The first region has a first end facet disposed at a boundary between the first and third regions. The first end facet extends in a direction intersecting with the first axis. The second region has a second end facet disposed at a boundary between the second and third regions. The second region includes the laser structure. The pad electrodes are disposed on the first terrace region. The first electrodes are disposed on the laser waveguide structures. Each of the pad electrodes is connected to one of the first electrodes through one of the wiring metal conductors.

Abstract: A cooler for diode-laser bars comprises a machined base including a water-input plenum and a water-output plenum, and a top plate on which the diode-laser bars can be mounted. A stack of three etched plates is provided between the base and first plate. The stack of etched plates is configured to provide a five longitudinally spaced-apart rows of eight laterally spaced-apart cooling-channels connected to the water-input and water-output plenums. Water flows in the cooling-channels and in thermal contact with the first plate.

Abstract: A semiconductor laser oscillator includes a diode unit configured from a plurality of banks, in which one bank is configured from a plurality of laser diodes connected in series. The diode unit includes a wavelength locking mechanism for locking to a plurality of wavelengths. The semiconductor laser oscillator includes a controller configured to control input currents to the laser diodes of each of the plurality of banks individually in correspondence to a characteristic of a wavelength locking efficiency, and to control an output of the diode unit as a whole to a required output.

Abstract: A burst optical signal transmission device which includes a light source for generating and outputting burst signal light, a light source driving circuit for outputting, to the light source, a driving signal for switching between an output time and a stop time of the burst signal light, based on a burst control signal, and a pre-emphasis circuit for outputting a pre-emphasis control signal for superimposing an additional signal for charging a capacitor included in the light source, onto the driving signal, at a timing in the vicinity of the beginning of the burst control signal.

Abstract: A system for single pass amplification of dissipative soliton-like seed pulses of 1-20 ps to produce output pulses of 50-200 fs, without requiring a stretcher. Such an amplifier relies on the inherent chirp of the seed pulse out of the oscillator instead of pulse stretching.

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

Abstract: An injection-seeded whispering gallery mode optical amplifier. The amplifier includes a micro or nanoscale whispering gallery mode resonator configured to amplify a whispering gallery mode therein via a gain medium separated from the whispering gallery mode resonator but within the evanescent field of the whispering gallery mode resonator. A pump stimulates the whispering gallery mode. A plasmonic surface couples power into the whispering gallery mode resonator.

Abstract: A laser apparatus that can reliably prevent the formation of condensation is disclosed. In the laser apparatus, the temperature of cooling water supplied into the interior of the laser apparatus is controlled within a first predetermined temperature range during laser oscillation, while at the same time, continuously performing dehumidification so that the relation (dew point of air inside laser apparatus)+(first predetermined temperature difference)?(cooling water temperature) is maintained. The dew point of the air inside the laser apparatus can be obtained by a computing unit from the humidity and temperature of the air.

Abstract: An optical module includes: a first thermoelectric cooler (TEC) disposed at least partially inside a laser, a second TEC is disposed on a housing of the laser, and a micro control unit (MCU). The first TEC is configured to perform heating or cooling according to an enabling signal input by a MCU. The second TEC is configured to perform heating or cooling according to an enabling signal input by the MCU. The MCU is configured to determine whether to input an enabling signal or a disabling signal to the first TEC and the second TEC according to a size of operating current input by a drive circuit of a laser chip to the laser chip.

Abstract: A heat removal system for use in optical and optoelectronic devices and subassemblies is provided. The heat removal system lowers the power consumption of one or more active cooling components within the device or subassembly, such as a TEC, which is used to remove heat from heat generating components within the device or subassembly. For any particular application, the heat removal system more efficiently removes the heat from the active cooling component, by using a heat transfer assembly, such as a planar heat pipe type assembly. The heat transfer assembly employs properties like, but not limited to, phase transition change and thermal conductivity to move heat without external power. In some embodiments, the heat transfer assembly can be used to allow the active cooling component, such as a TEC to be removed, leaving the heat transfer assembly to remove the heat from the device or subassembly.

Abstract: A method and system for delivering laser pulses achieves the delivery of high quality laser pulses at the location of an application. The method includes the steps of: generating laser pulses, amplifying the laser pulses, temporally stretching the amplified laser pulses, and propagating the amplified laser pulses through an optical delivery fiber of desired length, wherein the laser pulses are temporally compressed in the optical delivery fiber and wherein the laser pulses undergo nonlinear spectral broadening in the optical delivery fiber.

Abstract: The present invention relates to a first container with an internal space for accommodating a vertical external cavity surface emitting laser device. Said first container hermetically seals said internal space from an external space, wherein said first container has at least one wall with at least one first through-opening. Said at least one first through-opening is adapted for passage of an optical pump beam from the external space into the internal space, and/or for passage of a laser emission beam from the internal space into the external space. Moreover, said at least one first through-opening is hermetically sealed by a sealing mirror, wherein said sealing mirror is adapted to form an external cavity of the vertical external cavity surface emitting laser device with a second mirror in the internal space. Furthermore, the present invention relates to laser device with such a first container and to an assembly method of the laser device.

Abstract: There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: “absolute value of theta3 is equal to or greater than 0 degree and smaller than absolute value of theta2”.

Abstract: A tunable laser including: a reflecting mirror; a partially transmitting mirror; a gain medium energized by a pump source; a pair of mirrors surrounding the gain medium, a first prism and a second prism located between the gain medium and the reflecting mirror; the first prism receives radiation from the gain medium and disperses the radiation to the second prism; the second prism receives and directs the radiation towards an optical element which filters the spatially dispersed radiation based on the position to the second prism, the radiation resonates between the reflecting mirror and the partially transmitting mirror; the second prism is placed on a stage moved by a linear motor such that a desired center wavelength is obtained by moving the second prism to a position so as to allow radiation having the desired center wavelength to resonate between the reflecting mirror and the partially transmitting mirror.

Abstract: A laser driver for a laser, which includes an adjustable DC-DC power source, an optical power control loop, and a power source voltage regulator. The adjustable DC-DC power source is coupled to the optical power control loop and the power source voltage regulator, in order to provide a working current for the laser. The optical power control loop is configured to adjust the output optical power of the laser to a set value for optical power by adjusting a working voltage of the laser, and to generate a power source voltage state indicator voltage. The power source voltage regulator is used to generate the power source setting voltage, so that the power source voltage state indicator voltage is greater than or equal to a first preset threshold, or less than or equal to a second preset threshold.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.